BSC350N20NSFDATMA1

BSC350N20NSFD MOSFET OptiMOSTM3Power-Transistor,200V SuperSO8 8 Features •N-channel,normallevel •175°Crated •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhigh-frequencyswitchingandsynchronousrectification Value Unit VDS 200 V RDS(on),max 35 mΩ ID 35 A Type/OrderingCode Package BSC350N20NSFD PG-TDSON-8 1) 5 6 2 Marking 350N20NF 3 6 5 4 1 Table1KeyPerformanceParameters Parameter 7 3 2 4 7 8 1 S1 8D S2 7D S3 6D G4 5D RelatedLinks - J-STD20 and JESD22 Final Data Sheet 1 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,200V BSC350N20NSFD TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,200V BSC350N20NSFD 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Continuous drain current Values Unit Note/TestCondition 35 27 A TC=25°C TC=100°C - 140 A TC=25°C - - 97 mJ ID=27.2A,RGS=25Ω dv/dt - - 60 kV/µs ID=68A,VDS=100V, di/dt=1500A/µs,Tj,max=175°C Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 150 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 175 °C - Unit Note/TestCondition Min. Typ. Max. ID - - Pulsed drain current1) ID,pulse - Avalanche energy, single pulse EAS Reversediodepeakdv/dt 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Values Min. Typ. Max. RthJC - 0.6 1 K/W - Thermal resistance, junction - ambient, RthJA minimal footprint - - 75 K/W - Thermal resistance, junction - ambient, RthJA 6 cm2 cooling area2) - - 50 K/W - Unit Note/TestCondition 3Electricalcharacteristics Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Min. Typ. Max. V(BR)DSS 200 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2 3 4 V VDS=VGS,ID=90µA Zero gate voltage drain current IDSS - 0.1 10 1 100 µA VDS=160V,VGS=0V,Tj=25°C VDS=160V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 31 35 mΩ VGS=10V,ID=35A Gate resistance RG - 3.3 5 Ω - Transconductance gfs 29 57 - S |VDS|>2|ID|RDS(on)max,ID=35A 1) See Diagram 3 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) Final Data Sheet 3 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,200V BSC350N20NSFD Table5Dynamiccharacteristics Parameter Symbol Values Unit Note/TestCondition 2410 pF VGS=0V,VDS=100V,f=1MHz 137 182 pF VGS=0V,VDS=100V,f=1MHz - 5.4 - pF VGS=0V,VDS=100V,f=1MHz td(on) - 8.0 - ns VDD=100V,VGS=10V,ID=17A, RG,ext=1.6Ω Rise time tr - 4.8 - ns VDD=100V,VGS=10V,ID=17A, RG,ext=1.6Ω Turn-off delay time td(off) - 17 - ns VDD=100V,VGS=10V,ID=17A, RG,ext=1.6Ω Fall time tf - 4.8 - ns VDD=100V,VGS=10V,ID=17A, RG,ext=1.6Ω Unit Note/TestCondition Min. Typ. Max. Ciss - 1810 Output capacitance Coss - Reverse transfer capacitance1) Crss Turn-on delay time Input capacitance 1) Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge Values Min. Typ. Max. Qgs - 8.6 - nC VDD=100V,ID=35A,VGS=0to10V Gate to drain charge Qgd - 3.0 - nC VDD=100V,ID=35A,VGS=0to10V Switching charge Qsw - 6.2 - nC VDD=100V,ID=35A,VGS=0to10V Gate charge total Qg - 22 30 nC VDD=100V,ID=35A,VGS=0to10V Gate plateau voltage Vplateau - 4.7 - V VDD=100V,ID=35A,VGS=0to10V Output charge Qoss - 54 - nC VDD=100V,VGS=0V Unit Note/TestCondition 1) Table7Reversediode Parameter Symbol Diode continous forward current Values Min. Typ. Max. IS - - 35 A TC=25°C IS,pulse - - 140 A TC=25°C Diode hard commutation current IS,hard - - 68 A TC=25°C,diF/dt=1500A/µs Diode forward voltage VSD - 1.0 1.2 V VGS=0V,IF=35A,Tj=25°C trr - 70 140 ns VR=100V,IF=24A,diF/dt=100A/µs Qrr - 93 186 nC VR=100V,IF=24A,diF/dt=100A/µs Diode pulse current3) 4) 1) Reverse recovery time 1) Reverse recovery charge 1) Defined by design. Not subject to production test. See ″Gate charge waveforms″ for parameter definition 3) Diode pulse current is defined by thermal and/or package limits 4) Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs 2) Final Data Sheet 4 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,200V BSC350N20NSFD 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 200 40 35 150 30 ID[A] Ptot[W] 25 100 20 15 50 10 5 0 0 50 100 150 0 200 0 50 100 TC[°C] 150 200 TC[°C] Ptot=f(TC) ID=f(TC);VGS>=10V Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 102 10 µs 100 1 ms 101 0.5 ZthJC[K/W] ID[A] 100 µs 10 ms DC 0.2 0.1 10-1 0.05 0.02 0 10 0.01 single pulse 10-1 10-1 100 101 102 103 10-2 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 5 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,200V BSC350N20NSFD Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 60 60 10 V 50 4.5 V 50 7V 5V 5V 40 RDS(on)[mΩ] ID[A] 40 30 20 10 V 30 20 4.5 V 10 0 7V 10 0 1 2 3 4 0 5 0 10 20 30 VDS[V] 40 50 60 70 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 50 80 70 40 60 50 ID[A] gfs[S] 30 20 40 30 20 175 °C 10 10 25 °C 0 0 2 4 6 8 0 0 VGS[V] 50 75 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 25 gfs=f(ID);Tj=25°C 6 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,200V BSC350N20NSFD Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 120 4.0 3.5 100 900 µA 3.0 80 90 µA VGS(th)[V] RDS(on)[mΩ] 2.5 60 98% 2.0 1.5 40 typ 1.0 20 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=35A;VGS=10V VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 175 °C 25°C, 98% 175°C, 98% Ciss 103 Coss IF[A] C[pF] 102 2 10 101 101 Crss 100 0 40 80 120 160 100 0.0 0.5 VDS[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 1.0 1.5 2.0 VSD[V] IF=f(VSD);parameter:Tj 7 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,200V BSC350N20NSFD Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 10 8 160 V 100 V 25 °C 100 °C 101 40 V VGS[V] IAS[A] 6 4 150 °C 2 100 100 101 102 103 0 0 5 tAV[µs] 10 15 20 25 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=35Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Gate charge waveforms 230 220 VBR(DSS)[V] 210 200 190 180 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 8 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,200V BSC350N20NSFD 5PackageOutlines   Figure1OutlinePG-TDSON-8,dimensionsinmm Final Data Sheet 9 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,200V BSC350N20NSFD   Figure2OutlineFootprint(TDSON-8) Final Data Sheet 10 Rev.2.1,2016-12-05 OptiMOSTM3Power-Transistor,200V BSC350N20NSFD RevisionHistory BSC350N20NSFD Revision:2016-12-05,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 1.1 2016-05-04 Release of Preliminary Datasheet 1.2 2016-05-13 Rev. 1.2 (preliminary datasheet) 2.0 2016-10-21 Release of final version 2.1 2016-12-05 Update Eas TrademarksofInfineonTechnologiesAG AURIX™,C166™,CanPAK™,CIPOS™,CoolGaN™,CoolMOS™,CoolSET™,CoolSiC™,CORECONTROL™,CROSSAVE™,DAVE™,DI-POL™,DrBlade™, EasyPIM™,EconoBRIDGE™,EconoDUAL™,EconoPACK™,EconoPIM™,EiceDRIVER™,eupec™,FCOS™,HITFET™,HybridPACK™,Infineon™, ISOFACE™,IsoPACK™,i-Wafer™,MIPAQ™,ModSTACK™,my-d™,NovalithIC™,OmniTune™,OPTIGA™,OptiMOS™,ORIGA™,POWERCODE™, PRIMARION™,PrimePACK™,PrimeSTACK™,PROFET™,PRO-SIL™,RASIC™,REAL3™,ReverSave™,SatRIC™,SIEGET™,SIPMOS™,SmartLEWIS™, SOLIDFLASH™,SPOC™,TEMPFET™,thinQ™,TRENCHSTOP™,TriCore™. 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TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.1,2016-12-05