BSC0904NSIATMA1

BSC0904NSI MOSFET OptiMOSTMPower-MOSFET,30V SuperSO8 8 Features •OptimizedSyncFETforhighperformancebuckconverter •IntegratedmonolithicSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 30 V RDS(on),max 3.7 mΩ ID 78 A QOSS 12 nC QG(0V..10V) 17 nC 5 6 2 3 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSC0904NSI PG-TDSON-8 0904NSI - 1) 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2019-11-12 OptiMOSTMPower-MOSFET,30V BSC0904NSI TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 2 Rev.2.4,2019-11-12 OptiMOSTMPower-MOSFET,30V BSC0904NSI 1Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 78 49 66 41 20 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 312 A TC=25°C - - 30 A TC=25°C EAS - - 14 mJ ID=30A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 37 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 3.4 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See figure 3 for more detailed information 3) See figure 13 for more detailed information Final Data Sheet 3 Rev.2.4,2019-11-12 OptiMOSTMPower-MOSFET,30V BSC0904NSI 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=10mA 15 - mV/K ID=10mA,referencedto25°C 1.2 - 2 V VDS=VGS,ID=250µA IDSS - 1 0.5 - mA VDS=24V,VGS=0V VDS=24V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 4.2 3.1 5.2 3.7 mΩ VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG 0.5 0.9 1.8 Ω - Transconductance gfs 43 86 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. 30 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Input capacitance Values Min. Typ. Max. Ciss - 1100 1500 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 460 610 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 64 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 3.3 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Rise time tr - 4.4 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Turn-off delay time td(off) - 16 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Fall time tf - 3.0 - ns VDD=15V,VGS=10V,ID=30A, RG=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 2.9 3.8 nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 1.7 2.3 nC VDD=15V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 2.9 3.8 nC VDD=15V,ID=30A,VGS=0to4.5V Switching charge Qsw - 4.1 5.4 nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 8.5 11.3 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.7 - V VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 17 22 nC VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 6.8 9.0 nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 12 16.5 nC VDD=15V,VGS=0V 1) See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.4,2019-11-12 OptiMOSTMPower-MOSFET,30V BSC0904NSI Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 37 A TC=25°C - 148 A TC=25°C - 0.56 0.7 V VGS=0V,IF=3A,Tj=25°C - 2 - nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.4,2019-11-12 OptiMOSTMPower-MOSFET,30V BSC0904NSI 4Electricalcharacteristicsdiagrams Diagram2:Draincurrent 40 80 35 70 30 60 25 50 ID[A] Ptot[W] Diagram1:Powerdissipation 20 40 15 30 10 20 5 10 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 10 µs 102 0.5 100 µs 100 ZthJC[K/W] ID[A] 0.2 1 ms 101 10 ms 0.1 0.05 0.02 10-1 10-1 10-1 0.01 DC 100 single pulse 100 101 102 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.4,2019-11-12 OptiMOSTMPower-MOSFET,30V BSC0904NSI Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 300 7 5V 4.5 V 3.2 V 6 250 10 V 3.5 V 200 4V RDS(on)[mΩ] ID[A] 5 4V 150 3.5 V 4.5 V 5V 4 7V 8V 3 10 V 100 2 3.2 V 50 3V 1 2.8 V 0 0 1 2 0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 300 140 120 250 100 200 gfs[S] ID[A] 80 150 60 100 40 50 20 150 °C 0 0 1 2 25 °C 3 4 5 0 0 10 VGS[V] 30 40 50 60 70 80 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 20 gfs=f(ID);Tj=25°C 7 Rev.2.4,2019-11-12 OptiMOSTMPower-MOSFET,30V BSC0904NSI Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 7 2.5 6 2.0 5 1.5 VGS(th)[V] RDS(on)[mΩ] 4 typ 3 1.0 2 0.5 1 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=10mA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 -55 °C 25 °C 125 °C 150 °C 102 Ciss 103 IF[A] C[pF] Coss 101 102 Crss 100 101 0 10 20 30 10-1 0.0 0.2 VDS[V] 0.6 0.8 1.0 1.2 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 8 Rev.2.4,2019-11-12 OptiMOSTMPower-MOSFET,30V BSC0904NSI Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 15 V 10 6V 24 V 25 °C 1 10 8 VGS[V] IAV[A] 100 °C 125 °C 100 6 4 2 10-1 100 101 102 103 tAV[µs] 0 0 5 10 15 20 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Typ.drain-sourceleakagecurrent Diagram Gate charge waveforms -2 10 10-3 125 °C 10-4 IDSS[A] 100 °C 75 °C 10-5 10-6 25 °C 10-7 0 5 10 15 20 25 VDS[V] IDSS=f(VDS);VGS=0V;parameter:Tj Final Data Sheet 9 Rev.2.4,2019-11-12 OptiMOSTMPower-MOSFET,30V BSC0904NSI 5PackageOutlines DOCUMENT NO. Z8B00003332 REVISION 07 DIMENSION A A1 b D D1 D2 E E1 E2 e L M MILLIMETERS MIN. MAX. 0.90 1.20 0.15 0.35 0.34 0.54 4.80 5.35 3.90 4.40 0.03 0.23 5.70 6.10 5.90 6.42 3.88 4.31 1.27 0.45 0.71 0.45 0.69 SCALE 10:1 0 1 2 3mm EUROPEAN PROJECTION ISSUE DATE 06.06.2019 Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 10 Rev.2.4,2019-11-12 OptiMOSTMPower-MOSFET,30V BSC0904NSI Dimension in mm Figure2OutlineTape(TDSON-8) Final Data Sheet 11 Rev.2.4,2019-11-12 OptiMOSTMPower-MOSFET,30V BSC0904NSI PG-TDSON-8: RecommenGHd BoDrdpads & Apertures 1.905 1.905 1.27 3x 0.6 1.27 3x copper Figure 3 Final Data Sheet 1.6 0.2 1.27 3x 0.825 2.863 0.5 0.925 2.863 1.27 3x 1.905 0.875 1.5 0.75 0.2 2.9 4.455 3.325 0.8 0.5 1.5 0.4 1.905 stencil apertures solder mask all dimensions in mm Outline Boardpads (TDSON-8), dimensions in mm 12 Rev.2.4,2019-11-12 OptiMOS TM Power-MOSFET , 30 V BSC0904NSI Revision History BSC0904NSI Revision: 2019-11-12, Rev. 2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.4 2019-11-12 Update package drawings Trademarks All referenced product or service names and trademarks are the property of their respective owners. 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The Infineon Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.4, 2019-11-12