BSC13DN30NSFDATMA1

BSC13DN30NSFD MOSFET OptiMOSTM3Power-Transistor,300V SuperSO8 8 Features •N-channel,normallevel •175°Crated •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhigh-frequencyswitchingandsynchronousrectification Value Unit VDS 300 V RDS(on),max 130 mΩ ID 16 A Type/OrderingCode Package BSC13DN30NSFD PG-TDSON-8 1) 5 6 2 Marking 13DN30NF 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,300V BSC13DN30NSFD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,300V BSC13DN30NSFD 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 16 14 A TC=25°C TC=100°C - 64 A TC=25°C - - 56 mJ ID=14.4A,RGS=25Ω dv/dt - - 60 kV/µs ID=36A,VDS=150V, di/dt=1000A/µs,Tj,max=175°C Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 150 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Reversediodepeakdv/dt 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.6 1 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 75 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area2) - - 50 K/W - Unit Note/TestCondition 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 300 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=90µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=240V,VGS=0V,Tj=25°C VDS=240V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 114 130 mΩ VGS=10V,ID=16A Gate resistance RG - 3.3 5 Ω - Transconductance gfs 19 38 - S |VDS|>2|ID|RDS(on)max,ID=16A 1) See Diagram 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,300V BSC13DN30NSFD Table5Dynamiccharacteristics Parameter Symbol Values Unit Note/TestCondition 2450 pF VGS=0V,VDS=150V,f=1MHz 76 102 pF VGS=0V,VDS=150V,f=1MHz - 5.4 - pF VGS=0V,VDS=150V,f=1MHz td(on) - 8.0 - ns VDD=150V,VGS=10V,ID=8A, RG,ext=1.6Ω Rise time tr - 4.0 - ns VDD=150V,VGS=10V,ID=8A, RG,ext=1.6Ω Turn-off delay time td(off) - 19 - ns VDD=150V,VGS=10V,ID=8A, RG,ext=1.6Ω Fall time tf - 4.0 - ns VDD=150V,VGS=10V,ID=8A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 1840 Output capacitance Coss - Reverse transfer capacitance1) Crss Turn-on delay time Input capacitance 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 8.0 - nC VDD=150V,ID=16A,VGS=0to10V Gate to drain charge Qgd - 2.9 - nC VDD=150V,ID=16A,VGS=0to10V Switching charge Qsw - 5.4 - nC VDD=150V,ID=16A,VGS=0to10V Gate charge total Qg - 23 30 nC VDD=150V,ID=16A,VGS=0to10V Gate plateau voltage Vplateau - 4.4 - V VDD=150V,ID=16A,VGS=0to10V Output charge Qoss - 48 - nC VDD=150V,VGS=0V Unit Note/TestCondition 1) Table7Reversediode Parameter Symbol Diode continous forward current Values Min. Typ. Max. IS - - 16 A TC=25°C IS,pulse - - 64 A TC=25°C Diode hard commutation current IS,hard - - 16 A TC=25°C,diF/dt=1000A/µs Diode forward voltage VSD - 0.9 1.2 V VGS=0V,IF=16A,Tj=25°C trr - 111 222 ns VR=150V,IF=12.6A,diF/dt=100A/µs Qrr - 249 498 nC VR=150V,IF=12.6A,diF/dt=100A/µs Diode pulse current3) 4) 1) Reverse recovery time 1) Reverse recovery charge 1) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition 3) Diode pulse current is defined by thermal and/or package limits 4) Maximum allowed hard-commutated current through diode at di/dt=1000 A/µs 2) Final Data Sheet 4 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,300V BSC13DN30NSFD 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 200 20 16 150 ID[A] Ptot[W] 12 100 8 50 4 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 2 101 10 1 µs 10 µs 100 µs 1 100 10 ID[A] 0.5 ZthJC[K/W] 1 ms 10 ms DC 100 0.2 0.1 10-1 0.05 0.02 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,300V BSC13DN30NSFD Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 40 260 240 220 10 V 200 30 7V 180 160 RDS(on)[mΩ] ID[A] 5V 20 4.5 V 4.5 V 140 5V 7V 120 10 V 100 80 10 60 40 20 0 0 1 2 3 4 0 5 0 10 VDS[V] 20 30 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 25 60 50 20 40 ID[A] gfs[S] 15 30 10 175 °C 20 5 10 25 °C 0 0 2 4 6 8 0 0 VGS[V] 20 30 40 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 10 gfs=f(ID);Tj=25°C 6 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,300V BSC13DN30NSFD Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 440 4.0 400 3.5 360 280 90 µA 2.5 240 200 VGS(th)[V] RDS(on)[mΩ] 900 µA 3.0 320 98% 2.0 1.5 160 typ 120 1.0 80 0.5 40 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=16A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 102 10 25 °C 175 °C 25°C, 98% 175°C, 98% Ciss 103 IF[A] C[pF] Coss 102 101 Crss 1 10 100 0 40 80 120 160 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,300V BSC13DN30NSFD Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 8 240 V 150 V VGS[V] IAS[A] 6 101 25 °C 60 V 4 100 °C 2 150 °C 100 100 101 102 103 0 0 5 tAV[µs] 10 15 20 25 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=16Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 340 320 VBR(DSS)[V] 300 280 260 240 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,300V BSC13DN30NSFD 5PackageOutlines   Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 9 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,300V BSC13DN30NSFD   Figure2OutlineFootprint(TDSON-8) Final Data Sheet 10 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,300V BSC13DN30NSFD RevisionHistory BSC13DN30NSFD Revision:2016-12-05,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.2 2016-04-26 Release of Preliminary Datasheet 1.3 2016-05-13 Rev. 1.3 (preliminary datasheet) 2.0 2016-10-21 Release of final version 2.1 2016-12-05 Update Eas TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2016-12-05