BSC036NE7NS3GATMA1

BSC036NE7NS3G MOSFET OptiMOSTM3Power-Transistor,75V SuperSO8 8 Features •Optimizedtechnologyforsynchronousrectification •IdealforhighfrequencyswitchingandDC/DCconverters •ExcellentgatechargexRDS(on)product(FOM) •Superiorthermalresistance •N-channel,normallevel •100%avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 75 V RDS(on),max 3.6 mΩ ID 159 A Type/OrderingCode Package BSC036NE7NS3 G PG-TDSON-8 1) 5 6 2 Marking 036NE7NS 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2020-07-29 OptiMOSTM3Power-Transistor,75V BSC036NE7NS3G TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2020-07-29 OptiMOSTM3Power-Transistor,75V BSC036NE7NS3G 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current1) Values Unit Note/TestCondition 159 101 20 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W2) - 636 A TC=25°C - - 260 mJ ID=50A,RGS=25Ω VGS -20 - 20 V - Power dissipation Ptot - - 156 2.5 - TC=25°C TA=25°C,RthJA=50K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current3) ID,pulse - Avalanche energy, single pulse EAS Gate source voltage 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 0.8 K/W - Thermal resistance, junction - case, top RthJC - - 18 K/W - Device on PCB, minimal footprint RthJA - - 62 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 50 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information Final Data Sheet 3 Rev.2.1,2020-07-29 OptiMOSTM3Power-Transistor,75V BSC036NE7NS3G 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA 3.1 3.8 V VDS=VGS,ID=110µA - 0.1 10 1 100 µA VDS=75V,VGS=0V,Tj=25°C VDS=75V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.9 3.6 mΩ VGS=10V,ID=50A Gate resistance RG - 2.7 - Ω - Transconductance gfs 50 100 - S |VDS|>2|ID|RDS(on)max,ID=50A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 75 - Gate threshold voltage VGS(th) 2.3 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 4400 - pF VGS=0V,VDS=37.5V,f=1MHz Output capacitance Coss - 990 - pF VGS=0V,VDS=37.5V,f=1MHz Reverse transfer capacitance Crss - 48 - pF VGS=0V,VDS=37.5V,f=1MHz Turn-on delay time td(on) - 14 - ns VDD=37.5V,VGS=10V,ID=25A, RG=1.6Ω Rise time tr - 18 - ns VDD=37.5V,VGS=10V,ID=25A, RG=1.6Ω Turn-off delay time td(off) - 38 - ns VDD=37.5V,VGS=10V,ID=25A, RG=1.6Ω Fall time tf - 10 - ns VDD=37.5V,VGS=10V,ID=25A, RG=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 22.1 - nC VDD=37.5V,ID=50A,VGS=0to10V Gate to drain charge Qgd - 12.6 - nC VDD=37.5V,ID=50A,VGS=0to10V Switching charge Qsw - 21.0 - nC VDD=37.5V,ID=50A,VGS=0to10V Gate charge total Qg - 63.4 - nC VDD=37.5V,ID=50A,VGS=0to10V Gate plateau voltage Vplateau - 5.0 - V VDD=37.5V,ID=50A,VGS=0to10V Output charge Qoss - 65 - - VDD=37.5V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.1,2020-07-29 OptiMOSTM3Power-Transistor,75V BSC036NE7NS3G Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 130 A TC=25°C - 636 A TC=25°C - 0.9 1.2 V VGS=0V,IF=50A,Tj=25°C trr - 44 - ns VR=37.5V,IF=25A,diF/dt=100A/µs Qrr - 64 - nC VR=37.5V,IF=25A,diF/dt=100A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery time Reverse recovery charge Final Data Sheet 5 Rev.2.1,2020-07-29 OptiMOSTM3Power-Transistor,75V BSC036NE7NS3G 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 175 175 150 150 125 125 100 100 ID[A] Ptot[W] Diagram1:Powerdissipation 75 75 50 50 25 25 0 0 25 50 75 100 125 150 0 175 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 10 100 1 µs 10 µs 0.5 100 µs 102 1 ms ZthJC[K/W] ID[A] 0.2 10 ms 101 DC 10-1 0.1 0.05 100 0.02 0.01 single pulse 10-1 10-1 100 101 102 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.1,2020-07-29 OptiMOSTM3Power-Transistor,75V BSC036NE7NS3G Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 12 360 7V 10 V 10 320 5V 280 8 RDS(on)[mΩ] ID[A] 240 200 6V 160 6V 6 7V 4 120 10 V 5.5 V 80 2 40 0 5.5 V 5V 4.5 V 0 1 2 0 3 0 100 200 VDS[V] 300 400 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 200 160 160 120 120 ID[A] gfs[S] 200 80 80 40 40 150 °C 25 °C 0 0 2 4 6 8 0 0 VGS[V] 80 120 160 200 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.1,2020-07-29 OptiMOSTM3Power-Transistor,75V BSC036NE7NS3G Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 8 4 1100 µA 6 3 110 µA VGS(th)[V] RDS(on)[mΩ] max 4 2 typ 2 1 0 -60 -20 20 60 100 140 0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=50A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss 103 102 IF[A] C[pF] Coss 102 101 Crss 101 0 15 30 45 60 75 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 8 Rev.2.1,2020-07-29 OptiMOSTM3Power-Transistor,75V BSC036NE7NS3G Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 40 V 10 20 V 60 V 8 25 °C VGS[V] IAV[A] 100 °C 125 °C 101 6 4 2 100 10-1 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 60 70 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=50Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 90 85 VBR(DSS)[V] 80 75 70 65 60 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.1,2020-07-29 OptiMOSTM3Power-Transistor,75V BSC036NE7NS3G 5PackageOutlines Figure1OutlinePG-TDSON-8,dimensionsinmm/inches Final Data Sheet 10 Rev.2.1,2020-07-29 OptiMOSTM3Power-Transistor,75V BSC036NE7NS3G RevisionHistory BSC036NE7NS3 G Revision:2020-07-29,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2020-07-29 Update current rating Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2020-07-29