HMBTA64

HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 1/4 HMBTA64 PNP SILICON TRANSISTOR Description The HMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA. SOT-23 Features • High D.C. Current Gain • For Complementary use with NPN Type HMBTA14 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature........................................................................................................................... -55 ~ +150 °C Junction Temperature................................................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (TA=25°C)............................................................................................................... 225 mW • Maximum Voltages and Currents (TA=25°C) VCBO Collector to Base Voltage .......................................................................................................................... -30 V VCES Collector to Emitter Voltage ....................................................................................................................... -30 V VEBO Emitter to Base Voltage ............................................................................................................................. -10 V IC Collector Current ...................................................................................................................................... -500 mA Electrical Characteristics (TA=25°C) Symbol BVCBO BVCES BVEBO ICBO IEBO *VCE(sat) VBE(on) *hFE1 *hFE2 fT Min. -30 -30 -10 10K 20K 125 Typ. Max. -100 -100 -1.5 -2 MHz Unit V V V nA nA V V IC=-100uA IC=-100uA IE=-10uA VCB=-30V VEB=-10V IC=-100mA, IB=-0.1mA IC=-100mA, VCE=-5V IC=-10mA, VCE=-5V IC=-100mA, VCE=-5V IC=-100mA, VCE=-5V, f=100MHz *Pulse Test: Pulse Width ≤380us, Duty Cycle≤2% Test Conditions HMBTA64 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 100000 10000 Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 2/4 Saturation Voltage & Collector Current VCE=5V 10000 Saturation Voltage (mV) hFE 1000 VCE(s at) @ IC=1000IB 1000 10 100 1000 100 1 10 100 1000 Collector Current (mA) Collector Current (mA) On Voltage & Collector Current 10 100 Capacitance & Reverse-Biased Voltage On Voltage (mV) Capacitance (Pf) 10 Cob VBE(on) @ VCE=5V 1 1 10 100 1000 1 1 10 100 Collector Current (mA) Reverse Biased Voltage (V) Cutoff Frequency & IC 1000 10000 Safe Operating Area PT=1ms Cutoff Frequency (MHz) 1000 fT 100 Collector Current (mA) PT=100ms 100 PT=1s 10 10 1 10 100 1000 1 1 10 100 Collector Current (mA) Forward Voltage (V) HMBTA64 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. SOT-23 Dimension Marking: A L Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 3/4 2 3 V Pb Free Mark Pb-Free: " " (Note) Normal: None BS 1 2 Note: Pb-free product can distinguish by the green label or the extra description on the right side of the label. Pin Style: 1.Base 2.Emitter 3.Collector Material: • Lead solder plating: Sn60/Pb40 (Normal), Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free) • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 V G DIM A B C D G H J K L S V Min. 2.80 1.20 0.89 0.30 1.70 0.013 0.085 0.32 0.85 2.10 0.25 Max. 3.04 1.60 1.30 0.50 2.30 0.10 0.177 0.67 1.15 2.75 0.65 *: Typical, Unit: mm C D H 3-Lead SOT-23 Plastic Surface Mounted Package HSMC Package Code: N K J Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. • HSMC reserves the right to make changes to its products without notice. • HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory: • Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454 • Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel: 886-3-5983621~5 Fax: 886-3-5982931 HMBTA64 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Soldering Methods for HSMC’s Products 1. Storage environment: Temperature=10oC~35oC Humidity=65%±15% 2. Reflow soldering of surface-mount devices Figure 1: Temperature profile tP TP Ramp-up TL Tsmax Temperature tL Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 4/4 Critical Zone TL to TP Tsmin tS Preheat Ramp-down 25 t 25oC to Peak Time Profile Feature Average ramp-up rate (TL to TP) Preheat - Temperature Min (Tsmin) - Temperature Max (Tsmax) - Time (min to max) (ts) Tsmax to TL - Ramp-up Rate Time maintained above: - Temperature (TL) - Time (tL) Peak Temperature (TP) Time within 5oC of actual Peak Temperature (tP) Ramp-down Rate Time 25oC to Peak Temperature 3. Flow (wave) soldering (solder dipping) Products Pb devices. Pb-Free devices. Sn-Pb Eutectic Assembly