UT62L1024LC-70LL

 UTRON Rev. 1.7 FEATURES Access time : 35/55/70ns (max.) Low power consumption : Operating : 40/35/30 mA (typical) Standby : 2.5µA (typical) L-version 0.5µA (typical) LL-version Power supply range : 2.7V to 3.6V All inputs and outputs TTL compatible Fully static operation Three state outputs Data retention voltage : 2V (min.) Package : 32-pin 600 mil PDIP 32-pin 450 mil SOP 32-pin 8x20 mm TSOP-1 32-pin 8x13.4 mm STSOP UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM GENERAL DESCRIPTION The UT62L1024 is a 1,048,576-bit low power CMOS static random access memory organized as 131,072 words by 8 bits. It is fabricated using high performance, high reliability CMOS technology. Easy memory expansion is provided by using two chip enable input.( CE 1 ,CE2) It is particularly well suited for battery back-up nonvolatile memory application. The UT62L1024 operates from a single 2.7V~ 3.6V power supply and all inputs and outputs are fully TTL compatible. FUNCTIONAL BLOCK DIAGRAM 2048 × 512 MEMORY ARRAY A0-A16 DECODER Vcc Vss I/O1-I/O8 I/O DATA CIRCUIT COLUMN I/O CE1 CE2 OE WE CONTROL CIRCUIT UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80033 1  UTRON Rev. 1.7 PIN CONFIGURATION NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O1 I/O2 I/O3 Vss 1 2 3 4 32 31 30 29 Vcc A15 CE2 WE A11 A9 A8 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM 32 31 30 29 28 27 26 OE A10 CE1 I/O8 I/O7 I/O6 I/O5 I/O4 Vss I/O3 I/O2 I/O1 A0 A1 A2 A3 5 6 7 8 9 10 11 12 13 14 15 16 28 27 26 25 24 23 22 21 20 19 18 17 A13 A8 A9 A11 OE A10 PDIP / SOP PIN DESCRIPTION SYMBOL A0 - A16 I/O1 - I/O8 CE 1 ,CE2 WE OE VCC VSS NC DESCRIPTION Address Inputs Data Inputs/Outputs Chip enable 1,2 Inputs Write Enable Input Output Enable Input Power Supply Ground No Connection UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 UT62L1024 WE CE2 A15 Vcc NC A16 A14 A12 A7 A6 A5 A4 UT62L1024 25 24 23 22 21 20 19 18 17 CE1 I/O8 I/O7 I/O6 I/O5 I/O4 TSOP-I/STSOP P80033 2  UTRON Rev. 1.7 ABSOLUTE MAXIMUM RATINGS* PARAMETER Terminal Voltage with Respect to Vss Operating Temperature Storage Temperature Power Dissipation DC Output Current Soldering Temperature (under 10 sec) SYMBOL VTERM TA TSTG PD IOUT Tsolder UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM RATING -0.5 to +4.6 0 to +70 -65 to +150 1 50 260 UNIT V ℃ ℃ W mA ℃ *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability. TRUTH TABLE MODE Standby Standby Output Disable Read Write CE1 H X L L L CE2 X L H H H OE X X H L X WE X X H H L I/O OPERATION High - Z High -Z High - Z DOUT DIN SUPPLY CURRENT ISB,ISB1 ISB,ISB1 ICC , ICC1 ICC , ICC1 ICC , ICC1 Note: H = VIH, L=VIL, X = Don't care. DC ELECTRICAL CHARACTERISTICS (VCC = 2.7V~3.6V, Ta = 0℃ to +70℃) PARAMETER SYMBOL TEST CONDITION Input High Voltage VIH Input Low Voltage VIL Input Leakage Current IIL VSS ≦VIN ≦VCC Output Leakage Current IOL VSS ≦VI/O≦VCC CE 1 =VIH or CE2 = VIL or Output High Voltage Output Low Voltage Average Operating Power Supply Courrent VOH VOL ICC OE = VIH or WE = VIL IOH = - 1mA IOL= 4mA Cycle time =Min. 100% Duty, CE 1 =VIL, CE2 = VIH, II/O = 0mA Cycle time = 1µs, 100% Duty, . CE 1 ≦0.2V,CE2≧VCC-0.2V, II/O = 0mA CE 1 =VIH or CE2 = VIL CE 1 ≧VCC-0.2V or .CE2≦0.2V -L LL MIN. TYP. MAX. UNIT 2.0 VCC+0.5 V - 0.5 0.6 V -1 1 µA -1 2.2 40 35 30 2.5 0.5 1 0.4 60 50 40 5 1.0 100 20* 40 10* µA V V mA mA mA mA mA µA µA 35 55 70 ICC1 Standby Power Supply Current ISB ISB1 *Those parameters are for reference only under 50℃ UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80033 3  UTRON Rev. 1.7 CAPACITANCE (Ta=25℃, f=1.0MHz) PARAMETER Input Capacitance Input/Output Capacitance SYMBOL CIN CI/O MIN. UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM - MAX. 6 8 UNIT pF pF Note : These parameters are guaranteed by device characterization, but not production tested. AC TEST CONDITIONS Input Pulse Levels Input Rise and Fall Times Input and Output Timing Reference Levels Output Load 0.4V to 2.4V 5ns 1.5V CL=50pF, IOH/IOL=-1mA/2mA AC ELECTRICAL CHARACTERISTICS (VCC = 2.7V~3.6V , Ta = 0℃ to +70℃) (1) READ CYCLE PARAMETER SYMBOL UT62L1024-35 UT62L1024-55 UT62L1024-70 UNIT MIN. MAX. MIN. MAX. MIN. MAX. Read Cycle Time tRC 35 55 70 ns Address Access Time tAA 35 55 70 ns Chip Enable Access Time tACE1, tACE2 35 55 70 ns Output Enable Access Time tOE 25 30 35 ns Chip Enable to Output in Low-Z tCLZ1*, tCLZ2* 10 10 10 ns Output Enable to Output in Low-Z tOLZ* 5 5 5 ns Chip Disable to Output in High-Z tCHZ1*, tCHZ2* 25 30 35 ns Output Disable to Output in High-Z tOHZ* 25 30 35 ns Output Hold from Address Change tOH 5 5 5 ns (2) WRITE CYCLE PARAMETER Write Cycle Time Address Valid to End of Write Chip Enable to End of Write Address Set-up Time Write Pulse Width Write Recovery Time Data to Write Time Overlap Data Hold from End of Write-Time Output Active from End of Write Write to Output in High-Z SYMBOL tWC tAW tCW1, tCW2 tAS tWP tWR tDW tDH tOW* tWHZ* UT62L1024-35 UT62L1024-55 UT62L1024-70 UNIT ns ns ns ns ns ns ns ns ns ns MIN. 35 30 30 0 25 0 20 0 5 - MAX. 15 MIN. 55 50 50 0 40 0 25 0 5 - MAX. MIN. 70 60 60 0 45 0 30 0 5 20 - MAX. 25 *These parameters are guaranteed by device characterization, but not production tested. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80033 4  UTRON Rev. 1.7 TIMING WAVEFORMS READ CYCLE 1 (Address Controlled) (1,2,4) tRC UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM Address tAA tOH tOH DOUT Data Valid READ CYCLE 2 ( CE1 , CE2 and OE Controlled) (1,3,5,6) t RC Address CE1 t AA t ACE1 CE2 t ACE2 OE t CLZ1 t CLZ2 Dout HIGH-Z t OE t OLZ t OH t OHZ t CHZ1 t CHZ2 HIGH-Z Data Valid Notes : 1. WE is HIGH for a read cycle. 2. Device is continuously selected OE , CE 1 =VIL and CE2=VIH. 3. Address must be valid prior to or coincident with CE 1 4. OE is low. low and CE2 high transition; otherwise tAA is the limiting parameter. 5. tCLZ1, tCLZ2, tOLZ, tCHZ1, tCHZ2 and tOHZ are specified with CL=5pF. Transition is measured ± 500mV from steady state. 6. At any given temperature and voltage condition, tCHZ1 is less than tCLZ1, tCHZ2 is less than tCLZ2, tOHZ is less than tOLZ. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80033 5  UTRON Rev. 1.7 WRITE CYCLE 1 ( WE Controlled) (1,2,3,5) t WC Address t AW CE1 t CW1 CE2 t CW2 UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM t AS WE t WHZ Dout Din (4) t WP t WR t OW High-Z t DW Data Valid t DH (4) WRITE CYCLE 2 ( CE 1 and CE2 Controlled) (1,2,5) t WC Address t AW CE1 t AS t CW1 t CW2 t WR CE2 WE t WP t WHZ Dout High-Z t DW Din Data Valid t DH Notes : 1. WE or CE 1 must be HIGH or CE2 must be LOW during all address transitions. 2. A write occurs during the overlap of a low CE 1 , a high CE2 and a low WE . 3. During a WE controlled with write cycle with OE LOW, tWP must be greater than tWHZ+tDW to allow the I/O drivers to turn off and data to be placed on the bus. 4. During this period, I/O pins are in the output state, and input singals must not be applied. 4. If the CE 1 LOW transition occurs simultaneously with or after WE LOW transition, the outputs remain in a high Impedance state. 6. tOW and tWHZ are specified with CL=5pF. Transition is measured ± 500mV from steady state. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80033 6  UTRON Rev. 1.7 DATA RETENTION CHARACTERISTICS (Ta = 0℃ to +70℃) PARAMETER Vcc for Data Retention Data Retention Current SYMBOL TEST CONDITION VDR CE 1 ≧ VCC-0.2V or CE2 ≤ 0.2V IDR Vcc=2V CE 1 ≧ VCC-0.2V or CE2 ≤ 0.2V See Data Retention Waveforms (below) UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM MIN. TYP. MAX. 2.0 3.3 -L - LL 0 tRC* 1 0.5 40 20* 20 5* - UNIT V µA µA ns ns Chip Disable to Data Retention Time Recovery Time tCDR tR tRC* = Read Cycle Time *Those parameters are for reference only under 50℃ DATA RETENTION WAVEFORM Date Retention Mode VCC 2.7V VDR ≧ 2.0V 2.7V tR VIH CE1 ≧ VCC -0.2V CE1 VSS CE2 tCDR VIH VIL CE2 ≤ 0.2V VIL UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80033 7  UTRON Rev. 1.7 PACKAGE OUTLINE DIMENSION 32 pin 600 mil PDIP Package Outline Dimension UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM UNIT SYMBOL INCH(BASE) 0.010 (MIN) 0.150 ± 0.005 0.018 ± 0.005 0.050 ± 0.005 0.010 ± 0.004 1.650 ± 0.005 0.600 ± 0.010 0.544 ± 0.004 0.100 (TYP) 0.640± 0.020 0.130 ± 0.010 0.075 ± 0.010 0.070 ± 0.005 MM(REF) 0.254 (MIN) 3.810 ± 0.127 0.457± 0.127 1.270± 0.127 0.254± 0.102 41.910 ± 0.127 15.240 ± 0.254 13.818 ± 0.102 2.540 (TYP) 16.256 ± 0.508 3.302 ± 0.254 1.905 ± 0.254 1.778 ± 0.127 A A A1 A2 B B1 c D E E1 e eB L S Q1 Note: 1. D/E1/S DIMENSION DO NOT INCLUDE MOLD FLASH. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80033 8  UTRON Rev. 1.7 32 pin 450mil SOP Package Outline Dimension UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM UNIT SYMBOL A A C A A1 A2 b c D E E1 e L L1 S y Θ INCH(BASE) 0.118 (MAX) 0.004(MIN) 0.111(MAX) 0.016(TYP) 0.008(TYP) 0.817(MAX) 0.445 ± 0.005 0.555 ± 0.012 0.050(TYP) 0.0347 ± 0.008 0.055 ± 0.008 0.026(MAX) 0.004(MAX) o o 0 -10 MM(REF) 2.997 (MAX) 0.102(MIN) 2.82(MAX) 0.406(TYP) 0.203(TYP) 20.75(MAX) 11.303 ± 0.127 14.097 ± 0.305 1.270(TYP) 0.881 ± 0.203 1.397 ± 0.203 0.066 (MAX) 0.101(MAX) o o 0 -10 UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80033 9  UTRON Rev. 1.7 32 pin TSOP-I Package Outline Dimension UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM UNIT SYMBOL INCH(BASE) 0.047 (MAX) 0.004 ± 0.002 0.039 ± 0.002 0.008 + 0.002 - 0.001 0.005 (TYP) 0.724 ± 0.004 0.315 ± 0.004 0.020 (TYP) 0.787 ± 0.008 0.0197 ± 0.004 0.0315 ± 0.004 0.003 (MAX) o o 0 〜5 MM(REF) 1.20 (MAX) 0.10 ± 0.05 1.00 ± 0.05 0.20 + 0.05 -0.03 0.127 (TYP) 18.40 ± 0.10 8.00 ± 0.10 0.50 (TYP) 20.00 ± 0.20 0.50 ± 0.10 0.08 ± 0.10 0.076 (MAX) o o 0 〜5 C A A1 A2 b c D E e HD L L1 y Θ E C H B UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80033 10  UTRON Rev. 1.7 32 pin 8mm x 13.4mm STSOP Package Outline Dimension HD UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM c L 12° (2x) 1 32 12° (2x) e 16 17 "A" D Seating Plane b E y 12° (2X) 16 17 GAUGE PLANE A A2 c 0.254 0 A1 SEATING PLANE 12° (2X) L1 L "A" DATAIL VIEW 1 32 UNIT SYMBOL INCH(BASE) MM(REF) c A A1 A2 b c D E e HD L L1 y Θ 0.049 (MAX) 1.25 (MAX) 0.005 ± 0.002 0.130 ± 0.05 0.039 ± 0.002 1.00 ± 0.05 ± 0.01 0.008 0.20± 0.025 0.005 (TYP) 0.127 (TYP) 0.465 ± 0.004 11.80 ± 0.10 0.315 ± 0.004 8.00 ± 0.10 0.020 (TYP) 0.50 (TYP) 0.528± 0.008 13.40 ± 0.20. 0.0197 ± 0.004 0.50 ± 0.10 0.0315 ± 0.004 0.8 ± 0.10 0.003 (MAX) 0.076 (MAX) o o o o 0 〜5 0 〜5 UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80033 11  UTRON Rev. 1.7 ORDERING INFORMATION PART NO. UT62L1024PC-35L UT62L1024PC-35LL UT62L1024PC-55L UT62L1024PC-55LL UT62L1024PC-70L UT62L1024PC-70LL UT62L1024SC-35L UT62L1024SC-35LL UT62L1024SC-55L UT62L1024SC-55LL UT62L1024SC-70L UT62L1024SC-70LL UT62L1024LC-35L UT62L1024LC-35LL UT62L1024LC-55L UT62L1024LC-55LL UT62L1024LC-70L UT62L1024LC-70LL UT62L1024LS-35L UT62L1024LS-35LL UT62L1024LS-55L UT62L1024LS-55LL UT62L1024LS-70L UT62L1024LS-70LL ACCESS TIME (ns) 35 35 55 55 70 70 35 35 55 55 70 70 35 35 55 55 70 70 35 35 55 55 70 70 STANDBY CURRENT (µA) (max) Ta = 50℃ 20 10 20 10 20 10 20 10 20 10 20 10 20 10 20 10 20 10 20 10 20 10 20 10 UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM PACKAGE 32 PIN PDIP 32 PIN PDIP 32 PIN PDIP 32 PIN PDIP 32 PIN PDIP 32 PIN PDIP 32 PIN SOP 32 PIN SOP 32 PIN SOP 32 PIN SOP 32 PIN SOP 32 PIN SOP 32 PIN TSOP-I 32 PIN TSOP-I 32 PIN TSOP-I 32 PIN TSOP-I 32 PIN TSOP-I 32 PIN TSOP-I 32 PIN STSOP 32 PIN STSOP 32 PIN STSOP 32 PIN STSOP 32 PIN STSOP 32 PIN STSOP UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80033 12  UTRON Rev. 1.7 REVISION HISTORY REVISION Rev. 1.0 Rev. 1.1 Rev. 1.2 Rev. 1.3 Rev. 1.4 Rev. 1.5 Rev. 1.6 DESCRIPTION Original. 128Kx 8 Low Voltage CMOS SRAM 之TN8106 body 已作fine UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM DATE Jun. 01. 1997 Apr. 05. 2000 Aug. 29. 2000 Sep. 01. 2000 Dec. 01. 2000 Mar. 15. 2001 Jun. 26. 2001 Rev. 1.7 tunings,將ISB1降為0.5uA(LL)、2uA(L)、Vcc range：3.0V~3.6V Add STSOP-I Package Modify the format of power consumption Add speed : -55ns Vcc min 3.1→2.7V 1. The symbols CE1# ,OE# & WE# are revised as CE1 , OE & WE . 2. Add Icc value of 55ns range(access time) . 3. VOH is revised as 2.2V. 4. ISB1 is revised as 100µs. Revised 32 pin 8mmx13.4mm STSOP Package Outline Dimension. Nov. 26. 2001 UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80033 13  UTRON Rev. 1.7 UT62L1024 128K X 8 BIT LOW POWER CMOS SRAM THIS PAGE IS LEFT BLANK INTENTIONALLY. UTRON TECHNOLOGY INC. 1F, No. 11, R&D Rd. II, Science-Based Industrial Park, Hsinchu, Taiwan, R. O. C. TEL: 886-3-5777882 FAX: 886-3-5777919 P80033 14