SI1417EDH

Si1417EDH New Product Vishay Siliconix P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.085 @ VGS = –4.5 V –12 0.115 @ VGS = –2.5 V 0.160 @ VGS = –1.8 V ID (A) –3.3 –2.9 –2.4 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch SOT-363 SC-70 (6-LEADS) D 1 6 D D Marking Code YY BB XX G Lot Traceability and Date Code Part # Code 3 kW D 2 5 D G 3 4 S Top View S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID –2.4 IDM IS –1.4 1.56 0.81 –55 to 150 –8 –0.9 1.0 0.52 W _C –1.9 A Symbol VDS VGS 5 secs Steady State –12 "12 Unit V –3.3 –2.7 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71412 S-03187—Rev. A, 05-Mar-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 60 100 34 Maximum 80 125 45 Unit _C/W 1 Si1417EDH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = –250 mA VDS = 0 V, VGS = "4.5 V Gate-Body Leakage VDS = 0 V, VGS = "12 V VDS = –9.6 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = –9.6 V, VGS = 0 V, TJ = 85_C VDS = –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –3.3 A Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –2.9 A VGS = –1.8 V, ID = –1.0 A Forward Transconductancea gfs VSD VDS = –10 V, ID = –3.3 A IS = –1.4 A, VGS = 0 V –4 0.070 0.095 0.133 8 –0.80 –1.1 0.085 0.115 0.160 S V W –0.45 "1.5 "10 –1 –5 V mA mA mA A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = –6 V, RL = 6 W ID ^ –1 A, VGEN = –4.5 V, RG = 6 W VDS = –6 V, VGS = –4.5 V, ID = –3.3 A 5.8 1.3 1.5 0.60 1.4 4.9 4.9 1.0 2.1 7.5 7.5 ms 8 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 8 10,000 Gate Current vs. Gate-Source Voltage 1,000 I GSS – Gate Current (mA) 6 I GSS – Gate Current (m A) 100 TJ = 150_C 4 10 1 0.1 TJ = 25_C 2 0 0 3 6 9 12 15 18 0.01 0 3 6 9 12 VGS – Gate-to-Source Voltage (V) www.vishay.com VGS – Gate-to-Source Voltage (V) Document Number: 71412 S-03187—Rev. A, 05-Mar-01 2 Si1417EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 8 VGS = 5 thru 2.5 V 2V 6 I D – Drain Current (A) I D – Drain Current (A) 6 25_C 8 TC = –55_C Vishay Siliconix Transfer Characteristics 125_C 4 4 1.5 V 2 1V 0 0 1 2 3 4 5 2 0 0.0 0.5 1.0 1.5 2.0 2.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 0.5 1200 Capacitance r DS(on) – On-Resistance ( W ) 0.4 C – Capacitance (pF) 1000 Ciss 800 0.3 600 0.2 VGS = 1.8 V VGS = 2.5 V 0.1 VGS = 4.5 V 0.0 0.0 400 Coss 200 Crss 0 1.5 3.0 4.5 6.0 7.5 0 2 4 6 8 10 12 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 6 V ID = –3.3 A 1.6 On-Resistance vs. Junction Temperature 3 r DS(on) – On-Resistance (W ) (Normalized) 4 1.4 VGS = 4.5 V ID = –3.3 A 1.2 2 1.0 1 0.8 0 0.0 1.5 3.0 4.5 6.0 7.5 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 71412 S-03187—Rev. A, 05-Mar-01 www.vishay.com 3 Si1417EDH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 10 0.25 On-Resistance vs. Gate-to-Source Voltage TJ = 150_C TJ = 25_C r DS(on) – On-Resistance ( W ) 0.20 I S – Source Current (A) 0.15 ID = –3.3 A 1 0.10 0.05 0.1 0 0.3 0.6 0.9 1.2 1.5 0.00 0 1 2 3 4 5 6 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.4 ID = 250 mA 35 Single Pulse Power, Junction-to-Ambient 0.3 V GS(th) Variance (V) 28 0.2 Power (W) 21 0.1 14 0.0 7 –0.1 –0.2 –50 –25 0 25 50 75 100 125 150 0 0.001 0.01 0.1 Time (sec) 1 10 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 0.02 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 100_C/W Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71412 S-03187—Rev. A, 05-Mar-01 Si1417EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71412 S-03187—Rev. A, 05-Mar-01 www.vishay.com 5