SI1913EDH

Si1913EDH New Product Vishay Siliconix Dual P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (W) 0.490 @ VGS = –4.5 V –20 0.750 @ VGS = –2.5 V 1.10 @ VGS = –1.8 V ID (A) –1.0 –0.81 –0.67 D TrenchFETr Power MOSFETS: 1.8-V Rated D ESD Protected: 3000 V D Thermally Enhanced SC-70 Package APPLICATIONS D Load Switching D PA Switch D Level Switch D D SOT-363 SC-70 (6-LEADS) S1 1 6 D1 3 kW G Lot Traceability and Date Code D2 3 4 S2 Part # Code Marking Code DA XX YY 3 kW G G1 2 5 G2 Top View S S ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 85_C PD TJ, Tstg TA = 25_C TA = 85_C ID –0.72 IDM IS –0.61 0.74 0.38 –55 to 150 –3 –0.48 0.57 0.30 W _C –0.63 A Symbol VDS VGS 5 secs Steady State –20 "12 Unit V –1.0 –0.88 THERMAL RESISTANCE RATINGS Parameter t v 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71415 S-03175—Rev. A, 05-Mar-01 www.vishay.com Steady State Steady State RthJA RthJF Symbol Typical 130 170 80 Maximum 170 220 100 Unit _C/W 1 Si1913EDH Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage VGS(th) IGSS VDS = VGS, ID = –100 mA VDS = 0 V, VGS = "4.5 V Gate-Body Leakage VDS = 0 V, VGS = "12 V VDS = –16 V, VGS = 0 V Zero Gate Voltage Drain Current On-State Drain Currenta IDSS ID(on) VDS = –16 V, VGS = 0 V, TJ = 85_C VDS = –5 V, VGS = –4.5 V VGS = –4.5 V, ID = –0.88 A Drain-Source On-State Resistancea rDS(on) VGS = –2.5 V, ID = –0.71 A VGS = –1.8 V, ID = –0.2 A Forward Transconductancea gfs VSD VDS = –10 V, ID = –0.88 A IS = –0.47 A, VGS = 0 V –2 0.400 0.610 0.850 1.5 –0.85 –1.2 0.490 0.750 1.10 S V W –0.45 "1.5 "10 –1 –5 V mA mA mA A Symbol Test Condition Min Typ Max Unit Diode Forward Voltagea Dynamicb Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Qg Qgs Qgd td(on) tr td(off) tf VDD = –10 V, RL = 20 W ID ^ –0.5 A, VGEN = –4.5 V, RG = 6 W VDS = –10 V, VGS = –4.5 V, ID = –0.88 A 1.2 0.3 0.3 0.150 0.480 0.840 0.850 0.23 0.72 1.2 1.2 ms 1.8 nC Notes a. Pulse test; pulse width v 300 ms, duty cycle v 2%. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Gate-Current vs. Gate-Source Voltage 8 10,000 1,000 I GSS – Gate Current (mA) 6 I GSS – Gate Current (m A) 100 10 1 0.1 TJ = 25_C 0.01 0 0 4 8 12 16 0.001 0 3 6 9 12 15 TJ = 150_C Gate Current vs. Gate-Source Voltage 4 2 VGS – Gate-to-Source Voltage (V) www.vishay.com VGS – Gate-to-Source Voltage (V) Document Number: 71415 S-03175—Rev. A, 05-Mar-01 2 Si1913EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 3.0 VGS = 5 thru 3 .5V 2.5 3V 2.5 3.0 TC = –55_C 25_C Vishay Siliconix Transfer Characteristics I D – Drain Current (A) 2.0 I D – Drain Current (A) 2.5 V 2.0 1.5 2V 1.0 1.5 V 1V 0.0 0 1 2 3 4 1.5 125_C 1.0 0.5 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 VDS – Drain-to-Source Voltage (V) VGS – Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.6 VGS = 1.8 V C – Capacitance (pF) 1.2 120 160 Capacitance r DS(on) – On-Resistance ( W ) Ciss VGS = 2.5 V 0.8 80 VGS = 4.5 V 0.4 40 Crss Coss 0.0 0.0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 4 8 12 16 20 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Gate Charge 5 V GS – Gate-to-Source Voltage (V) VDS = 10 V ID = 0.88 A 1.6 On-Resistance vs. Junction Temperature 3 r DS(on) – On-Resistance (W ) (Normalized) 4 1.4 VGS = 4.5 V ID = 0.88 A 1.2 2 1.0 1 0.8 0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0.6 –50 –25 0 25 50 75 100 125 150 Qg – Total Gate Charge (nC) TJ – Junction Temperature (_C) Document Number: 71415 S-03175—Rev. A, 05-Mar-01 www.vishay.com 3 Si1913EDH Vishay Siliconix New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 2 1.6 On-Resistance vs. Gate-to-Source Voltage 1 I S – Source Current (A) r DS(on) – On-Resistance ( W ) TJ = 150_C 1.2 ID = 0.88 A 0.8 TJ = 25_C 0.4 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 0.0 0 1 2 3 4 5 VSD – Source-to-Drain Voltage (V) VGS – Gate-to-Source Voltage (V) Threshold Voltage 0.30 0.25 0.20 V GS(th) Variance (V) 0.15 0.10 0.05 –0.00 –0.05 –0.10 –0.15 –50 0 0.01 1 Power (W) 3 ID = 100 mA 5 Single Pulse Power, Junction-to-Ambient 4 2 –25 0 25 50 75 100 125 150 0.1 1 Time (sec) 10 100 600 TJ – Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 Notes: 0.1 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 Square Wave Pulse Duration (sec) 2. Per Unit Base = RthJA = 170_C/W 3. TJM – TA = PDMZthJA(t) 4. Surface Mounted 10 100 600 www.vishay.com 4 Document Number: 71415 S-03175—Rev. A, 05-Mar-01 Si1913EDH New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Foot 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 Vishay Siliconix 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 Square Wave Pulse Duration (sec) 1 10 Document Number: 71415 S-03175—Rev. A, 05-Mar-01 www.vishay.com 5