BUK7615-100A

Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET GENERAL DESCRIPTION N-channel enhancement mode standard level field-effect power transistor in a plastic envelope suitable for surface mounting. Using ’trench’ technology the device features very low on-state resistance. It is intended for use in automotive and general purpose switching applications. BUK7615-100A QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 10 V MAX. 100 75 230 175 15 UNIT V A W ˚C mΩ PINNING - SOT404 PIN 1 2 3 mb gate drain (no connection possible) source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g 2 1 3 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR ±VGS ID ID IDM Ptot Tstg, Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage & operating temperature CONDITIONS RGS = 20 kΩ Tmb = 25 ˚C Tmb = 100 ˚C Tmb = 25 ˚C Tmb = 25 ˚C MIN. - 55 MAX. 100 100 20 75 53 240 230 175 UNIT V V V A A A W ˚C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS Minimum footprint, FR4 board TYP. 50 MAX. 0.65 UNIT K/W K/W January 1999 1 Rev 1.000 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET STATIC CHARACTERISTICS Tj= 25˚C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA; Tj = -55˚C VDS = VGS; ID = 1 mA Tj = 175˚C Tj = -55˚C VDS = 100 V; VGS = 0 V; VGS = ±20 V; VDS = 0 V VGS = 10 V; ID = 25 A Tj = 175˚C Tj = 175˚C MIN. 100 89 2 1 - BUK7615-100A TYP. 3.0 0.05 2 12.0 - MAX. 4.0 4.4 10 500 100 15.0 40.5 UNIT V V V V V µA µA nA mΩ mΩ DYNAMIC CHARACTERISTICS Tmb = 25˚C unless otherwise specified SYMBOL Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VGS = 0 V; VDS = 25 V; f = 1 MHz MIN. TYP. 4500 550 305 35 85 150 70 2.5 7.5 MAX. 6000 660 400 55 125 225 100 UNIT pF pF pF ns ns ns ns nH nH VDD = 30 V; Rload =1.2Ω; VGS = 10 V; RG = 10 Ω Measured from upper edge of drain tab to centre of die Measured from source lead soldering point to source bond pad REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Tj = 25˚C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS MIN. IF = 25 A; VGS = 0 V IF = 75 A; VGS = 0 V IF = 75 A; -dIF/dt = 100 A/µs; VGS = -10 V; VR = 30 V TYP. 0.85 1.1 80 0.35 MAX. 75 240 1.2 UNIT A A V V ns µC AVALANCHE LIMITING VALUE SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 35 A; VDD ≤ 25 V; VGS = 10 V; RGS = 50 Ω; Tmb = 25 ˚C MIN. TYP. MAX. 120 UNIT mJ January 1999 2 Rev 1.000 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET BUK7615-100A 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating 1 D= 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0 Zth / (K/W) P D tp D= tp T t T 0 20 40 60 80 100 Tmb / C 120 140 160 180 0.001 0.00001 0.001 t/S 0.1 10 Fig.1. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f(Tmb) ID% Normalised Current Derating Fig.4. Transient thermal impedance. Zth j-mb = f(t); parameter D = tp/T 300 ID/A 250 VGS\V = 120 110 100 90 80 70 60 50 40 30 20 10 0 20.0 10.0 9.0 8.0 7.5 7.0 6.5 6.0 5.5 5.0 4.5 200 150 100 50 0 20 40 60 80 100 Tmb / C 120 140 160 180 0 0 2 4 VDS/V 6 8 10 Fig.2. Normalised continuous drain current. ID% = 100⋅ID/ID 25 ˚C = f(Tmb); conditions: VGS ≥ 5 V 1000 ID/A RDS(ON) = VDS/ID 100 Fig.5. Typical output characteristics, Tj = 25 ˚C. ID = f(VDS); parameter VGS RDS(ON)/mOhm 20 tp = 1uS 100uS 1mS 19 18 17 VGS/V = 16 15 10 DC 10mS 100mS 14 13 12 5.5 6.0 6.5 7.0 8.0 10.0 0 20 40 ID/A 60 80 100 1 1 10 VDS/V 100 11 Fig.3. Safe operating area. Tmb = 25 ˚C ID & IDM = f(VDS); IDM single pulse; parameter tp Fig.6. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(ID); parameter VGS January 1999 3 Rev 1.000 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET BUK7615-100A 16 RDS(ON)/mOhm 3 a Rds(on) normalised to 25degC 15 2.5 14 2 13 1.5 12 1 11 0.5 -100 -50 0 50 100 Tmb / degC 150 200 10 5 10 VGS/V 15 20 Fig.7. Typical on-state resistance, Tj = 25 ˚C. RDS(ON) = f(VGS); conditions ID = 25 A; 100 ID/A Fig.10. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 ˚C = f(Tj); ID = 25 A; VGS = 5 V VGS(TO) / V max. BUK759-60 5 80 4 typ. 60 3 min. 40 Tj/C = 20 175 25 2 1 0 0 1 2 3 VGS/V 4 5 6 7 0 -100 -50 0 50 Tj / C 100 150 200 Fig.8. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj 90 gfs/S 80 70 60 50 40 30 20 10 0 0 20 40 ID/A 60 80 100 Fig.11. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS Sub-Threshold Conduction 1E-01 1E-02 2% typ 98% 1E-03 1E-04 1E-05 1E-06 0 1 2 3 4 5 Fig.9. Typical transconductance, Tj = 25 ˚C. gfs = f(ID); conditions: VDS = 25 V Fig.12. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 ˚C; VDS = VGS January 1999 4 Rev 1.000 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET BUK7615-100A 11 10 9 8 120 110 100 90 80 70 60 Ciss WDSS% Thousands pF 7 6 5 4 3 2 1 0 0.01 0.1 1 VDS/V 10 Coss Crss 100 50 40 30 20 10 0 20 40 60 80 100 120 Tmb / C 140 160 180 Fig.13. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz 12 VGS/V 10 Fig.16. Normalised avalanche energy rating. WDSS% = f(Tmb); conditions: ID = 75 A + L VDS = 14V 80V VDD 8 VDS VGS 0 RGS T.U.T. R 01 shunt 6 -ID/100 4 2 0 0 20 40 60 QG/nC 80 100 120 Fig.14. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 25 A; parameter VDS 100 ID/A 80 Fig.17. Avalanche energy test circuit. 2 WDSS = 0.5 ⋅ LID ⋅ BVDSS /(BVDSS − VDD ) + RD VDS Tj/C = 175 25 VDD 60 VGS 0 RG T.U.T. - 40 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 VSDS/V 0.8 0.9 1 1.1 Fig.15. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj Fig.18. Switching test circuit. January 1999 5 Rev 1.000 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET MECHANICAL DATA Plastic single-ended package (Philips version of D2-PAK); 2 leads BUK7615-100A SOT404 A E A1 D1 D HD Lp b e e c Q 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D 9.65 8.65 D1 1.6 1.2 E 10.3 9.7 e 2.54 Lp 2.9 2.1 HD 15.4 14.8 Q 2.60 2.20 OUTLINE VERSION SOT404 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-16 Fig.19. SOT404 surface mounting package. Centre pin connected to mounting base. Notes 1. This product is supplied in anti-static packaging. The gate-source input must be protected against static discharge during transport or handling. 2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18. 3. Epoxy meets UL94 V0 at 1/8". January 1999 6 Rev 1.000 Philips Semiconductors Product specification TrenchMOS™ transistor Standard level FET MOUNTING INSTRUCTIONS Dimensions in mm 11.5 BUK7615-100A 9.0 17.5 2.0 3.8 5.08 Fig.20. SOT404 : soldering pattern for surface mounting. DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. © Philips Electronics N.V. 1999 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1999 7 Rev 1.000