MMDL770T1

Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Extremely Low Minority Carrier Lifetime • Very Low Capacitance — 1.0 pF @ 20 V • Low Reverse Leakage — 200 nA (max) • High Reverse Voltage — 70 Volts (min) • Available in 8 mm Tape and Reel • Device Marking: 5H MMDL770T1 1.0 pF SCHOTTKY BARRIER DIODE 1 1 CATHODE 2 ANODE 2 MAXIMUM RATINGS Symbol VR Rating Reverse Voltage Value 70 Unit Vdc PLASTIC SOD– 323 CASE 477 THERMAL CHARACTERISTICS Symbol PD Characteristic Total Device Dissipation FR–5 Board,* T A = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature Range Max 200 1.57 635 –55 to+150 Unit mW mW/°C °C/W °C R θJA T J , T stg *FR–5 Minimum Pad ORDERING INFORMATION Device MMDL770T1 Package SOD–323 Shipping 3000 / Tape & Reel ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (I R = 10 µA) Diode Capacitance (V R = 20 Volts, f = 1.0 MHz) Reverse Leakage (V R = 35 V) Forward Voltage (I F = 1.0 mAdc) (I F = 10 mA) Symbol V (BR)R CT IR Min 70 — — Typ — 0.5 9.0 Max — 1.0 200 Unit Volts pF nAdc V F — 0.7 1.0 Vdc S4–1/3 MMDL770T1 TYPICAL CHARACTERISTICS τ, MINORITY CARRIER LIFETIME (ps) 2.0 500 C T , TOTAL CAPACITANCE (pF) MMBD770T1 f = 1.0 MHz 1.6 MMBD770T1 400 KRAKAUER METHOD 300 1.2 0.8 200 0.4 100 0 0 5.0 10 15 20 25 30 35 40 45 50 0 0 10 20 30 40 50 60 70 80 90 100 V R , REVERSE VOLTAGE (VOLTS) I F , FORWARD CURRENT (mA) Figure 1. Total Capacitance Figure 2. Minority Carrier Lifetime 10 100 MMBD770T1 MMBD770T1 I R , REVERSE LEAKAGE (µA) 1.0 T A = 100°C I F , FORWARD CURRENT (mA) 10 T A = 75°C 0.1 T A = 85°C T A = –40°C 1.0 0.01 T A = 25°C T A = 25°C 0.001 0 10 20 30 40 50 0.1 0.2 0.4 0.8 1.2 1.6 2.0 V R , REVERSE VOLTAGE (VOLTS) V F , FORWARD VOLTAGE (VOLTS) Figure 3. Reverse Leakage Figure 4. Forward Voltage S4–2/3 MMDL770T1 PACKAGE DIMENSIONS SOD–323 PLASTIC PACKAGE CASE 477–02 ISSUE A K A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. MILLIMETERS DIM E D 1 2 B INCHES MIN MAX 0.063 0.071 0.045 0.053 0.031 0.039 0.010 0.016 0.006 REF 0.000 0.004 0.0035 0.0070 0.091 0.106 C J NOTE 3 H A B C D E H J K MIN MAX 1.60 1.80 1.15 1.35 0.80 1.00 0.25 0.40 0.15 REF 0.00 0.10 0.089 0.177 2.30 2.70 0.63 mm 0.025’’ STYLE 1: PIN 1. CATHODE 2. ANODE 1.60 mm 0.063’’ 2.85 mm 0.112’’ mm inches 0.83 mm 0.033’’ ( ) SOD–323 Soldering Footprint S4–3/3