FF2MR12W3M1HB11BPSA1

FF2MR12W3M1H_B11 EasyPACK™ module EasyPACK™ module with CoolSiC™ Trench MOSFET Features • Electrical features - VDSS = 1200 V - IDN = 400 A / IDRM = 800 A - Low switching losses - High current density - Low inductive design • Mechanical features - PressFIT contact technology - Integrated NTC temperature sensor - Rugged mounting due to integrated mounting clamps Potential applications • • • • • High-frequency switching application Solar applications UPS systems DC/DC converter Servo drives Product validation • Qualified for industrial applications according to the relevant tests of IEC 60747, 60749 and 60068 Description J Datasheet www.infineon.com Please read the sections "Important notice" and "Warnings" at the end of this document Revision 1.10 2022-04-13 FF2MR12W3M1H_B11 EasyPACK™ module Table of contents Table of contents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 3 Body diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 4 NTC-Thermistor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .6 5 Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Circuit diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13 8 Module label code . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 Datasheet 2 Revision 1.10 2022-04-13 FF2MR12W3M1H_B11 EasyPACK™ module 1 Package 1 Package Table 1 Insulation coordination Parameter Symbol Note or test condition Isolation test voltage VISOL Internal isolation RMS, f = 50 Hz, t = 1 min basic insulation (class 1, IEC 61140) Values Unit 3.0 kV Al2O3 Creepage distance dCreep terminal to heatsink 9.6 mm Creepage distance dCreep terminal to terminal 11.3 mm Clearance dClear terminal to heatsink 9.2 mm Clearance dClear terminal to terminal 10.0 mm Comparative tracking index CTI Relative thermal index (electrical) RTI Table 2 > 400 housing Symbol Note or test condition Min. Stray inductance module Module lead resistance, terminals - chip LsCE RCC'+EE' Storage temperature Tstg Mounting torque for module mounting M Weight G 2 Table 3 °C Values Unit Characteristic values Parameter Note: 140 TH=25°C, per switch - Mounting according to M5, Screw valid application note Typ. Max. 5 nH 0.235 mΩ -40 125 °C 1.3 1.5 Nm 78 g Values Unit 1200 V 400 A 400 A 800 A -10/23 V The current under continuous operation is limited to 25 A rms per connector pin. MOSFET Maximum rated values Parameter Symbol Note or test condition Drain-source voltage VDSS Tvj = 25 °C Implemented drain current IDN Continuous DC drain current IDDC Tvj = 175 °C, VGS = 18 V Repetitive peak drain current IDRM verified by design, tp limited by Tvjmax Gate-source voltage, max. transient voltage VGS D = 0.01 TH = 75 °C (table continues...) Datasheet 3 Revision 1.10 2022-04-13 FF2MR12W3M1H_B11 EasyPACK™ module 2 MOSFET Table 3 (continued) Maximum rated values Parameter Symbol Note or test condition Gate-source voltage, max. static voltage Table 4 VGS Values Unit -7/20 V Values Unit Recommended values Parameter Symbol Note or test condition On-state gate voltage VGS(on) 15...18 V Off-state gate voltage VGS(off) -5...0 V Values Unit Table 5 Characteristic values Parameter Symbol Note or test condition Min. Drain-source on-resistance Gate threshold voltage Total gate charge RDS(on) VGS(th) QG ID = 400 A Typ. Max. VGS = 18 V, Tvj = 25 °C 1.44 2.27 mΩ VGS = 18 V, Tvj = 125 °C 2.33 VGS = 18 V, Tvj = 175 °C 3.09 VGS = 15 V, Tvj = 25 °C 1.71 5.15 V ID = 224 mA, VDS = VGS, Tvj = 25 °C, (tested after 1ms pulse at VGS = +20 V) 3.45 4.3 VDS = 800 V, VGS = -3/18 V 1.6 µC 0.9 Ω Internal gate resistor RGint Tvj = 25 °C Input capacitance CISS f = 100 kHz, VDS = 800 V, VGS = 0 V Tvj = 25 °C 48.4 nF Output capacitance COSS f = 100 kHz, VDS = 800 V, VGS = 0 V Tvj = 25 °C 2.4 nF Reverse transfer capacitance Crss f = 100 kHz, VDS = 800 V, VGS = 0 V Tvj = 25 °C 0.158 nF COSS stored energy EOSS VDS = 800 V, VGS = -3/18 V, Tvj = 25 °C 945 µJ Drain-source leakage current IDSS VDS = 1200 V, VGS = -3 V Tvj = 25 °C 0.32 Gate-source leakage current IGSS VDS = 0 V, Tvj = 25 °C VGS = 20 V Turn-on delay time (inductive load) td on ID = 400 A, RGon = 3.6 Ω, Tvj = 25 °C VDS = 600 V, VGS = -3/18 V Tvj = 125 °C 108 Tvj = 175 °C 98.2 660 µA 400 nA ns 101 (table continues...) Datasheet 4 Revision 1.10 2022-04-13 FF2MR12W3M1H_B11 EasyPACK™ module 3 Body diode Table 5 (continued) Characteristic values Parameter Symbol Note or test condition Values Min. Rise time (inductive load) tr Turn-off delay time (inductive load) td off Fall time (inductive load) tf Turn-on energy loss per pulse Eon Turn-off energy loss per pulse Eoff Thermal resistance, junction to heat sink RthJH Temperature under switching conditions Tvj op Note: 3 Table 6 ID = 400 A, RGon = 3.6 Ω, Tvj = 25 °C VDS = 600 V, VGS = -3/18 V Tvj = 125 °C 137 Tvj = 175 °C 124 ID = 400 A, RGoff = 1 Ω, Tvj = 25 °C VDS = 600 V, VGS = -3/18 V Tvj = 125 °C 136 Tvj = 175 °C 156 ID = 400 A, RGoff = 1 Ω, Tvj = 25 °C VDS = 600 V, VGS = -3/18 V Tvj = 125 °C 32.2 Tvj = 175 °C 34.3 ID = 400 A, VDS = 600 V, Tvj = 25 °C Lσ = 18 nH, VGS = -3/18 V, Tvj = 125 °C RGon = 3.6 Ω, di/dt = 8.7 Tvj = 175 °C kA/µs (Tvj = 175 °C) 17.7 ID = 400 A, VDS = 600 V, Tvj = 25 °C Lσ = 18 nH, VGS = -3/18 V, Tvj = 125 °C RGoff = 1 Ω, dv/dt = 14 Tvj = 175 °C kV/µs (Tvj = 175 °C) 2.83 per MOSFET 0.128 Max. ns 124 ns 150 ns 33.7 mJ 17.9 18.7 mJ 3.28 3.52 -40 K/W 175 °C The selection of positive and negative gate-source voltages impacts losses and the long-term behavior of the MOSFET and body diode. The design guidelines described in Application Note AN 2018-09 and AN 2021-13 must be considered to ensure sound operation of the device over the planned lifetime. Tvj,op > 150°C is allowed for operation at overload conditions for MOSFET and body diode. For detailed specifications, please refer to AN 2021-13. Body diode Maximum rated values Parameter DC body diode forward current Datasheet Typ. Unit Symbol Note or test condition ISD Tvj = 175 °C, VGS = -3 V 5 TH = 75 °C Values Unit 160 A Revision 1.10 2022-04-13 FF2MR12W3M1H_B11 EasyPACK™ module 4 NTC-Thermistor Table 7 Characteristic values Parameter Symbol Note or test condition Values Min. Forward voltage 4 VSD ISD = 400 A, VGS = -3 V Unit Typ. Max. Tvj = 25 °C 3.98 5.05 Tvj = 125 °C 3.75 Tvj = 175 °C 3.65 V NTC-Thermistor Table 8 Characteristic values Parameter Symbol Note or test condition Values Min. Rated resistance R25 TNTC = 25 °C Typ. Unit Max. 5 kΩ TNTC = 100 °C, R100 = 493 Ω Power dissipation ΔR/R B-value B25/50 R2 = R25 exp[B25/50(1/T2-1/(298,15 K))] 3375 K B-value B25/80 R2 = R25 exp[B25/80(1/T2-1/(298,15 K))] 3411 K B-value B25/100 R2 = R25 exp[B25/100(1/T2-1/(298,15 K))] 3433 K Deviation of R100 Note: Datasheet P25 -5 TNTC = 25 °C 5 % 20 mW Specification according to the valid application note. 6 Revision 1.10 2022-04-13 FF2MR12W3M1H_B11 EasyPACK™ module 5 Characteristics diagrams 5 Characteristics diagrams Output characteristic (typical), MOSFET ID = f(VDS) VGS = 18 V Output characteristic (typical), MOSFET ID = f(VDS) VGS = 15 V 800 800 700 700 600 600 500 500 400 400 300 300 200 200 100 100 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0.0 Drain source on-resistance (typical), MOSFET RDS(on) = f(ID) VGS = 18 V 1.0 1.5 2.0 2.5 3.0 Drain source on-resistance (typical), MOSFET RDS(on) = f(Tvj) ID = 400 A, VGS = 18 V 3.60 3.60 3.40 3.40 3.20 3.20 3.00 3.00 2.80 2.80 2.60 2.60 2.40 2.40 2.20 2.20 2.00 2.00 1.80 1.80 1.60 1.60 1.40 1.40 1.20 1.20 0 Datasheet 0.5 100 200 300 400 500 600 700 -50 800 7 -25 0 25 50 75 100 125 150 175 Revision 1.10 2022-04-13 FF2MR12W3M1H_B11 EasyPACK™ module 5 Characteristics diagrams Output characteristic field (typical), MOSFET ID = f(VDS) Tvj = 175 °C Transfer characteristic (typical), MOSFET ID = f(VGS) VDS = 20 V 800 800 700 700 600 600 500 500 400 400 300 300 200 200 100 100 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 4.0 Gate-source threshold voltage (typical), MOSFET VGS(th) = f(Tvj) VGS = VDS 5.0 6.0 7.0 8.0 9.0 10.0 11.0 Gate charge characteristic (typical), MOSFET VGS = f(QG) ID = 400 A, Tvj = 25 °C 5.0 18 4.8 15 4.6 12 4.4 9 4.2 6 4.0 3 3.8 0 3.6 3.4 -50 Datasheet -25 0 25 50 75 100 125 150 -3 0.00 175 8 0.20 0.40 0.60 0.80 1.00 1.20 1.40 1.60 Revision 1.10 2022-04-13 FF2MR12W3M1H_B11 EasyPACK™ module 5 Characteristics diagrams Capacity characteristic (typical), MOSFET C = f(VDS) f = 100 kHz, Tvj = 25 °C, VGS = -3 V Forward characteristic body diode (typical), MOSFET ISD = f(VSD) Tvj = 25 °C 100 800 700 600 10 500 400 300 1 200 100 0 0.1 0.1 1 10 100 1000 0.0 Forward voltage of body diode (typical), MOSFET VSD = f(Tvj) ISD = 400 A 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Switching losses (typical), MOSFET E = f(ID) RGoff = 1 Ω, RGon = 3.6 Ω, VDS = 600 V, VGS = -3/18 V 4.5 40 4.0 35 3.5 30 3.0 25 2.5 20 2.0 15 1.5 10 1.0 5 0.5 0.0 25 Datasheet 50 75 100 125 150 0 175 0 9 100 200 300 400 500 600 700 800 Revision 1.10 2022-04-13 FF2MR12W3M1H_B11 EasyPACK™ module 5 Characteristics diagrams Switching losses (typical), MOSFET E = f(RG) VDS = 600 V, ID = 400 A, VGS = -3/18 V Switching times (typical), MOSFET t = f(ID) RGoff = 1 Ω, RGon = 3.6 Ω, VDS = 600 V, Tvj = 175 °C, VGS = -3/18 V 1 120 105 90 75 60 0.1 45 30 15 0 0.01 0 5 10 15 20 25 30 35 40 0 Switching times (typical), MOSFET t = f(RG) VDS = 600 V, ID = 400 A, Tvj = 175 °C, VGS = -3/18 V 100 200 300 400 500 600 700 800 25 30 35 40 Current slope (typical), MOSFET di/dt = f(RG) VDS = 600 V, ID = 400 A, VGS = -3/18 V 1 6 5 4 3 0.1 3 2 1 0 0.01 0 Datasheet 5 10 15 20 25 30 35 40 0 10 5 10 15 20 Revision 1.10 2022-04-13 FF2MR12W3M1H_B11 EasyPACK™ module 5 Characteristics diagrams Voltage slope (typical), MOSFET dv/dt = f(RG) VDS = 600 V, ID = 400 A, VGS = -3/18 V Reverse bias safe operating area (RBSOA), MOSFET ID = f(VDS) RGoff = 1 Ω, Tvj = 175 °C, VGS = -3/18 V 15.0 900 800 12.5 700 10.0 600 500 7.5 400 5.0 300 200 2.5 100 0.0 0 0 1 2 3 4 5 6 7 8 9 10 0 Transient thermal impedance , MOSFET Zth = f(t) 200 400 600 800 1000 1200 1400 Temperature characteristic (typical), NTC-Thermistor R = f(TNTC) 1 100000 10000 0.1 1000 0.01 100 0.001 0.001 Datasheet 10 0.01 0.1 1 0 10 11 25 50 75 100 125 150 175 Revision 1.10 2022-04-13 FF2MR12W3M1H_B11 EasyPACK™ module 6 Circuit diagram 6 Circuit diagram DC+ G1.2 S1.2 G1.1 S1.1 X1 AC J X2 G2.1 S2.1 G2.2 S2.2 DCFigure 1 Datasheet 12 Revision 1.10 2022-04-13 FF2MR12W3M1H_B11 EasyPACK™ module 7 Package outlines Package outlines dimensioned for EJOT Delta PT WN5451 25 choose length according to pcb thickness max. screw-in depth 8,5mm 4x pcb hole pattern 2x 14 0 DC+ DC- S1.1 G1.1 DC- X1 X2 S2.1 G2.1 AC AC AC G2.2 S2.2 AC G1.2 S1.2 DC+ DC- 36,08 44,43 0 7,28 10,48 (99,35 0,1) Distance of threaded holes in heatsink 7,28 4,08 44,43 47,43 47,43 0 ( 3,4) 14 DCAC 23,28 20,08 62 0,45 26 24 20,8 17,6 14,4 11,2 8 4,8 1,6 0 1,6 4,8 8 11,2 14,4 17,6 20,8 24 26 5,4 0,1 ( 4,2) 36,08 32,88 7 (12) (16,4) 12,2 0,1 - Details about hole specification for contacts refer to AN2009-01 chapter 2 - Diameters of drill 1,15mm - Copper thickness in hole 25~50um W00178832.02 109,85 0,45 recommended pcb design height Figure 2 Datasheet 13 Revision 1.10 2022-04-13 FF2MR12W3M1H_B11 EasyPACK™ module 8 Module label code 8 Module label code Module label code Code format Data Matrix Barcode Code128 Encoding ASCII text Code Set A Symbol size 16x16 23 digits Standard IEC24720 and IEC16022 IEC8859-1 Code content Content Module serial number Module material number Production order number Date code (production year) Date code (production week) Digit 1–5 6 - 11 12 - 19 20 – 21 22 – 23 Example 71549 142846 55054991 15 30 Example 71549142846550549911530 71549142846550549911530 Figure 3 2 Datasheet 14 Revision 1.10 2022-04-13 FF2MR12W3M1H_B11 EasyPACK™ module Revision history Revision history Document revision Date of release Description of changes 0.10 2021-04-27 Target datasheet 1.00 2022-03-08 Final datasheet 1.10 2022-04-13 - Correction of switching times dimension. - Add of missing dv/dt and di/dt in table for dynamic parameters Datasheet 15 Revision 1.10 2022-04-13 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2022-04-13 Published by Infineon Technologies AG 81726 Munich, Germany © 2022 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-AAV103-003 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury.