BSC220N20NSFD
MOSFET
OptiMOSTM3Power-Transistor,200V
TSON-8-3
8
7
Features
5
6
6
5
•N-channel,normallevel
•175°Crated
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
•Idealforhigh-frequencyswitchingandsynchronousrectification
ProductValidation:
Qualifiedforindustrialapplicationsaccordingtotherelevanttestsof
JEDEC47/20/22
Table1KeyPerformanceParameters
7
8
Pin 1
2
4
3
3
4
2
1
S1
8D
S2
7D
Parameter
Value
Unit
S3
6D
VDS
200
V
G4
5D
RDS(on),max
22
mΩ
ID
52
A
Type/OrderingCode
Package
Marking
RelatedLinks
BSC220N20NSFD
TSON-8-3
220N20F
-
Final Data Sheet
1
Rev.2.0,2018-03-14
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Final Data Sheet
2
Rev.2.0,2018-03-14
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
52
41
A
TC=25°C
TC=100°C
-
208
A
TC=25°C
-
-
214
mJ
ID=38A,RGS=25Ω
dv/dt
-
-
60
kV/µs
ID=52A,VDS=100V,
di/dt=1500A/µs,Tj,max=175°C
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
214
W
TC=25°C
Operating and storage temperature
Tj,Tstg
-55
-
175
°C
IEC climatic category;
DIN IEC 68-1: 55/175/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
Pulsed drain current1)
ID,pulse
-
Avalanche energy, single pulse
EAS
Reversediodepeakdv/dt
2Thermalcharacteristics
Tj=25 °C, unless otherwise specified
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Values
Min.
Typ.
Max.
RthJC
-
0.4
0.7
K/W
-
Thermal resistance, junction - ambient,
RthJA
minimal footprint
-
-
75
K/W
-
Thermal resistance, junction - ambient,
RthJA
6 cm2 cooling area2)
-
-
50
K/W
-
1)
See Diagram 3
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
2)
Final Data Sheet
3
Rev.2.0,2018-03-14
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
3Electricalcharacteristics
atTj=25°C,unlessotherwisespecified
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Unit
Note/TestCondition
-
V
VGS=0V,ID=1mA
3
4
V
VDS=VGS,ID=137µA
-
0.1
10
1
100
µA
VDS=160V,VGS=0V,Tj=25°C
VDS=160V,VGS=0V,Tj=125°C
IGSS
-
1
100
nA
VGS=20V,VDS=0V
RDS(on)
-
17.7
22
mΩ
VGS=10V,ID=52A
Gate resistance
RG
-
3.7
5.5
Ω
-
Transconductance
gfs
44
88
-
S
|VDS|>2|ID|RDS(on)max,ID=52A
Unit
Note/TestCondition
Min.
Typ.
Max.
V(BR)DSS
200
-
Gate threshold voltage
VGS(th)
2
Zero gate voltage drain current
IDSS
Gate-source leakage current
Drain-source on-state resistance
1)
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Min.
Typ.
Max.
Ciss
-
2770
3680
pF
VGS=0V,VDS=100V,f=1MHz
Coss
-
210
279
pF
VGS=0V,VDS=100V,f=1MHz
Reverse transfer capacitance
Crss
-
5.7
10
pF
VGS=0V,VDS=100V,f=1MHz
Turn-on delay time
td(on)
-
7
-
ns
VDD=100V,VGS=10V,ID=17A,
RG,ext=1.6Ω
Rise time
tr
-
7
-
ns
VDD=100V,VGS=10V,ID=17A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
28
-
ns
VDD=100V,VGS=10V,ID=17A,
RG,ext=1.6Ω
Fall time
tf
-
10
-
ns
VDD=100V,VGS=10V,ID=17A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Input capacitance1)
1)
Output capacitance
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Values
Min.
Typ.
Max.
Qgs
-
13.1
-
nC
VDD=100V,ID=52A,VGS=0to10V
Gate to drain charge
Qgd
-
4.4
7
nC
VDD=100V,ID=52A,VGS=0to10V
Switching charge
Qsw
-
9.2
-
nC
VDD=100V,ID=52A,VGS=0to10V
Gate charge total
Qg
-
34
43
nC
VDD=100V,ID=52A,VGS=0to10V
Gate plateau voltage
Vplateau
-
4.7
-
V
VDD=100V,ID=52A,VGS=0to10V
Output charge1)
Qoss
-
84
111
nC
VDD=100V,VGS=0V
Gate to source charge
1)
1)
1)
2)
Defined by design. Not subject to production test.
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.0,2018-03-14
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
Table7Reversediode
Parameter
Symbol
Values
Unit
Note/TestCondition
52
A
TC=25°C
-
208
A
TC=25°C
-
-
52
A
TC=25°C,diF/dt=1500A/µs
VSD
-
1.0
1.2
V
VGS=0V,IF=52A,Tj=25°C
Reverse recovery time3)
trr
-
89
-
ns
VR=100V,IF=12.5A,
diF/dt=100A/µs
Reverse recovery charge3)
Qrr
-
195
-
nC
VR=100V,IF=12.5A,
diF/dt=100A/µs
Min.
Typ.
Max.
IS
-
-
Diode pulse current
IS,pulse
-
Diode hard commutation current2)
IS,hard
Diode forward voltage
Diode continous forward current
1)
1)
Diode pulse current is defined by thermal and/or package limits
Maximum allowed hard-commutated current through diode at di/dt=1500 A/µs
3)
Defined by design. Not subject to production test.
2)
Final Data Sheet
5
Rev.2.0,2018-03-14
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
250
60
50
200
40
ID[A]
Ptot[W]
150
30
100
20
50
0
10
0
50
100
150
0
200
0
50
100
TC[°C]
150
200
TC[°C]
Ptot=f(TC)
ID=f(TC);VGS>=10V
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
3
101
10
1 µs
10 µs
102
100 µs
100
101
ZthJC[K/W]
ID[A]
1 ms
10 ms
0.5
0.2
DC
10-1
0.1
0.05
100
0.02
0.01
single pulse
10-1
10-1
100
101
102
103
10-2
10-5
10-4
VDS[V]
10-2
10-1
100
tp[s]
ID=f(VDS);TC=25°C;D=0;parameter:tp
Final Data Sheet
10-3
ZthJC=f(tp);parameter:D=tp/T
6
Rev.2.0,2018-03-14
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
60
60
10 V
7V
50
50
40
5V
30
RDS(on)[mΩ]
ID[A]
40
4.5 V
20
4.5 V
30
5V
7V
20
10 V
10
0
10
0
1
2
3
4
0
5
0
10
20
30
VDS[V]
40
50
60
70
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
80
110
100
70
90
60
80
70
gfs[S]
ID[A]
50
40
30
60
50
40
20
30
175 °C
20
10
10
25 °C
0
0
2
4
6
8
0
0
VGS[V]
50
75
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
25
gfs=f(ID);Tj=25°C
7
Rev.2.0,2018-03-14
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
120
4.0
3.5
100
1370 µA
3.0
80
137 µA
VGS(th)[V]
RDS(on)[mΩ]
2.5
60
2.0
1.5
40
98%
1.0
typ
20
0.5
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=55A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;parameter:ID
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
175 °C
25°C, 98%
175°C, 98%
Ciss
103
102
IF[A]
C[pF]
Coss
102
101
101
Crss
100
0
40
80
120
160
100
0.0
0.5
VDS[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
1.0
1.5
2.0
VSD[V]
IF=f(VSD);parameter:Tj
8
Rev.2.0,2018-03-14
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
10
8
160 V
25 °C
100 V
40 V
VGS[V]
IAS[A]
6
101
4
100 °C
2
150 °C
100
100
101
102
103
tAV[µs]
0
0
10
20
30
40
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=55Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Diagram Gate charge waveforms
230
220
VBR(DSS)[V]
210
200
190
180
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
9
Rev.2.0,2018-03-14
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
5PackageOutlines
DIMENSION
A
b
b1
c
D
D1
E
E1
E2
E3
e
K2
L
L1
L2
DOCUMENT NO.
Z8B00187559
MILLIMETERS
MIN.
MAX.
0.34
-
1.10
0.54
0.05
REVISION
01
SCALE
0.20
4.90
4.25
5.90
4.00
3.14
0.20
0
5.10
4.45
6.10
4.20
3.34
0.40
10:1
1
2mm
EUROPEAN PROJECTION
1.27
(0.37)
0.60
0.43
0.80
0.63
ISSUE DATE
14.12.2017
(0.25)
Figure1OutlineTSON-8-3,dimensionsinmm/inches
Final Data Sheet
10
Rev.2.0,2018-03-14
OptiMOSTM3Power-Transistor,200V
BSC220N20NSFD
RevisionHistory
BSC220N20NSFD
Revision:2018-03-14,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2018-03-14
Release of final version
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Final Data Sheet
11
Rev.2.0,2018-03-14
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