BSC018NE2LSATMA1

BSC018NE2LS MOSFET OptiMOSTMPower-MOSFET,25V SuperSO8 8 Features •OptimizedforhighperformanceBuckconverter •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 25 V RDS(on),max 1.8 mΩ ID 153 A QOSS 21 nC QG(0V..10V) 39 nC Type/OrderingCode Package BSC018NE2LS PG-TDSON-8 1) 5 6 2 Marking 018NE2LS 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2020-08-14 OptiMOSTMPower-MOSFET,25V BSC018NE2LS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.4,2020-08-14 OptiMOSTMPower-MOSFET,25V BSC018NE2LS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 153 97 135 86 29 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 612 A TC=25°C - - 50 A TC=25°C EAS - - 80 mJ ID=50A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 69 2.5 W TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current3) 4) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 1.8 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See figure 3 for more detailed information 4) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.4,2020-08-14 OptiMOSTMPower-MOSFET,25V BSC018NE2LS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2.0 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=25V,VGS=0V,Tj=25°C VDS=25V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 1.8 1.5 2.3 1.8 mΩ VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG 0.3 0.7 1.4 Ω - Transconductance gfs 70 140 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 25 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 2800 3700 pF VGS=0V,VDS=12V,f=1MHz Output capacitance1) Coss - 1000 1300 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 110 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 5.5 - ns VDD=12V,VGS=10V,ID=30A, RG=1.6Ω Rise time tr - 4.4 - ns VDD=12V,VGS=10V,ID=30A, RG=1.6Ω Turn-off delay time td(off) - 26 - ns VDD=12V,VGS=10V,ID=30A, RG=1.6Ω Fall time tf - 3.6 - ns VDD=12V,VGS=10V,ID=30A, RG=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge1) Gate charge at threshold1) Values Min. Typ. Max. Qgs - 7.0 9.2 nC VDD=12V,ID=30A,VGS=0to4.5V Qg(th) - 4.5 6.0 nC VDD=12V,ID=30A,VGS=0to4.5V Qgd - 4.3 6.4 nC VDD=12V,ID=30A,VGS=0to4.5V 1) Qsw - 6.7 9.6 nC VDD=12V,ID=30A,VGS=0to4.5V 1) Gate charge total Qg - 19 25 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.5 - V VDD=12V,ID=30A,VGS=0to4.5V Qg - 39 51 nC VDD=12V,ID=30A,VGS=0to10V Qg(sync) - 16 22 nC VDS=0.1V,VGS=0to4.5V Qoss - 21 28 nC VDD=12V,VGS=0V 1) Gate to drain charge Switching charge Gate charge total1) 1) Gate charge total, sync. FET 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.4,2020-08-14 OptiMOSTMPower-MOSFET,25V BSC018NE2LS Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 69 A TC=25°C - 612 A TC=25°C - 0.85 1 V VGS=0V,IF=30A,Tj=25°C - 20 - nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.4,2020-08-14 OptiMOSTMPower-MOSFET,25V BSC018NE2LS 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 80 160 70 140 60 120 50 100 ID[A] Ptot[W] Diagram1:Powerdissipation 40 80 30 60 20 40 10 20 0 0 40 80 120 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 100 µs 102 1 ms 100 10 ms 101 ID[A] ZthJC[K/W] DC 0.5 100 0.2 0.1 0.05 10-1 0.02 10-1 0.01 single pulse 10-2 10-1 100 101 102 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.4,2020-08-14 OptiMOSTMPower-MOSFET,25V BSC018NE2LS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 4 5V 10 V 350 4.5 V 300 3 3.5 V 3.3 V 200 RDS(on)[mΩ] ID[A] 250 3.2 V 150 4V 2 4.5 V 5V 7V 8V 3V 10 V 100 1 2.8 V 50 0 0 1 2 0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 400 300 250 320 200 ID[A] gfs[S] 240 150 160 100 150 °C 80 50 25 °C 0 0 1 2 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.4,2020-08-14 OptiMOSTMPower-MOSFET,25V BSC018NE2LS Diagram10:Typ.gatethresholdvoltage 2.5 2.5 2.0 2.0 1.5 1.5 VGS(th)[V] RDS(on)[mΩ] Diagram9:Drain-sourceon-stateresistance 1.0 0.5 1.0 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 -55 °C 25 °C 125 °C 150 °C Ciss Coss 102 Crss 102 IF[A] C[pF] 103 101 0 5 10 15 101 20 25 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.4,2020-08-14 OptiMOSTMPower-MOSFET,25V BSC018NE2LS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 12 V 10 5V 20 V 25 °C 100 °C 8 VGS[V] IAV[A] 125 °C 101 6 4 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 28 27 26 VBR(DSS)[V] 25 24 23 22 21 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.4,2020-08-14 OptiMOSTMPower-MOSFET,25V BSC018NE2LS 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.4,2020-08-14 OptiMOSTMPower-MOSFET,25V BSC018NE2LS PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 2 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 11 Rev.2.4,2020-08-14 OptiMOS TM Power-MOSFET , 25 V BSC018NE2LS Dimension in mm Figure 3 Final Data Sheet Outline Tape (TDSON-8) 12 Rev. 2.4, 2020-08-14 OptiMOS TM Power-MOSFET , 25 V BSC018NE2LS Revision History BSC018NE2LS Revision: 2020-08-14, Rev. 2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2019-11-04 Update package drawings 2.4 2020-08-14 Update current rating Trademarks All referenced product or service names and trademarks are the property of their respective owners. We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: erratum@infineon.com Published by Infineon Technologies AG 81726 München, Germany © 2020 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.4, 2020-08-14