2MBI200UD-120

2MBI200UD-120 IGBT Module U-Series Features · High speed switching · Voltage drive · Low inductance module structure 1200V / 200A 2 in one-package Equivalent Circuit Schematic C1 E2 Applications · Inverter for Motor drive · AC and DC Servo drive amplifier · Uninterruptible power supply · Industrial machines, such as Welding machines C2E1 G1 E1 G2 E2 Maximum ratings and characteristics Absolute maximum ratings (at Tc=25°C unless otherwise specified) Item Collector-Emitter voltage Gate-Emitter voltaga Collector current Symbol VCES VGES IC ICp -IC -IC pulse PC Tj Tstg Viso C onditions Continuous Tc=25°C Tc=80°C 1ms Tc=25°C Tc=80°C Collector Power Dissipation Junction temperature Storage temperature Isolation voltage between terminal and copper base *1 Screw Torque Mounting *2 Terminals *2 1 device AC:1min. Rating 1200 ±20 300 200 600 400 200 400 1040 +150 -40 to +125 2500 3.5 4.5 Unit V V A W °C VAC N·m *1 : All terminals should be connected together when isolation test will be done. *2 : Recommendable value : Mounting 2.5 to 3.5 N·m(M5 or M6), Terminals 3.5 to 4.5N·m(M6) Electrical characteristics (at Tj=25°C unless otherwise specified) Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Symbols ICES IGES VGE(th) VCE(sat) (terminal) VCE(sat) (chip) Cies ton tr tr(i) toff tf VF (terminal) VF (chip) t rr R lead Conditions VGE=0V, VCE=1200V VCE=0V, VGE=±20V VCE=20V, IC=200mA VGE=15V, IC=200A Tj=25°C Tj=125°C Tj=25°C Tj=125°C VCE=10V, VGE=0V, f=1MHz VCC =600V IC=200A VGE=±15V RG=3 Ω VGE=0V IF=200A Tj=25°C Tj=125°C Tj=25°C Tj=125°C Characteristics Min. Typ. – – – – 4.5 6.5 – 1.85 – 2.10 – 1.75 – 2.00 – 22 – 0.36 – 0.21 – 0.03 – 0.37 – 0.07 – 1.70 – 1.80 – 1.60 – 1.70 – – – 0.52 Unit Max. 2.0 400 8.5 2.20 – 2.10 – – 1.20 0.60 – 1.00 0.30 2.00 – 1.90 – 0.35 – mA nA V V Input capacitance Turn-on time nF µs Turn-off time Forward on voltage V Reverse recovery time Lead resistance, terminal-chip*3 IF=200A µs mΩ *3:Biggest internal terminal resistance among arm. Thermal resistance characteristics Items Thermal resistance Contact Thermal resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f)*4 Conditions IGBT FWD With thermal compound Characteristics Min. Typ. – – – – – 0.025 Unit Max. 0.12 0.20 – °C/W °C/W °C/W *4 : This is the value which is defined mounting on the additional cooling fin with thermal compound. 2MBI200UD-120 Characteristics (Representative) Collector current vs. Collector-Emitter voltage (typ.) Tj= 25°C / chip 500 VGE=20V 15V 12V 400 Collector current : Ic [A] Collector current : Ic [A] 400 500 IGBT Module Collector current vs. Collector-Emitter voltage (typ.) Tj= 125°C / chip VGE=20V 15V 12V 300 10V 300 200 200 10V 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] 100 8V 0 0 1 2 3 4 5 Collector-Emitter voltage : VCE [V] Collector current vs. Collector-Emitter voltage (typ.) VGE=15V / chip 500 T j=25°C 400 Collector current : Ic [A] T j=125°C 10 Collector-Emitter voltage vs. Gate-Emitter voltage (typ.) Tj=25°C / chip Collector - Emitter voltage : VCE [ V ] 8 300 6 200 4 100 2 Ic=400A Ic=200A Ic=100A 0 0 1 2 3 4 5 0 5 10 15 20 25 Collector-Emitter voltage : VCE [V] Gate - Emitter voltage : VGE [ V ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1M Hz, Tj= 25°C 100.0 Cies Collector-Emitter voltage : VCE [ 200V/div ] Gate - Emitter voltage : VGE [ 5V/div ] Dynamic Gate charge (typ.) Vcc=600V, Ic=200A, Tj= 25°C Capacitance : Cies, Coes, Cres [ nF ] 10.0 Cres VGE 1.0 Coes VCE 0 300 600 900 1200 0.1 0 10 20 30 Collector-Emitter voltage : VCE [V] Gate charge : Qg [ nC ] 2MBI200UD-120 Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω, Tj= 25°C 10000 Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] 10000 IGBT Module Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω, Tj=125°C 1000 ton toff tr 100 tf 1000 toff ton tr 100 tf 10 0 100 200 300 400 Collector current : Ic [ A ] 10 0 100 200 300 400 Collector current : Ic [ A ] Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C 10000 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Switching time : ton, tr, toff, tf [ nsec ] ton toff 1000 40 Switching loss vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg=3Ω Eoff(125°C) Eon(125°C) 30 Eoff(25°C) 20 Eon(25°C) tr 100 tf 10 Err(125°C) Err(25°C) 10 1.0 10.0 Gate resistance : Rg [ Ω ] 100.0 0 0 100 200 300 400 Collector current : Ic [ A ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj= 125°C 150 Switching loss : Eon, Eoff, Err [ mJ/pulse ] Eon 500 100 Collector current : Ic [ A ] 400 300 200 100 Err 0 1.0 10.0 Gate resistance : Rg [ Ω ] 100.0 0 600 Reverse bias safe operating area (max.) +VGE=15V,-VGE = 3Ω ,Tj