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FBA50CA50

FBA50CA50

  • 厂商:

    ETC1

  • 封装:

  • 描述:

    FBA50CA50 - dual power MOSFET module designed for fast swiching - List of Unclassifed Manufacturers

  • 数据手册
  • 价格&库存
FBA50CA50 数据手册
MOSFET MODULE FBA50CA45/50 FBA50CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. ( 2 devices are serial connected.) The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ● ID=50A, ● Suitable UL;E76102 M) ( VDSS=500V for high speed switching applications. ● Low ON resistance. ● Wide Safe Operating Areas. (Applications) UPS CVCF) Motor Control, Switching Power Supply, etc. ( , 107.5±0.6 93±0.3 4-M5 4 17 4 35±0.6 1 2 3 4 78 56 2- 6.5 φ 19 19 19 TAB =110 (T0.5) 30max NAME PLATE D2 S1 q S2 D1 we S1 r i G2 u S2 y S1 t G1 Unit:A ■Maximum Ratings Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage(R.M.S.) Mounting Torque Mass Mounting M6) ( Terminal(M5) A.C. 1minute Recommended Value 2.5-3.9(25-40) Recommended Value 1.5-2.5(15-25) Typical Value Tc=25℃ D.C. Pulse Conditions (Tj=25℃ unless otherwise specified) Ratings FBA50CA45 FBA50CA50 450 ±20 50 100 50 320 150 −40 to +125 2500 4.7(48) 2.7(28) 220 500 Unit V V A A W ℃ ℃ V N・m (kgf・B) g ■Electrical Characteristics Symbol IGSS IDSS ( DSS V BR) ( VGS th) ( RDS on) ( VDS on) (Tj=25℃ unless otherwise specified) Conditions VGS=±20V,VDS=0V VGS=0V,VDS=500V VGS=0V,ID=1mA VDS=VGS,ID=10mA ID=25A,VGS=15V ID=25A,VGS=15V VDS=10V,ID=25A VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz 60 RL=12Ω,RGS=50Ω,VGS=15V ID=25A,RG=5Ω ーID=25A,VGS=0V ーID=25A,VGS=0V,di/dt=100A/μs 700 0.39 60 650 130 1.5 V ns ℃/W ns 30 10000 1900 750 450 500 1.0 5.0 120 3.0 Ratings Min. Typ. Max. ±1.0 1.0 Unit μA mA V V mΩ V S pF pF pF Item Gate Leakage Current Zero Gate Voltage Drain Current FBA50CA45 Drain-Source Breakdown Voltage FBA50CA50 Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time gfs Ciss Coss Crss td on) ( tr td off) ( tf VSDS trr Rth j-c) Thermal Resistance ( SanRex 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com 31max FBA50CA45/50 10 0 8 0 Output Characteristics Typical) ( Tj 25℃ Pulse Test 5 0 4 0 3 0 Forward Transfer Characteristics Typical) ( VDS 10V Pulse Test Drain Current ID A) ( 15V 10V 8V 6V 6 0 Drain Current ID A) ( Tj 25℃ 4 0 5V 2 0 1 0 0 0 2 0 0 0 VGS 4V 2 4 6 8 1 0 1 2 3 4 5 6 Drain-Source Voltage VDS (V) Gate-Source Voltage VGS (V) Drain-Source On-State Resistance R S o ) D( n(Ω) Forward Transconductance gs f (S) 10 0 5 0 Forward Transconductance Vs. Drain Current 03 . Drain-Source On-State Resistance Vs. Drain Current Typical Pulse Test VGS 10V Tj 25℃ 02 . Tj 2 0 VDS 25V Pulse Test 100℃ 1 0 5 01 . Tj 25℃ Tj −25℃ 2 1 2 5 1 0 2 0 5 0 0 0 2 5 5 0 7 5 10 0 15 2 10 5 D (A) Drain CurrentI D (A) Drain CurrentI Input Capacitance, Output Capacitance, Reverse Transfer Capacitance (Typical) 2 12 0 Safe Operating Area Pw Capacitance C P ) (F Drain Current ID A) ( 5 2 11 0 5 2 10 0 5 2 10 0 Tj 25℃ Non-Repetitive 10 0μ s 1m s 10 ms D. C. 10μ s 100 00 Ciss VGS 0V f 1MHz Tj 25℃ 10 00 Coss Crss FBA50CA45 FBA50CA50 10 0 0 4 0 8 0 10 2 10 6 20 0 20 4 2 5 11 0 2 5 12 0 2 5 13 0 Drain-Source Voltage VDS (V) (V) Drain-Source Voltage VDS SanRex ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com FBA50CA45/50 Thermal Impedance θ -C j (℃/W) 10 0 Forward Voltage of Free Wheeling Diode Typical VGS 0V Pulse Test 5 2 1 -1 0 5 2 1 -2 0 Transient Thermal Impedance M Max. Source Current I(A) S 8 0 6 0 Tj 25℃ 4 0 2 0 0 04 . 06 . 08 . 10 . 12 . 14 . st Normalized Transient Thermal Impedanser( ) Source-Drain VoltageVSDS (V) 5 μ10 0 μ 50 1 0 0 μ2 0 0μ m 2 m 5 m1 0 0 m 5 0 1 0 0 m2 0 0m 2 5 1m 2m m0 0 51 0 5m 0 Normalized Transient Thermal Impedanse Vs. Pulse Width 2 1 Timet (sec) [ jc t( ‐ ) θ‐ /Rhjc ] 0. 5 0 0. 2 0 0. 1 0 0. 0 5 0 D 0.5 0.2 0.1 0.05 0.02 0.01 0 5 μ 0 μ5 0 1 0 10 0 μ m 5 1 m 5 m 0 m5 0 1 m 0 0 10 0 m 51 0 (sec) Pulse Width PW SanRex ® 50 Seaview Blvd. Port Washington, NY 11050-4618 PH.(516)625-1313 FAX(516)625-8845 E-mail: semi@sanrex.com
FBA50CA50 价格&库存

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