BTS611L1E3128A

PROFET® BTS611L1 Smart Two Channel Highside Power Switch • Overload protection • Current limitation • Short circuit protection • Thermal shutdown • Overvoltage protection (including load dump) • Fast demagnetization of inductive loads • Reverse battery protection1) • Undervoltage and overvoltage shutdown with auto-restart and hysteresis • Open drain diagnostic output • Open load detection in ON-state • CMOS compatible input • Loss of ground and loss of Vbb protection • Electrostatic discharge (ESD) protection Features Product Summary Overvoltage protection Operating voltage Vbb(AZ) Vbb(on) 43 5.0 ... 34 both V V channels: On-state resistance RON Load current (ISO) IL(ISO) Current limitation IL(SCr) each parallel 200 100 mΩ 2.3 4.4 A 4 4 A TO-220AB/7 Application 7 1 7 • µC compatible power switch with diagnostic 1 feedback for 12 V and 24 V DC grounded loads Standard • All types of resistive, inductive and capacitve loads • Replaces electromechanical relays, fuses and discrete circuits 7 Straight leads SMD 1 General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic  feedback, monolithically integrated in Smart SIPMOS technology. Providing embedded protective functions. Voltage source V Logic Overvoltage protection Current limit 1 Gate 1 protection + V bb 4 Voltage sensor Level shifter Rectifier 1 Charge pump 1 Charge pump 2 Limit for unclamped ind. loads 1 Open load Short to Vbb detection 1 Current limit 2 Gate 2 protection OUT1 3 6 5 IN1 IN2 Temperature sensor 1 1 ESD ST Logic Level shifter Rectifier 2 Limit for unclamped ind. loads 2 Open load Short to Vbb detection 2 OUT2 Temperature sensor 2 R O1 GND R O2 7 Load  PROFET 2 GND Signal GND Load GND 1) With external current limit (e.g. resistor RGND=150 Ω) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Semiconductor Group 1 of 15 2003-Oct-01 PROFET® BTS611L1 Pin 1 2 3 4 5 6 7 Symbol OUT1 (Load, L) GND IN1 Vbb ST IN2 OUT2 (Load, L) Function Output 1, protected high-side power output of channel 1 Logic ground Input 1, activates channel 1 in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback: open drain, low on failure Input 2, activates channel 2 in case of logical high signal Output 2, protected high-side power output of channel 2 Maximum Ratings at Tj = 25 °C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 4) Supply voltage for full short circuit protection Tj Start=-40 ...+150°C Load dump protection2) VLoadDump = UA + Vs, UA = 13.5 V RI3)= 2 Ω, RL= 5.3 Ω, td= 200 ms, IN= low or high Load current (Short circuit current, see page 5) Operating temperature range Storage temperature range Power dissipation (DC), TC ≤ 25 °C Inductive load switch-off energy dissipation, single pulse Vbb = 12V, Tj,start = 150°C, TC = 150°C const. one channel, IL = 2.3 A, ZL = 89 mH, 0 Ω: both channels parallel, IL = 4.4 A, ZL = 47 mH, 0 Ω: see diagrams on page 9 Symbol Vbb Vbb VLoad dump4) IL Tj Tstg Ptot EAS Values 43 34 60 self-limited -40 ...+150 -55 ...+150 36 290 580 1.0 2.0 -10 ... +16 ±2.0 ±5.0 Unit V V V A °C W mJ Electrostatic discharge capability (ESD) (Human Body Model) Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 7 IN: VESD all other pins: VIN IIN IST kV V mA acc. MIL-STD883D, method 3015.7 and ESD assn. std. S5.1-1993 2) 3) 4) Supply voltages higher than Vbb(AZ) require an external current limit for the GND and status pins, e.g. with a 150 Ω resistor in the GND connection and a 15 kΩ resistor in series with the status pin. A resistor for the protection of the input is integrated. RI = internal resistance of the load dump test pulse generator VLoad dump is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 Semiconductor Group 2 2003-Oct-01 PROFET® BTS611L1 Thermal Characteristics Parameter and Conditions Thermal resistance Symbol min ---Values typ max -3.5 -7.0 -75 37 Unit K/W chip - case, both channels: RthJC each channel: junction - ambient (free air): RthJA SMD version, device on PCB5): Electrical Characteristics Parameter and Conditions, each channel at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 4 to 1 or 7) IL = 1.8 A Tj=25 °C: RON -1.8 3.5 -160 320 2.3 4.4 -200 400 --10 A mA µs mΩ each channel Tj=150 °C: Nominal load current, ISO Norm (pin 4 to 1 or 7) VON = 0.5 V, TC = 85 °C each channel: IL(ISO) both channels parallel: Output current (pin 1 or 7) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 8 Turn-on time IN to 90% VOUT: Turn-off time IN to 10% VOUT: RL = 12 Ω, Tj =-40...+150°C Slew rate on 10 to 30% VOUT, RL = 12 Ω, Tj =-40...+150°C Slew rate off 70 to 40% VOUT, RL = 12 Ω, Tj =-40...+150°C IL(GNDhigh) ton toff dV /dton -dV/dtoff 80 80 0.1 0.1 200 200 --- 400 400 1 1 V/µs V/µs 5) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for Vbb connection. PCB is vertical without blown air. Semiconductor Group 3 2003-Oct-01 PROFET® BTS611L1 Parameter and Conditions, each channel at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Operating Parameters Operating voltage6) Undervoltage shutdown Undervoltage restart Tj =-40...+150°C: Tj =-40...+150°C: Tj =-40...+25°C: Tj =+150°C: Undervoltage restart of charge pump see diagram page 13 Undervoltage hysteresis ∆Vbb(under) = Vbb(u rst) - Vbb(under) Overvoltage shutdown Tj =-40...+150°C: Overvoltage restart Tj =-40...+150°C: Overvoltage hysteresis Tj =-40...+150°C: Overvoltage protection7) Tj =-40...+150°C: Ibb=40 mA Standby current (pin 4) VIN=0 Tj=-40...+25°C: Tj= 150°C: Leakage output current (included in Ibb(off)) VIN=0 Operating current (Pin 2)8), VIN=5 V both channels on, Tj =-40...+150°C Operating current (Pin 2)8) one channel on, Tj =-40...+150°C: Vbb(on) Vbb(under) Vbb(u rst) Vbb(ucp) ∆Vbb(under) Vbb(over) Vbb(o rst) ∆Vbb(over) Vbb(AZ) 5.0 3.5 ---34 33 -42 ---5.6 0.2 --0.5 47 34 5.0 5.0 7.0 7.0 -43 ---- V V V V V V V V V Ibb(off) IL(off) IGND IGND ------ 14 17 -4 2 30 35 12 6 3 µA µA mA mA 6) 7) 8) At supply voltage increase up to Vbb= 5.6 V typ without charge pump, VOUT ≈Vbb - 2 V See also VON(CL) in table of protection functions and circuit diagram page 8. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group 4 2003-Oct-01 PROFET® BTS611L1 Parameter and Conditions, each channel at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Protection Functions9) Initial peak short circuit current limit (pin 4 to 1 or 7) Tj =-40°C: Tj =25°C: Tj =+150°C: Repetitive short circuit shutdown current limit Tj = Tjt (see timing diagrams, page 11) Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 40 mA: Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 4 to 2) 10) Reverse battery voltage drop (Vout > Vbb) IL = -1.8 A, each channel Tj=150 °C: Diagnostic Characteristics Open load detection current (on-condition) IL(SCp) 5.5 4.5 2.5 IL(SCr) -VON(CL) Tjt ∆Tjt -Vbb -VON(rev) 41 150 ---4 47 -10 -610 -53 --32 -A V °C K V mV 9.5 7.5 4.5 13 11 7 A Tj=-40 °C: IL (OL) Tj=25 ..150°C: 10 10 2 --3 200 150 4 mA V kΩ Open load detection voltage11) (off-condition) VOUT(OL) Tj=-40..150°C: Internal output pull down (pin 1 or 7 to 2), VOUT=5 V, Tj=-40..150°C RO 4 10 30 9) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as "outside" normal operating range. Protection functions are not designed for continuous repetitive operation. 10) Requires 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has to be limited by the connected load. Note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. The temperature protection is not active during reverse current operation! Input and Status currents have to be limited (see max. ratings page 2 and circuit page 8). 11) External pull up resistor required for open load detection in off state. Semiconductor Group 5 2003-Oct-01 PROFET® BTS611L1 Parameter and Conditions, each channel at Tj = 25 °C, Vbb = 12 V unless otherwise specified Symbol Values min typ max Unit Input and Status Feedback12) Input resistance Tj=-40..150°C, see circuit page 7 Input turn-on threshold voltage Tj =-40..+150°C: Input turn-off threshold voltage Tj =-40..+150°C: Input threshold hysteresis Off state input current (pin 3 or 6), VIN = 0.4 V, Tj =-40..+150°C On state input current (pin 3 or 6), VIN = 3.5 V, Tj =-40..+150°C Delay time for status with open load after switch off (other channel in off state) (see timing diagrams, page 12), Tj =-40..+150°C Delay time for status with open load after switch off (other channel in on state) (see timing diagrams, page 12), Tj =-40..+150°C Status invalid after positive input slope (open load) Tj=-40 ... +150°C: Status output (open drain) Zener limit voltage Tj =-40...+150°C, IST = +1.6 mA: ST low voltage Tj =-40...+25°C, IST = +1.6 mA: Tj = +150°C, IST = +1.6 mA: RI VIN(T+) VIN(T-) ∆ VIN(T) IIN(off) IIN(on) td(ST OL4) td(ST OL5) td(ST) 2.5 1.7 1.5 -1 20 100 --- 3.5 --0.5 -50 320 5 200 6 3.5 --50 90 800 20 600 kΩ V V V µA µA µs µs µs VST(high) VST(low) 5.4 --- 6.1 --- -0.4 0.6 V 12) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 6 2003-Oct-01 PROFET® BTS611L1 Truth Table IN1 Normal operation L L H H L L H L H X L L H L H X L X H L H X X X IN2 L H L H L H X L L H L H X L L H L H X X X L H X OUT1 L L H H Z Z H L H X H H H L H X L L L L L X X L OUT2 L H L H L H X Z Z H L H X H H H L L L X X L L L ST BTS611L1 H H H H H(L13)) H L H(L13)) H L L14) H H(L15)) L14) H H(L15)) H L L H L H L H ST BTS612N1 H H H H L H H L H H L H H L H H H L L H L H L H Open load Channel 1 Channel 2 Short circuit to Vbb Channel 1 Channel 2 Overtemperature both channel Channel 1 Channel 2 Undervoltage/ Overvoltage L = "Low" Level H = "High" Level X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 12...13) Terms Ibb VON1 VON2 OUT1 IN2 PROFET OUT2 GND 2 R GND IGND 7 V OUT1 VOUT2 1 I L1 I L2 Input circuit (ESD protection) R IN I 4 3 IN1 V bb I IN1 I IN2 Vbb ESD-ZD I GND I I 6 I ST ST V V IN1 IN2 V 5 ST ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). 13) 14) With additional external pull up resistor An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious. 15) Low resistance to V may be detected in the ON-state by the no-load-detection bb Semiconductor Group 7 2003-Oct-01 PROFET® BTS611L1 Status output +5V Open-load detection ON-state diagnostic condition: VON < RON * IL(OL); IN high + V bb R ST(ON) ST GND ESDZD ON VON ESD-Zener diode: 6.1 V typ., max 5 mA; RST(ON) < 380 Ω at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). OUT Logic unit Open load detection Inductive and overvoltage output clamp + V bb V Z OFF-state diagnostic condition: VOUT > 3 V typ.; IN low R EXT VON OFF V OUT OUT GND PROFET Logic unit Open load detection R O VON clamped to 47 V typ. Signal GND Overvolt. and reverse batt. protection + V bb GND disconnect V bb 3 IN1 IN2 ST 4 Ibb IN1 IN2 RI Logic V Z2 Vbb OUT1 PROFET OUT2 GND 2 V GND 1 R ST ST V 6 Z1 GND 7 5 V V V IN1 IN2 ST R GND Signal GND VZ1 = 6.1 V typ., VZ2 = 47 V typ., RI= 3.5 kΩ typ, RGND= 150 Ω Any kind of load. In case of Input=high is VOUT ≈ VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. Semiconductor Group 8 2003-Oct-01 PROFET® BTS611L1 GND disconnect with GND pull up 4 3 V IN1 6 V IN2 5 IN2 ST IN1 Vbb OUT1 PROFET OUT2 GND 2 V 1 Inductive Load switch-off energy dissipation E bb E AS Vbb PROFET OUT EL ELoad IN 7 = GND ST GND ZL V V bb ST { L RL ER Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Vbb disconnect with energized inductive load 4 3 high 6 5 IN2 ST PROFET OUT2 GND 2 7 IN1 Vbb OUT1 1 Energy stored in load inductance: EL = 1/2·L·I L While demagnetizing load inductance, the energy dissipated in PROFET is EAS= Ebb + EL - ER= VON(CL)·iL(t) dt, with an approximate solution for RL > 0 Ω: EAS= IL· L IL·RL ·(V + |VOUT(CL)|)· ln (1+ ) |VOUT(CL)| 2·RL bb 2 V bb Maximum allowable load inductance for a single switch off (both channels parallel) L = f (IL ); Tj,start = 150°C,TC = 150°C const., Vbb = 12 V, RL = 0 Ω L [mH] 1000 Normal load current can be handled by the PROFET itself. Vbb disconnect with charged external inductive load 4 3 high 6 5 IN2 ST PROFET OUT2 GND 2 7 IN1 Vbb OUT1 1 D 100 V bb 10 If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. 1 2 3 4 5 6 7 8 IL [A] Semiconductor Group 9 2003-Oct-01 PROFET® BTS611L1 Typ. transient thermal impedance chip case ZthJC = f(tp), one Channel active ZthJC [K/W] 10 1 0.1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Typ. transient thermal impedance chip case ZthJC = f(tp), both Channel active ZthJC [K/W] 10 1 0.1 D= 0.5 0.2 0.1 0.05 0.02 0.01 0 0.01 1E-5 1E-4 1E-3 1E-2 1E-1 1E0 1E1 tp [s] Semiconductor Group 10 2003-Oct-01 PROFET® BTS611L1 Timing diagrams Figure 1a: Vbb turn on: IN1 IN2 V bb Both channels are symmetric and consequently the diagrams are valid for each channel as well as for permuted channels Figure 2b: Switching an inductive load IN t ST d(ST) V OUT1 *) V V OUT OUT2 ST open drain t IL I L(OL) t *) if the time constant of load is too large, open-load-status may occur Figure 2a: Switching a lamp: IN Figure 3a: Short circuit shut down by overtempertature, reset by cooling ST IN other channel: normal operation V OUT IL I L(SCp) I L(SCr) I L t ST t Heating up may require several milliseconds, depending on external conditions Semiconductor Group 11 2003-Oct-01 PROFET® BTS611L1 Figure 5b: Open load: detection in ON-state, turn on/off to open load Figure 4a: Overtemperature: Reset if Tj