BSC010NE2LSATMA1

BSC010NE2LS MOSFET OptiMOSTMPower-MOSFET,25V SuperSO8 8 Features •OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 25 V RDS(on),max 1.0 mΩ ID 242 A QOSS 33 nC QG(0V..10V) 64 nC Type/OrderingCode Package BSC010NE2LS PG-TDSON-8 1) 5 6 2 Marking 010NE2LS 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2020-11-12 OptiMOSTMPower-MOSFET,25V BSC010NE2LS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.4,2020-11-12 OptiMOSTMPower-MOSFET,25V BSC010NE2LS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 242 153 212 134 39 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 968 A TC=25°C - - 50 A TC=25°C EAS - - 190 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 96 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - - 1.3 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.4,2020-11-12 OptiMOSTMPower-MOSFET,25V BSC010NE2LS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250µA - 0.1 10 10 100 µA VDS=25V,VGS=0V,Tj=25°C VDS=25V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.1 0.8 1.3 1.0 mΩ VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG 0.3 0.5 1.0 Ω - Transconductance gfs 85 170 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 25 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 4700 6300 pF VGS=0V,VDS=12V,f=1MHz Output capacitance1) Coss - 1700 2300 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 180 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 6.7 - ns VDD=12V,VGS=10V,ID=30A, RG=1.6Ω Rise time tr - 6.0 - ns VDD=12V,VGS=10V,ID=30A, RG=1.6Ω Turn-off delay time td(off) - 34 - ns VDD=12V,VGS=10V,ID=30A, RG=1.6Ω Fall time tf - 4.4 - ns VDD=12V,VGS=10V,ID=30A, RG=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 11 15 nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 7.5 10 nC VDD=12V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 6.8 10 nC VDD=12V,ID=30A,VGS=0to4.5V Switching charge Qsw - 10 15 nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 31 41 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.4 - V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 64 85 nC VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 27 36 nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 33 45 nC VDD=12V,VGS=0V 1) 2) Defined by design. Not subject to production test See figure 16 for gate charge parameter definition. Values are defined by design. Not subject to production test Final Data Sheet 4 Rev.2.4,2020-11-12 OptiMOSTMPower-MOSFET,25V BSC010NE2LS Table7Reversediode Parameter Symbol Diode continuous forward current Diode pulse current Diode forward voltage 1) Reverse recovery charge 1) Values Unit Note/TestCondition 96 A TC=25°C - 968 A TC=25°C - 0.8 1 V VGS=0V,IF=30A,Tj=25°C - 20 - nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - IS,pulse - VSD Qrr Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.4,2020-11-12 OptiMOSTMPower-MOSFET,25V BSC010NE2LS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 120 250 100 200 80 ID[A] Ptot[W] 150 60 100 40 50 20 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 100 µs 10 µs 102 100 0.5 1 ms 0.2 1 10 ZthJC[K/W] ID[A] 10 ms DC 0.1 10 -1 0.05 0.02 0.01 single pulse 100 10-1 10-1 10-2 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.4,2020-11-12 OptiMOSTMPower-MOSFET,25V BSC010NE2LS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 800 2.0 4.5 V 5V 10 V 700 4V 3.2 V 600 1.5 3.5 V 3.5 V 4V RDS(on)[mΩ] ID[A] 500 400 3.2 V 300 4.5 V 5V 1.0 7V 8V 10 V 3V 200 0.5 2.8 V 100 0 0 1 2 0.0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 320 320 240 240 ID[A] gfs[S] 400 160 160 150 °C 80 80 25 °C 0 0 1 2 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.4,2020-11-12 OptiMOSTMPower-MOSFET,25V BSC010NE2LS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 3.0 2.5 2.5 2.0 1.5 VGS(th)[V] RDS(on)[mΩ] 2.0 1.5 1.0 1.0 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 Ciss 102 IF[A] C[pF] Coss 103 101 Crss 102 0 5 10 15 150 °C 20 25 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 25 °C IF=f(VSD);parameter:Tj 8 Rev.2.4,2020-11-12 OptiMOSTMPower-MOSFET,25V BSC010NE2LS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 12 V 10 5V 20 V 25 °C 100 °C 8 VGS[V] IAV[A] 125 °C 101 6 4 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 60 70 80 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 28 27 26 VBR(DSS)[V] 25 24 23 22 21 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.4,2020-11-12 OptiMOSTMPower-MOSFET,25V BSC010NE2LS 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.4,2020-11-12 OptiMOSTMPower-MOSFET,25V BSC010NE2LS   Figure2OutlineFootprint(TDSON-8) Final Data Sheet 11 Rev.2.4,2020-11-12 OptiMOSTMPower-MOSFET,25V BSC010NE2LS Dimension in mm Figure3OutlineTape(TDSON-8) Final Data Sheet 12 Rev.2.4,2020-11-12 OptiMOSTMPower-MOSFET,25V BSC010NE2LS RevisionHistory BSC010NE2LS Revision:2020-11-12,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2019-07-23 Update package outline 2.4 2020-11-12 Update current rating Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.4,2020-11-12