MUN5214DW1T1

Dual Bias ResistorTransistors NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminates these individual components by integrating them into a single device. In the MUN5211DW1T1 series, two BRT devices are housed in the SOT–363 package which is ideal for low power surface mount applications where board space is at a premium. • Simplifies Circuit Design • Reduces Board Space • Reduces Component Count • Available in 8 mm, 7 inch/3000 Unit Tape and Reel MUN5211DW1T1 Series 6 5 4 1 2 3 SOT-363 CASE 419B STYLE1 6 5 4 MAXIMUM RATINGS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Rating Symbol Value Unit Collector-Base Voltage V CBO 50 Vdc Collector-Emitter Voltage V CEO 50 Vdc Collector Current IC 100 mAdc THERMAL CHARACTERISTICS Characteristic (One Junction Heated) Symbol Max Unit Total Device Dissipation PD 187 (Note 1.) mW 256 (Note 2.) T A = 25°C 1.5 (Note 1.) mW/°C Derate above 25°C 2.0 (Note 2.) Thermal Resistance – Junction-to-Ambient Characteristic (Both Junctions Heated) Total Device Dissipation T A = 25°C Derate above 25°C Thermal Resistance – Junction-to-Ambient Thermal Resistance – Junction-to-Lead Junction and Storage Temperature 1. FR–4 @ Minimum Pad R θJA 670 (Note 1.) 490 (Note 2.) °C/W Q2 R2 R1 1 2 R1 R2 Q1 3 MARKING DIAGRAM 6 5 4 7X 1 2 3 7X = Device Marking = (See Page 2) Symbol PD Max 250 (Note 1.) 385 (Note 2.) 2.0 (Note 1.) 3.0 (Note 2.) 493 (Note 1.) 325 (Note 2.) 188 (Note 1.) 208 (Note 2.) –55 to +150 Unit mW mW/°C °C/W °C/W °C DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet. R θJA R θJL T J , T stg 2. FR–4 @ 1.0 x 1.0 inch Pad MUN5211dw–1/8 MUN5211DW1T1 DEVICE MARKING AND RESISTOR VALUES Device Package Marking R 1(K) R 2(K) MUN5211DW1T1 SOT–363 7A 10 10 MUN5212DW1T1 SOT–363 7B 22 22 MUN5213DW1T1 SOT–363 7C 47 47 MUN5214DW1T1 SOT–363 7D 10 47 MUN5215DW1T1 (Note 3.) SOT–363 7E 10 MUN5216DW1T1 (Note 3.) SOT–363 7F 4.7 MUN5230DW1T1 (Note 3.) SOT–363 7G 1.0 1.0 MUN5231DW1T1 (Note 3.) SOT–363 7H 2.2 2.2 MUN5232DW1T1 (Note 3.) SOT–363 7J 4.7 4.7 MUN5233DW1T1 (Note 3.) SOT–363 7K 4.7 47 MUN5234DW1T1 (Note 3.) SOT–363 7L 22 47 MUN5235DW1T1 (Note 3.) SOT–363 7M 2.2 47 MUN5236DW1T1 (Note 3.) SOT–363 7N 100 100 MUN5237DW1T1 (Note 3.) SOT–363 7P 47 22 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ) Characteristic Symbol Min Typ OFF CHARACTERISTICS Collector-Base Cutoff Current (V CB = 50 V, I E = 0) I CBO – – Collector-Emitter Cutoff Current (V CE = 50 V, I B = 0) I CEO – – I EBO – – Emitter-Base Cutoff Current MUN5211DW1T1 – – (V EB = 6.0 V, I C = 0) MUN5212DW1T1 – – MUN5213DW1T1 – – MUN5214DW1T1 – – MUN5215DW1T1 – – MUN5216DW1T1 – – MUN5230DW1T1 – – MUN5231DW1T1 – – MUN5232DW1T1 – – MUN5233DW1T1 – – MUN5234DW1T1 – – MUN5235DW1T1 – – MUN5236DW1T1 – – MUN5237DW1T1 Collector-Base Breakdown Voltage (I C = 10 µA, I E = 0) V (BR)CBO 50 – Collector-Emitter Breakdown Voltage(Note 4.)(IC = 2.0 mA,I B=0) V (BR)CEO 50 – 3. New resistor combinations. Updated curves to follow in subsequent data sheets. 4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0% Series Shipping 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 3000/Tape & Reel 88 Max 100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 – – Unit nAdc nAdc mAdc Vdc Vdc MUN5211dw–2/8 MUN5211DW1T1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) Characteristic Symbol ON CHARACTERISTICS(Note 5.) h FE DC Current Gain MUN5211DW1T1 (V CE = 10 V, I C = 5.0 mA) MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5235DW1T1 MUN5235DW1T1 Series (Continued) Min Typ 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 – 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 – Max – – – – – – – – – – – – – – 0.25 Unit Collector-Emitter Saturation Voltage (IC= 10mA,IB= 0.3 mA) V CE(sat) (I C= 10mA, I B= 5mA) MUN5230DW1T1/MUN5231DW1T1 (I C= 10mA, IB= 1mA) MUN5215DW1T1/MUN5216DW1T1 MUN5232DW1T1/MUN5233DW1T1/MUN5234DW1T1 V OL Output Voltage (on) MUN5211DW1T1 (V CC = 5.0 V, V B = 2.5 V, R L = 1.0 kΩ) MUN5212DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 (V CC = 5.0 V, V B = 3.5 V, R L = 1.0 kΩ) MUN5213DW1T1 (V CC = 5.0 V, V B = 5.5 V, R L = 1.0 kΩ) MUN5236DW1T1 (V CC = 5.0 V, V B = 4.0 V, R L = 1.0 kΩ) MUN5237DW1T1 Output Voltage (off) (V CC = 5.0 V, V B = 0.5 V, R L = 1.0 kΩ) V OH (V CC = 5.0 V, V B = 0.05 V, R L = 1.0 kΩ) MUN5230DW1T1 (V CC = 5.0 V, V B = 0.25 V, R L = 1.0 kΩ) MUN5215DW1T1 MUN5216DW1T1 MUN5233DW1T1 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% Vdc – – – – – – – – – – – – – – 4.9 – – – – – – – – – – – – – – – 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 – Vdc Vdc MUN5211dw–3/8 MUN5211DW1T1 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted, common for Q 1 and Q 2 ,) (Continued) Characteristic Symbol Min Typ ON CHARACTERISTICS(Note 6.) Input Resistor MUN5211DW1T1 R1 MUN5212DW1T1 MUN5213DW1T1 MUN5214DW1T1 MUN5215DW1T1 MUN5216DW1T1 MUN5230DW1T1 MUN5231DW1T1 MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5236DW1T1 MUN5237DW1T1 MUN5211DW1T1/MUN5212DW1T1/ R 1 /R 2 MUN5213DW1T1/MUN5236DW1T1 MUN5214DW1T1 MUN5215DW1T1/MUN5216DW1T1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.17 – 0.8 0.055 0.38 0.038 1.7 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 0.21 – 1.0 0.1 0.47 0.047 2.1 Series Max 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 0.25 – 1.2 0.185 0.56 0.056 2.6 Unit kΩ Resistor Ratio MUN5230DW1T1/MUN5231DW1T1/MUN5232DW1T1 MUN5233DW1T1 MUN5234DW1T1 MUN5235DW1T1 MUN5237DW1T1 6. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% 300 P D , POWER DISSIPATION (mW) 250 200 150 100 50 833°C 0 –50 0 50 100 150 T A , AMBIENT TEMPERATURE (°C) Figure 1. Derating Curve MUN5211dw–4/8 MUN5211DW1T1 TYPICAL ELECTRICAL CHARACTERISTICS – MUN5211DW1T1 V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) Series 1 0.1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 100 0.01 0.001 0 20 40 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 2. V CE(sat) versus I C 4 100 Figure 3. DC Current Gain I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 3 1 2 0.1 1 0.01 0 0 10 20 30 40 50 0.001 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 4. Output Capacitance 10 Figure 5. Output Current versus Input Voltage V in , INPUT VOLTAGE (VOLTS) 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 6. Input Voltage versus Output Current MUN5211dw–5/8 MUN5211DW1T1 TYPICAL ELECTRICAL CHARACTERISTICS – MUN5212DW1T1 V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) Series 10 h FE , DC CURRENT GAIN (NORMALIZED) 1000 1 100 0.1 0.01 0 20 40 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 7. V CE(sat) versus I C 4 100 Figure 8. DC Current Gain I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 3 1 2 0.1 1 0.01 0.001 0 0 10 20 30 40 50 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance 100 Figure 10. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current MUN5211dw–6/8 MUN5211DW1T1 TYPICAL ELECTRICAL CHARACTERISTICS – MUN5213DW1T1 V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) Series 10 1 h FE , DC CURRENT GAIN (NORMALIZED) 1000 100 0.1 0.01 0 20 40 50 10 1 10 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 12. V CE(sat) versus I C 1 100 Figure 13. DC Current Gain 0.8 I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 0.6 1 0.4 0.1 0.2 0.01 0 0 10 20 30 40 50 0.001 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 14. Output Capacitance 100 Figure 15. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 10 1 0.1 0 10 20 30 40 50 I C , COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current MUN5211dw–7/8 MUN5211DW1T1 TYPICAL ELECTRICAL CHARACTERISTICS – MUN5214DW1T1 V CE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) Series 1 h FE , DC CURRENT GAIN (NORMALIZED) 300 250 0.1 200 150 0.01 100 50 0.001 0 20 40 60 80 0 1 2 3 4 5 10 15 20 40 50 60 70 80 90 100 I C , COLLECTOR CURRENT (mA) I C , COLLECTOR CURRENT (mA) Figure 17. V CE(sat) versus I C 4 100 Figure 18. DC Current Gain 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 I C , COLLECTOR CURRENT (mA) C ob CAPACITANCE (pF) 10 1 0 1 2 3 4 5 6 7 8 9 10 V R , REVERSE BIAS VOLTAGE (VOLTS) V in , INPUT VOLTAGE (VOLTS) Figure 19. Output Capacitance 10 Figure 20. Output Current versus Input oltage V in , INPUT VOLTAGE (VOLTS) 1 0.1 0 10 20 30 40 50 I C ,COLLECTOR CURRENT (mA) Figure 21. Input Voltage versus Output Current MUN5211dw–8/8