BSC320N20NS3GATMA1

BSC320N20NS3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) V DS 200 V R DS(on),max 32 mΩ ID 36 A • Very low on-resistance R DS(on) • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency switching and synchronous rectification Type BSC320N20NS3 G Package PG-TDSON-8 Marking 320N20NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 36 T C=100 °C 24 Unit A Pulsed drain current2) I D,pulse T C=25 °C 144 Avalanche energy, single pulse E AS I D=36 A, R GS=25 Ω 190 mJ Reverse diode dv /dt dv /dt 10 kV/µs Gate source voltage V GS ±20 V Power dissipation P tot 125 W Operating and storage temperature T j, T stg -55 ... 150 °C T C=25 °C IEC climatic category; DIN IEC 68-1 1) 2) Rev. 2.3 55/150/56 J-STD20 and JESD22 See figure 3 page 1 2011-05-20 BSC320N20NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 1 minimal footprint - - 75 6 cm2 cooling area 3) - - 50 200 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=90 µA 2 3 4 Zero gate voltage drain current I DSS V DS=160 V, V GS=0 V, T j=25 °C - 0.1 1 V DS=160 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=36 A - 27 32 mΩ Gate resistance RG - 2.5 - Ω Transconductance g fs 29 58 - S |V DS|>2|I D|R DS(on)max, I D=36 A 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 2.3 page 2 2011-05-20 BSC320N20NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 1770 2350 - 135 180 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 4 - Turn-on delay time t d(on) - 14 - Rise time tr - 9 - Turn-off delay time t d(off) - 22 - Fall time tf - 4 - Gate to source charge Q gs - 8 - Gate to drain charge Q gd - 3 - - 5 - V GS=0 V, V DS=100 V, f =1 MHz V DD=100 V, V GS=10 V, I D=18 A, R G=1.6 Ω pF ns Gate Charge Characteristics 4) V DD=100 V, I D=18 A, V GS=0 to 10 V nC Switching charge Q sw Gate charge total Qg - 22 29 Gate plateau voltage V plateau - 4.4 - Output charge Q oss - 54 72 nC - - 36 A - - 144 - 0.9 1.2 V - 105 - ns - 429 - nC V DD=100 V, V GS=0 V V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) Rev. 2.3 T C=25 °C V GS=0 V, I F=36 A, T j=25 °C V R=100 V, I F=18A, di F/dt =100 A/µs See figure 16 for gate charge parameter definition page 3 2011-05-20 BSC320N20NS3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS≥10 V 140 40 120 30 80 I D [A] P tot [W] 100 20 60 40 10 20 0 0 0 50 100 150 200 0 50 T C [°C] 100 150 200 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 1 µs 10 2 10 µs 100 Z thJC [K/W] I D [A] 100 µs 1 ms 101 10 ms 0.5 0.2 0.1 10-1 DC 0.05 0.02 100 0.01 single pulse 10-2 10-1 10 -1 10 0 10 1 10 2 10 3 10-4 10-3 10-2 10-1 100 t p [s] V DS [V] Rev. 2.3 10-5 page 4 2011-05-20 BSC320N20NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 60 60 10 V 7V 50 50 5V 4.5 V 5V 40 R DS(on) [mΩ] I D [A] 40 30 20 7V 30 10 V 20 4.5 V 10 10 0 0 0 1 2 3 4 5 0 10 20 V DS [V] 30 40 50 60 70 I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 50 80 70 40 60 50 I D [A] g fs [S] 30 40 20 30 20 150 °C 10 10 25 °C 0 0 0 2 4 6 8 Rev. 2.3 0 25 50 75 I D [A] V GS [V] page 5 2011-05-20 BSC320N20NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=36 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 100 4 3.5 80 900 µA 3 60 V GS(th) [V] R DS(on) [mΩ] 90 µA 2.5 98% 40 2 1.5 typ 1 20 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 103 Ciss 103 25 °C Coss 10 I F [A] C [pF] 102 2 150 °C 25°C, 98% 101 101 Crss 150°C, 98% 100 0 40 80 120 160 0.5 1 1.5 2 V SD [V] V DS [V] Rev. 2.3 0 page 6 2011-05-20 BSC320N20NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=18 A pulsed parameter: T j(start) parameter: V DD 100 10 8 160 V 25 °C 10 V GS [V] I AS [A] 100 V 6 100 °C 125 °C 40 V 4 2 1 0 1 10 100 1000 0 5 10 15 20 25 Q gate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 230 V GS Qg V BR(DSS) [V] 220 210 V g s(th) 200 190 Q g(th) Q sw Q gs 180 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev. 2.3 page 7 2011-05-20 BSC320N20NS3 G PG-TDSON-8: Outline Rev. 2.3 page 8 2011-05-20 BSC320N20NS3 G Published by Infineon Technologies AG 81726 Munich, Germany © 2009 Infineon Technologies AG All Rights Reserved. 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Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.3 page 9 2011-05-20