1MBI600UB-120

1MBI600UB-120 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 1200V / 600A 1 in one-package Equivalent Circuit Schematic Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltage Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso C onditions Rating 1200 ±20 800 600 1600 1200 600 1200 3570 +150 -40 to +125 2500 4.5 11.0 1.7 Unit V V A Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C 1ms 1 device Collector Power Dissipation Junction temperature Storage temperature AC:1min. Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 Terminals *2 *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 3.5 to 4.5N·m(M6), Terminal 10.0 to 11.0 N·m(M8), 1.3 to 1.7 N·m(M4) W °C VAC N·m Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=600mA VGE=15V, IC=600A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =600V IC=600A VGE=±15V RG= 1.1 Ω VGE=0V IF=600A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 4.5 6.5 – 1.95 – 2.20 – 1.75 – 2.00 – 67 – 0.36 – 0.21 – 0.03 – 0.37 – 0.07 – 1.80 – 1.90 – 1.60 – 1.70 – – – 0.30 Unit Max. 8.0 1600 8.5 2.30 – 2.10 – – 1.20 0.60 – 1.00 0.30 2.10 – 1.90 – 0.35 – mA nA V V Input capacitance Turn-on time nF µs Turn-off time Forward on voltage V Reverse recovery time Lead resistance, terminal-chip*3 IF=600A µs mΩ *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.0063 Unit Max. 0.035 0.054 – °C/W °C/W °C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 1MBI600UB-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 1400 1200 Collector current : Ic [A] 1000 800 10V 600 400 200 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] VGE=20 15V 12V 1400 1200 Collector current : Ic [A] 1000 800 600 400 200 0 0 1 2 3 VGE=20V 15V IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip 12V 10V 8V 8V 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 1400 Tj=25°C Collector - Emitter voltage : VCE [ V ] 1200 Collector current : Ic [A] 1000 Tj=125°C 800 600 400 200 0 0 1 2 3 4 5 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip 10 8 6 4 Ic=1200A Ic= 600A Ic= 300A 2 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25°C 100.0 Capacitance : Cies, Coes, Cres [ nF ] Cies Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=600V, Ic=600A, Tj= 25°C VGE 10.0 Cres Coes VCE 1.0 0 10 20 30 0 0 500 1000 1500 2000 2500 3000 3500 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 1MBI600UB-120 IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.1Ω, Tj= 25°C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.1Ω, Tj=125°C 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 0 200 400 600 800 1000 1200 Collector current : Ic [ A ] 10 0 200 400 600 800 1000 1200 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=600A, VGE=±15V, Tj= 25°C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] 120 100 80 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=1.1Ω Eoff(125°C) ton toff 1000 Eoff(25°C) 60 40 20 0 Err(125°C) Eon(125°C) Err(25°C) Eon(25°C) tr 100 tf 10 0.1 1.0 10.0 100.0 0 200 400 600 800 1000 1200 Gate resistance : Rg [ Ω ] Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=600A, VGE=±15V, Tj= 125°C 400 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Reverse bias safe operating area (max.) +VGE=15V,-VGE = 1.1Ω ,Tj