1MBI200N-120

IGBT MODULE ( N series ) n Features • Square RBSOA • Low Saturation Voltage • Less Total Power Dissipation • Improved FWD Characteristic • Minimized Internal Stray Inductance • Overcurrent Limiting Function (4~5 Times Rated Current) n Outline Drawing n Applications • High Power Switching • A.C. Motor Controls • D.C. Motor Controls • Uninterruptible Power Supply n Maximum Ratings and Characteristics • Absolute Maximum Ratings Items Collector-Emitter Voltage Gate -Emitter Voltage Collector Current Max. Power Dissipation Operating Temperature Storage Temperature Isolation Voltage Screw Torque ( Tc=25°C) Symbols VCES VGES Continuous IC 1ms IC PULSE Continuous -IC 1ms -IC PULSE PC Tj Tstg A.C. 1min. Vis Mounting *1 Terminals *2 Terminals *3 Ratings 1200 ± 20 200 400 200 400 1500 +150 -40 ∼ +125 2500 3.5 4.5 1.7 Units V V A W °C °C V Nm n Equivalent Circuit Note: *1:Recommendable Value; 2.5 ∼ 3.5 Nm (M5) or (M6) *2:Recommendable Value; 3.5 ∼ 4.5 Nm (M6) *3:Recommendable Value; 1.3 ∼ 1.7 Nm (M4) • Electrical Characteristics Items Zero Gate Voltage Collector Current Gate-Emitter Leackage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Input capacitance Output capacitance Reverse Transfer capacitance Turn-on Time Turn-off Time Diode Forward On-Voltage Reverse Recovery Time ( at Tj=25°C ) Symbols ICES IGES VGE(th) VCE(sat) Cies Coes Cres tON tr tOFF tf VF trr Test Conditions VGE=0V VCE=1200V VCE=0V VGE=± 20V VGE=20V IC=200mA VGE=15V IC=200A VGE=0V VCE=10V f=1MHz VCC=600V IC=200A VGE=± 15V RG=4.7Ω IF=200A VGE=0V IF=200A Min. Typ. Max. 4.0 60 7.5 3.3 Units mA µA V V pF 1.2 0.6 1.5 0.5 3.0 350 4.5 32000 11600 10320 0.65 0.25 0.85 0.35 µs V ns • Thermal Characteristics Items Thermal Resistance Symbols Rth(j-c) Rth(j-c) Rth(c-f) Test Conditions IGBT Diode With Thermal Compound Min. Typ. Max. 0.085 0.22 Units °C/W 0.0125 Collector current vs. Collector-Emitter voltage T j=25°C 500 V GE = 20V, 15V, 12V, 10V 400 400 C Collector current vs. Collector-Emitter voltage T j=125°C 500 V GE = 20V, 15V, 12V, 10V, [A] Collector current : I C 200 Collector current : I 300 [A] 300 200 8V 100 8V 100 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [ V] 0 0 1 2 3 4 5 Collector-Emitter voltage : V CE [ V] Collector-Emitter vs. Gate-Emitter voltage T j=25°C 10 10 CE Collector-Emitter vs. Gate-Emitter voltage T j=125°C [V] CE 8 [V] 8 Collector-Emitter voltage : V 6 Collector-Emitter voltage : V 6 4 IC= 400A 200A 100A 4 IC= 400A 200A 100A 2 2 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] 0 0 5 10 15 20 25 Gate-Emitter voltage : V GE [ V] Switching time vs. Collector current V CC =600V, R G =4.7 Ω , V GE =±15V, T j=25°C 1000 t off t on tf tr 1000 Switching time vs. Collector current V CC =600V, R G =4.7 Ω , V GE =±15V, Tj=125°C t off t on tf tr , t r , t off , t f [nsec] on on 100 , t r , t off , t f [nsec] 100 Switching time : t Switching time : t 10 0 100 200 300 400 Collector current : I C [ A] 10 0 100 200 300 400 Collector current : I C [ A] Switching time vs. R G V CC =600V, I C =200A, V GE =±15V, T j=25°C 1000 t off t on 1000 tr tf Dynamic input characteristics T j=25°C 25 V CC =400V 600V 800 800V 20 , t r , t off , t f [nsec] Collector-Emitter voltage : V CE [V] 600 15 Switching time : t on 400 10 200 100 5 0 10 Gate resistance : R G [ Ω ] 0 500 1000 1500 2000 Gate charge : Q G [ nC] 0 2500 Forward current vs. Forward voltage V GE = O V 500 T j=125°C 400 25°C Reverse recovery characteristics t rr , I rr v s. I F rr [nsec] F [A] Reverse recovery current : I rr [A] t rr 1 25°C Forward current : I 300 I rr 1 25°C t rr 2 5°C I rr 2 5°C 100 200 100 0 0 1 2 3 4 5 0 100 200 Forward current : I F [ A] 300 400 Forward voltage : V F [ V] Reverse recovery time :t Reversed biased safe operating area Transient thermal resistance 2000 Diode +V GE =15V, -V GE < 15V, T j< 125°C, R G > 4.7 Ω [°C/W] 1600 C th(j-c) [A] 0,1 IGBT Collector current : I 1200 SCSOA (non-repetitive pulse) Thermal resistance : R 0,01 800 400 RBSOA (Repetitive pulse) 0,001 0 ,001 0 0,01 0,1 1 0 200 400 600 800 1000 1200 Pulse width : PW [sec] Collector-Emitter voltage : V CE [ V] Switching loss vs. Collector current V CC=600V, R G =4.7 Ω , V GE =±15V 60 Capacitance vs. Collector-Emitter voltage T j=25°C ,E off ,E rr [mJ/cycle] 50 E off 1 25°C 40 , C oes , C res [nF] E on 1 25°C 100 E on 2 5°C C ies on 30 E off 2 5°C 20 E rr 1 25°C ies Switching loss : E 10 E rr 2 5°C 0 0 100 200 300 400 C ollector Current : I C [ A] Capacitance : C 10 C oes C res 1 0 5 10 15 20 25 30 35 Collector-Emitter Voltage : V CE [ V] Fuji Electric GmbH Lyoner Straße 26 D-60528 Frankfurt/M Tel.: 069 - 66 90 29 - 0 Fax.: 069 - 66 90 29 - 56 Fuji Electric (UK) Ltd. Commonwealth House 2 Chalkhill Road Hammersmith London W6 8DW, UK Tel.: 0181 - 233 11 30 Fax.: 0181 - 233 11 60 Specification is subject to change without notice May 97