BSM50GB60DLC

Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage Kollektor-Dauergleichstrom DC-collector current Periodischer Kollektor Spitzenstrom repetitive peak collector current Gesamt-Verlustleistung total power dissipation Gate-Emitter-Spitzenspannung gate-emitter peak voltage Dauergleichstrom DC forward current Periodischer Spitzenstrom repetitive peak forw. current Grenzlastintegral der Diode 2 I t - value, Diode Isolations-Prüfspannung insulation test voltage tP= 1ms Tc= 80°C Tc= 25°C tP= 1ms, Tc= 80°C VCES IC,nom. IC ICRM 600 50 75 100 V A A A Tc= 25°C, Transistor Ptot 280 W VGES +/- 20V V IF 50 A IFRM 100 A VR= 0V, tp= 10ms, Tvj= 125°C I2t 450 A2s RMS, f= 50Hz, t= 1min. VISOL 2,5 kV Charakteristische Werte / Characteristic values Transistor / Transistor Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage Gate-Schwellenspannung gate threshold voltage Eingangskapazität input capacitance Rückwirkungskapazität reverse transfer capacitance Kollektor-Emitter Reststrom collector-emitter cut-off current Gate-Emitter Reststrom gate-emitter leakage current IC= 50A, VGE= 15V, Tvj= 25°C IC= 50A, VGE= 15V, Tvj= 125°C IC= 1,0mA, VCE= VGE, Tvj= 25°C VCE sat min. VGE(th) 4,5 typ. 1,95 2,20 5,5 max. 2,45 6,5 V V V f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V Cies - 2,2 - nF f= 1MHz, Tvj= 25°C, VCE= 25V, VGE= 0V VCE= 600V, VGE= 0V, Tvj= 25°C VCE= 600V, VGE= 0V, Tvj= 125°C VCE= 0V, VGE= 20V, Tvj= 25°C Cres - 0,2 1 1 - 500 400 nF µA mA nA ICES IGES - prepared by: Andreas Vetter approved by: Michael Hornkamp date of publication: 2000-04-26 revision: 1 1 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Charakteristische Werte / Characteristic values Transistor / Transistor IC= 50A, VCC= 300V Einschaltverzögerungszeit (ind. Last) turn on delay time (inductive load) VGE= ±15V, RG= 2,7Ω , Tvj= 25°C VGE= ±15V, RG= 2,7Ω , Tvj= 125°C IC= 50A, VCC= 300V Anstiegszeit (induktive Last) rise time (inductive load) VGE= ±15V, RG= 2,7Ω , Tvj= 25°C VGE= ±15V, RG= 2,7Ω , Tvj= 125°C IC= 50A, VCC= 300V Abschaltverzögerungszeit (ind. Last) turn off delay time (inductive load) VGE= ±15V, RG= 2,7Ω , Tvj= 25°C VGE= ±15V, RG= 2,7Ω , Tvj= 125°C IC= 50A, VCC= 300V Fallzeit (induktive Last) fall time (inductive load) VGE= ±15V, RG= 2,7Ω , Tvj= 25°C VGE= ±15V, RG= 2,7Ω , Tvj= 125°C Einschaltverlustenergie pro Puls turn-on energy loss per pulse Abschaltverlustenergie pro Puls turn-off energy loss per pulse Kurzschlußverhalten SC Data Modulinduktivität stray inductance module Modul-Leitungswiderstand, Anschlüsse - Chip lead resistance, terminals - chip Tc= 25°C IC= 50A, VCC= 300V, VGE= 15V RG= 2,7Ω , Tvj= 125°C, Lσ = 35nH IC= 50A, VCC= 300V, VGE= 15V RG= 2,7Ω , Tvj= 125°C, Lσ = 35nH tP ≤ 10µsec, VGE ≤ 15V Tvj≤125°C, VCC=360V, VCEmax= VCES -Lσ CE ·di/dt Eon tf 12 21 0,5 ns ns mJ td,off 120 130 ns ns tr 9 10 ns ns td,on 40 42 ns ns min. typ. max. Eoff - 1,0 - mJ ISC - 225 - A Lσ CE - 40 - nH RCC'+EE' - 1,2 - mΩ Charakteristische Werte / Characteristic values Diode / Diode Durchlaßspannung forward voltage IF= 50A, VGE= 0V, Tvj= 25°C IF= 50A, VGE= 0V, Tvj= 125°C IF= 50A, -diF/dt= 2900A/µsec Rückstromspitze peak reverse recovery current VR= 300V, VGE= -10V, Tvj= 25°C VR= 300V, VGE= -10V, Tvj= 125°C IF= 50A, -diF/dt= 2900A/µsec Sperrverzögerungsladung recoverred charge VR= 300V, VGE= -10V, Tvj= 25°C VR= 300V, VGE= -10V, Tvj= 125°C IF= 50A, -diF/dt= 2900A/µsec Abschaltenergie pro Puls reverse recovery energy VR= 300V, VGE= -10V, Tvj= 25°C VR= 300V, VGE= -10V, Tvj= 125°C Erec 1,5 mJ mJ Qr 3,4 5,6 µC µC IRM 88 92 A A VF min. - typ. 1,25 1,20 max. 1,6 V V 2 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Thermische Eigenschaften / Thermal properties min. Innerer Wärmewiderstand thermal resistance, junction to case Übergangs-Wärmewiderstand thermal resistance, case to heatsink Höchstzulässige Sperrschichttemperatur maximum junction temperature Betriebstemperatur operation temperature Lagertemperatur storage temperature Transistor / transistor, DC Diode / diode, DC pro Modul / per module λPaste= 1W/m*K / λgrease= 1W/m*K RthJC RthCK - typ. 0,03 max. 0,44 0,80 K/W K/W K/W Tvj - - 150 °C Top -40 - 125 °C Tstg -40 - 125 °C Mechanische Eigenschaften / Mechanical properties Gehäuse, siehe Anlage case, see appendix Innere Isolation internal insulation Kriechstrecke creepage insulation Luftstrecke clearance CTI comperative tracking index Anzugsdrehmoment für mech. Befestigung mounting torque Schraube M6 screw M6 M1 -15 Al2O3 15 mm 8,5 mm 275 5 +15 Nm % Gewicht weight G 180 g Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in combination with the belonging technical notes. 3 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Ausgangskennlinie (typisch) Output characteristic (typical) I C= f (VCE) VGE= 15V 100 90 80 70 Tvj = 25°C Tvj = 125°C IC [A] 60 50 40 30 20 10 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 VCE [V] Ausgangskennlinienfeld (typisch) Output characteristic (typical) 100 90 80 70 VGE = 8V VGE = 9V VGE = 10V VGE = 12V VGE = 15V VGE = 20V I C= f (VCE) Tvj= 125°C IC [A] 60 50 40 30 20 10 0 0,0 0,5 1,0 1,5 2,0 2,5 3,0 3,5 4,0 4,5 5,0 VCE [V] 4 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Übertragungscharakteristik (typisch) Transfer characteristic (typical) I C= f (VGE) VCE= 20V 100 90 Tvj = 25°C 80 70 Tvj = 125°C IC [A] 60 50 40 30 20 10 0 5 6 7 8 9 10 11 12 13 VGE [V] Durchlaßkennlinie der Inversdiode (typisch) Forward characteristic of inverse diode (typical) 100 90 80 70 Tvj = 25°C Tvj = 125°C I F= f (VF) IF [A] 60 50 40 30 20 10 0 0,0 0,2 0,4 0,6 0,8 1,0 1,2 1,4 1,6 VF [V] 5 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Schaltverluste (typisch) Switching losses (typical) E on= f (IC), Eoff= f (IC), Erec= f (IC) RG,on= 2,7Ω, =RG,off = 2,7Ω , VCC= 300V, Tvj= 125°C 2,5 Eon 2,0 Eoff Erec E [mJ] 1,5 1,0 0,5 0,0 0 20 40 60 80 100 IC [A] Schaltverluste (typisch) Switching losses (typical) 2,5 E on= f (RG), Eoff= f (RG), Erec= f (RG) IC= 50A , VCC= 300V , Tvj = 125°C 2,0 E [mJ] 1,5 1,0 0,5 Eon Eoff Erec 0,0 0 5 10 15 20 RG [Ω ] 6 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Transienter Wärmewiderstand Transient thermal impedance Z thJC = f (t) 1 0,1 ZthJC [K / W] Zth:IGBT 0,01 Zth:Diode 0,001 0,001 0,01 0,1 1 10 t [sec] i ri [K/kW] τi [sec] ri [K/kW] τi [sec] 1 18,6 0,0018 281,9 0,0487 2 230,6 0,0240 270,4 0,0169 3 155,1 0,0651 169,8 0,1069 4 35,7 0,6626 77,9 0,9115 : IGBT : IGBT : Diode : Diode Sicherer Arbeitsbereich (RBSOA) Reverse bias safe operation area (RBSOA) 120 VGE= +15V, R G,off = 2,7Ω, Tvj= 125°C 100 80 60 IC [A] 40 IC,Modul IC,Chip 20 0 0 100 200 300 400 500 600 700 VCE [V] 7 (8) BSM 50 GB 60 DLC 2000-02-08 Technische Information / Technical Information IGBT-Module IGBT-Modules BSM 50 GB 60 DLC Gehäusemaße / Schaltbild Package outline / Circuit diagram 13 10 M5 2,8 x 0,5 6 1 17 2 6 3 6 7 23 80 94 23 17 5 4 6 7 1 3 5 2 4 8 (8) BSM 50 GB 60 DLC 2000-02-08 Terms & Conditions of Usage Attention The present product data is exclusively subscribed to technically experienced staff. 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