M7615

一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. PIR CONTROLLER M7615 DC PIR CONTROLLER GENERAL DESCRIPTION 功能敘述 The M7615 is a low power PIR ( passive infra-red ) controller with hi level output , paired with M3766 for battery power door bell/ relay /alarm application. With special noise immunity technique , M7615 is the most stable PIR controller you can find on the market. More than this , there are few components needed in its application circuit which can reduce material cost and increase competitive. FEATURES 產品特長 • High noise immunity. • Low stand-by current < 90uA • Drive either Relay. • Adjustable play on duration and latch duration. • On-chip voltage regulator. • 20 second warm-up. • CDS input conditionally. • 14 pin DIP or SOP package. APPLICATIONS 產品應用 • PIR light controller , Motion Detector , Alarm system , Auto-door bell. PIN ASSIGNMENT M7615-P14 VDD 1 14 RELAY UOU1 II1 TE VSS CDS RTX 7 8 NII1 II2 UOU2 RT1 1/7 2005-08-01 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. PIR CONTROLLER M7615 DC PIR CONTROLLER PIN DESCRIPTION Pin Name VDD TE VSS CDS I I I/O Description Operation voltage：5V，Stand by current：80~90uA TE = 1MΩ System ground. Connect to a CDS for inhibit , when Vinhi = 0 disable ,Vinhi = 1 enable trigger Delay timer oscillator input The delay time of receiving PIR signal to trigger Encoder or a high signal to trigger relay. The range for：RTX=2 KΩ ~ 5 MΩ CTX=100P~0.01UF FOR 100P or 0.01uf delay time=45000 R*C FOR 1000P delay time=35000 R*C Delay Time：20 ms ~ 2250s Ex：CTX=100p，RTX=680KΩ，Delay Time=3.1s CTX=1000p，RTX=100KΩ，Delay Time=3.5s CTX=0.01uf，RTX=10KΩ，Delay Time=4.5s Latch timer oscillator input The latch time of the range for：RTI=100 KΩ ~ 1 MΩ CTI=0.1UF(fix) Contain Time=35 R*C Contain time：> 0.5s ~ Ex：CTI=0.1uf，RTI=1MΩ，Contain Time=3.5s 2 nd stage OP amp output. 2 stage OP amp negative input. 1 stage OP amp positive input. 1 stage OP amp negative input. To drive relay，active high. 1st stage OP amp output. st st nd Pin No. 1 4 5 6 RTX I 7 RTI I 8 UOU2 II2 NII1 II1 RELAY UOU1 O I I I O I 9 10 11 12 13 14 Delay timing and Latch timing oscillator input pin, connect to external RC to obtain desired delay duration. Variable delay(latch) duration can be obtained by selecting various values of RC or using a variable resistor. 2/7 2005-08-01 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. PIR CONTROLLER M7615 DC PIR CONTROLLER RD CD Fig.1 Timing Oscillator The PIR signal amplifier needs a warm up period after power-on, so during this time the input should be disabled OP1O OP1P OP1N OP2O OP2N OP2P VCN OP2 OP1 comparator VCP Fig.2 PIR Amplifier Block Diagram TIMING RELATIONSHIP： 0.7 VDD Signal on UOU2 Pin 0.5 VDD 0.3 VDD Window detector Pulse width detector RELAY T T1 T2 T1：Delay Time T2：Latch ( Contain )Time T：Warm Up Time (≦20s ) BLOCK DIAGRAM 3/7 2005-08-01 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. PIR CONTROLLER M7615 DC PIR CONTROLLER M7615 VDD TE RTI OSC LATCH TIMMER VDD RELAY CONTROL RTX OSC VDD DELAY TIMMER LOGIC CDS CDS VDD 0.3VDD WINDOW DETECTOR + REF. VOLTAGE 0.7VDD + PULSE WIDTH DETECTOR 0.5VDD NII1 PIR + + II1 UOU1 NII2 II2 UOU2 ABSOLUTE MAXIMUM RATING Parameter Sym. 4/7 Rating Unit 2005-08-01 (TA=25℃) 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. PIR CONTROLLER M7615 DC PIR CONTROLLER Power Supply VDD With Respect to VSS Voltage On Any Pin Operating Temperature Storage Temperature VDD - VSS Top 5.6 -0.3 to 5.6 -20 to 70 -65 to 150 V V ℃ ℃ ELECTRICAL CHARACTERISTICS Characteristics Supply Voltage Stand by Current Operating Current Stable Voltage Source Current of VREF Ripple of VREF Input and Output Regulation of VREF Time Delay Frequency Time Latch Frequency CDS Operating Trigger CDS Operating Trigger CDS Source Current CDS Output Source Current CDS Output Sink Current Relay Source Current Relay Sink Current Relay Operating Voltage Sym. VDD IST IDD VREF IREF Min. 4.2 — 1.8 2.1 200 — — 15 15 1.3 0.6 2.6 9 11.6 — — 13.1 Typ. 5 — — 2.5 — — — 16 16 1.7 0.9 3.5 10.4 13 — — — Max. 5.5 100 2.5 2.75 — 0.5 0.3% 17 17 2.1 1.1 4.4 17.4 21 10 10 18.8 Unit V uA mA V uA mV KHz Hz V V uA mA mA mA mA V Conditions VDD > 4.2V FRTX FRTI VT + V TICDS ISOURCE ISINK IRS IRSINK VRO For Delay 3s For Contain 3s 5/7 2005-08-01 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. PIR CONTROLLER M7615 DC PIR CONTROLLER APPLICATION DIAGRAM 參考電路圖 (A) VDD M7615P RELAY 1 14 UOU1 C1 R1 R6 R4 C4 PIR R II1 TE R5 VSS UOU2 CDS CDS RTX 7 8 RTI NII1 II2 VDD R2 C2 C5 R3 C3 C1 C2 C3 C4 C5 R 0.033uF 0.033uF 33uF/16V 0.01uF 33uF/16V 1MΩ R1 R2 R3 R4 R5 R6 820KΩ 820KΩ 15KΩ 15KΩ 680KΩ 47 KΩ VDD VDD1 1K VDD 5.1V 10μ/ 50V 2.2K 12V M3766 Z 1 16 LO VDD1 Rz K6 X K5 Y K4 BB K3 BZ K2 100Ω K1 VSS 8 9 POR 882 100Ω 882 600Ω 945 Rosc 772 BUZZER 945 772 *ALARM：M3766 6/7 2005-08-01 一華半導體股份有限公司 MOSDESIGN SEMICONDUCTOR CORP. PIR CONTROLLER M7615 DC PIR CONTROLLER (B) VDD 4002 VDD LOAD M7615P RELAY 1 14 UOU1 R6 945 C1 R1 R7 R4 C4 PIR R II1 TE R5 VSS CDS CDS RTX 7 8 RTI NII1 II2 UOU2 VDD R2 C2 C5 R3 C3 C1 C2 C3 C4 C5 R 0.033uF 0.033uF 33uF/16V 0.01uF 33uF/16V 1MΩ R1 R2 R3 R4 R5 R6 R7 820KΩ 820KΩ 15KΩ 15KΩ 680KΩ 22 KΩ 47 KΩ * All specs and applications shown above subject to change without prior notice. (以上電路及規格僅供參考,本公司得逕行修正) 7/7 2005-08-01