MMDL101T1

MMDL101T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. Features • Very Low Capacitance − Less than 1.0 pF @ 0 V • Low Noise Figure − 6.0 dB Typ @ 1.0 GHz • Pb−Free Package is Available MAXIMUM RATINGS Rating Reverse Voltage Symbol VR Value 7.0 Unit Vdc http://onsemi.com 1.0 pF SCHOTTKY BARRIER DIODE 1 CATHODE 2 ANODE THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR−5 Board, (Note 1) @TA = 25°C Derate above 25°C Thermal Resistance, Junction−to−Ambient Junction and Storage Temperature Range Symbol PD 200 1.57 RqJA TJ, Tstg 635 −55 to +150 mW mW/°C °C/W °C 1 PLASTIC SOD−323 CASE 477 STYLE 1 Max Unit 2 Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR−5 Minimum Pad MARKING DIAGRAM ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Reverse Breakdown Voltage (IR = 10 mA) Diode Capacitance (VR = 0, f = 1.0 MHZ), (Note 2)* Reverse Leakage (VR = 3.0 V) Noise Figure (f = 1.0 GHz), (Note 3)* Forward Voltage (IF = 10 mA) *Notes on Next Page Symbol V(BR)R 7.0 CT − IR − NF − VF − 0.5 0.6 6.0 − Vdc 20 250 dB 0.88 1.0 nAdc 10 − pF Min Typ Max Unit V 4M M G G 4M = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMDL101T1 MMDL101T1G Package SOD−323 SOD−323 (Pb−Free) Shipping† 3000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. © Semiconductor Components Industries, LLC, 2006 1 February, 2006 − Rev. 1 Publication Order Number: MMDL101T1/D MMDL101T1 TYPICAL CHARACTERISTICS 1.0 0.7 0.5 IR, REVERSE LEAKAGE (m A) VR = 3.0 Vdc 0.2 0.1 0.07 0.05 100 IF, FORWARD CURRENT (mA) 10 TA = 85°C TA = −40°C 1.0 TA = 25°C MMBD110T1 0.02 MMBD110T1 0.01 30 40 50 60 70 80 90 100 110 TA, AMBIENT TEMPERATURE (°C) 120 130 0.1 0.3 0.4 0.5 0.6 VF, FORWARD VOLTAGE (VOLTS) 0.7 0.8 Figure 1. Reverse Leakage Figure 2. Forward Voltage 1.0 11 10 NF, NOISE FIGURE (dB) LOCAL OSCILLATOR FREQUENCY = 1.0 GHz (Test Circuit Figure 5) C, CAPACITANCE (pF) 0.9 9 8 7 6 5 4 3 0.8 0.7 MMBD110T1 0.6 0 1.0 2.0 3.0 VR, REVERSE VOLTAGE (VOLTS) 4.0 2 1 0.1 0.2 MMBD110T1 0.5 1.0 2.0 5.0 PLO, LOCAL OSCILLATOR POWER (mW) 10 Figure 3. Capacitance Figure 4. Noise Figure LOCAL OSCILLATOR NOTES ON TESTING AND SPECIFICATIONS 2. CC and CT are measured using a capacitance bridge (Boonton Electronics Model 75A or equivalent). 3. Noise figure measured with diode under test in tuned diode mount using UHF noise source and local oscillator (LO) frequency of 1.0 GHz. The LO power is adjusted for 1.0 mW. IF amplifier NF = 1.5 dB, f = 30 MHz, see Figure 5. UHF NOISE SOURCE H.P. 349A DIODE IN TUNED MOUNT NOISE FIGURE METER H.P. 342A IF AMPLIFIER NF = 1.5 dB f = 30 MHz Figure 5. Noise Figure Test Circuit http://onsemi.com 2 MMDL101T1 PACKAGE DIMENSIONS SOD−323 CASE 477−02 ISSUE G HE D b 1 2 E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. LEAD THICKNESS SPECIFIED PER L/F DRAWING WITH SOLDER PLATING. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. 5. DIMENSION L IS MEASURED FROM END OF RADIUS. MILLIMETERS DIM MIN NOM MAX A 0.80 0.90 1.00 A1 0.00 0.05 0.10 A3 0.15 REF b 0.25 0.32 0.4 C 0.089 0.12 0.177 D 1.60 1.70 1.80 E 1.15 1.25 1.35 L 0.08 HE 2.30 2.50 2.70 STYLE 1: PIN 1. CATHODE 2. ANODE INCHES NOM MAX 0.035 0.040 0.002 0.004 0.006 REF 0.010 0.012 0.016 0.003 0.005 0.007 0.062 0.066 0.070 0.045 0.049 0.053 0.003 0.090 0.098 0.105 A3 A L NOTE 5 MIN 0.031 0.000 C NOTE 3 A1 SOLDERING FOOTPRINT* 0.63 0.025 0.83 0.033 1.60 0.063 2.85 0.112 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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