BMT1417B26

BIPOLARICS, INC Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR PRODUCT DATA SHEET FEATURES: • Common Base, Class C Package Configuration • High Output Power 26 W @ 1.4 to 1.7 GHz • High Gain Bandwidth Product f = 6.0 GHz @ IC = 4.16 A t • High Gain GPE = 7.0 dB to 8.2 dB • High Reliability Gold Metallization Nitride Passivation • Diffused Ballast Resistors • BeO Packaging • Built-In Matching Network Absolute Maximum Ratings: SYMBOL PARAMETERS RATING UNITS VCBO VCEO VEBO IC T J Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (instantaneous) Junction Temperature Storage Temperature Thermal Resistance 50 28 3.5 4.16 200 -65 to 200 6.5 V V V A o o for Broadband Operation PERFORMANCE DATA: • Electrical Characteristics (TA = 25oC) SYMBOL PARAMETERS & CONDITIONS VCE =28V, I C =4.16 A, Class C C TSTG C θJC C/W UNIT MIN. TYP. MAX. P1dB Power output at 1 dB compression: f = 1.4 GHz W 26 η hFE Collector Efficiency Class C % 50 Forward Current Transfer Ratio: VCB = 5V, IC = 800 mA 10 --- 100 COB Output Capacitance: f = 1 MHz, I E = 0 pF 24 PT Total Power Dissipation W 52 PAGE 2 BIPOLARICS, INC. Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR PAGE 3 BIPOLARICS, INC. Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR PAGE 4 BIPOLARICS, INC. Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR PAGE 5 BIPOLARICS, INC. Part Number BMT1417B26 SILICON MICROWAVE POWER TRANSISTOR 25 Package: 0.250" 2 Lead Flange NOTES: (unless otherwise specified) in 1. Dimensions are (mm) 2. Tolerances: in .xxx = ± .005 mm .xx = ± .13 3. All dimensions nominal; subject to change without notice LEAD 25 Package 1 Emitter 2 Base 3 Collector 4 Base BIPOLARICS, INC. 602 Charcot Ave. San Jose, CA 95131 Phone: (408) 456-0430 FAX: (408) 456-0431