BSC0503NSIATMA1

MOSFET MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-MOSFET,30V BSC0503NSI DataSheet Rev.2.0 Final PowerManagement&Multimarket OptiMOSTM5Power-MOSFET,30V BSC0503NSI 1Description SuperSO8 8 Features •Optimizedforhighperformancebuckconverters •MonolithicintegratedSchottky-likediode •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Value Unit VDS 30 V RDS(on),max 3.0 mΩ ID 88 A QOSS 10.6 nC QG(0V..4.5V) 7.1 nC 5 6 2 3 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSC0503NSI PG-TDSON-8 0503NSI - 1) 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 J-STD20 and JESD22 Final Data Sheet 2 Rev.2.0,2015-07-13 OptiMOSTM5Power-MOSFET,30V BSC0503NSI TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 3 Rev.2.0,2015-07-13 OptiMOSTM5Power-MOSFET,30V BSC0503NSI 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 88 55 79 50 22 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=50K/W1) - 352 A TC=25°C - - 40 A TC=25°C EAS - - 10 mJ ID=40A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 36 2.5 W TC=25°C TA=25°C,RthJA=50K/W1) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current Pulsed drain current2) 3) 3Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case, bottom Values Min. Typ. Max. RthJC - - 3.5 K/W - Thermal resistance, junction - case, top RthJC - - 20 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 50 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information Final Data Sheet 4 Rev.2.0,2015-07-13 OptiMOSTM5Power-MOSFET,30V BSC0503NSI 4Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Breakdown voltage temperature coefficient Values Unit Note/TestCondition - V VGS=0V,ID=10mA 15 - mV/K ID=10mA,referencedto25°C 1.2 - 2 V VDS=VGS,ID=250µA IDSS - 0.3 0.5 - mA VDS=24V,VGS=0V,Tj=25°C VDS=24V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 3.0 2.3 3.7 3.0 mΩ VGS=4.5V,ID=30A VGS=10V,ID=30A Gate resistance RG - 1.4 2.3 Ω - Transconductance gfs 60 120 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. 30 - dV(BR)DSS/dTj - Gate threshold voltage VGS(th) Zero gate voltage drain current Table5Dynamiccharacteristics Parameter Symbol Values Min. Typ. Max. Ciss - 960 1300 pF VGS=0V,VDS=15V,f=1MHz Output capacitance Coss - 330 450 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 36 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 3 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 3 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 16 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 2 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Input capacitance1) 1) 1) Defined by design. Not subject to production test Final Data Sheet 5 Rev.2.0,2015-07-13 OptiMOSTM5Power-MOSFET,30V BSC0503NSI Table6Gatechargecharacteristics1) Parameter Symbol Gate to source charge Values Unit Note/TestCondition - nC VDD=15V,ID=30A,VGS=0to4.5V 1.5 - nC VDD=15V,ID=30A,VGS=0to4.5V - 1.8 - nC VDD=15V,ID=30A,VGS=0to4.5V Qsw - 2.8 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 7.1 9.5 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.6 - V VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 15 20 nC VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 6.5 - nC VDS=0.1V,VGS=0to4.5V Qoss - 10.6 14.3 nC VDD=15V,VGS=0V Unit Note/TestCondition Min. Typ. Max. Qgs - 2.5 Gate charge at threshold Qg(th) - Gate to drain charge Qgd Switching charge 2) 2) Output charge Table7Reversediode Parameter Symbol Diode continuous forward current Values Min. Typ. Max. IS - - 36 A TC=25°C Diode pulse current IS,pulse - - 352 A TC=25°C Diode forward voltage VSD - 0.54 0.65 V VGS=0V,IF=4A,Tj=25°C Reverse recovery charge Qrr - 12 - nC VR=15V,IF=IS,diF/dt=400A/µs 1) 2) See ″Gate charge waveforms″ for parameter definition Defined by design. Not subject to production test Final Data Sheet 6 Rev.2.0,2015-07-13 OptiMOSTM5Power-MOSFET,30V BSC0503NSI 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 40 100 35 80 30 60 ID[A] Ptot[W] 25 20 40 15 10 20 5 0 0 40 80 120 0 160 0 40 80 TC[°C] 120 160 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 0.5 10 µs 102 100 101 0.2 0.1 ZthJC[K/W] ID[A] 100 µs 1 ms 10 ms 0.05 0.02 10-1 0.01 single pulse DC 100 10-1 10-1 10-2 100 101 102 10-3 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 7 Rev.2.0,2015-07-13 OptiMOSTM5Power-MOSFET,30V BSC0503NSI Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 6 10 V 5V 5 4V 300 3.2 V 4 3.5 V 200 RDS(on)[mΩ] ID[A] 4.5 V 3.5 V 4V 4.5 V 5V 7V 3 8V 10 V 2 3.2 V 100 3V 1 2.8 V 0 0 1 2 0 3 0 10 20 VDS[V] 30 RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 320 320 240 240 gfs[S] ID[A] ID=f(VDS);Tj=25°C;parameter:VGS 160 80 50 200 250 160 80 150 °C 0 40 ID[A] 0 1 2 25 °C 3 4 5 0 0 VGS[V] 100 150 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 50 gfs=f(ID);Tj=25°C 8 Rev.2.0,2015-07-13 OptiMOSTM5Power-MOSFET,30V BSC0503NSI Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 4.0 2.5 3.5 2.0 3.0 10 mA 1.5 typ VGS(th)[V] RDS(on)[mΩ] 2.5 2.0 1.5 1.0 1.0 0.5 0.5 0.0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=30A;VGS=10V VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 -55 °C 25 °C 125 °C 150 °C 102 Ciss IF[A] C[pF] 103 Coss 101 102 100 Crss 101 0 10 20 30 10-1 0.0 VDS[V] 0.8 1.2 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.4 IF=f(VSD);parameter:Tj 9 Rev.2.0,2015-07-13 OptiMOSTM5Power-MOSFET,30V BSC0503NSI Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 102 12 15 V 10 6V 8 24 V VGS[V] IAV[A] 25 °C 101 100 °C 4 125 °C 100 100 6 2 101 102 103 0 0 tAV[µs] 4 8 12 16 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Typ.drain-sourceleakagecurrent Gate charge waveforms 10-3 125 °C 10-4 100 °C IDSS[A] 75 °C 10-5 10-6 10-7 25 °C 0 5 10 15 20 25 VDS[V] IDSS=f(VDS);VGS=0V;parameter:Tj Final Data Sheet 10 Rev.2.0,2015-07-13 OptiMOSTM5Power-MOSFET,30V BSC0503NSI 6PackageOutlines   Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 11 Rev.2.0,2015-07-13 OptiMOSTM5Power-MOSFET,30V BSC0503NSI Dimension in mm Figure2OutlineTDSON-8Tape Final Data Sheet 12 Rev.2.0,2015-07-13 OptiMOSTM5Power-MOSFET,30V BSC0503NSI RevisionHistory BSC0503NSI Revision:2015-07-13,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-07-13 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 13 Rev.2.0,2015-07-13