BTS612N1E3128A

PROFET® BTS612N1 Smart Two Channel High-Side Power Switch Product Summary Overvoltage protection Operating voltage Features Vbb(AZ) Vbb(on) channels:  Overload protection  Current limitation  Short circuit protection  Thermal shutdown  Overvoltage protection (including load dump)  Fast demagnetization of inductive loads  Reverse battery protection1)  Undervoltage and overvoltage shutdown with auto-restart and hysteresis  Open drain diagnostic output  Open load detection in OFF-state  CMOS compatible input  Loss of ground and loss of Vbb protection  Electrostatic discharge (ESD) protection  Green Product (RoHS compliant)  AEC Qualified On-state resistance RON Load current (ISO) IL(ISO) Current limitation IL(SCr) 43 5.0 ... 34 V V both each parallel 200 100 m 2.3 4.4 A 4 4 A PG-TO263-7-2 Application  C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads  All types of resistive, inductive and capacitve loads  Replaces electromechanical relays, fuses and discrete circuits General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Voltage source + V bb Current lim it 1 Overvoltage protection Gate 1 protection 4 V Logic 3 6 Level shifter sensor Rectifier 1 Lim it for unclam ped ind. loads 1 OUT1 1 Tem perature sensor 1 IN1 IN2 ESD 5 Voltage Logic Open load Short to Vbb detection 1 Charge pum p 1 Charge pum p 2 ST Current lim it 2 Level shifter Rectifier 2 Gate 2 protection Lim it for unclam ped ind. loads 2 OUT2 Tem perature 7 Load sensor 2  PROFET Open load Short to Vbb detection 2 GND 2 Signal GND Load GND ) 1 With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Data Sheet 1 2013-10-11 BTS612N1 Pin Symbol Function 1 OUT1 (Load, L) Output 1, protected high-side power output of channel 1 2 GND Logic ground 3 IN1 Input 1, activates channel 1 in case of logical high signal 4 Vbb 5 ST Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback: open drain, low on failure 6 IN2 Input 2, activates channel 2 in case of logical high signal 7 OUT2 (Load, L) Output 2, protected high-side power output of channel 2 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for short circuit protection Tj Start=-40 ...+150°C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V 3) RI = 2 , RL= 5.3 , td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC  25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. one channel, IL = 2.3 A, ZL = 89 mH, 0 : both channels parallel, IL = 4.4 A, ZL = 47 mH, 0 : Symbol Vbb Vbb Values 43 34 Unit V V 60 V IL Tj Tstg Ptot self-limited -40 ...+150 -55 ...+150 36 A °C EAS 290 580 mJ 1.0 2.0 kV -10 ... +16 2.0 5.0 V mA VLoad dump4) W see diagrams on page 9 Electrostatic discharge capability (ESD) (Human Body Model) IN: VESD all other pins: acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 Input voltage (DC) Current through input pin (DC) Current through status pin (DC) VIN IIN IST see internal circuit diagrams page 7 ) 2 3) 4) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150  resistor in the GND connection and a 15 k resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Data Sheet 2 2013-10-11 BTS612N1 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol chip - case, both channels: RthJC each channel: junction - ambient (free air): RthJA SMD version, device on PCB5): min ---- Values typ max -3.5 -7.0 -75 37 Unit K/W Electrical Characteristics Parameter and Conditions, each channel Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1 or 7) IL = 1.8 A Tj=25 °C: RON -- 160 200 400 1.8 3.5 320 2.3 4.4 -- -- --10 ton toff 80 80 200 200 400 400 s dV /dton 0.1 -- 1 V/s -dV/dtoff 0.1 -- 1 V/s each channel Tj=150 °C: Nominal load current, ISO Norm (pin 4 to 1 or 7) VON = 0.5 V, TC = 85 °C each channel: IL(ISO) both channels parallel: Output current (pin 1 or 7) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 8 Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 , Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 , Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 , Tj =-40...+150°C ) 5 IL(GNDhigh) m A mA Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70m thick) copper area for Vbb connection. PCB is vertical without blown air. Data Sheet 3 2013-10-11 BTS612N1 Parameter and Conditions, each channel Symbol Values min typ max Vbb(on) Vbb(under) Vbb(u rst) 5.0 3.5 -- ---- Vbb(ucp) -- Vbb(under) Vbb(over) Vbb(o rst) Vbb(over) Vbb(AZ) at Tj = 25 °C, Vbb = 12 V unless otherwise specified Operating Parameters Operating voltage6) Undervoltage shutdown Undervoltage restart Tj =-40...+150°C: Tj =-40...+150°C: Tj =-40...+25°C: Tj =+150°C: Undervoltage restart of charge pump see diagram page 12 Undervoltage hysteresis Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: 7) Overvoltage protection Tj =-40...+150°C: Ibb=40 mA Standby current (pin 4), VIN=0 Tj=-40...+150°C: 8) Operating current (Pin 2) , VIN=5 V both channels on, Tj =-40...+150°C, Operating current (Pin 2)8) one channel on, Tj =-40...+150°C:, 6) 7) ) 8 Unit V V V 5.6 34 5.0 5.0 7.0 7.0 -- 0.2 -- V 34 33 -42 --0.5 47 43 ---- V V V V V A Ibb(off) IGND --- 90 0.6 150 1.2 mA IGND -- 0.4 0.7 mA At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 8. Add IST, if IST > 0, add IIN, if VIN>5.5 V Data Sheet 4 2013-10-11 BTS612N1 Parameter and Conditions, each channel Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Protection Functions9) Initial peak short circuit current limit (pin 4 to 1 or 7) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 12) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 4 to 2) 10) Values min typ max Unit IL(SCp) 5.5 4.5 2.5 9.5 7.5 4.5 13 11 7 A -- 4 -- A 41 150 --- 47 -10 -- 53 --32 V °C K V Reverse battery voltage drop (Vout > Vbb) IL = -1.9 A, each channel Tj=150 °C: -VON(rev) -- 610 -- mV Diagnostic Characteristics Open load detection current -- 30 -- A 2 3 4 V VON(CL) Tjt Tjt -Vbb IL(off) (included in standby current Ibb(off)) Open load detection voltage IL(SCr) Tj=-40..150°C: VOUT(OL) ) 9 Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Requires 150  resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8). Data Sheet 5 2013-10-11 BTS612N1 Parameter and Conditions, each channel Symbol at Tj = 25 °C, Vbb = 12 V unless otherwise specified Values min typ max Input and Status Feedback11) Input resistance RI 2.5 Tj=-40..150°C, see circuit page 7 Input turn-on threshold voltage Tj V =-40..+150°C: 1.7 IN(T+) Input turn-off threshold voltage Tj =-40..+150°C: VIN(T-) 1.5 Input threshold hysteresis  VIN(T) -Off state input current (pin 3 or 6), VIN = 0.4 V, IIN(off) 1 Tj =-40..+150°C Unit 3.5 6 k --0.5 -- 3.5 --50 V V V A 20 50 90 A On state input current (pin 3 or 6), VIN = 3.5 V, Tj =-40..+150°C IIN(on) Delay time for status with open load td(ST OL3) -- 220 -- s Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: VST(high) ST low voltage Tj =-40...+25°C, IST = +1.6 mA: VST(low) Tj = +150°C, IST = +1.6 mA: 5.4 --- 6.1 --- -0.4 0.6 V after Input neg. slope (see diagram page 12) 11) If a ground resistor RGND is used, add the voltage drop across this resistor. Data Sheet 6 2013-10-11 BTS612N1 Truth Table Normal operation Open load Channel 1 Channel 2 Short circuit to Vbb Channel 1 Channel 2 Overtemperature both channel Channel 1 Channel 2 Undervoltage/ Overvoltage L = "Low" Level H = "High" Level IN1 IN2 OUT1 OUT2 ST BTS611L1 ST BTS612N1 L L H H L L H L H X L L H L H L H L H X L L H L H X L L H H Z Z H L H X H H H L H L H L H X Z Z H L H X H H H H L H H L H H L H H L H X L X H L H X X X L L H L H X X X L H X L H X L L L L L X X L H H H L L L X X L L L H H H H 12 H(L )) H L H(L12)) H L 13 L ) H 14 H(L )) L13) H H(L14)) H L L H L H L H X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12) Terms V L H H H L L H L H L H Input circuit (ESD protection) bb 4 I IN1 3 Ibb IN1 Vbb IN2 PROFET V ON1 VON2 OUT1 I IN2 6 I ST OUT2 ST V V IN1 IN2 V 5 ST GND GND I I L1 I L2 ESD-ZD I 7 I I V OUT1 2 R 1 R IN I GND GND VOUT2 ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). ) With additional external pull up resistor An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 14) Low resistance to Vbb may be detected in the ON-state by the no-load-detection 12 13) Data Sheet 7 2013-10-11 BTS612N1 Status output Open-load detection +5V OFF-state diagnostic condition: VOUT > 3 V typ.; IN low R ST(ON) ST ESDZD GND OFF ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380  at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). I L(OL) Open load detection Logic unit V OUT Signal GND Inductive and overvoltage output clamp GND disconnect + V bb V Z V VON 4 bb 3 IN1 Ibb Vbb OUT1 OUT GND 6 IN2 PROFET ST GND OUT2 P R OFE T 5 1 7 2 V VON clamped to 47 V typ. V V IN1 IN2 ST V GND Any kind of load. In case of Input=high is VOUT  VIN - VIN(T+) . Overvolt. and reverse batt. protection Due to VGND >0, no VST = low signal available. + V bb IN1 V RI GND disconnect with GND pull up Z2 4 IN2 3 Logic R ST V ST V OUT1 6 IN2 5 GND Vbb IN1 V Z1 IN1 IN2 PROFET ST GND OUT2 1 7 2 R GND Signal GND V VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 k typ RGND= 150  Data Sheet V bb ST V GND Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. 8 2013-10-11 BTS612N1 with an approximate solution for RL  0 : Vbb disconnect with energized inductive load EAS= 4 3 IN1 OUT1 6 IN2 PROFET ST GND OUT2 5 Maximum allowable load inductance for a single switch off (both channels parallel) Vbb high 1 L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, RL = 0  L [mH] 1000 7 2 V IL· L IL·RL ·(V + |VOUT(CL)|)· ln (1+ ) 2·RL bb |VOUT(CL)| bb Normal load current can be handled by the PROFET itself. 100 Vbb disconnect with charged external inductive load 4 3 IN1 Vbb OUT1 high 6 IN2 ST 10 PROFET OUT2 5 1 D 7 GND 2 V bb 1 If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. 2 3 4 5 6 7 8 IL [A] Inductive Load switch-off energy dissipation E bb E AS IN PROFET = ELoad Vbb OUT ST EL GND ZL { L RL ER Energy stored in load inductance: 2 EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER=  VON(CL)·iL(t) dt, Data Sheet 9 2013-10-11 BTS612N1 Typ. transient thermal impedance chip case ZthJC = f(tp), one Channel active ZthJC [K/W] 10 1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.1 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Transient thermal impedance chip case ZthJC = f(tp), both Channel active ZthJC [K/W] 10 1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.1 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Data Sheet 10 2013-10-11 BTS612N1 Timing diagrams Both channels are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels Figure 1a: Vbb turn on: Figure 2b: Switching an inductive load IN1 IN2 IN V bb ST V OUT1 V OUT V OUT2 I L ST open drain t t Figure 2a: Switching a lamp: IN ST V I OUT L t Data Sheet 11 2013-10-11 BTS612N1 Figure 3a: Short circuit shut down by overtempertature, reset by cooling IN Figure 5a: Open load: detection in OFF-state, turn on/off to open load IN1 other channel: normal operation IN2 channel 2: normal operation IL V OUT1 I L(SCp) I L(SCr) I L1 channel 1: open load t ST d(ST OL3) t d(ST OL3) ST t t Heating up may require several milliseconds, depending on external conditions td(ST,OL3) depends on external circuitry because of high impedance *) IL = 30 A typ Figure 4a: Overtemperature: Reset if Tj