HMBTA44

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HN200208 Issued Date : 1993.06.23 Revised Date : 2004.09.08 Page No. : 1/4 HMBTA44 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBTA44 is designed for application requires high voltage. Features • High voltage: VCEO=400V(min) at IC=1mA • High current: IC=300mA at 25°C • Complementary with HMBTA94 SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature ........................................................................................................................... -55 ~ +150 °C Junction Temperature ................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C) ............................................................................................................... 350 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage ......................................................................................................................... 450 V VCEO Collector to Emitter Voltage ...................................................................................................................... 400 V VEBO Emitter to Base Voltage ................................................................................................................................ 6 V IC Collector Current ........................................................................................................................................ 300 mA Electrical Characteristics (TA=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO ICES *VCE(sat)1 *VCE(sat)2 *VCE(sat)3 *VBE(sat) *hFE1 *hFE2 *hFE3 *hFE4 Cob Min. 450 400 6 40 50 45 40 Typ. 4 Max. 100 100 500 400 500 750 750 300 6 pF Unit V V V nA nA nA mV mV mV mV IC=100uA IC=1mA IE=10uA VCB=400V VEB=4V VCE=400V IC=1mA, IB=0.1mA IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA VCB=20V, f=1MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Test Conditions HMBTA44 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 Spec. No. : HN200208 Issued Date : 1993.06.23 Revised Date : 2004.09.08 Page No. : 2/4 Saturation Voltage & Collector Current 1000 VCE(sat) @ IC=10IB 125 C 100 o Saturation Voltage (mV) hFE 75 C o 25 C o 125 C 75 C 100 25 C o o o hFE @ VCE=10V 10 1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current-IC (mA) Collector Current-IC (mA) Saturation Voltage & Collector Current 1000 o Capacitance & Reverse-Biased Voltage 100 25 C Saturation Voltage (mV) 75 C o 125 C VBE(sat) @ IC=10IB Capacitance (pF) o 10 Cob 100 0.1 1 10 100 1000 Collector Current-IC (mA) 1 0.1 1 10 100 Reverse-Biased Voltage (V) HMBTA44 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-23 Dimension Marking: A L Spec. No. : HN200208 Issued Date : 1993.06.23 Revised Date : 2004.09.08 Page No. : 3/4 3 3 Z Pb Free Mark Pb-Free: " " (Note) Normal: None BS 1 2 Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. Pin Style: 1.Base 2.Emitter 3.Collector Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 V G DIM A B C D G H J K L S V Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25 Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65 *: Typical, Unit: mm C D H 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N K J Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMBTA44 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HN200208 Issued Date : 1993.06.23 Revised Date : 2004.09.08 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly