IS62C1024LL-70T

IS62C1024LL IS62C1024LL .EATURES 128K x 8 LOW POWER CMOS STATIC RAM • High-speed access time: 70 ns • Low active power: 350 mW (typical) • Low standby power: 125 µW (typical) CMOS standby • Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications • .ully static operation: no clock or refresh required • TTL compatible inputs and outputs • Single 5V (±10%) power supply • Data retention voltage: 2V(min.) performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62C1024LL is available in 32-pin 600mil DIP, 450mil SOP and 8*20mm TSOP-1 packages. DESCRIPTION The 1+51 IS62C1024LL is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using 1 +51 's high- .UNCTIONAL BLOCK DIAGRAM A0-A16 DECODER 512 x 2048 MEMORY ARRAY VCC GND I/O DATA CIRCUIT I/O0-I/O7 COLUMN I/O CE1 CE2 OE WE CONTROL CIRCUIT ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc. Integrated Circuit Solution Inc. SR028-0C 1 IS62C1024LL PIN CON.IGURATION 32-Pin SOP and DIP NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 PIN CON.IGURATION 32-Pin 8x20mm TSOP-1 A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 PIN DESCRIPTIONS A0-A16 CE1 CE2 OE WE I/O0-I/O7 Vcc GND Address Inputs Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Write Enable Input Input/Output Power Ground OPERATING RANGE Range Commercial Ambient Temperature 0°C to +70°C VCC 5V ± 10% TRUTH TABLE Mode Not Selected (Power-down) Output Disabled Read Write WE X X H H L CE1 H X L L L CE2 X L H H H OE X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN Vcc Current ISB, ISB ISB, ISB ICC ICC ICC 2 Integrated Circuit Solution Inc. SR028-0C IS62C1024LL ABSOLUTE MAXIMUM RATINGS(1) Symbol VTERM TBIAS TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current (LOW) Value –0.5 to +7.0 –45 to +85 –65 to +150 1.5 20 Unit V °C °C W mA Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE(1,2) Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit p. p. Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V. DC ELECTRICAL CHARACTERISTICS (Over Operating Range) Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage Input Leakage Output Leakage Test Conditions VCC = Min., IOH = –1.0 mA VCC = Min., IOL = 2.1 mA Min. 2.4 — 2.2 –0.3 –2 –2 Max. — 0.4 VCC + 0.5 0.8 1 1 Unit V V V V µA µA GND ≤ VIN ≤ VCC GND ≤ VOUT ≤ VCC Com. Com. Notes: 1. VIL = –3.0V for pulse width less than 10 ns. POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter ICC1 ICC2 ISB ISB Vcc Dynamic Operating Supply Current Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., CE = VIL IOUT = 0 mA, f = fMAX VCC = Max., CE = VIL IOUT = 0 mA, f = 1 MHZ VCC = Max., VIN = VIH or VIL, CE1 ≥ VIH, or CE2 ≤ VIL, f = 0 VCC = Max., CE1 ≤ VCC – 0.2V, CE2 ≤ 0.2V, VIN > VCC – 0.2V, or VIN ≤ 0.2V, f = 0 Com. Com. Com. Com. -70 ns Min. Max. Unit — — — — 70 15 2 25 mA mA mA µA Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. Integrated Circuit Solution Inc. SR028-0C 3 IS62C1024LL READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range) Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE1 Access Time CE2 Access Time OE Access Time    Min. 70 — 3 — — — 0 0 10 10 0 -70 Max. — 70 — 70 70 35 — 25 — — 25 Unit ns ns ns ns ns ns ns ns ns ns ns tRC tAA tOHA tACE tACE tDOE tHZOE tLZCE tLZOE  OE to Low-Z Output OE to High-Z Output CE1 to Low-Z Output CE2 to Low-Z Output tLZCE tHZCE  CE1 or CE2 to High-Z Output Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in .igure 1a. 2. Tested with the load in .igure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. AC TEST CONDITIONS Parameter Input Pulse Level Input Rise and .all Times Input and Output Timing and Reference Level Output Load Unit 0V to 3.0V 5 ns 1.5V See .igures 1a and 1b AC TEST LOADS 480 Ω 5V 5V 480 Ω OUTPUT 30 pF Including jig and scope 255 Ω OUTPUT 5 pF Including jig and scope 255 Ω .igure 1a. 4 .igure 1b. Integrated Circuit Solution Inc. SR028-0C IS62C1024LL AC WAVE.ORMS READ CYCLE NO. 1(1,2) tRC ADDRESS tAA tOHA tOHA DATA VALID DOUT READ CYCLE NO. 2(1,3) tRC ADDRESS tAA tOHA OE tDOE tHZOE CE1 tACE1/tACE2 tLZOE CE2 tLZCE1/ tLZCE2 HIGH-Z tHZCE DATA VALID DOUT Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions. Integrated Circuit Solution Inc. SR028-0C 5 IS62C1024LL WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range, Standard and Low Power) Symbol Parameter Write Cycle Time CE1 to Write End CE2 to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time " Min. 70 60 60 60 0 0 50 30 0 — 5 -70 Max. — — — — — — — — — 25 — Unit ns ns ns ns ns ns ns ns ns ns ns tWC tSCE tSCE tAW tHA tSA tPWE tSD tHD tHZWE tLZWE   WE Pulse Width Data Setup to Write End Data Hold from Write End WE LOW to High-Z Output WE HIGH to Low-Z Output Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in .igure 1a. 2. Tested with the load in .igure 1b. Transition is measured ±500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 4. Tested with OE HIGH. AC WAVE.ORMS WRITE CYCLE NO. 1 (9- Controlled)(1,2) tWC ADDRESS tSCE1 tHA CE1 tSCE2 CE2 tAW tPWE(4) tSA tHZWE HIGH-Z WE tLZWE DOUT DATA UNDEFINED tSD tHD DIN DATA-IN VALID 6 Integrated Circuit Solution Inc. SR028-0C IS62C1024LL WRITE CYCLE NO. 2 (+-, CE2 Controlled)(1,2) tWC ADDRESS tSA tSCE1 tHA CE1 tSCE2 CE2 tAW tPWE(4) WE tHZWE tLZWE HIGH-Z DOUT DATA UNDEFINED tSD tHD DIN DATA-IN VALID Notes: 1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE = VIH. DATA RETENTION SWITCHING CHARACTERISTICS Symbol Parameter Vcc for Data Retention Data Retention Current Data Retention Setup Time Recovery Time Test Condition See Data Retention Waveform Vcc = 3.0V, CE1 > Vcc – 0.2V Vcc = 3.0V, CE2 < 0.2V See Data Retention Waveform See Data Retention Waveform Com. Com. Min. 2.0 — — 0 Max. 5.5 10 10  Unit V µA µA ns ms VDR IDR tSDR tRDR — — 5 Notes: 1. IDR Maximum 3 µA @ TA 0oC to 40oC. DATA RETENTION WAVE.ORM (+- Controlled) tSDR VCC Data Retention Mode tRDR 5.0V 3.0V VDR CE1 ≥ VCC - 0.2V CE1 GND Integrated Circuit Solution Inc. SR028-0C 7 IS62C1024LL DATA RETENTION WAVE.ORM (CE2 Controlled) Data Retention Mode VCC tSDR tRDR 5.0V CE2 3.0V VDR 0.4V GND CE2 ≤ 0.2V ORDERING IN.ORMATION Commercial Range: 0°C to +70°C Speed (ns) 70 70 70 Order Part No. Package IS62C1024LL-70W 600mil DIP IS62C1024LL-70Q 450mil SOP IS62C1024LL-70T 8*20mm TSOP-1 HEADQUARTER: NO.2, TECHNOLOGY RD. V, SCIENCE-BASED INDUSTRIAL PARK, HSIN-CHU, TAIWAN, R.O.C. TEL: 886-3-5780333 .ax: 886-3-5783000 BRANCH O..ICE: 7., NO. 106, SEC. 1, HSIN-TAI 5TH ROAD, HSICHIH TAIPEI COUNTY, TAIWAN, R.O.C. TEL: 886-2-26962140 .AX: 886-2-26962252 http://www.icsi.com.tw 8 Integrated Circuit Solution Inc. SR028-0C Integrated Circuit Solution Inc.