IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
CoolSiC™ 1200 V SiC Trench MOSFET : Silicon Carbide MOSFET
TO-247 – 3Pin
Features
•
•
•
•
•
•
•
•
•
VDSS = 1200 V at Tvj = 25°C
IDDC = 127 A at Tc = 25°C
RDS(on) = 14 mΩ at VGS = 18 V, Tvj = 25°C
Very low switching losses
Short circuit withstand time 3 µs
Benchmark gate threshold voltage, VGS(th) = 4.2 V
Robust against parasitic turn on, 0 V turn-off gate voltage can be applied
Robust body diode for hard commutation
.XT interconnection technology for best-in-class thermal performance
Potential applications
•
•
•
•
•
General purpose drives (GPD)
EV-Charging
Online UPS/Industrial UPS
String inverter
Solar power optimizer
2021-10-27
restricted
Copyright © Infineon T
Product validation
• Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
• Please also note the application note AN2019-05 for power and thermal cycling
Description
1 – gate
2 – drain
3 – source
Type
Package
Marking
IMW120R014M1H
PG-TO247-3-STD-NN2.5
12M1H014
Datasheet
www.infineon.com
Please read the sections "Important notice" and "Warnings" at the end of this document
Revision 1.30
2023-05-08
IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
Table of contents
Table of contents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1
Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2
1
Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2
MOSFET . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
3
Body diode (MOSFET) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4
Characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
5
Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .13
6
Testing conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
Datasheet
2
Revision 1.30
2023-05-08
IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
1 Package
1
Package
Table 1
Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Storage temperature
Tstg
Soldering temperature
Tsold
M
Mounting torque
Thermal resistance,
junction-ambient
Rth(j-a)
MOSFET/body diode
thermal resistance,
junction-case
Rth(j-c)
2
Typ.
-55
Unit
Max.
150
°C
wave soldering 1.6 mm (0.063 in.) from case
for 10 s
260
°C
M3 screw, Maximum of mounting processes:
3
0.6
Nm
62
K/W
0.33
K/W
0.25
MOSFET
Table 2
Maximum rated values
Parameter
Symbol Note or test condition
Values
Unit
1200
V
Tc = 25 °C
127
A
Tc = 100 °C
89.3
Drain-source voltage
VDSS
Tvj ≥ 25 °C
Continuous DC drain
current for Rth(j-c,max),
limited by Tvj(max)
IDDC
VGS = 18 V
Peak drain current, tp
limited by Tvj(max)
IDM
VGS = 18 V
267.9
A
Gate-source voltage, max.
transient voltage1)
VGS
tp ≤ 0.5 µs, D < 0.001
-10/23
V
Gate-source voltage, max.
static voltage
VGS
-7/20
V
Avalanche energy, single
pulse
EAS
ID = 53 A, VDD = 50 V, L = 0.7 mH
956
mJ
Avalanche energy,
repetitive
EAR
ID = 53 A, VDD = 50 V, L = 3.3 µH
4.7
mJ
Short-circuit withstand
time
tSC
VDD ≤ 800 V, VDS,peak < 1200 V, VGS(on) = 15 V,
Tvj(start) = 25 °C
3
µs
150
V/ns
Tc = 25 °C
455
W
Tc = 100 °C
227
MOSFET dv/dt robustness
dv/dt
Power dissipation, limited
by Tvj(max)
Ptot
1)
VDS = 0...800 V
Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design
guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned
lifetime.
Datasheet
3
Revision 1.30
2023-05-08
IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
2 MOSFET
Table 3
Recommended values
Parameter
Symbol Note or test condition
Values
Unit
Recommended turn-on
gate voltage
VGS(on)
15...18
V
Recommended turn-off
gate voltage
VGS(off)
-5...0
V
Values
Unit
Table 4
Characteristic values
Parameter
Symbol Note or test condition
Min.
Drain-source on-state
resistance
RDS(on)
Gate-source threshold
voltage
VGS(th)
Zero gate-voltage drain
current
IDSS
Gate leakage current
IGSS
Forward transconductance
Internal gate resistance
ID = 54.3 A
Typ.
Max.
Tvj = 25 °C,
VGS(on) = 18 V
14
18.4
Tvj = 100 °C,
VGS(on) = 18 V
19
Tvj = 175 °C,
VGS(on) = 18 V
27
Tvj = 25 °C,
VGS(on) = 15 V
17.9
21.9
4.2
5.2
V
430
µA
VGS = 23 V
200
nA
VGS = -10 V
-200
ID = 23.4 mA, VDS = VGS
(tested after 1 ms pulse
at VGS = 20 V)
Tvj = 25 °C
VDS = 1200 V, VGS = 0 V
Tvj = 25 °C
Tvj = 175 °C
Tvj = 175 °C
VDS = 0 V
3.5
mΩ
3.6
7.3
gfs
ID = 54.3 A, VDS = 20 V
36.3
S
RG,int
f = 1 MHz, VAC = 25 mV
3.7
Ω
Input capacitance
Ciss
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
4580
pF
Output capacitance
Coss
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
211
pF
Reverse transfer
capacitance
Crss
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
30
pF
Coss stored energy
Eoss
VDD = 800 V, VGS = 0 V, f = 100 kHz, VAC = 25 mV
86
µJ
Total gate charge
QG
VDD = 800 V, ID = 54.3 A, VGS = 0/18 V, turn-on
pulse
145
nC
Plateau gate charge
QGS(pl)
VDD = 800 V, ID = 54.3 A, VGS = 0/18 V, turn-on
pulse
35.9
nC
Gate-to-drain charge
QGD
VDD = 800 V, ID = 54.3 A, VGS = 0/18 V, turn-on
pulse
28.9
nC
(table continues...)
Datasheet
4
Revision 1.30
2023-05-08
IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
2 MOSFET
Table 4
(continued) Characteristic values
Parameter
Symbol Note or test condition
Values
Min.
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Virtual junction
temperature
Datasheet
td(on)
tr
td(off)
tf
Eon
Eoff
Etot
Typ.
VDD = 800 V, ID = 54.3 A,
Tvj = 25 °C
VGS = 0/18 V,
Tvj = 175 °C
RGS(on) = 1 Ω,
RGS(off) = 1 Ω, Lσ = 15 nH,
diode: body diode at
VGS = 0 V
31
VDD = 800 V, ID = 54.3 A,
Tvj = 25 °C
VGS = 0/18 V,
Tvj = 175 °C
RGS(on) = 1 Ω,
RGS(off) = 1 Ω, Lσ = 15 nH,
diode: body diode at
VGS = 0 V
29
VDD = 800 V, ID = 54.3 A,
Tvj = 25 °C
VGS = 0/18 V,
Tvj = 175 °C
RGS(on) = 1 Ω,
RGS(off) = 1 Ω, Lσ = 15 nH,
diode: body diode at
VGS = 0 V
38
VDD = 800 V, ID = 54.3 A,
Tvj = 25 °C
VGS = 0/18 V,
Tvj = 175 °C
RGS(on) = 1 Ω,
RGS(off) = 1 Ω, Lσ = 15 nH,
diode: body diode at
VGS = 0 V
22
ns
ns
37
ns
42
ns
22
1340
VDD = 800 V, ID = 54.3 A,
Tvj = 25 °C
VGS = 0/18 V,
Tvj = 175 °C
RGS(on) = 1 Ω,
RGS(off) = 1 Ω, Lσ = 15 nH,
diode: body diode at
VGS = 0 V
470
VDD = 800 V, ID = 54.3 A,
Tvj = 25 °C
VGS = 0/18 V,
Tvj = 175 °C
RGS(on) = 1 Ω,
RGS(off) = 1 Ω, Lσ = 15 nH,
diode: body diode at
VGS = 0 V
2050
µJ
1640
µJ
510
µJ
2797
-55
5
Max.
28
VDD = 800 V, ID = 54.3 A,
Tvj = 25 °C
VGS = 0/18 V,
Tvj = 175 °C
RGS(on) = 1 Ω,
RGS(off) = 1 Ω, Lσ = 15 nH,
diode: body diode at
VGS = 0 V
Tvj
Unit
175
°C
Revision 1.30
2023-05-08
IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
3 Body diode (MOSFET)
Note:
For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of
the maximum ratings stated in this datasheet.
The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement
test setup and package.
Dynamic test circuit see Fig. F.
3
Table 5
Body diode (MOSFET)
Maximum rated values
Parameter
Symbol Note or test condition
Drain-source voltage
VDSS
Tvj ≥ 25 °C
Continuous reverse drain
current for Rth(j-c,max),
limited by Tvj(max)
ISDC
VGS = 0 V
Peak reverse drain current,
tp limited by Tvj(max)
ISM
Table 6
Values
Unit
1200
V
Tc = 25 °C
117
A
Tc = 100 °C
72
VGS = 0 V
A
Values
Unit
Characteristic values
Parameter
Symbol Note or test condition
Min.
Drain-source reverse
voltage
VSD
MOSFET forward recovery
charge
Qfr
MOSFET peak forward
recovery current
Ifrm
MOSFET forward recovery
energy
Efr
Virtual junction
temperature
Tvj
Datasheet
267.9
Typ.
Max.
Tvj = 25 °C
3.8
5
Tvj = 100 °C
3.7
Tvj = 175 °C
3.6
VDD = 800 V,
ISD = 54.3 A, VGS = 0 V,
diSD/dt = 3000 A/µs, Qfr
includes also QC
Tvj = 25 °C
450
Tvj = 175 °C
825
VDD = 800 V,
ISD = 54.3 A, VGS = 0 V,
diSD/dt = 3000 A/µs, Qfr
includes also QC
Tvj = 25 °C
13
Tvj = 175 °C
16
Tvj = 25 °C
240
Tvj = 175 °C
647
ISD = 54.3 A, VGS = 0 V
VDD = 800 V,
ISD = 54.3 A, VGS = 0 V,
diSD/dt = 3000 A/µs, Qfr
includes also QC
-55
6
V
nC
A
µJ
175
°C
Revision 1.30
2023-05-08
IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
4 Characteristics diagrams
4
Characteristics diagrams
Reverse bias safe operating area (RBSOA)
IDS = f(VDS)
Tvj ≤ 175 °C, VGS = 0/18 V, Tc = 25 °C
Power dissipation as a function of case temperature
limited by bond wire
Ptot = f(Tc)
300
600
250
500
200
400
150
300
100
200
50
100
0
0
0
200
400
600
800
1000
1200
1400
0
Maximum DC drain to source current as a function of
case temperature limited by bond wire
IDS = f(Tc)
160
140
140
120
120
100
100
80
80
60
60
40
40
20
20
75
100
125
150
175
0
0
Datasheet
50
Maximum source to drain current as a function of case
temperature limited by bond wire
ISD = f(Tc)
VGS = 0 V
160
0
25
25
50
75
100
125
150
175
0
7
25
50
75
100
125
150
175
Revision 1.30
2023-05-08
IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
4 Characteristics diagrams
Typical transfer characteristic
IDS = f(VGS)
VDS = 20 V, tp = 20 µs
Typical gate-source threshold voltage as a function of
junction temperature
VGS(th) = f(Tvj)
ID = 23.4 mA
6.0
900
800
5.0
700
4.0
600
500
3.0
400
2.0
300
200
1.0
100
0.0
0
0
4
8
12
16
-50
20
Typical output characteristic, VGS as parameter
IDS = f(VDS)
Tvj = 25 °C, tp = 20 µs
-25
0
25
50
75
100
125
150
175
Typical output characteristic, VGS as parameter
IDS = f(VDS)
Tvj = 175 °C, tp = 20 µs
900
600
800
500
700
600
400
500
300
400
300
200
200
100
100
0
0
0
Datasheet
4
8
12
16
20
0
8
4
8
12
16
20
Revision 1.30
2023-05-08
IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
4 Characteristics diagrams
Typical on-state resistance as a function of junction
temperature
RDS(on) = f(Tvj)
ID = 54.3 A
Typical gate charge
VGS = f(QG)
ID = 54.3 A, VDS = 800 V
45
18
40
16
35
14
30
12
25
10
20
8
15
6
10
4
5
2
0
-50
-25
0
25
50
75
100
125
150
0
175
0
Typical capacitance as a function of drain-source
voltage
C = f(VDS)
f = 100 kHz, VGS = 0 V
30
60
90
120
150
Typical reverse drain voltage as function of junction
temperature
VSD = f(Tvj)
ISD = 54.3 A, VGS = 0 V
5
10000
4
1000
3
100
2
10
1
0
1
1
Datasheet
10
100
-50
1000
9
-5
40
85
130
175
Revision 1.30
2023-05-08
IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
4 Characteristics diagrams
Typical reverse drain current as function of reverse
drain voltage, VGS as parameter
ISD = f(VSD)
Tvj = 175 °C, tp = 20 µs
Typical reverse drain current as function of reverse
drain voltage, VGS as parameter
ISD = f(VSD)
Tvj = 25 °C, tp = 20 µs
300
300
250
250
200
200
150
150
100
100
50
50
0
0
0
1
2
3
4
5
6
0
Typical switching energy as a function of junction
temperature, test circuit in Fig. F, 2nd device own
body diode: VGS = 0 V
E = f(Tvj)
VGS = 0/18 V, ID = 54.3 A, RG,ext = 1 Ω, VDD = 800 V
8000
3500
7000
3000
6000
2500
5000
2000
4000
1500
3000
1000
2000
500
1000
0
Datasheet
50
75
100
125
150
2
3
4
5
6
Typical switching energy as a function of drain
current, test circuit in Fig. F, 2nd device own body
diode: VGS = 0 V
E = f(ID)
VGS = 0/18 V, Tvj = 175 °C, RG,ext = 1 Ω, VDD = 800 V
4000
25
1
0
175
20
10
40
60
80
100
120
Revision 1.30
2023-05-08
IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
4 Characteristics diagrams
Typical switching energy losses as a function of gate
resistance, test circuit in Fig. F, 2nd device own body
diode: VGS = 0 V
E = f(RG,ext)
VGS = 0/18 V, ID = 54.3 A, Tvj = °C, VDD = 800 V
8000
Typical switching times as a function of gate
resistance, test circuit in Fig. F, 2nd device own body
diode: VGS = 0 V
t = f(RG,ext)
VGS = 0/18 V, ID = 54.3 A, Tvj = 175 °C, VDD = 800 V
450
360
6000
270
4000
180
2000
90
0
0
0
10
20
30
40
50
0
Typical reverse recovery charge as a function of
revere drain current slope, test circuit in Fig. F, 2nd
device own body diode: VGS = 0 V
Qfr = f(diSD/dt )
VGS = 0/18 V, ISD = 54.3 A, VDD = 800 V
10
20
30
40
50
Typical reverse recovery current as a function of
reverse drain current slope, test circuit in Fig. F, 2nd
device own body diode: VGS = 0 V
Ifrm = f(diSD/dt )
VGS = 0/18 V, ISD = 54.3 A, VDD = 800 V
1.00
30
0.90
25
0.80
0.70
20
0.60
0.50
15
0.40
10
0.30
0.20
5
0.10
0.00
0
0
Datasheet
1000
2000
3000
4000
5000
6000
0
11
1000
2000
3000
4000
5000
6000
Revision 1.30
2023-05-08
IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
4 Characteristics diagrams
Typical switching energy losses as a function of dead
time / blanking time, test circuit in Fig. F, 2nd device
own body diode: VGS = -5 V
E = f(tdead)
VGS = -5/18 V, ID = 54.3 A, Tvj = 175 °C, VDD = 800 V
Max. transient thermal impedance (MOSFET/diode)
Zth(j-c),max = f(tp)
D = tp/T
1
4000
3500
0.1
3000
2500
0.01
2000
1500
0.001
1000
500
0.0001
1E-6
0
50
Datasheet
250
450
650
850
1050
12
1E-5
0.0001
0.001
0.01
0.1
1
Revision 1.30
2023-05-08
IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
5 Package outlines
5
Package outlines
PG-TO247-3-STD-NN2.5
PACKAGE - GROUP
NUMBER:
DIMENSIONS
A
A1
A2
b
b1
b2
c
D
D1
D2
E
E1
E2
E3
e
N
L
L1
øP
Q
S
PG-TO247-3-U06
MILLIMETERS
MIN.
MAX.
4.83
5.21
2.27
2.54
1.85
2.16
1.07
1.33
1.90
2.41
2.87
3.38
0.55
0.68
20.80
21.10
16.25
17.65
0.95
1.35
15.70
16.13
13.10
14.15
3.68
5.10
1.00
2.60
5.44
3
20.32
19.80
4.10
4.47
3.50
3.70
6.00
5.49
6.04
6.30
Figure 1
Datasheet
13
Revision 1.30
2023-05-08
IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
6 Testing conditions
6
Testing conditions
I,V
VDS
90%
diSD/dt
tfr = ta + tb
Qfr = Qa + Qb
ISD
ta
10%
VGS
td(on)
td(off)
tr
ton
Ifrm
tf
toff
Qa
tfr
tb
Qb
t
10% Ifrm
VSD
Figure A. Definition of switching times
VGS(t)
Figure B. Definition of body diode
switching characteristics
90% VGS
VGS,VDS
Q
97% VDS
VGS = 18 V
10% VGS
t
ID(t)
1% ID
t
VDS
VDS(t)
QGS,pl
QGD
t, Q
QG,tot
Figure D. Definition of QGD
½Lσ
Eon =
t4
t3 ʃ VDS *ID*dt
Eoff =
t2
t1 ʃ VDS *ID*dt
t1
t2
t3
t4
second
device
3% VDS
t
Figure C. Definition of switching losses
L
Cσ
VGS(off)
VDD
τ1/r1
τ2/r2
τn/rn
RG
Tj(t)
DUT
p(t)
r1
r2
r3
TC
=
M
=
Figure E. Thermal equivalent circuit
½Lσ
Figure F. Dynamic test circuit
Parasitic inductance Lσ,
Parasitic capacitor Cσ,
Figure 2
Datasheet
14
Revision 1.30
2023-05-08
IMW120R014M1H
CoolSiC™ 1200 V SiC Trench MOSFET
Revision history
Revision history
Document revision
Date of release
Description of changes
1.00
2022-02-02
Final datasheet
1.10
2022-08-11
Change of test condition of dynamic capacitances in Table 4,
“Characteristic values” (Ciss, Coss, Crss): VDD= 25 V to VDD= 800 V
Correction of unit of “Input capacitance” Ciss from nF to pF
Change of VGS “Gate-source voltage, max. static voltage” in Table 2,
“Maximum rated values” from -5/20 V to -7/20 V
Editorial changes in “Features” on page 1
Editorial changes in “Package” on page 1
Correction of unit of x-axis at diagram “Max. transient thermal
impedance (MOSFET/diode)” from µs to s, on page 13
Correction of diagram “Typical reverse drain current as a function of
reverse drain voltage, VGS as parameter”, on page 11
1.20
2023-02-20
Correction of IDSS in table 4 on page 4
Editorial changes
1.30
2023-05-08
Correction of gate charge values in Table 4
Datasheet
15
Revision 1.30
2023-05-08
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Edition 2023-05-08
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