MUN5214T1G

MUN5211T1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. Features http://onsemi.com NPN SILICON BIAS RESISTOR TRANSISTORS PIN 3 COLLECTOR (OUTPUT) PIN 2 EMITTER (GROUND)     Simplifies Circuit Design Reduces Board Space Reduces Component Count The SC-70/SOT-323 package can be soldered using wave or reflow. The modified gull-winged leads absorb thermal stress during soldering eliminating the possibility of damage to the die.  Available in 8 mm embossed tape and reel. Use the Device Number to order the 7 inch/3000 unit reel.  These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (TA = 25C unless otherwise noted) Rating Collector--Base Voltage Collector--Emitter Voltage Collector Current Symbol VCBO VCEO IC Value 50 50 100 Unit Vdc Vdc mAdc PIN 1 BASE (INPUT) R1 R2 3 1 2 SC-70/SOT-323 CASE 419 STYLE 3 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25C Derate above 25C Thermal Resistance, Junction--to--Ambient Thermal Resistance, Junction--to--Lead Junction and Storage Temperature Range Symbol PD Max 202 (Note 1) 310 (Note 2) 1.6 (Note 1) 2.5 (Note 2) 618 (Note 1) 403 (Note 2) 280 (Note 1) 332 (Note 2) -- 55 to +150 Unit mW mW/C C/W C/W C 8x M G G RθJA RθJL TJ, Tstg 8x = Device Code M = Date Code* G = Pb--Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR--4 @ Minimum Pad. 2. FR--4 @ 1.0 x 1.0 inch Pad. DEVICE MARKING INFORMATION See specific marking information in the device marking table on page 2 of this data sheet.  Semiconductor Components Industries, LLC, 2010 October, 2010 - Rev. 9 - 1 Publication Order Number: MUN5211T1/D MUN5211T1G Series DEVICE MARKING AND RESISTOR VALUES Device MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G (Note 3) MUN5230T1G MUN5231T1G (Note 3) MUN5232T1G MUN5233T1G MUN5234T1G (Note 3) MUN5235T1G MUN5236T1G (Note 3) MUN5237T1G (Note 3) Package SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) SC--70/SOT--323 (Pb--Free) Marking 8A 8B 8C 8D 8E 8F 8G 8H 8J 8K 8L 8M 8N 8P R1 (K) 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 R2 (K) 10 22 47 47   1.0 2.2 4.7 47 47 47 100 22 Shipping† 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 3. New devices. Updated curves to follow in subsequent data sheets. http://onsemi.com 2 MUN5211T1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector--Base Cutoff Current (VCB = 50 V, IE = 0) Collector--Emitter Cutoff Current (VCE = 50 V, IB = 0) Emitter--Base Cutoff Current (VEB = 6.0 V, IC = 0) MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G ICBO ICEO IEBO ----------------50 50 ------------------100 500 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 --nAdc nAdc mAdc Symbol Min Typ Max Unit Collector--Base Breakdown Voltage (IC = 10 mA, IE = 0) Collector--Emitter Breakdown Voltage (Note 4) (IC = 2.0 mA, IB = 0) ON CHARACTERISTICS (Note 4) DC Current Gain (VCE = 10 V, IC = 5.0 mA) MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5236T1G MUN5230T1G MUN5231T1G MUN5237T1G MUN5215T1G MUN5216T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G V(BR)CBO V(BR)CEO Vdc Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 --------------- 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 --------------- --------------0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 Vdc Collector--Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) VCE(sat) (IC = 10 mA, IB = 5 mA) (IC = 10 mA, IB = 1 mA) 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 3 MUN5211T1G Series ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic ON CHARACTERISTICS (Note 5) (Continued) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN5211T1G MUN5212T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5213T1G MUN5236T1G MUN5237T1G MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5234T1G MUN5235T1G MUN5230T1G MUN5215T1G MUN5216T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5236T1G MUN5237T1G MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G MUN5211T1G MUN5212T1G MUN5213T1G MUN5214T1G MUN5215T1G MUN5216T1G MUN5230T1G MUN5231T1G MUN5232T1G MUN5233T1G MUN5234T1G MUN5235T1G MUN5236T1G MUN5237T1G VOL --------------4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 0.8 0.8 0.8 0.17 --0.8 0.8 0.8 0.055 0.38 0.038 0.8 1.7 ----------------------------10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 1.0 1.0 1.0 0.21 --1.0 1.0 1.0 0.1 0.47 0.047 1.0 2.1 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 --------------13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 1.2 1.2 1.2 0.25 --1.2 1.2 1.2 0.185 0.56 0.056 1.2 2.6 Vdc Symbol Min Typ Max Unit (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 5.5 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 4.0 V, RL = 1.0 kΩ) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ) VOH Vdc (VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kΩ) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) Input Resistor R1 kΩ Resistor Ratio R1/R2 5. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0% http://onsemi.com 4 MUN5211T1G Series 350 PD, POWER DISSIPATION (mW) 300 250 200 150 100 50 0 -- 50 RθJA = 403C/W 0 50 100 TA, AMBIENT TEMPERATURE (C) 150 Figure 1. Derating Curve http://onsemi.com 5 MUN5211T1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN5211T1G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = --25C 25C 0.1 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C --25C 100 0.01 0.001 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 2. VCE(sat) versus IC Figure 3. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25C 100 75C IC, COLLECTOR CURRENT (mA) 10 1 0.1 25C TA = --25C C ob , CAPACITANCE (pF) 3 2 1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 10 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 4. Output Capacitance Figure 5. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = --25C 25C 75C 1 0.1 0 10 40 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 6. Input Voltage versus Output Current http://onsemi.com 6 MUN5211T1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN5212T1G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 TA = --25C 25C 75C 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C --25C 0.1 100 0.01 0.001 0 20 IC, COLLECTOR CURRENT (mA) 40 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 7. VCE(sat) versus IC Figure 8. DC Current Gain 4 f = 1 MHz IE = 0 V TA = 25C 100 IC, COLLECTOR CURRENT (mA) 10 1 0.1 0.01 75C 25C TA = --25C C ob , CAPACITANCE (pF) 3 2 1 VO = 5 V 0 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 9. Output Capacitance Figure 10. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = --25C 10 75C 25C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage versus Output Current http://onsemi.com 7 MUN5211T1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN5213T1G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 10 IC/IB = 10 1000 hFE , DC CURRENT GAIN (NORMALIZED) VCE = 10 V TA = 75C 25C --25C 1 TA = --25C 0.1 25C 75C 100 0.01 0 20 40 IC, COLLECTOR CURRENT (mA) 50 10 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 12. VCE(sat) versus IC Figure 13. DC Current Gain 1 0.8 C ob , CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25C 100 75C 10 1 0.1 0.01 25C TA = --25C 0.6 0.4 0.2 0 VO = 5 V 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 0 10 20 30 40 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage 100 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = --25C 10 25C 75C 1 0.1 0 10 20 30 40 50 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage versus Output Current http://onsemi.com 8 MUN5211T1G Series TYPICAL ELECTRICAL CHARACTERISTICS - MUN5214T1G VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS) 1 TA = --25C 25C 75C hFE , DC CURRENT GAIN (NORMALIZED) IC/IB = 10 300 250 200 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 IC, COLLECTOR CURRENT (mA) 90 100 VCE = 10 TA = 75C 25C --25C 0.1 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 Figure 17. VCE(sat) versus IC Figure 18. DC Current Gain 4 3.5 Cob , CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 VR, REVERSE BIAS VOLTAGE (VOLTS) 40 45 50 f = 1 MHz lE = 0 V TA = 25C 100 TA = 75C IC, COLLECTOR CURRENT (mA) 25C --25C 10 VO = 5 V 1 0 2 4 6 Vin, INPUT VOLTAGE (VOLTS) 8 10 Figure 19. Output Capacitance Figure 20. Output Current versus Input Voltage 10 VO = 0.2 V V in , INPUT VOLTAGE (VOLTS) TA = --25C 25C 75C 1 0.1 0 10 20 30 IC, COLLECTOR CURRENT (mA) 40 50 Figure 21. Input Voltage versus Output Current http://onsemi.com 9 MUN5211T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5215T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C --25C 0.01 TA = --25C 25C 1000 75C VCE = 10 V 0.1 25C 100 10 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 22. VCE(sat) versus IC Figure 23. DC Current Gain 4.5 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 75C 10 1 0.1 0.01 TA = --25C 25C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 24. Output Capacitance Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = --25C 1 75C 25C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 26. Input Voltage versus Output Current http://onsemi.com 10 MUN5211T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5230T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C --25C hFE, DC CURRENT GAIN 100 0.1 25C 10 75C 25C TA = --25C VCE = 10 V 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 27. VCE(sat) versus IC Figure 28. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 100 10 1 0.1 0.01 75C 25C TA = --25C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = --25C 1 75C 25C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 31. Input Voltage versus Output Current http://onsemi.com 11 MUN5211T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5232T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 75C --25C 0.01 75C 1000 VCE = 10 V 0.1 25C 100 10 TA = --25C 25C 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 6 5 4 3 2 1 0 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 10 1 0.1 0.01 TA = --25C 75C 25C Cob, CAPACITANCE (pF) VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 0.001 Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = --25C 1 75C 25C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 36. Input Voltage versus Output Current http://onsemi.com 12 MUN5211T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5233T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 hFE, DC CURRENT GAIN 1000 VCE = 10 V 75C 100 TA = --25C 0.1 --25C 0.01 75C 25C 25C 10 0.001 0 5 10 15 25 20 IC, COLLECTOR CURRENT (mA) 30 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 37. VCE(sat) versus IC Figure 38. DC Current Gain 4 3.5 Cob, CAPACITANCE (pF) 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 100 10 1 75C 25C TA = --25C 0.1 0.01 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) TA = --25C 1 75C 25C VO = 0.2 V 0.1 0 20 5 10 15 IC, COLLECTOR CURRENT (mA) 25 Figure 41. Input Voltage versus Output Current http://onsemi.com 13 MUN5211T1G Series TYPICAL ELECTRICAL CHARACTERISTICS — MUN5235T1G VCE(sat), COLLECTOR VOLTAGE (VOLTS) 1 IC/IB = 10 75C --25C 0.01 hFE, DC CURRENT GAIN 1000 75C 100 VCE = 10 V 0.1 25C TA = --25C 25C 10 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 50 1 1 10 IC, COLLECTOR CURRENT (mA) 100 Figure 42. VCE(sat) versus IC Figure 43. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25C IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 100 10 1 0.1 0.01 25C 75C TA = --25C VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) 9 10 0.001 Figure 44. Output Capacitance Figure 45. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) 75C 1 25C TA = --25C VO = 0.2 V 0.1 0 40 10 20 30 IC, COLLECTOR CURRENT (mA) 50 Figure 46. Input Voltage versus Output Current http://onsemi.com 14 MUN5211T1G Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 47. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 48. Open Collector Inverter: Inverts the Input Signal Figure 49. Inexpensive, Unregulated Current Source http://onsemi.com 15 MUN5211T1G Series PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419--04 ISSUE N D e1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A A1 A2 b c D E e e1 L HE MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 3 HE 1 2 E b e A 0.05 (0.002) A1 A2 L c STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb--Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303--675--2175 or 800--344--3860 Toll Free USA/Canada Fax: 303--675--2176 or 800--344--3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800--282--9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81--3--5773--3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative http://onsemi.com 16 MUN5211T1/D