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FBA50CA45

FBA50CA45

  • 厂商:

    SANREX

  • 封装:

  • 描述:

    FBA50CA45 - MOSFET MODULE - SanRex Corporation

  • 数据手册
  • 价格&库存
FBA50CA45 数据手册
MOSFET MODULE FCA50CC50 FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.(2 devices are serial connected with a fast recovery diode (trr≦100ns)reverse connected across each MOSFET. ) The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ● ID=50A, UL;E76102 M) ( 107.5±0.6 93±0.3 3ーM5 78 VDSS=500V ● Suitable for high speed switching applications. ● Low ON resistance. ● Wide Safe Operating Areas. ● trr≦100ns fast recovery diode for free wheel. (Applications) UPS CVCF) Motor Control, Switching Power Supply, etc. ( , D2 S1 q S2 w i G2 u S2 4 2 φ6.5 ・ 1 2 3 56 23 23 TAB =110 (T0.5) 30max NAME PLATE e D1 y S1 t G1 Unit:A ■Maximum Ratings Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage(R.M.S.) Mounting Torque Mass Mounting M6) ( Terminal(M5) A.C. 1minute Recommended Value 2.5-3.9(25-40) Recommended Value 1.5-2.5(15-25) Typical Value Tc=25℃ DC Pulse Duty 55% Conditions (Tj=25℃ unless otherwise specified) Ratings FCA50CC50 500 ±20 50 100 50 330 −40 to +150 −40 to +125 2500 4.7(48) 2.7(28) 240 Unit V V A A W ℃ ℃ V N・m (kgf・B) g ■Electrical Charactistics Symbol IGSS IDSS ( DSS V BR) ( VGS th) ( RDS on) ( VDS on) (Tj=25℃ unless otherwise specified) Conditions VGS=±20V,VDS=0V VGS=0V,VDS=500V VGS=0V,ID=1mA VDS=VGS,ID=10mA ID=25A,VGS=15V ID=25A,VGS=15V VDS=10V,ID=25A VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz 60 VDD=300V,VGS=15V ID=25A,RG=5Ω IS=25A,VGS=0V IS=25A,VGS=−5V,di/dt=100A/ s μ MOSFET Diode 80 100 520 140 2.0 100 0.38 1.67 V ns ℃/W ns 30 10000 1900 750 500 1.0 5.0 140 3.5 Ratings Min. Typ. Max. ±1.0 1.0 Unit μA mA V V mΩ V S pF pF pF Item Gate Leakage Current Zero Gate Voltage Drain Current Darin-Source Breakdown Voltage Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time gfs Ciss Coss Crss td on) ( tr td off) ( tf VSDS trr Rth j-c) Thermal Resistance ( 1 31max 4 35±0.6 17 FCA50CC50 Output Characteristics Typical) ( 10 0 Tj=25℃ Pulse Test Forward Transfer Characteristics Typical) ( 5 0 VDS 10V Pulse Test 1V 5 Drain Current ID A) ( 6 0 4 0 1V 0 8 V 6 V 5 V Drain Current ID A) ( 8 0 4 0 3 0 Tj 25℃ 2 0 1 0 0 0 4 VGs= V 2 0 0 0 2 4 6 8 1 0 3 4 5 6 Drain-Source Voltage VDS (V) Drain-Source On-State Resistance R S o ) D( n(Ω) Gate-Source Voltage VGS (V) Forward Transconductance gs f (S) 5 0 Forward Transconductance Vs. Drain Current Tj Drain-Source On-State Resistance Vs. Drain Current 03 . Pulse Test Typical 25℃ 2 0 Typical 02 . 1 0 VDS 25V Pulse Test Tj 100℃ Tj 25℃ 5 01 . Tj 25℃ 2 2 5 1 0 2 0 5 0 10 0 0 0 25 5 0 75 100 125 10 5 Drain CurrentI D (A) D (A) Drain CurrentI 100 00 Input Capacitance, Output Capacitance, Reverse Transfer Capacitance (Typical) Ciss Safe Operating Area 2 12 0 Pw Capacitance C P ) (F Drain Current ID A) ( 5 2 5 2 5 D.C . Pw Pw Pw VGs 0V f 1MHz Tj 25℃ 10 00 Coss Crss 11 0 10 μs 100 μs 1m s 10m s 10 0 Tc 25℃ Non-Repetitive 10 0 0 4 0 8 0 10 2 10 6 20 0 20 4 2 Drain-Source Voltage VDS (V) 5 11 0 2 5 12 0 2 5 13 0 Drain-Source Voltage VDS (V) 2 FCA50CC50 Forward Voltage of Free Wheeling Diode Reverse Recovery CurrentI (A) r r 10 0 4 0 Reverse Recovery Characteristics Typical dis/dt 100A/μs VGS ー5V 8 0 6 0 4 0 Typical VGs 0V Pulse Test 2 0 trr 20 0 Tj 25℃ lrr 1 0 trr 10 0 Tj 125℃ 5 lrr 5 0 25℃ 150℃ 2 0 0 0 05 . 10 . 15 . 20 . 25 . 2 5 1 0 2 0 5 0 2 0 10 0 Drain-Source Voltage VSDS (V) (A) Source Current - S I Thermal Impedance θ - (℃/W) jc Max. Max. Thermal Impedance θ - (℃/W) jc 1 0 5 2 Transient Thermal Impedance (MO F T) SE 5 2 10 0 5 50msec-10sec Transient Thermal Impedance I D (D O E) Max. 50msec-10sec 1 -1 0 50μsec-10sec 5 1msec-50msec 2 1 -1 0 5 1 m 5 m1 0 0 m 5 0 1 0 0 m2 0 0m 2 m 2 5 1m2m 5m m0 0 0 51 0 2 2 m 2 5 1m2m 5m m0 0 0 51 0 1 -2 0 5 μ1 0 0 μ 5 0 1 0 0 μ2 0 0μ m 5 m1 0 0 m 5 0 1 0 0 m2 0 0m Timet (sec) Time(sec) t 3 Reverse Recovery Time t r r (ns) 40 0 Source Current -IS (A) MOSFET MODULE FCA75CC50 FCA75CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. (2 devices are serial connected with a fast recovery diode (trr≦100ns)reverse connected across each MOSFET. ) The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ● ID=75A, UL;E76102 M) ( 107.5±0.6 93±0.3 3ーM5 78 VDSS=500V ● Suitable for high speed switching applications. ● Low ON resistance. ● Wide Safe Operating Areas. ● trr≦100ns fast recovery diode for free wheel. (Applications) UPS CVCF) Motor Control, Switching Power Supply, etc. ( , D2 S1 q S2 w i G2 u S2 4 2 φ6.5 ・ 1 2 3 56 23 23 TAB =110 (T0.5) 30max NAME PLATE e D1 y S1 t G1 Unit:A ■Maximum Ratings Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage(R.M.S.) Mounting Torque Mass Mounting M6) ( Terminal(M5) A.C. 1minute Recommended Value 2.5-3.9(25-40) Recommended Value 1.5-2.5(15-25) Typical Value Tc=25℃ DC Pulse Duty 35% Conditions (Tj=25℃ unless otherwise specified) Ratings FCA75CC50 500 ±20 75 150 75 430 −40 to +150 −40 to +125 2500 4.7(48) 2.7(28) 240 Unit V V A A W ℃ ℃ V N・m (kgf・B) g (Tj=25℃) Conditions VGS=±20V,VDS=0V VGS=0V,VDS=500V VGS=0V,ID=1mA VDS=VGS,ID=10mA ID=40A,VGS=15V ID=40A,VGS=15V VDS=10V,ID=40A VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz 70 VDD=300V,VGS=15V ID=40A,RG=5Ω −IS=40A,VGS=0V −IS=40A,VGS=−5V,di/dt=100A/ s μ MOSFET Diode 80 140 700 210 2.5 100 0.29 1.67 V ns ℃/W 4 ns 40 13500 2500 1000 500 1.0 5.0 110 4.4 Ratings Min. Typ. Max. ±1.0 1.0 Unit μA mA V V mΩ V S pF pF pF ■Electrical Characteristics Symbol IGSS IDSS ( DSS V BR) ( VGS th) ( RDS on) ( VDS on) Item Gate Leakage Current Zero Gate Voltage Drain Current Darin-Source Breakdown Voltage Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time gfs Ciss Coss Crss td on) ( tr td off) ( tf VSDS trr Rth j-c) Thermal Resistance ( 31max 4 35±0.6 17 FCA75CC50 Output Characteristics Typical) ( 10 0 Tj=25℃ Pulse Test 1V 5 6 0 Forward Transfer Characteristics Typical) ( VDS 10V Pulse Test Drain Current ID A) ( Drain Current ID A) ( 8 0 1V 0 8 V 6 V 5 V 5 0 4 0 Tj 6 0 4 0 4 VGs= V 25℃ 3 0 2 0 1 0 2 0 0 0 2 4 6 8 1 0 Forward Transconductance gs f (S) 10 0 5 0 Forward Transconductance Vs. Drain Current Drain-Source On-State Resistance R S o ) D( n(Ω) Drain-Source Voltage VDS (V) 0 0 3 4 5 6 Gate-Source Voltage VGS (V) 03 . Drain-Source On-State Resistance Vs. Drain Current VGS 10V Pulse Test Typical 2 0 VDS 10V Pulse Test Tj 25℃ (Typical) 02 . Tj 100℃ 1 0 01 . Tj 25℃ 5 1 2 5 1 0 2 0 5 0 10 0 Tj 25℃ 0 0 2 5 5 0 7 5 10 0 15 2 10 5 Drain CurrentI D (A) Drain CurrentI D (A) Input Capacitance, Output Capacitance, Reverse Transfer Capacitance (Typical) 2 100 00 Ciss Safe Operating Area Pw Capacitance C P ) (F Drain Current ID A) ( 12 0 5 Pw 10μ s Pw 10 s VGS 0V f 1MHz Tj 25℃ 2 11 0 5 2 10 0 5 Tc 25℃ Non-Repetitive D.C Pw . 1m ms 0μ s 10 10 00 Coss Crss 10 0 0 2 4 0 8 0 10 2 10 6 20 0 20 4 5 11 0 2 5 12 0 2 5 13 0 Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) 5 FCA75CC50 Reverse Recovery CurrentI (A) r r Source Current -IS (A) 10 4 10 2 10 0 Tj VGS 0V Pulse Test Typical dis dt 100A'μs VGS −5V Typical 2 0 trr 20 0 25℃ lrr Tj 125℃ 8 0 6 0 4 0 2 0 0 0 10 . 20 . 30 . 1 0 trr 10 0 lrr 5 25℃ 150℃ 5 0 2 5 1 0 2 0 5 0 2 0 10 0 Drain-Source Voltage VSDS (V) Source Current - S I (A) Transient Thermal Impedance (MO F T) SE Thermal Impedance θ - (℃/W) jc Maximum Thermal Impedance θ - (℃/W) jc 5 2 10 0 5 2 1 -1 0 5 Transient Thermal Impedance I D (D O E) Maximum 50msec-10sec 5 50msec-10sec 2 1 -1 0 5 50μsec-50msec 1msec-50msec 2 1 -2 0 5 μ1 0 0 μ 5 0 1 0 0 μ2 0 0μ m 5 m1 0 0 m 5 0 1 0 0 m2 0 0m 2 m 2 5 1m2m 5m m0 0 0 51 0 1 m 5 m1 0 0 m 5 0 1 0 0 m2 0 0m 2 m 2 5 1m2m 5m m0 0 0 51 0 Timet (sec) Timet (sec) Reverse Recovery Time t r r (ns) 10 6 Forward Voltage of Free Wheeling Diode 4 0 Reverse Recovery Characteristics 40 0 6 MOSFET MODULE FBA50CA45/50 FBA50CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. ( 2 devices are serial connected.) The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ● ID=50A, ● Suitable UL;E76102 M) ( VDSS=500V for high speed switching applications. ● Low ON resistance. ● Wide Safe Operating Areas. (Applications) UPS CVCF) Motor Control, Switching Power Supply, etc. ( , 107.5±0.6 93±0.3 4-M5 4 17 4 35±0.6 1 2 3 4 78 56 2- 6.5 φ 19 19 19 TAB =110 (T0.5) 30max NAME PLATE D2 S1 q S2 D1 we S1 r i G2 u S2 y S1 t G1 Unit:A ■Maximum Ratings Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage(R.M.S.) Mounting Torque Mass Mounting M6) ( Terminal(M5) A.C. 1minute Recommended Value 2.5-3.9(25-40) Recommended Value 1.5-2.5(15-25) Typical Value Tc=25℃ D.C. Pulse Conditions (Tj=25℃ unless otherwise specified) Ratings FBA50CA45 FBA50CA50 450 ±20 50 100 50 320 150 −40 to +125 2500 4.7(48) 2.7(28) 220 500 Unit V V A A W ℃ ℃ V N・m (kgf・B) g ■Electrical Characteristics Symbol IGSS IDSS ( DSS V BR) ( VGS th) ( RDS on) ( VDS on) (Tj=25℃ unless otherwise specified) Conditions VGS=±20V,VDS=0V VGS=0V,VDS=500V VGS=0V,ID=1mA VDS=VGS,ID=10mA ID=25A,VGS=15V ID=25A,VGS=15V VDS=10V,ID=25A VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz 60 RL=12Ω,RGS=50Ω,VGS=15V ID=25A,RG=5Ω ーID=25A,VGS=0V ーID=25A,VGS=0V,di/dt=100A/μs 700 0.39 60 650 130 1.5 V ns ℃/W ns 30 10000 1900 750 450 500 1.0 5.0 120 3.0 Ratings Min. Typ. Max. ±1.0 1.0 Unit μA mA V V mΩ V S pF pF pF Item Gate Leakage Current Zero Gate Voltage Drain Current FBA50CA45 Drain-Source Breakdown Voltage FBA50CA50 Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time gfs Ciss Coss Crss td on) ( tr td off) ( tf VSDS trr Rth j-c) Thermal Resistance ( 7 31max FBA50CA45/50 10 0 8 0 Output Characteristics Typical) ( Tj 25℃ Pulse Test 5 0 4 0 3 0 Forward Transfer Characteristics Typical) ( VDS 10V Pulse Test Drain Current ID A) ( 15V 10V 8V 6V 6 0 Drain Current ID A) ( Tj 25℃ 4 0 5V 2 0 1 0 0 0 2 0 0 0 VGS 4V 2 4 6 8 1 0 1 2 3 4 5 6 Drain-Source Voltage VDS (V) Gate-Source Voltage VGS (V) Drain-Source On-State Resistance R S o ) D( n(Ω) Forward Transconductance gs f (S) 10 0 5 0 Forward Transconductance Vs. Drain Current 03 . Drain-Source On-State Resistance Vs. Drain Current Typical Pulse Test VGS 10V Tj 25℃ 02 . Tj 2 0 VDS 25V Pulse Test 100℃ 1 0 5 01 . Tj 25℃ Tj −25℃ 2 1 2 5 1 0 2 0 5 0 0 0 2 5 5 0 7 5 10 0 15 2 10 5 D (A) Drain CurrentI D (A) Drain CurrentI Input Capacitance, Output Capacitance, Reverse Transfer Capacitance (Typical) 2 12 0 Safe Operating Area Pw Capacitance C P ) (F Drain Current ID A) ( 5 2 11 0 5 2 10 0 5 2 10 0 Tj 25℃ Non-Repetitive 10 0μ s 1m s 10 ms D. C. 10μ s 100 00 Ciss VGS 0V f 1MHz Tj 25℃ 10 00 Coss Crss FBA50CA45 FBA50CA50 10 0 0 4 0 8 0 10 2 10 6 20 0 20 4 2 5 11 0 2 5 12 0 2 5 13 0 Drain-Source Voltage VDS (V) (V) Drain-Source Voltage VDS 8 FBA50CA45/50 Thermal Impedance θ -C j (℃/W) 10 0 Forward Voltage of Free Wheeling Diode Typical VGS 0V Pulse Test 5 2 1 -1 0 5 2 1 -2 0 Transient Thermal Impedance M Max. Source Current I(A) S 8 0 6 0 Tj 25℃ 4 0 2 0 0 04 . 06 . 08 . 10 . 12 . 14 . st Normalized Transient Thermal Impedanser( ) Source-Drain VoltageVSDS (V) 5 μ10 0 μ 50 1 0 0 μ2 0 0μ m 2 m 5 m1 0 0 m 5 0 1 0 0 m2 0 0m 2 5 1m 2m m0 0 51 0 5m 0 Normalized Transient Thermal Impedanse Vs. Pulse Width 2 1 Timet (sec) [ jc t( ‐ ) θ‐ /Rhjc ] 0. 5 0 0. 2 0 0. 1 0 0. 0 5 0 D 0.5 0.2 0.1 0.05 0.02 0.01 0 5 μ 0 μ5 0 1 0 10 0 μ m 5 1 m 5 m 0 m5 0 1 m 0 0 10 0 m 51 0 (sec) Pulse Width PW 9 MOSFET MODULE FBA75CA45/50 FBA75CA45/50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current.( 2 devices are serial connected.) The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ● ID=75A, ● Suitable UL;E76102 M) ( VDSS=500V for high speed switching applications. ● Low ON resistance. ● Wide Safe Operating Areas. (Applications) UPS CVCF) Motor Control, Switching Power Supply, etc. ( , 107.5±0.6 93±0.3 4-M5 4 17 4 35±0.6 1 2 3 4 78 56 2- 6.5 φ 19 19 19 TAB =110 (T0.5) 30max NAME PLATE D2 S1 q S2 D1 we S1 r i G2 u S2 y S1 t G1 Unit:A ■Maximum Ratings Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage(R.M.S.) Mounting Torque Mass Mounting M6) ( Terminal(M5) A.C. 1minute Recommended Value 2.5-3.9(25-40) Recommended Value 1.5-2.5(15-25) Typical Value Tc=25℃ D.C. Pulse Duty=36% Conditions (Tj=25℃ unless otherwise specified) Ratings FBA75CA45 FBA75CA50 450 ±20 75 150 75 400 150 −40 to +125 2500 4.7(48) 2.7(28) 220 500 Unit V V A A W ℃ ℃ V N・m (kgf・B) g ■Electrical Characteristics Symbol IGSS IDSS ( DSS V BR) ( VGS th) ( RDS on) ( VDS on) (Tj=25℃ unless otherwise specified) Conditions VGS=±20V,VDS=0V VGS=0V,VDS=500V VGS=0V,ID=1mA VDS=VGS,ID=10mA ID=40A,VGS=15V ID=40A,VGS=15V VDS=10V,VD=40A VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz 60 RL=7.5Ω,RGS=50Ω,VGS=15V ID=40A,RG=5Ω ーID=40A,VGS=0V ーID=40A,VGS=0V,di/dt=100A/μs 700 0.31 120 700 210 1.5 V ns ℃/W 10 ns 40 13500 2500 1000 450 500 1.0 5.0 0.10 4.0 Ratings Min. Typ. Max. ±1.0 1.0 Unit μA mA V V Ω V S pF pF pF Item Gate Leakage Current Zero Gate Voltage Drain Current FBA75CA45 Drain-Source Breakdown Voltage FBA75CA50 Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time gfs Ciss Coss Crss td on) ( tr td off) ( tf VSDS trr Rth j-c) Thermal Resistance ( 31max FBA75CA45/50 10 0 8 0 6 0 Output Characteristics Typical) ( 15V 5 0 10V 8V 6V Forward Transfer Characteristics Typical) ( VDS 10V Pulse Test Drain Current I(A) D Drain Current I(A) D 4 0 3 0 Tj 25℃ Tj 25℃ Pulse Test 4 0 2 0 5V 2 0 1 0 VGS 0 0 4V 2 4 6 8 1 0 1 2 0 0 3 4 5 6 Drain-Source On-State Resistance R S o ) D( n(Ω) Drain-Source Voltage VDS (V) Gate-Source Voltage VGS (V) Forward Transconductance gs f (S) 10 0 5 0 Forward Transconductance Vs. Drain Current Drain-Source On-State Resistance Vs. Channel Temperature 02 . 2 0 1 0 5 VDS 10V Pulse Test Tj 25℃ (Typical) ID 75A 01 . ID 37.5A VGS 10V Pulse Test 2 05 . 1 2 5 1 0 2 0 5 0 10 0 0 −0 8 −0 4 0 4 0 8 0 10 2 10 6 Drain-Source On-State Resistance R S o ) D( n(Ω) Drain CurrentI D (A) Channel Temperature T j (℃) 02 . Drain-Source On-State Resistance Vs. Drain Current VGS 10V Pulse Test Input Capacitance, Output Capacitance, Reverse Transfer Capacitance (Typical) Capacitance C P ) (F Tj 100℃ 100 00 Ciss 01 . Tj 25℃ VGS 0V f 1MHz Tj 25℃ Tj −25℃ 10 00 Coss Crss 0 0 2 5 5 0 7 5 10 0 10 2 10 5 10 0 0 4 0 8 0 10 2 10 6 20 0 20 4 D (A) Drain CurrentI ( Drain-Source Voltage VDS V) 11 FBA75CA45/50 2 1 -2 0 5 Safe Operating Area Pw 10 2 10 0μ s 1m s 10 ms D.C . Forward Voltage of Free Wheeling Diode Tj 25℃ (Typical) Pulse Test Drain Current ID A) ( 2 11 0 5 2 10 0 5 2 5 11 0 2 5 Source Current ーI(A) S 13 0 10μ s 10 0 8 0 6 0 4 0 2 0 0 FBA75CA45 FBA75CA50 12 0 2 5 04 . 06 . 08 . 10 . 12 . 14 . st Normalized Transient Thermal Impedanser( ) [ jc t( ‐ ) θ‐ /Rhjc ] Drain-Source Voltage VDS (V) Source-Drain Voltage VSDS (V) Thermal Impedance θ -C j (℃/W) 5 2 Transient Thermal Impedance 50msec-10sec Max. Max. Normalized Transient Thermal Impedanse Vs. Pulse Width 2 1 0. 5 0 0. 2 0 0. 1 0 0. 0 5 0 D 1 -1 0 5 2 50μsec-50msec 0.5 0.2 0.1 0.05 0.02 0.01 0 1 -2 0 5 μ10 0 μ 50 1 0 0 μ2 0 0μ m 2 m 2 5 m1 0 0 m 5 0 1 0 0 m2 0 0m 5 1m 2m m0 0 51 0 5m 0 5 μ0 μ5 0 1 0 10 0 μ m 5 1 m 5 m 0 m5 0 1 m 0 0 10 0 m 51 0 (sec) Pulse PW Timet (sec) 12 MOSFET MODULE SF100BA50 13.0±0.2 8.0±0.2 SF100BA50 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ● ID=100A, UL;E76102 M) ( 2φ6.5 80.5max 52.5max 2-M5      (depth 10mm) VDSS=500V ● Suitable for high speed switching applications. ● Low ON resistance. ● Wide Safe Operating Areas. ● trr≦700ns (Applications) UPS CVCF) Motor Control, Switching Power Supply, etc. ( , w 42.8max 3 1 2 4 34.0±0.2 65.0±0.2 2.8×0.8TAB#110 31.5 29.5 8.5max NAME PLATE q S 2.0 G S 4.0 Unit:A ■Maximum Ratings Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage(R.M.S.) Mounting Torque Mass Mounting (M6) Terminal(M5) A.C. 1minute Tc=25℃ DC Pulse Duty=43% Conditions (Tj=25℃ unless otherwise specified) Ratings SF100BA50 500 ±20 100 200 100 600 −40∼+150 −40∼+125 2500 4.7(48) 2.7(28) 160 Recommended Value 2.5∼3.9 (25∼40) Recommended Value 1.5∼2.5 (15∼25) Typical Value Unit V V A A W ℃ ℃ V N・m (kgf・B) g ■Electrical Characteristics Symbol IGSS IDSS ( DSS V BR) ( VGS th) ( RDS on) ( VDS on) (Tj=25℃ unless otherwise specified) Conditions VGS=±20V,VDS=0V VGS=0V,VDS=500V VGS=0V,ID=1mA VDS=VGS,ID=10mA ID=50A,VGS=15V ID=50A,VGS=15V VDS=10A,ID=50A VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz 70 RL=6Ω,RGS=50Ω,VGS=15V ID=50A,RG=5Ω −ID=50A,VGS=0V −ID=50A,VGS=0V,di/dt=100A/ s μ 700 120 1100 280 1.5 V ns 0.21 ℃/W μs 60 20000 3800 1500 500 1.0 5.0 70 3.5 Ratings Min. Typ. Max. ±2.0 1.0 Unit μA mA V V mΩ V S pF pF pF Item Gate Leakage Current Zero Gate Voltage Drain Current Darin-Source Breakdown Voltage Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time gfs Ciss Coss Crss td on) ( tr td off) ( tf VSDS trr Rth j-c) Thermal Resistance ( 13 SF100BA50 20 0 10 6 Output Characteristics Typical) ( Tj 25℃ Pulse Test Forward Transfer Characteristics Typical) ( 10 0 VDS 10V Pulse Test Tj Drain Current ID A) ( 25℃ 15V 10V Drain Current ID A) ( 4V 10 2 8 0 8V 6V 8 0 6 0 4 0 2 0 0 0 5V 4 0 0 0 VGS 2 4 6 8 1 0 1 2 3 4 5 6 Drain-Source Voltage VDS(V) Drain-Source On-State Resistance R S o ) D( n(Ω) Drain-Source Voltage VGS(V) Forward Transconductance gs f (S) 10 0 Forward Transconductance Vs. Drain Current 0. 1 5 Drain-Source On-State Resistance Vs. Drain Current Pulse Test Typical VGS 10V 5 0 0. 1 0 Tj 100℃ 2 0 VDS 25V Pulse Test 1 0 Typical Tj 25℃ 0.5 0 Tj 25℃ Tj −25℃ 5 2 5 1 0 2 0 5 0 10 0 0 0 5 0 10 0 10 5 20 0 20 5 Drain Current ID(A) Drain Current ID(A) Input Capacitance, Output Capacitance, Reverse Transfer Capacitance (Typical) 5 Safe Operating Area 2 12 0 10 0μ s 1m s ( Drain Current ID A) Capacitance C P ) (F PW Ciss 100 00 VGS 10 μ s 0V f 1MHz Tj 25℃ 2 11 0 5 Tc 25℃ Non-Repetitive 10 00 Coss Crss 10 m s D. C 10 0 0 4 0 8 0 10 2 10 6 20 0 20 4 10 0 2 5 11 0 2 5 12 0 2 5 Drain-Source Voltage VDS(V) Drain-Source Voltage VDS(V) 14 SF100BA50 Thermal Impedance θ‐(℃/W) jc 20 0 Forward Voltage of Free Wheeling Diode VGS 0V Pulse Test Typical Tj 25℃ 5 2 Transient Thermal Impedance Max. Max. 50ms−10s Source Current ーI(A) S 10 6 10 2 8 0 4 0 0 1 -1 0 50μs−50ms 5 2 1 -2 0 0 5 μ10 0 μ 5 0 1 0 0 μ2 0 0μ m 5 m1 0 0 m 5 0 1 0 0 m2 0 0m 2 m 2 5 1m2m m0 0 51 0 5m 0 04 . 06 . 08 . 10 . 12 . 14 . st Normalized Transient Thermal Impedanser( ) Source-Drain Voltage VSDS V) ( 2 1 -1 0 Normalized Transient Thermal Impedanse Vs. Pulse Width Max. Max. Time t(sec) [ jc t( ‐ ) θ‐ /Rhjc ] 5D 2 0.5 0.2 0.1 0.05 0.02 0.01 D0 1 -2 0 5 2 5 μ1 0 5 0 1 0 0μ 0μ m 5 1 m 5 m 0 m 50 1 m0 0 10 0 m 51 0 (sec) Pulse Width PW 15 MOSFET MODULE SF150BA50 13.0±0.2 8.0±0.2 SF150BA50 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ● ID=150A, UL;E76102 M) ( 2φ6.5 80.5max 52.5max 2-M5      (depth 10mm) VDSS=500V ● Suitable for high speed switching application. ● Low ON resistance. ● Wide Safe Operating Areas. (Applications) UPS CVCF) Motor Control, Switching Power Supply, etc. ( , w 42.8max 3 1 2 4 34.0±0.2 65.0±0.2 2.8×0.8TAB#110 31.5 29.5 8.5max NAME PLATE G S S 2.0 q 4.0 Unit:A ■Maximum Ratings Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage(R.M.S.) Mounting Torque Mass Mounting M6) ( Terminal(M5) A.C. 1minute Recommended Value 2.5-3.9(25-40) Recommended Value 1.5-2.5(15-25) Typical Value Tc=25℃ DC Pulse Duty=35% Conditions (Tj=25℃ unless otherwise specified) Ratings SF150BA50 500 ±20 150 300 150 780 −40 to +150 −40 to +125 2500 4.7(48) 2.7(28) 160 Unit V V A A W ℃ ℃ V N・m (kgf・B) g ■Electrical Characteristics Symbol IGSS IDSS ( DSS V BR) ( VGS th) ( RDS on) ( VDS on) (Tj=25℃ unless otherwise specified) Conditions VGS=±20V,VDS=0V VGS=0V,VDS=500V VGS=0V,ID=1mA VDS=VGS,ID=10mA ID=75A,VGS=15V ID=75A,VGS=15V VDS=10V,ID=75A VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz 90 RL=4Ω,RGS=50Ω,VGS=15V ID=75A,RG=5Ω −ID=75A,VGS=0V −ID=75A,VGS=0V,di/dt=100A/ s μ 700 0.16 180 1400 360 1.5 V ns ℃/W ns 80 27000 5000 2000 500 1.0 5.0 50 3.75 Ratings Min. Typ. Max. ±2.0 2.0 Unit μA mA V V mΩ V S pF pF pF Item Gate Leakage Current Zero Gate Voltage Drain Current Darin-Source Breakdown Voltage Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time gfs Ciss Coss Crss td on) ( tr td off) ( tf VSDS trr Rth j-c) Thermal Resistance ( 16 SF150BA50 20 0 10 6 10 2 8 0 4 0 Output Characteristics Typical) ( Tj 25℃ Pulse Test 15V 10 0 8 0 6 0 4 0 Forward Transfer Characteristics Typical) ( Tj 25℃ Pulse Test VDS 10V 5V Drain Current ID A) ( 4V Drain Current ID A) ( 10V 8V 6V 2 0 0 0 VGS 2 4 6 8 1 0 1 2 0 3 4 5 6 Drain-Source On-State Resistance R S o ) D( n(Ω) Drain-Source Voltage V S D(V) Gate-Source Voltage VGS (V) Forward Transconductance gs f (S) 20 0 10 0 5 0 Forward Transconductance Vs. Drain Current 0. 1 0 Drain-Source On-State Resistance Vs. Channel Temperature VGS 10V Pulse Test ID 150A 0. 0 5 ID 2 0 1 0 5 1 VDS 10V Pulse Test Typical Typical Tj 25℃ 75A 2 5 1 0 2 0 5 0 10 0 20 0 0 -0 8 -0 4 0 4 0 8 0 10 2 10 6 Drain-Source On-State Resistance R S o ) D( n(Ω) D (A) Drain CurrentI Channel Temperature T j (℃) 0. 1 0 Drain-Source On-State Resistance Vs. Drain Current Pulse Test Input Capacitance, Output Capacitance, Reverse Transfer Capacitance (Typical) Capacitance C P ) (F Ciss Tj 100℃ 100 00 VGS 0V f 1MHz Tj 25℃ Coss 0. 0 5 Tj 25℃ 10 00 Crss Tj −25℃ 0 0 5 0 10 0 10 5 20 0 20 5 30 0 10 0 0 4 0 8 0 10 2 10 6 20 0 20 4 D (A) Drain CurrentI Drain-Source Voltage V S D(V) 17 SF150BA50 5 2 Safe Operating Area Pw 10 0μ 1m 10 m D. C. 20 0 10 μ s Forward Voltage of Free Wheeling Diode VGS 0V Pulse Test 12 0 5 2 1 s s s Source Current I(A) S Drain Current ID A) ( 10 6 10 2 8 0 1 0 5 4 0 0 0 2 10 0 Tc 25℃ Non-Repetitive 2 5 11 0 2 5 12 2 0 5 13 0 04 . 06 . 08 . 10 . 12 . 14 . Drain-Source Voltage VDS (V) st Normalized Transient Thermal Impedanser( ) [ jc t( ‐ ) θ‐ /Rhjc ] Source-Drain Voltage VSDS (V) Thermal Impedance θ - (℃/W) jc 5 2 Transient Thermal Impedance 50ms−10s 2 Normalized Transient Thermal Impedanse Vs. Pulse Width Max. Max. 1 -1 0 5 D 1 -1 0 5 50μs−50ms 0.5 2 0.2 0.1 0.05 0.02 0.01 0 2 1 -2 0 5 2 1 -2 0 5 5 μ10 0 μ 50 1 0 0 μ2 0 0μ m 2 m 5 m1 0 0 m 5 0 1 2 0 0 m2 0 0m 5 1m 2m m0 0 51 0 5m 0 5 μ 0 μ5 0 1 0 10 0 μ m 5 1 m 5 m0 m5 0 1 m 0 010 0 m 51 0 Pulse Width PW (sec) Timet (sec) 18 MOSFET MODULE SF100CB100 SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current with a fast recovery diode(trr≦300ns)reverse connected. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ● ID=100A, UL;E76102 M) ( 108max 93±0.5 D S 4ーφ6.5 VDSS=1000V ● Suitable for high speed switching applications. ● Low ON resistance. ● Wide Safe Operating Areas. ● trr≦300ns fast recovery diode for free wheel (Applications) S G 24.0 2ーM6 2ーM4 21.0 29.0 36.0max S D ■Maximum Ratings Symbol VDSS VGSS ID IDP -ID PT Tj Tstg VISO Item Drain-Source Voltage Gate-Source Voltage Drain Current Source Current Total Power Dissipation Channel Temperature Storage Temperature Isolation Voltage(R.M.S.) Mounting Torque Mass Mounting M6) ( Terminal(M6) Terminal(M4) A.C. 1minute Recommended Value 2.5-3.9(25-40) Recommended Value 2.5-3.9(25-40) Recommended Value 1.0-1.4(10-14) Typical Value Tc=25℃ DC Pulse Conditions Unit:A (Tj=25℃ unless otherwise specified) 25.5max Ratings SF100CB100 1000 ±30 100 200 100 800 −40 to +150 −40 to +125 2500 4.7(48) 4.7(48) 1.5(15) 460 Ratings Min. Typ. Max. ±0.1 4.0 1000 1.5 3.5 150 15 30 50 16000 2900 1800 19200 4200 2600 150 300 600 300 1.8 300 0.16 0.64 Unit V V A A W ℃ ℃ V N・m (kgf・B) g ■Electrical Characteristics Symbol IGSS IDSS ( DSS V BR) ( VGS th) ( RDS on) ( VDS on) (Tj=25℃ unless otherwise specified) Conditions VGS=±20V,VDS=0V VGS=0V,VDS=800V VGS=0V,ID=1mA VDS=VGS,ID=10mA ID=100A,VGS=15V ID=100A,VGS=15V VDS=10A,VD=75A VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz VGS=0V,VDS=25V,f=1.0MHz RL=6Ω,VGS=15V/−5V ID=100A,RG=2.2Ω −ID=100A,VGS=0V −ID=100A,VGS=15V,di/dt=400A/ s μ MOSFET Diode Unit μA mA V V mΩ V S pF pF pF Item Gate Leakage Current Zero Gate Voltage Drain Current Darin-Source Breakdown Voltage Gate-Source Threshold Voltage Drain-Source On-State Resistance Drain-Source On-State Voltage Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Switching Time Rise Time Turn-off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time gfs Ciss Coss Crss td on) ( tr td off) ( tf VSDS trr ns ns ℃/W 19 Rth j-c) Thermal Resistance ( 41.5max 48±0.5 63max 20.0 V SF100CB100 10 4 10 2 Output Characteristics Typical Tj 25℃ Pulse Test 15V 10V 8V 10 0 8 0 Forward Transfer Characteristics Typical VDS 50V Pulse Test Drain Current ID A) ( Drain Current ID A) ( 10 0 8 0 6 0 Tj 25℃ Tj 100℃ 6V 6 0 4 0 5V 4 0 2 0 VGS 2 0 0 0 4V 0 0 2 4 6 8 1 0 1 2 1 4 1 6 1 8 2 0 1 2 3 4 5 6 7 Drain-Source Voltage VDS(V) Drain-Source On-State Resistance R S o ) D( n(Ω) Gate-Source Voltage VGS(V) Forward Transconductance gs f (S) 20 0 10 0 5 0 Forward Transconductance Vs. Drain Current Drain-Source On-State Resistance Vs. Channel Temperature 03 . Typical VGS 15V Pulse Test ID 100A ID 50A Tj 25℃ 100℃ 02 . Tj 2 0 1 0 5 05 . Typical VDS 50V Pulse Test 01 . 1 2 5 1 0 2 0 5 0 10 20 0 0 0 0 2 0 4 0 6 0 8 0 10 0 10 2 10 4 10 6 Drain-Source On-State Resistance R S o ) D( n(Ω) Drain Current ID(A) Channel Temperature Tj(℃) 0. 2 0 Drain-Source On-State Resistance Vs. Drain Current 105 5 Input Capacitance, Output Capacitance, Reverse Transfer Capacitance (Typical) Capacitance C P ) (F 0. 1 5 10V VGS 2 104 5 2 13 0 5 VGS 0V f 1MHz Tj 25℃ (Typical) Ciss 15V Coss 0. 1 0 Typical Tj 25℃ Pulse Test Crss 0. 0 5 1 2 5 1 0 2 0 5 0 10 20 0 0 50 0 1 -1 0 2 5 10 0 2 5 11 0 2 5 12 0 Drain Current ID(A) Drain-Source Voltage VDS(V) 1 5 Input Charge Drain Current ID A) ( Typical ID 100A Tj 25℃ Safe Operating Area 2 102 5 2 101 5 2 10 0 5 Tc 25℃ Non-Repetitive Pw Pw D.C Pw Pw Gate-Source Voltage VGS (V) 1 0 50μ s 10 0μ s VDD 250V VDD 400V 1m s 10 ms . 5 0 0 50 0 10 00 10 50 2 5 11 0 2 5 12 0 2 5 13 0 Gate Charge Q ( C) gn Drain-Source Voltage VDS(V) 20 SF100CB100 Reverse Drain Current ーID A) ( 30 0 Reverse Recovery Time t r r (ns) Reverse Recovery CurrentI (A) r r Reverse Recovery Charge Q r μ r C) ( Forward Voltage of Free Wheeling Diode 12 0 5 2 11 0 5 2 10 0 5 Reverse Recovery Characteristics lrr lrr Qrr 20 0 Tj 125℃ Qrr Typical dis/dt 100A/μs VGS −5V trr trr Tj Tj Tj 25℃ Typical VGS 0V Pulse Test 10 0 2 1 -1 0 5 0 5 0 10 0 25℃ 150℃ 0 0 10 . 20 . 30 . 10 5 Source-Drain Voltage VSDS (V) Source CurrentI S (A) Thermal Impedance θ -C j (℃/W) 10 00 Switching Characteristics 5 2 Transient Thermal Impedance (MO F T) SE 50msec∼10sec Max. Max. Switching Timet n ) (s 50 0 td(off) 1 -1 0 50μsec∼50msec 20 0 10 0 tf tr td(on) 5 2 5 0 2 0 Tj 25℃ VGS +15V −5V VDD 600V Pw 50μs RG 2.2Ω 1 -2 0 5 2 5 1 0 2 0 5 0 10 0 20 0 D (A) Drain CurrentI 5 μ 0 μ2 0 5 0 1 2 0 10 0 μ 0 μ m m 5 m 0 m2 0 0 m 1 2 0 1 0 0 m5 0 5 1 m2 m 5 m m0 0 0 51 0 Timet (sec) Thermal Impedance θ -C j (℃/W) 10 0 5 50μsec∼50msec Transient Thermal Impedance I D (D O E) 50msec∼10sec Max. Max. 2 1 -1 0 5 2 1 -2 0 5 2 5 μ 0 μ2 0 5 0 1 2 0 10 0 μ 0 μ m m 5 m 0 m2 0 0 m 1 2 0 1 0 0 m5 0 5 1 m2 m 5 m m0 0 0 51 0 Timet (sec) 21
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