BSZ0901NS

BSZ0901NS MOSFET OptiMOSTMPower-MOSFET,30V TSDSON-8FL(S3O8) Features •OptimizedforhighperformanceBuckconverter(Server,VGA) •VeryLowFOMQOSSforHighFrequencySMPS •LowFOMSWforHighFrequencySMPS •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on)@VGS=4.5V •100%avalanchetested •Superiorthermalresistance •N-channel •QualifiedaccordingtoJEDEC1)fortargetapplications •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max,VGS=10V 2 mΩ RDS(on),max,VGS=4.5V 2.6 mΩ ID 145 A S1 8D S2 7D S3 6D G4 5D Type/OrderingCode Package Marking RelatedLinks BSZ0901NS PG-TSDSON-8 FL 0901NS - 1) J-STD20 and JESD22 Final Data Sheet 1 Rev.2.4,2020-12-16 OptiMOSTMPower-MOSFET,30V BSZ0901NS TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Final Data Sheet 2 Rev.2.4,2020-12-16 OptiMOSTMPower-MOSFET,30V BSZ0901NS 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Parameter Symbol Values Unit Note/TestCondition 145 92 127 81 22 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=4.5V,TA=25°C,RthJA=60K/W - 580 A TC=25°C - - 20 A TC=25°C EAS - - 150 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 69 2.1 W TC=25°C TA=25°C,RthJA=60K/W Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 Unit Note/TestCondition Min. Typ. Max. ID - - ID,pulse - Avalanche current, single pulse IAS Avalanche energy, single pulse Continuous drain current1) Pulsed drain current2) 3) 2Thermalcharacteristics Table3Thermalcharacteristics Parameter Symbol Thermal resistance, junction - case Device on PCB, 6 cm2 cooling area4) Values Min. Typ. Max. RthJC - - 1.8 K/W - RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature at 25°C. For higher case temperature please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Final Data Sheet 3 Rev.2.4,2020-12-16 OptiMOSTMPower-MOSFET,30V BSZ0901NS 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Parameter Symbol Drain-source breakdown voltage Values Unit Note/TestCondition - V VGS=0V,ID=1mA - 2 V VDS=VGS,ID=250µA - 0.1 10 1 100 µA VDS=30V,VGS=0V,Tj=25°C VDS=30V,VGS=0V,Tj=125°C IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) - 2.2 1.7 2.6 2.0 mΩ VGS=4.5V,ID=20A VGS=10V,ID=20A Gate resistance RG 0.5 1.0 2.0 Ω - Transconductance gfs 70 140 - S |VDS|>2|ID|RDS(on)max,ID=30A Unit Note/TestCondition Min. Typ. Max. V(BR)DSS 30 - Gate threshold voltage VGS(th) 1.2 Zero gate voltage drain current IDSS Gate-source leakage current Table5Dynamiccharacteristics Parameter Symbol Input capacitance1) Values Min. Typ. Max. Ciss - 2850 3791 pF VGS=0V,VDS=15V,f=1MHz Output capacitance1) Coss - 970 1290 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 150 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 5.4 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 6.8 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 28 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 4.8 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Unit Note/TestCondition Table6Gatechargecharacteristics2) Parameter Symbol Gate to source charge1) Gate charge at threshold Values Min. Typ. Max. Qgs - 7.2 9.6 nC VDD=15V,ID=30A,VGS=0to4.5V Qg(th) - 4.7 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 7.0 9.1 nC VDD=15V,ID=30A,VGS=0to4.5V Switching charge Qsw - 9.0 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total Qg - 23 31 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.5 - V VDD=15V,ID=30A,VGS=0to4.5V Gate charge total1) Qg - 45 60 - VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 19 - nC VDS=0.1V,VGS=0to4.5V Qoss - 25 33 - VDD=15V,VGS=0V 1) 1) 1) Output charge 1) 2) Defined by design. Not subject to production test See ″Gate charge waveforms″ for parameter definition Final Data Sheet 4 Rev.2.4,2020-12-16 OptiMOSTMPower-MOSFET,30V BSZ0901NS Table7Reversediode Parameter Symbol Diode continuous forward current Values Unit Note/TestCondition 69 A TC=25°C - 580 A TC=25°C - 0.8 - V VGS=0V,IF=20A,Tj=25°C - 20 - nC VR=15V,IF=IS,diF/dt=400A/µs Min. Typ. Max. IS - - Diode pulse current IS,pulse - Diode forward voltage VSD Reverse recovery charge Qrr Final Data Sheet 5 Rev.2.4,2020-12-16 OptiMOSTMPower-MOSFET,30V BSZ0901NS 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation Diagram2:Draincurrent 80 150 70 125 60 10V 100 4.5V ID[A] Ptot[W] 50 40 75 30 50 20 25 10 0 0 20 40 60 80 100 120 140 0 160 0 20 40 60 TC[°C] 80 100 120 140 160 TC[°C] Ptot=f(TC) ID=f(TC);parameter:VGS Diagram3:Safeoperatingarea Diagram4:Max.transientthermalimpedance 3 101 10 1 µs 102 10 µs 100 µs 100 0.5 ZthJC[K/W] ID[A] 1 ms 10 ms 101 DC 0.2 0.1 0.05 10-1 0.02 100 0.01 single pulse 10-1 10-1 100 101 102 10-2 10-6 10-5 10-4 VDS[V] 10-2 10-1 100 tp[s] ID=f(VDS);TC=25°C;D=0;parameter:tp Final Data Sheet 10-3 ZthJC=f(tp);parameter:D=tp/T 6 Rev.2.4,2020-12-16 OptiMOSTMPower-MOSFET,30V BSZ0901NS Diagram5:Typ.outputcharacteristics Diagram6:Typ.drain-sourceonresistance 400 4 3V 5V 10 V 360 4V 320 3 280 RDS(on)[mΩ] ID[A] 240 200 160 4V 5V 2 7V 10 V 3V 120 1 80 2.8 V 40 0 0 1 2 0 3 0 10 20 VDS[V] 30 40 50 ID[A] ID=f(VDS);Tj=25°C;parameter:VGS RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics Diagram8:Typ.forwardtransconductance 300 270 270 240 240 210 210 180 gfs[S] ID[A] 180 150 150 120 120 90 90 60 60 150 °C 25 °C 30 30 0 0 1 2 3 4 5 0 0 VGS[V] 80 120 160 ID[A] ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Final Data Sheet 40 gfs=f(ID);Tj=25°C 7 Rev.2.4,2020-12-16 OptiMOSTMPower-MOSFET,30V BSZ0901NS Diagram9:Drain-sourceon-stateresistance Diagram10:Typ.gatethresholdvoltage 4 2.5 2.0 3 VGS(th)[V] RDS(on)[mΩ] 1.5 2 typ 1.0 1 0.5 0 -60 -20 20 60 100 140 0.0 -60 180 -20 20 Tj[°C] 60 100 140 180 Tj[°C] RDS(on)=f(Tj);ID=20A;VGS=10V VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances Diagram12:Forwardcharacteristicsofreversediode 4 103 10 25 °C 25 °C, max 150 °C 150 °C, max Ciss Coss 102 IF[A] C[pF] 103 Crss 102 101 101 0 5 10 15 20 25 30 100 0.00 0.25 VDS[V] 0.75 1.00 1.25 1.50 VSD[V] C=f(VDS);VGS=0V;f=1MHz Final Data Sheet 0.50 IF=f(VSD);parameter:Tj 8 Rev.2.4,2020-12-16 OptiMOSTMPower-MOSFET,30V BSZ0901NS Diagram13:Avalanchecharacteristics Diagram14:Typ.gatecharge 2 10 12 15 V 10 6V 24 V 125 °C 25 °C 100 °C VGS[V] IAV[A] 8 101 6 4 2 100 100 101 102 103 tAV[µs] 0 0 10 20 30 40 50 60 Qgate[nC] IAS=f(tAV);RGS=25Ω;parameter:Tj(start) VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Diagram Gate charge waveforms 34 32 VBR(DSS)[V] 30 28 26 24 22 20 -60 -20 20 60 100 140 180 Tj[°C] VBR(DSS)=f(Tj);ID=1mA Final Data Sheet 9 Rev.2.4,2020-12-16 OptiMOSTMPower-MOSFET,30V BSZ0901NS 5PackageOutlines PACKAGE - GROUP NUMBER: REVISION: 03 DIMENSIONS A b c D D1 D2 E E1 E2 e L L1 L2 aaa PG-TSDSON-8-U03 DATE: 20.10.2020 MILLIMETERS MIN. MAX. 0.90 1.10 0.24 0.44 (0.20) 3.20 3.40 2.19 2.39 1.54 1.74 3.20 3.40 2.01 2.21 0.10 0.30 0.65 0.30 0.50 0.40 0.60 0.50 0.70 0.06 Figure1OutlinePG-TSDSON-8FL,dimensionsinmm Final Data Sheet 10 Rev.2.4,2020-12-16 OptiMOSTMPower-MOSFET,30V BSZ0901NS RevisionHistory BSZ0901NS Revision:2020-12-16,Rev.2.4 Previous Revision Revision Date Subjects (major changes since last revision) 2.3 2020-08-14 Update current rating, footnotes, Ptot and RthJC 2.4 2020-12-16 Update package drawing Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. Final Data Sheet 11 Rev.2.4,2020-12-16