BSC160N10NS3G

Type BSC160N10NS3 G $(*'#$%TM3 Power-Transistor Product Summary 9 .1)+ )7% $ &- /$ # $ # # - ,3% /0)- , 9 # (!,,% * ,- /+ !**% 3% * VDS 100 V RDS(on),max 16 m# ID 42 A 9 5# % **% ,1'!1% # (!/'% 5 R DS(on) product (FOM) 9 % /6*- 4 - , /% 0)01!,# % R DS(on) PG-TDSON-8 9  8 - .% /!1),' 1% + .% /!12 /% 9 " &/% % *% !$ .*!1),'  -   # - + .*)!,1 9 2 !*)&)% $ !# # - /$ ),' 1-      1) for target application 9 !*- '% , &/% % !# # - /$ ),' 1-          Type Package Marking BSC160N10NS3 G PG-TDSON-8 160N10NS Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 42 T C=100 °C 27 T A=25 °C, R thJA=50 K/W 2) 8.8 Unit A Pulsed drain current3) I D,pulse T C=25 °C 168 Avalanche energy, single pulse E AS I D=33 A, R GS=25 # 50 mJ Gate source voltage V GS ±20 V Power dissipation P tot 60 W Operating and storage temperature T j, T stg -55 ... 150 °C T C=25 °C IEC climatic category; DIN IEC 68-1 Rev. 2.4 55/150/56 page 1 2009-10-30 BSC160N10NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - - 2.1 - - 50 100 - - Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction - ambient R thJA 6 cm2 cooling area2) K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA Gate threshold voltage V GS(th) V DS=V GS, I D=33 µA 2 2.7 3.5 Zero gate voltage drain current I DSS V DS=100 V, V GS=0 V, T j=25 °C - 0.01 1 V DS=100 V, V GS=0 V, T j=125 °C - 10 100 V µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - 1 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=33 A - 13.9 16 m# V GS=6 V, I D=16 A - 17.6 33 - 1.4 - # 21 42 - S Gate resistance RG Transconductance g fs 1) |V DS|>2|I D|R DS(on)max, I D=33 A J-STD20 and JESD22 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) see figure 3 Rev. 2.4 page 2 2009-10-30 BSC160N10NS3 G Parameter Values Symbol Conditions Unit min. typ. max. - 1300 1700 - 240 320 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 11 - Turn-on delay time t d(on) - 13 - Rise time tr - 15 - Turn-off delay time t d(off) - 22 - Fall time tf - 5 - Gate to source charge Q gs - 6 - Gate to drain charge Q gd - 3 - Switching charge Q sw - 5 - Gate charge total Qg - 19 25 Gate plateau voltage V plateau - 4.4 - Output charge Q oss - 25 33 nC - - 42 A - - 168 - 1 1.2 - 53 - 83 V GS=0 V, V DS=50 V, f =1 MHz V DD=50 V, V GS=10 V, I D=16 A, R G=1.6 # pF ns Gate Charge Characteristics4) V DD=50 V, I D=16 A, V GS=0 to 10 V V DD=50 V, V GS=0 V nC V Reverse Diode Diode continous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr 4) T C=25 °C V GS=0 V, I F=33 A, T j=25 °C V R=50 V, I F=16A, di F/dt =100 A/µs V ns - nC See figure 16 for gate charge parameter definition Rev. 2.4 page 3 2009-10-30 BSC160N10NS3 G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); V GS:  70 50 60 40 30 40 ID [A] Ptot [W] 50 30 20 20 10 10 0 0 0 40 80 120 160 0 40 80 TC [°C] 120 160 TC [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 103 101 100 ns 1 µs 102 0.5 10 µs 100 101 ZthJC [K/W] ID [A] 0.2 100 µs 1 ms 0.1 0.05 0.02 DC 10-1 0.01 single pulse 100 10-1 10-2 10-1 100 101 102 103 VDS [V] Rev. 2.4 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2009-10-30 BSC160N10NS3 G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 120 30 4.5 V 10 V 100 5V 25 7V 5.5 V 6V 6V 20 RDS(on) [m ] ID [A] 80 60 5.5 V 40 7V 15 10 V 10 5V 20 5 4.5 V 0 0 0 1 2 3 0 20 40 VDS [V] 60 80 100 80 100 ID [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C 80 80 60 60 gfs [S] ID [A] parameter: T j 40 20 20 150 °C 25 °C 0 0 0 1 2 3 4 5 6 7 VGS [V] Rev. 2.4 40 0 20 40 60 ID [A] page 5 2009-10-30 BSC160N10NS3 G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=33 A; V GS=10 V V GS(th)=f(T j); V GS=V DS parameter: I D 35 4 30 3.5 3 330 µA 2.5 20 VGS(th) [V] RDS(on) [m ] 25 98 % typ 15 33 µA 2 1.5 10 1 5 0.5 0 0 -60 -20 20 60 100 140 180 -60 -20 20 Tj [°C] 60 100 140 180 Tj [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 104 1000 Ciss 103 100 Coss IF [A] C [pF] 25 °C 102 150 °C, 98% 10 Crss 150 °C 101 25 °C, 98% 100 1 0 20 40 60 80 VDS [V] Rev. 2.4 0 0.5 1 1.5 2 VSD [V] page 6 2009-10-30 BSC160N10NS3 G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 # V GS=f(Q gate); I D=16 A pulsed parameter: T j(start) parameter: V DD 10 80 V 8 50 V VGS [V] 6 20 V 4 2 0 0 5 10 Qgate [nC] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=1 mA 110 VBR(DSS) [V] 105 100 95 90 -60 -20 20 60 Tj [°C] 100 140 180 15 20 BSC160N10NS3 G Package Outline: PG-TDSON-8 Rev. 2.4 page 8 2009-10-30 BSC160N10NS3 G Dimensions in mm Rev. 2.4 page 9 2009-10-30 BSC160N10NS3 G  ( % )-&.1, ! 3).- ' )5% - )- 3 ( )2 $ .# 4 , % -32( ! ++)- -. % 5% -3" % 1% ' ! 1$ % $ ! 2 ! 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