AH312-S8PCB900

AH312 Product Features • 400 – 2300 MHz • +33 dBm P1dB • +51 dBm Output IP3 • 18 dB Gain @ 900 MHz • +5V Single Positive Supply • MTTF > 100 Years The Communications Edge TM Product Information 2 Watt, High Linearity InGaP HBT Amplifier Product Description The AH312 is a high dynamic range driver amplifier in a low-cost surface mount package. The InGaP/GaAs HBT is able to achieve high performance for various narrowbandtuned application circuits with up to +49 dBm OIP3 and +33 dBm of compressed 1dB power. It is housed in a leadfree/green/RoHS-compliant SOIC-8 package. All devices are 100% RF and DC tested. Functional Diagram 1 8 2 7 3 6 4 5 The AH312 is targeted for use as a driver amplifier in • Lead-free/green/RoHS-compliant wireless infrastructure where high linearity and medium power is required. An internal active bias allows the SOIC-8 SMT Pkg. AH312 to maintain high linearity over temperature and operate directly off a single +5V supply. This combination Applications makes the device an excellent candidate for transceiver line cards in current and next generation multi-carrier 3G base • Final stage amplifiers for Repeaters stations. Function Vref Input Output Vbias GND N/C or GND Pin No. 1 3 6, 7 8 Backside Paddle 2, 4, 5 • Mobile Infrastructure Specifications (1) Parameter Operational Bandwidth Test Frequency Gain Input R.L. Output R.L. Output P1dB Output IP3 (2) IS-95A Channel Power @ -45 dBc ACPR, 1960 MHz Typical Performance (4) Units Min MHz MHz dB dB dB dBm dBm dBm dBm dB mA V 700 400 9 2140 10 20 6.8 +33.2 +48 +27.5 +25.3 7.7 800 +5 900 Typ Max 2300 Parameter Frequency S21 – Gain S11 – Input R.L. S22 – Output R.L. Output P1dB Output IP3 IS-95A Channel Power @ -45 dBc ACPR Units MHz dB dB dB dBm dBm dBm dBm dB 8.0 900 18 -18 -11 +33 +49 +27 Typical 1960 11 -19 -6.8 +33.4 +51 +27.5 +25.3 7.3 7.7 +5 V @ 800 mA 2140 10 -20 -6.8 +33.2 +48 +32 +47 wCDMA Channel Power @ -45 dBc ACLR wCDMA Channel Power @ -45 dBc ACLR, 2140 MHz Noise Figure Operating Current Range, Icc (3) Device Voltage, Vcc Noise Figure Device Bias (3) 4. Typical parameters reflect performance in a tuned application circuit at +25° C. 1. Test conditions unless otherwise noted: 25ºC, +5V Vsupply, 2140 MHz, in tuned application circuit. 2. 3OIP measured with two tones at an output power of +17 dBm/tone separated by 1 MHz. The suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule. 3. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. It is expected that the current can increase by an additional 200 mA at P1dB. Pin 1 is used as a reference voltage for the internal biasing circuitry. It is expected that Pin 1 will pull 22mA of current when used with a series bias resistor of R1=15Ω. (ie. total device current typically will be 822 mA.) Absolute Maximum Rating Parameter Operating Case Temperature Storage Temperature RF Input Power (continuous) Device Voltage Device Current Device Power Junction Temperature -40 to +85 °C -65 to +150 °C +28 dBm +8 V 1400 mA 8W +250 °C Rating Ordering Information Part No. AH312-S8G AH312-S8PCB900 AH312-S8PCB1960 AH312-S8PCB2140 Description 2 Watt, High Linearity InGaP HBT Amplifier (lead-free/green/RoHS-compliant SOIC-8 Pkg) 900 MHz Evaluation Board 1960 MHz Evaluation Board 2140 MHz Evaluation Board Operation of this device above any of these parameters may cause permanent damage. Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 1 of 7 March 2006 AH312 40 35 30 25 Gain (dB) 20 15 10 The Communications Edge TM Product Information 2 Watt, High Linearity InGaP HBT Amplifier S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 °C, calibrated to device leads) Typical Device Data S11 1.0 0.8 1.0 2. 0 2. 0 DB(|S[2,1]|) DB(GMax) 0. 4 6 0. 6 0. 0.8 Gain / Maximum Stable Gain S22 Swp Max 3GHz Swp Max 3GHz 0 3. 0 4. 10.0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 .0 -2 -0 .6 -0 .6 0 0.5 -0.8 -0.8 -1.0 Notes: The gain for the unmatched device in 50 ohm system is shown as the trace in black color. For a tuned circuit for a particular frequency, it is expected that actual gain will be higher, up to the maximum stable gain. The maximum stable gain is shown in the dashed red line. The impedance plots are shown from 50 – 3000 MHz, with markers placed at 0.5 – 3.0 GHz in 0.5 GHz increments. S-Parameters (VCC = +5 V, ICC = 800 mA, T = 25 °C, unmatched 50 ohm system, calibrated to device leads) Freq (MHz) S11 (dB) S11 (ang) S21 (dB) S21 (ang) S12 (dB) S12 (ang) S22 (dB) S22 (ang) 50 100 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 -0.86 -0.64 -0.68 -0.76 -0.93 -1.15 -1.50 -2.39 -4.47 -11.96 -8.66 -2.76 -1.21 -0.68 -0.43 -0.32 -0.29 -178.06 178.18 172.85 164.33 155.56 146.04 134.58 121.66 104.01 86.06 -179.11 159.91 142.90 130.93 121.91 114.61 108.16 27.55 22.16 16.13 10.61 7.46 5.78 4.87 4.74 5.33 5.96 4.41 0.53 -3.21 -7.27 -10.41 -13.28 -15.94 113.72 98.81 89.06 77.31 67.94 57.62 46.90 32.96 14.01 -17.55 -56.78 -89.86 -107.99 -123.14 -134.93 -143.22 -149.93 -45.75 -45.46 -42.65 -43.96 -41.17 -41.65 -40.36 -40.22 -38.97 -38.96 -39.35 -43.55 -41.56 -42.46 -39.71 -40.99 -39.65 30.91 12.80 6.09 4.69 6.70 -5.78 -7.84 -16.51 -48.82 -86.32 -144.53 145.94 104.25 73.64 64.28 58.20 48.40 -0.38 -0.38 -0.48 -0.48 -0.61 -0.66 -0.71 -0.80 -0.76 -0.60 -0.52 -0.41 -0.54 -0.68 -0.73 -0.73 -0.79 -1.0 1 1.5 Frequency (GHz) 2 2.5 .0 -2 -10 .4 -0 .4 -0 Swp Min 0.05GHz -130.98 -157.30 -172.51 177.51 173.63 170.49 169.31 168.22 167.91 170.63 167.41 164.50 160.11 157.84 154.66 151.14 147.52 Device S-parameters are available for download off of the website at: http://www.wj.com Application Circuit PC Board Layout Circuit Board Material: .014” Getek, single layer, 1 oz copper, Microstrip line details: width = .026”, spacing = .026” The silk screen markers ‘A’, ‘B’, ‘C’, etc. and ‘1’, ‘2’, ‘3’, etc. are used as placemarkers for the input and output tuning shunt capacitors – C8 and C9. The markers and vias are spaced in .050” increments. Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 2 of 7 March 2006 -3 .0 -3 .0 -5 Swp Min 0.05GHz -4 .0 -5. 0 -4 .0 -5. 0 0 2 -0. 2 -0. -10.0 -10.0 5 0 10.0 0.2 0.4 0.6 0.8 1.0 2.0 3.0 4.0 5.0 0 0.2 5.0 0. 4 0 3. 0 4. 5.0 0.2 10.0 AH312 Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+17 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 2 Watt, High Linearity InGaP HBT Amplifier 900 MHz Application Circuit (AH312-S8PCB900) Typical RF Performance at 25 °C 900 MHz 18 dB -18 dB -11 dB +33 dBm +49 dBm +27 dBm 8.0 dB +5 V 800 mA Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S21 vs. Frequency S11 vs. Frequency S22 vs. Frequency 20 19 S21 (dB) S11 (dB) 18 17 16 +25°C -40°C +85°C 0 -5 -10 -15 -20 -25 -30 840 +25°C -40°C +85°C 0 -5 S22 (dB) -10 -15 +25°C -40°C +85°C 15 840 860 880 900 920 940 860 880 900 920 940 -20 840 860 880 900 920 940 Frequency (MHz) Noise Figure vs. Frequency 10 8 P1dB (dBm) NF (dB) 6 4 2 36 34 Frequency (MHz) P1dB vs. Frequency Circuit boards are optimized at 880 MHz Frequency (MHz) ACPR vs. Channel Power IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 900 MHz -40 ACPR (dBc) -40°C 860 880 32 30 28 -50 -60 -40 C +25 C +85 C -40°C 0 840 860 880 +25°C 900 +85°C 920 940 26 840 +25°C 900 +85°C -70 920 940 22 23 24 25 26 27 28 29 Frequency (MHz) Frequency (MHz) Output Channel Power (dBm) OIP3 vs. Output Power 55 50 45 40 35 freq. = 900 MHz, 901 MHz, +25° C OIP3 vs. Frequency 55 50 45 40 35 840 +25° C, +17 dBm/tone OIP3 vs. Temperature 55 50 45 40 35 -40 freq. = 900 MHz, 901 MHz, +17 dBm/tone OIP3 (dBm) OIP3 (dBm) 860 880 900 Frequency (MHz) 920 940 -15 10 35 Temperature (°C) 60 85 OIP3 (dBm) 12 14 16 18 20 22 Output Power (dBm) 24 26 Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 3 of 7 March 2006 AH312 Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+17 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 2 Watt, High Linearity InGaP HBT Amplifier 1960 MHz Application Circuit (AH312-S8PCB1960) Typical RF Performance at 25 °C 1960 MHz 11 dB -20 dB -6.8 dB +33.4 dBm +51 dBm +27.5 dBm 7.3 dB +5 V 800 mA Channel Power (@-45 dBc ACPR, IS-95 9 channels fwd) Noise Figure Device / Supply Voltage Quiescent Current (1) 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S21 vs. Frequency S11 vs. Frequency S22 vs. Frequency 13 12 S21 (dB) S11 (dB) 11 10 9 +25°C -40°C +85°C 0 -5 -10 -15 -20 -25 -30 1930 +25°C -40°C +85°C 0 -5 S22 (dB) -10 -15 +25°C -40°C +85°C 8 1930 1940 1950 1960 1970 1980 1990 1940 1950 1960 1970 1980 1990 -20 1930 1940 1950 1960 1970 1980 1990 Frequency (MHz) Noise Figure vs. Frequency 10 8 6 4 2 P1dB (dBm) NF (dB) 36 34 32 30 28 Frequency (MHz) P1dB vs. Frequency Circuit boards are optimized at 1960 MHz Frequency (MHz) ACPR vs. Channel Power -35 -45 -55 -65 -40 C -75 1990 IS-95, 9 Ch. Fwd, ±885 kHz offset, 30 kHz Meas BW, 1960 MHz -40°C 0 1930 1940 1950 1960 +25°C 1970 +85°C 1980 1990 26 1930 1940 -40°C 1950 +25°C 1960 1970 +85°C 1980 ACPR (dBc) +25 C 26 27 +85 C 28 29 22 23 24 25 Frequency (MHz) Frequency (MHz) Output Channel Power (dBm) OIP3 vs. Output Power 55 50 45 40 35 freq. = 1960 MHz, 1961 MHz, +25° C OIP3 vs. Frequency 55 50 45 40 35 1930 +25° C, +17 dBm/tone OIP3 vs. Temperature 55 50 45 40 35 -40 freq. = 1960 MHz, 1961 MHz, +17 dBm/tone OIP3 (dBm) OIP3 (dBm) 1940 1950 1960 1970 Frequency (MHz) 1980 1990 -15 10 35 Temperature (°C) 60 85 OIP3 (dBm) 12 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 4 of 7 March 2006 AH312 Frequency S21 – Gain S11 – Input Return Loss S22 – Output Return Loss Output P1dB Output IP3 (+17 dBm / tone, 1 MHz spacing) The Communications Edge TM Product Information 2 Watt, High Linearity InGaP HBT Amplifier 2140 MHz Application Circuit (AH312-S8PCB2140) Typical RF Performance at 25 °C 2140 MHz 10 dB -20 dB -6.8 dB +33.2 dBm +48 dBm +25.3 dBm 7.7 dB +5 V 800 mA wCDMA Channel Power (@-45 dBc ACLR, 3GPP, TM 1+64 DPCH) Noise Figure Device / Supply Voltage Quiescent Current (1) 1. This corresponds to the quiescent current or operating current under small-signal conditions into pins 6, 7, and 8. S21 vs. Frequency S11 vs. Frequency S22 vs. Frequency 12 11 S21 (dB) S11 (dB) 10 9 8 +25°C -40°C +85°C 0 -5 -10 -15 -20 -25 -30 2110 +25°C -40°C +85°C 0 -5 S22 (dB) -10 -15 +25°C -40°C +85°C 7 2110 2120 2130 2140 2150 2160 2170 2120 2130 2140 2150 2160 2170 -20 2110 2120 2130 2140 2150 2160 2170 Frequency (MHz) Noise Figure vs. Frequency 10 8 P1dB (dBm) NF (dB) 6 4 2 36 34 Frequency (MHz) P1dB vs. Frequency Circuit boards are optimized at 2140 MHz Frequency (MHz) ACPR vs. Channel Power -35 -40 ACPR (dBc) -45 -50 -55 3GPP W -CDMA, Test Model 1+64 DPCH, ±5 MHz offset, 2140 MHz 32 30 28 -40°C 0 2110 2120 2130 2140 +25°C 2150 +85°C 2160 2170 26 2110 2120 -40°C 2130 +25°C 2140 2150 +85°C 2160 2170 -40 C -60 22 23 24 25 +25 C 26 +85 C 27 Frequency (MHz) Frequency (MHz) Output Channel Power (dBm) OIP3 vs. Frequency 55 50 45 40 35 2110 +25° C, +17 dBm/tone OIP3 vs. Temperature 55 50 45 40 35 -40 freq. = 2140 MHz, 2141 MHz, +17 dBm/tone OIP3 vs. Output Power 55 50 45 40 35 freq. = 2140 MHz, 2141 MHz, +25° C OIP3 (dBm) OIP3 (dBm) 2120 2130 2140 2150 Frequency (MHz) 2160 2170 -15 10 35 Temperature (°C) 60 85 OIP3 (dBm) 12 14 16 18 Output Power (dBm) 20 22 Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 5 of 7 March 2006 AH312 The Communications Edge TM Product Information 2 Watt, High Linearity InGaP HBT Amplifier Application Note: Reduced Bias Configurations The AH312 can be configured to be operated with lower bias current by varying the bias-adjust resistor – R1. The recommended circuit configurations shown previously in this datasheet have the device operating in Class A operation. Lowering the current has little effect on the gain, OIP3, and P1dB performance of the device, but will slightly lower the ACLR/ACPR performance of the device as shown below. An example of the measured data below represents the AH312 measured and configured for 2.14 GHz applications. It is expected that variation of the bias current for other frequency applications will produce similar performance results. AH312-S8PCB2140 Performance Data R1 (ohms) 15 22 43 62 110 Icq (mA) 800 700 600 500 400 Pdiss (W) 4.0 3.5 3.0 2.5 2.0 P1dB (dBm) +33.3 +33.3 +33.1 +33.0 +32.9 OIP3 (dBm) +51.4 +50.9 +50.9 +50.7 +47.3 2.14GHz Gain vs. Output Power 10.2 55 2.14GHz OIP3 vs. Output Power per Tone 9.8 50 9.4 OIP3 (dBm) Gain (dB) Idq=800mA 'Class A' 9 45 Idq=800mA 'Class A' Idq=700mA Idq=700mA Idq=600mA 8.6 40 Idq=600mA Idq=500mA Idq=500mA Idq=400mA 35 18 20 22 24 26 28 30 32 34 10 8.2 Idq=400mA 12 14 16 18 20 22 24 Output Power (dBm) W-CDMA ACLR vs. Output Channel Power 3GPP W-CDMA, Test Model 1 + 64 DPCH, ±5 MHz offset Power Out per Tone (dBm) CW PAE vs. Output Power 100 -35 Idq=800mA 'Class A' Idq=800mA 'Class A' Idq=700mA Idq=600mA Idq=700mA -40 PAE (%) Idq=600mA ACLR (dBc) -45 -50 -55 -60 -65 14 Idq=500mA Idq=400mA Idq=500mA Idq=400mA 10 1 16 18 20 22 24 26 18 20 22 24 26 28 30 32 W-CDMA Channel Power Out (dBm) CW Tone Power Out (dBm) Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 6 of 7 March 2006 AH312 The Communications Edge TM Product Information 2 Watt, High Linearity InGaP HBT Amplifier AH312-S8G (Lead-Free Package) Mechanical Information This package is lead-free/green/RoHS-compliant. The plating material on the leads is NiPdAu. It is compatible with both lead-free (maximum 260 °C reflow temperature) and lead (maximum 245 °C reflow temperature) soldering processes. Outline Drawing Product Marking The component will be marked with an “AH312G” designator with an alphanumeric lot code on the top surface of the package. The obsoleted tin-lead version will have been marked with an “AH312-S8” or “ECP200G” designator. Tape and reel specifications for this part are located on the website in the “Application Notes” section. ESD / MSL Information ESD Rating: Value: Test: Standard: Class 1B Passes between 500 and 1000V Human Body Model (HBM) JEDEC Standard JESD22-A114 MSL Rating: Level 2 at +260 °C convection reflow Standard: JEDEC Standard J-STD-020 Mounting Config. Notes Mounting Configuration / Land Pattern 1. A heatsink underneath the area of the PCB for the mounted device is strictly required for proper thermal operation. Damage to the device can occur without the use of one. 2. Ground / thermal vias are critical for the proper performance of this device. Vias should use a .35mm (#80 / .0135”) diameter drill and have a final plated thru diameter of .25 mm (.010”). 3. Add as much copper as possible to inner and outer layers near the part to ensure optimal thermal performance. 4. Mounting screws can be added near the part to fasten the board to a heatsink. Ensure that the ground / thermal via region contacts the heatsink. 5. Do not put solder mask on the backside of the PC board in the region where the board contacts the heatsink. 6. RF trace width depends upon the PC board material and construction. 7. Use 1 oz. Copper minimum. 8. All dimensions are in millimeters (inches). Angles are in degrees. Thermal Specifications Parameter Operating Case Temperature (1) Thermal Resistance (2), Rth Junction Temperature (3), Tjc M vs. GND Tab Tem TTF perature 100000 -40 to +85 °C 17.5 °C / W 155 °C Notes: 1. The amplifier can be operated at 105 °C case temperature for up to 1000 hours over its lifetime without degradation in performance and will not degrade device operation at the recommended maximum 85 °C case temperature for the rest of its lifetime. 2. The thermal resistance is referenced from the junction-to-case at a case temperature of 85 °C. Tjc is a function of the voltage at pins 6 and 7 and the current applied to pins 6, 7, and 8 and can be calculated by: Tjc = Tcase + Rth * Vcc * Icc 3. This corresponds to the typical biasing condition of +5V, 800 mA at an 85 °C case temperature. A minimum MTTF of 1 million hours is achieved for junction temperatures below 247 °C. MTTF (million hrs) Rating 10000 1000 100 60 70 80 90 100 110 Tab Tem perature (°C) 120 Specifications and information are subject to change without notice. WJ Communications, Inc • Phone 1-800-WJ1-4401 • FAX: 408-577-6621 • e-mail: sales@wj.com • W eb site: www.wj.com Page 7 of 7 March 2006