SI1417EDH-T1-E3

Si1417EDH Vishay Siliconix P-Channel 12 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.085 at VGS = - 4.5 V - 3.3 0.115 at VGS = - 2.5 V - 2.9 0.160 at VGS = - 1.8 V - 2.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.8 V Rated • ESD Protected: 3000 V • Thermally Enhanced SC-70 Package • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switching • PA Switch • Level Switch SOT-363 SC-70 (6-LEADS) D 1 6 D D 3k Marking Code 2 5 G 3 4 D BB XX YY D G Lot Traceability and Date Code S Part # Code Top View S Ordering Information: Si1417EDH-T1-E3 (Lead (Pb)-free) Si1417EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Steady State Drain-Source Voltage VDS - 12 Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C)a TA = 25 °C TA = 85 °C Pulsed Drain Current IS TA = 25 °C TA = 85 °C PD - 3.3 - 2.7 - 1.9 -8 - 1.4 - 0.9 1.56 1.0 0.81 0.52 TJ, Tstg Operating Junction and Storage Temperature Range V - 2.4 IDM Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa ID Unit - 55 to 150 A W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Symbol t≤5s Steady State Steady State RthJA RthJF Typical Maximum 60 80 100 125 34 45 Unit °C/W Notes: a. Surface mounted on 1" x 1" FR4 board. Document Number: 71412 S10-0935-Rev. B, 19-Apr-10 www.vishay.com 1 Si1417EDH Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. VGS(th) VDS = VGS, ID = - 250 µA - 0.45 Typ. Max. Unit VDS = 0 V, VGS = ± 4.5 V ± 1.5 µA VDS = 0 V, VGS = ± 12 V ± 10 mA VDS = - 9.6 V, VGS = 0 V -1 VDS = - 9.6 V, VGS = 0 V, TJ = 85 °C -5 Static Gate Threshold Voltage Gate-Body Leakage IGSS Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 4.5 V -4 VGS = - 4.5 V, ID = - 3.3 A Drain-Source On-State Resistancea RDS(on) Forward Transconductancea Diode Forward Voltagea V µA A 0.070 0.085 VGS = - 2.5 V, ID = - 2.9 A 0.095 0.115 VGS = - 1.8 V, ID = - 1.0 A 0.133 0.160 gfs VDS = - 10 V, ID = - 3.3 A 8 VSD IS = - 1.4 A, VGS = 0 V - 0.80 - 1.1 5.8 8 Ω S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs VDS = - 6 V, VGS = - 4.5 V, ID = - 3.3 A 1.3 nC Gate-Drain Charge Qgd 1.5 Turn-On Delay Time td(on) 0.60 1.0 1.4 2.1 4.9 7.5 4.9 7.5 Rise Time VDD = - 6 V, RL = 6 Ω ID ≅ - 1 A, VGEN = - 4.5 V, Rg = 6 Ω tr Turn-Off Delay Time td(off) Fall Time tf µs Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 10 000 8 IGSS - Gate Current (µA) IGSS - Gate Current (mA) 1000 6 4 2 100 10 TJ = 150 °C 1 TJ = 25 °C 0.1 0 0.01 0 www.vishay.com 2 3 6 9 12 15 18 0 3 6 9 VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) Gate-Current vs. Gate-Source Voltage Gate-Current vs. Gate-Source Voltage 12 Document Number: 71412 S10-0935-Rev. B, 19-Apr-10 Si1417EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 8 8 VGS = 5 V thru 2.5 V TC = - 55 °C 2V 6 ID - Drain Current (A) ID - Drain Current (A) 6 4 1.5 V 2 25 °C 125 °C 4 2 1V 0 0 1 2 3 4 0 0.0 5 Transfer Characteristics 1000 C - Capacitance (pF) RDS(on) - On-Resistance (Ω) 2.5 1200 0.2 VGS = 1.8 V VGS = 2.5 V Ciss 800 600 400 Coss 0.1 200 Crss VGS = 4.5 V 0 1.5 3.0 4.5 6.0 7.5 0 2 4 6 8 10 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) On-Resistance vs. Drain Current Capacitance 12 1.6 5 VDS = 6 V ID = - 3.3 A 1.4 RDS(on) - On-Resistance (Normalized) VGS - Gate-to-Source Voltage (V) 2.0 Output Characteristics 0.3 3 2 VGS = 4.5 V ID = - 3.3 A 1.2 1.0 0.8 1 0 0.0 1.5 VGS - Gate-to-Source Voltage (V) 0.4 4 1.0 VDS - Drain-to-Source Voltage (V) 0.5 0.0 0.0 0.5 1.5 3.0 4.5 6.0 7.5 0.6 - 50 - 25 0 25 50 75 100 125 Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C) Gate Charge On-Resistance vs. Junction Temperature Document Number: 71412 S10-0935-Rev. B, 19-Apr-10 150 www.vishay.com 3 Si1417EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 0.25 RDS(on) - On-Resistance (Ω) IS - Source Current (A) 10 TJ = 150 °C TJ = 25 °C 1 0.1 0.20 ID = - 3.3 A 0.15 0.10 0.05 0.00 0 0.3 0.6 0.9 1.2 0 1.5 1 2 3 4 5 6 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.4 35 0.3 28 0.2 Power (W) VGS(th) - Variance (V) ID = 250 µA 0.1 21 14 0.0 7 - 0.1 - 0.2 - 50 - 25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 1 10 TJ - Junction Temperature (°C) Time (s) Threshold Voltage Single Pulse Power, Junction-to-Ambient 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 Notes: 0.1 PDM 0.1 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100 °C/W 0.02 3. TJM - TA = PDMZthJA(t) Single Pulse 4. Surface Mounted 0.01 10-4 10-3 10-2 1 10-1 Square Wave Pulse Duration (s) 10 100 600 Normalized Thermal Transient Impedance, Junction-to-Ambient www.vishay.com 4 Document Number: 71412 S10-0935-Rev. B, 19-Apr-10 Si1417EDH Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 2 Normalized Effective Transient Thermal Impedance 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10-4 10-3 10-2 10-1 Square Wave Pulse Duration (s) 1 10 Normalized Thermal Transient Impedance, Junction-to-Foot Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?71412. Document Number: 71412 S10-0935-Rev. 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