IAUA210N10S5N024AUMA1 数据手册
IAUA210N10S5N024
Automotive MOSFET
OptiMOS™-5 Power-Transistor
PG-HSOF-5-4
Features
• OptiMOS™ power MOSFET for automotive applications
• N-channel – Enhancement mode – Normal Level
• Extended qualification beyond AEC-Q101
• Enhanced electrical testing
• Robust design
• MSL3 up to 260°C peak reflow
• 175°C operating temperature
• Green product (RoHS compliant)
• 100% Avalanche tested
1
1
1
2
3
Potential applications
4
General automotive applications.
5
Product validation
Qualified for automotive applications. Product validation according to AEC-Q101.
Product Summary
VDS
100
V
RDS(on)
2.4
mΩ
ID (chip limited)
210
A
Type
Package
Marking
IAUA210N10S5N024
PG-HSOF-5-4
5N10024
Data Sheet
Please read the Important Notice and Warnings at the end of this document
www.infineon.com/mosfets
Rev. 1.1
2021-11-12
OptiMOS™ 5 Automotive Power MOSFET, 100 V
IAUA210N10S5N024
Table of Contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. . . . . . . .
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3. . . . . . . .
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4. . . . . . . .
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4. . . . . . . .
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6. . . . . . . .
Package outline & footprint . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
..........
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
.........
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12
.........
2
Data Sheet
2
Rev. 1.1
2021-11-12
OptiMOS™ 5 Automotive Power MOSFET, 100 V
IAUA210N10S5N024
Maximum ratings
at Tj=25 °C, unless otherwise specified
Parameter
Symbol
Continuous drain current
ID
Conditions
Value
V GS=10 V, Chip limitation1)
210
V GS=10V, DC current2)
210
T a=85 °C, V GS=10 V,
A
26
R thJA on 2s2p2,3)
Pulsed drain current2)
Unit
I D,pulse
T C=25 °C, t p= 100 µs
674
E AS
I D=105 A
245
mJ
Avalanche current, single pulse
I AS
-
170
A
Gate source voltage
V GS
-
±20
V
Power dissipation
P tot
T C=25 °C
238
W
Operating and storage temperature
T j, T stg
-
-55 ... +175
°C
IEC climatic category; DIN IEC 68-1
-
-
55/175/56
Avalanche energy, single pulse
Data Sheet
2)
3
3
Rev. 1.1
2021-11-12
OptiMOS™ 5 Automotive Power MOSFET, 100 V
IAUA210N10S5N024
Thermal characteristics2)
Parameter
Thermal resistance, junction - case
Thermal resistance,
junction - ambient3)
Symbol
Values
Conditions
Unit
min.
typ.
max.
R thJC
–
-
-
0.63
R thJA
–
-
22.7
-
K/W
Electrical characteristics
at Tj=25 °C, unless otherwise specified
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
Static characteristics
Drain-source breakdown voltage
V (BR)DSS
V GS=0 V, I D=1 mA
100
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=150 µA
2.2
3
3.8
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V,
T j=25 °C
-
0.1
1
-
1
100
V DS=100 V, V GS=0 V,
T j=100 °C2)
V
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
RDS(on)
V GS=6 V, I D=50 A
-
2.5
3.0
mΩ
V GS=10 V, I D=100 A
-
2.0
2.4
-
-
1.4
-
Gate resistance2)
Data Sheet
RG
4
4
Ω
Rev. 1.1
2021-11-12
OptiMOS™ 5 Automotive Power MOSFET, 100 V
IAUA210N10S5N024
Parameter
Symbol
Values
Conditions
Unit
min.
typ.
max.
-
6689
8696
-
1073
1395
Dynamic characteristics2)
Input capacitance
C iss
Output capacitance
C oss
Reverse transfer capacitance
Crss
-
41
62
Turn-on delay time
t d(on)
-
16
-
Rise time
tr
-
8
-
Turn-off delay time
t d(off)
-
32
-
Fall time
tf
-
19
-
Gate to source charge
Q gs
-
31
41
Gate to drain charge
Q gd
-
18
27
Gate charge total
Qg
-
91
119
Gate plateau voltage
V plateau
-
4.7
-
V
A
V GS=0 V, V DS=50 V, f =1 MHz
V DD=50 V, V GS=10 V,
I D=100 A, R G=3.5 Ω
pF
ns
Gate Charge Characteristics2)
V DD=50 V, I D=100 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode continous forward current2)
IS
T C=25 °C
-
-
210
Diode pulse current2)
I S,pulse
T C=25 °C, t p= 100 µs
-
-
674
Diode forward voltage
V SD
V GS=0 V, I F=100 A,
T j=25 °C
-
0.9
1.2
V
Reverse recovery time2)
t rr
-
63
-
ns
Reverse recovery charge2)
Q rr
-
104
-
nC
V R=50 V, I F=50A,
di F/dt =100 A/µs
1)
Practically the current is limited by the overall system design including the customer-specific PCB.
2)
The parameter is not subject to production testing – specified by design.
3)
Device on 2s2p FR4 PCB defined in accordance with JEDEC standards (JESD51-5, -7). PCB is vertical in still air.
Data Sheet
5
5
Rev. 1.1
2021-11-12
OptiMOS™ 5 Automotive Power MOSFET, 100 V
IAUA210N10S5N024
Electrical characteristics diagrams
2 Drain current
P tot = f(T C); V GS ≥ 6 V
I D = f(T C); V GS ≥ 6 V
250
250
225
225
200
200
175
175
150
150
ID [A]
Ptot [W]
1 Power dissipation
125
125
100
100
75
75
50
50
25
25
0
DC current
0
0
50
100
150
200
0
50
100
TC [°C]
150
200
TC [°C]
3 Safe operating area
4 Max. transient thermal impedance
I D = f(V DS); T C = 25 °C; D = 0; parameter: tp
Z thJC = f(t p); parameter: D=tp/T
1000
100
1 µs
0.5
10 µs
100 µs
1 ms
10-1
ID [A]
ZthJC [K/W]
100
0.05
10-2
10
0.1
0.01
single pulse
10-3
1
0.1
1
10
100
10-6
10-4
10-3
10-2
10-1
100
tp [s]
VDS [V]
Data Sheet
10-5
66
Rev. 1.1
2021-11-12
OptiMOS™ 5 Automotive Power MOSFET, 100 V
IAUA210N10S5N024
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D = f(V DS); T j = 25 °C; parameter: VGS
R DS(on) = f(I D); T j = 25 °C; parameter: VGS
10
1000
9
10 V
4.5 V
6.5 V
800
8
5V
7
ID [A]
RDS(on) [mW]
6V
600
400
6
5
5.5 V
4
5.5 V
3
5V
200
6V
6.5 V
2
4.5 V
10 V
1
0
0
1
2
3
4
5
6
7
8
9
0
10
50
100
150
200
ID [A]
VDS [V]
7 Typ. transfer characteristics
8 Typ. drain-source on-state resistance
I D = f(V GS); V DS = 6V: parameter: Tj
R DS(on) = f(T j); parameter: ID, VGS
800
6
-55 °C
5.5
25 °C
5
175 °C
600
4.5
RDS(on) [mW]
ID [A]
4
400
3.5
VGS=6 V,
ID=50 A
3
2.5
VGS=10 V,
ID=100 A
2
200
1.5
1
0.5
0
2.5
3.5
4.5
5.5
6.5
-60
7.5
20
60
100
140
180
Tj [°C]
VGS [V]
Data Sheet
-20
77
Rev. 1.1
2021-11-12
OptiMOS™ 5 Automotive Power MOSFET, 100 V
IAUA210N10S5N024
9 Typ. gate threshold voltage
10 Typ. capacitances
V GS(th) = f(T j); V GS = V DS; parameter: I D
C = f(V DS); V GS = 0 V; f = 1 MHz
4
104
Ciss
3.5
1500 µA
3
103
C [pF]
VGS(th) [V]
Coss
150 µA
2.5
102
2
1.5
Crss
101
1
-60
-20
20
60
100
140
0
180
20
40
Tj [°C]
60
80
100
VDS [V]
11 Typical forward diode characteristics
12 Typ. avalanche characteristics
I F = f(V SD ); parameter: T j
I AS = f(t AV); parameter: T j(start)
1000
103
102
IAV [A]
IF [A]
25 °C
175 °C
100
25 °C
100 °C
101
150 °C
10
100
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1
VSD [V]
Data Sheet
10
100
1000
tAV [µs]
88
Rev. 1.1
2021-11-12
OptiMOS™ 5 Automotive Power MOSFET, 100 V
IAUA210N10S5N024
13 Typical avalanche energy
14 Drain-source breakdown voltage
E AS = f(T j); parameter: ID
V BR(DSS) = f(T j); I D_typ = 1 mA
109
550
108
500
107
50 A
106
400
105
350
104
VBR(DSS) [V]
EAS [mJ]
450
300
250
105 A
200
103
102
101
100
99
150
170 A
98
100
97
50
96
95
0
25
75
125
-60
175
-20
20
Tj [°C]
60
100
140
180
Tj [°C]
15 Typ. gate charge
16 Gate charge waveforms
V GS = f(Q gate); I D = 100 A pulsed; parameter: V DD
10
9
V GS
20 V
8
Qg
50 V
7
80 V
VGS [V]
6
5
4
3
2
Q gate
1
Q gs
Q gd
0
0
40
80
Qgate [nC]
Data Sheet
99
Rev. 1.1
2021-11-12
OptiMOS™ 5 Automotive Power MOSFET, 100 V
IAUA210N10S5N024
Package Outline
Footprint
Packaging
Data Sheet
10
Rev. 1.1
2021-11-12
OptiMOS™ 5 Automotive Power MOSFET, 100 V
IAUA210N10S5N024
Revision History
Revision
Date
Changes
Revision 1.0
17.03.2021
Final Datasheet
Revision 1.1
12.11.2021
Corrected figure 14
Data Sheet
11
11
Rev. 1.1
2021-11-12
Trademarks
All referenced product or service names and trademarks are the property of their respective owners.
Edition 2021-11-12
IMPORTANT NOTICE
Published by
The information given in this document shall in no event be
regarded as a guarantee of conditions or characteristics
("Beschaffenheitsgarantie").
Infineon Technologies AG
81726 Munich, Germany
© 2021 Infineon Technologies AG
All Rights Reserved.
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