IMW120R350M1HXKSA1

IMW120R350M1H IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Silicon Carbide MOSFET Drain pin 2 Features Gate pin 1  Very low switching losses  Threshold-free on state characteristic  Wide gate-source voltage range  Benchmark gate threshold voltage, VGS(th) = 4.5V  0V turn-off gate voltage for easy and simple gate drive  Fully controllable dV/dt  Robust body diode for hard commutation  Temperature independent turn-off switching losses Source pin 3 Benefits  Efficiency improvement  Enabling higher frequency  Increased power density  Cooling effort reduction  Reduction of system complexity and cost Potential applications  Energy generation o   Solar string inverter and solar optimizer Industrial power supplies o Industrial UPS o Industrial SMPS Infrastructure – Charge o Charger Product validation Qualified for industrial applications according to the relevant tests of JEDEC 47/20/22 Table 1 Key Performance and Package Parameters Type IMW120R350M1H VDS 1200V Datasheet www.infineon.com ID RDS(on) TC = 25°C, Rth(j-c,max) Tvj = 25°C, ID = 2A, VGS = 18V 4.7A 350mΩ Tvj,max Marking Package 175°C 12M1H350 PG-TO247-3 Please read the Important Notice and Warnings at the end of this document page 1 of 17 2.2 2020-12-11 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Table of contents 1200V SiC Trench MOSFET Table of contents Features ........................................................................................................................................ 1 Benefits ......................................................................................................................................... 1 Potential applications ..................................................................................................................... 1 Product validation .......................................................................................................................... 1 Table of contents ............................................................................................................................ 2 1 Maximum ratings ................................................................................................................... 3 2 Thermal resistances ............................................................................................................... 4 3 3.1 3.2 3.3 Electrical Characteristics ........................................................................................................ 5 Static characteristics ............................................................................................................................... 5 Dynamic characteristics .......................................................................................................................... 6 Switching characteristics ........................................................................................................................ 7 4 Electrical characteristic diagrams ............................................................................................ 8 5 Package drawing................................................................................................................... 14 6 Test conditions ..................................................................................................................... 15 Revision history............................................................................................................................. 16 Datasheet 2 of 17 2.2 2020-12-11 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Maximum ratings 1 Maximum ratings For optimum lifetime and reliability, Infineon recommends operating conditions that do not exceed 80% of the maximum ratings stated in this datasheet. Table 2 Maximum ratings Parameter Symbol Value Unit Drain-source voltage, Tvj ≥ 25°C VDSS 1200 V DC drain current for Rth(j-c,max), limited by Tvjmax, VGS = 18V, TC = 25°C TC = 100°C ID 4.7 4.7 A Pulsed drain current, tp limited by Tvjmax, VGS = 18V ID,pulse1 13 A DC body diode forward current for Rth(j-c,max), limited by Tvjmax, VGS = 0V TC = 25°C TC = 100°C ISD Pulsed body diode current, tp limited by Tvjmax ISD,pulse1 13 Gate-source voltage2 Max transient voltage, < 1% duty cycle Recommended turn-on gate voltage Recommended turn-off gate voltage VGS VGS,on VGS,off -7… 23 15… 18 0 Short-circuit withstand time VDD = 800V, VDS,peak < 1200V, VGS,on = 15V, Tj,start = 25°C tSC 3 Power dissipation, limited by Tvjmax TC = 25°C TC = 100°C Ptot 60 30 W Virtual junction temperature Tvj -55… 175 °C Storage temperature Tstg -55… 150 °C Soldering temperature, wave soldering only allowed at leads, 1.6mm (0.063 in.) from case for 10 s Tsold 260 °C Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm 4.7 4.7 A A V µs verified by design Important note: The selection of positive and negative gate-source voltages impacts the long-term behavior of the device. The design guidelines described in Application Note AN2018-09 must be considered to ensure sound operation of the device over the planned lifetime. 1 2 Datasheet 3 of 17 2.2 2020-12-11 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Thermal resistances 2 Thermal resistances Table 3 Parameter Symbol MOSFET/body diode thermal resistance, junction – case Rth(j-c) Thermal resistance, junction – ambient Rth(j-a) Datasheet Value Conditions leaded 4 of 17 Unit min. typ. max. - 1.9 2.5 K/W - - 62 K/W 2.2 2020-12-11 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3 Electrical Characteristics 3.1 Static characteristics Table 4 Static characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Drain-source on-state resistance Symbol RDS(on) Body diode forward voltage VSD Gate-source threshold voltage VGS(th) Conditions Value VGS = 18V, ID = 2A, Tvj = 25°C Tvj = 100°C Tvj = 175°C VGS = 15V, ID = 2A, Tvj = 25°C VGS = 0V, ISD = 2A Tvj = 25°C Tvj = 100°C Tvj = 175°C Unit min. typ. max. - 350 446 662 468 - - 450 598 - 4.1 4.0 3.9 5.2 - mΩ V (tested after 1 ms pulse at VGS = 20V) ID = 1mA, VDS = VGS Tvj = 25°C Tvj =175°C 3.5 - 4.5 3.6 5.7 - VGS = 0V, VDS = 1200V Tvj = 25°C Tvj = 175°C - 0.1 0.3 20 - µA VGS = 23V, VDS = 0V - - 100 nA VGS = -7V, VDS = 0V - - -100 nA V Zero gate voltage drain current IDSS Gate-source leakage current IGSS Transconductance gfs VDS = 20V, ID = 2A - 1 - S Internal gate resistance RG,int f = 1MHz, VAC = 25mV - 35 - Ω Datasheet 5 of 17 2.2 2020-12-11 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3.2 Dynamic characteristics Table 5 Dynamic characteristics (at Tvj = 25°C, unless otherwise specified) Parameter Symbol Input capacitance Ciss Output capacitance Coss Reverse capacitance Crss Coss stored energy Eoss Total gate charge QG Gate to source charge QGS,pl Gate to drain charge QGD Datasheet Value Conditions VDD = 800V, VGS = 0V, f = 1MHz, VAC = 25mV VDD = 800V, ID = 2A, VGS = 0/18V, turn-on pulse 6 of 17 min. typ. max. - 182 - - 10 - - 1 - - - - 3.7 5.3 - 1.5 - - 1.2 - Unit pF µJ nC 2.2 2020-12-11 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical Characteristics 3.3 Switching characteristics Table 6 Switching characteristics, Inductive load 4 Parameter Symbol Conditions Value Unit min. typ. max. - 7 - - 0.7 - - 11.4 - - 21.5 - - 41 - - 4 - - 45 - - 64 - nC - 0.9 - A - 7 - - 1.7 - - 11.4 - - 21.5 - - 51 - - 4 - - 55 - - 80 - nC - 1 - A MOSFET Characteristics, Tvj = 25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Etot VDD = 800V, ID = 2A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E ns µJ Body Diode Characteristics, Tvj = 25°C Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm VDD = 800V, ISD = 2A, VGS at diode = 0V, dif/dt = 1000A/µs, Qrr includes also QC , see Fig. C MOSFET Characteristics, Tvj = 175°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Etot VDD = 800V, ID = 2A, VGS = 0/18V, RG,ext = 2Ω, Lσ = 40nH, diode: body diode at VGS = 0V see Fig. E ns µJ Body Diode Characteristics, Tvj = 175°C Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm VDD = 800V, ISD = 2A, VGS at diode = 0V, dif/dt = 1000A/µs, Qrr includes also QC , see Fig. C The chip technology was characterized up to 200 kV/µs. The measured dV/dt was limited by measurement test setup and package. 4 Datasheet 7 of 17 2.2 2020-12-11 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 4 Electrical characteristic diagrams 14 70 12 60 not for linear use 50 Ptot [W] IDS [A] 10 8 6 40 30 4 20 2 10 Rth(j-c,max) Rth(j-c,typ) 0 0 0 800 VDS [V] 0 1200 25 Safe operating area (SOA) (VGS = 0/18V, Tc = 25°C, Tj ≤ 175°C) Figure 2 6 6 5 5 4 4 3 Rth(j-c,max) 1 Power dissipation as a function of case temperature limited by bond wire (Ptot = f(TC)) 3 Rth(j-c,typ) 1 Rth(j-c,max) Rth(j-c,typ) 0 0 0 Datasheet 75 100 125 150 175 2 2 Figure 3 50 TC [ C] ISD [A] IDS [A] Figure 1 400 25 50 75 100 125 150 175 TC [ C] Maximum DC drain to source current as Figure 4 a function of case temperature limited by bond wire (IDS = f(TC)) 8 of 17 0 25 50 75 100 125 150 175 TC [ C] Maximum source to drain current as a function of case temperature limited by bond wire (ISD = f(TC), VGS = 0V) 2.2 2020-12-11 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 20 6 25°C 175°C 5 VGS (th) [V] IDS [A] 15 10 4 3 2 5 1 0 0 0 -40 20 Figure 6 12 8 8 0 0 Figure 7 4 8 12 VDS [V] 16 20 Typical output characteristic, VGS as parameter (IDS = f(VDS), Tvj=25°C, tP = 20µs) 0 Figure 8 9 of 17 160 20V 18V 16V 15V 14V 12V 10V 8V 6V 12 4 60 110 Tvj [ C] Typical gate-source threshold voltage as a function of junction temperature (VGS(th) = f(Tvj), IDS = 1mA, VGS = VDS) 16 4 0 10 20 20V 18V 16V 15V 14V 12V 10V 8V 6V 16 IDS [A] 15 Typical transfer characteristic (IDS = f(VGS), VDS = 20V, tP = 20µs) 20 Datasheet 10 VGS [V] IDS [A] Figure 5 5 4 8 12 VDS [V] 16 20 Typical output characteristic, VGS as parameter (IDS = f(VDS), Tvj=175°C, tP = 20µs) 2.2 2020-12-11 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 18 VGS = 18V 16 VGS = 15V 14 600 12 VGS [V] RDS (ON) [mOhm] 900 300 10 8 6 4 2 0 -40 Figure 9 10 60 110 Tvj [ C] 0 160 0 Typical on-resistance as a function of junction temperature (RDS(on) = f(Tvj), IDS = 2A) Figure 10 1 2 3 QG [nC] 4 5 Typical gate charge (VGS = f(QG), IDS = 2A, VDS = 800V, turn-on pulse) 6 1000 5 100 VSD [V] C [pF] 4 10 3 2 Ciss Coss 1 Crss 1 1 10 100 0 1000 -40 VDS[V] Figure 11 Datasheet Typical capacitance as a function of drain-source voltage (C = f(VDS), VGS = 0V, f = 1MHz) Figure 12 10 of 17 10 60 110 Tvj [ C] 160 Typical body diode forward voltage as function of junction temperature (VSD=f(Tvj), VGS=0V, ISD=2A) 2.2 2020-12-11 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 6 6 VGS=18V 5 ISD [A] ISD [A] 3 2 3 2 VGS=0V VGS=-2V 1 1 0 0 0 Figure 13 1 2 3 4 VSD [V] 5 Typical body diode forward current as function of forward voltage, VGS as parameter (ISD = f(VSD), Tvj = 25°C, tP = 20µs) Figure 14 1 2 3 4 VSD [V] 5 6 Typical body diode forward current as function of forward voltage, VGS as parameter (ISD = f(VSD), Tvj = 175°C, tP = 20µs) 100 Etot Eon Eoff 80 Etot Eon 80 E [µJ] 60 40 20 Eoff 60 40 20 0 0 25 Figure 15 VGS=0V VGS=-2V 0 6 100 E [µJ] VGS=15V 4 4 Datasheet VGS=18V 5 VGS=15V 75 125 Tvj [ C] 175 Typical switching energy losses as a Figure 16 function of junction temperature (E = f(Tvj), VDD = 800V, VGS = 0V/18V, RG,ext = 2Ω, ID = 2A, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) 11 of 17 0 1 2 ID [A] 3 4 Typical switching energy losses as a function of drain-source current (E = f(IDS), VDD = 800V, VGS = 0V/18V, RG,ext = 2Ω, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) 2.2 2020-12-11 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams 100 40 Etot Eon Eoff 30 Time [ns] 80 60 E [µJ] td(on) tr td(off) tf 35 40 25 20 15 10 20 5 0 0 0 Figure 17 20 0 40 60 80 100 120 RG [Ohm] Figure 18 Typical switching energy losses as a function of gate resistance (E = f(RG,ext), VDD = 800V, VGS = 0V/18V, ID = 2A, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) 20 40 60 80 RG [Ohm] 100 120 Typical switching times as a function of gate resistor (t = f(RG,ext), VDD = 800V, VGS = 0V/18V, ID = 2A, Tvj = 175°C, ind. load, test circuit in Fig. E, diode: body diode at VGS = 0V) 4 0.4 175°C 25°C 3 IRRM [A] QRR [µC] 0.3 0.2 0.1 2 1 175°C 25°C 0.0 0 0 Figure 19 Datasheet 2000 4000 diF /dt[A/µs] 6000 0 Typical reverse recovery charge as a Figure 20 function of diode current slope (Qrr = f(dif/dt), VDD = 800V, VGS = 0V/18V, ID = 2A, ind. load, test circuit in Fig.E, body diode at VGS = 0V) 12 of 17 2000 4000 diF /dt[A/µs] 6000 Typical reverse recovery current as a function of diode current slope (Irrm = f(dif/dt), VDD = 800V, VGS = 0V/18V, ID = 2A, ind. load, test circuit in Fig.E, body diode at VGS = 0V) 2.2 2020-12-11 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Electrical characteristic diagrams Zthjc [K/W] 10.00 1.00 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.10 i: ri: [K/W] τi: [s] 0.01 1E-6 Figure 21 Datasheet 1E-5 1E-4 1E-3 tp [s] 1 5.73E-01 2.48E-04 2 1.67E-01 8.48E-06 1E-2 3 1.27E+00 1.30E-03 1E-1 4 4.93E-01 9.24E-03 1E0 Max. transient thermal resistance (MOSFET/diode) (Zth(j-c,max) = f(tP), parameter D = tp/T, thermal equivalent circuit in Fig. D) 13 of 17 2.2 2020-12-11 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Package drawing 5 Package drawing Figure 22 Package drawing Datasheet 14 of 17 2.2 2020-12-11 IMW120R350M1H CoolSiC™ 1200V SiC Trench MOSFET Test conditions 6 Test conditions Figure 23 Test conditions Datasheet 15 of 17 2.2 2020-12-11 IMW120R350M1H 1200V SiC Trench MOSFET Revision history Revision history Document version Date of release Description of changes 2.0 2019-08-22 Final Datasheet 2.1 2019-12-10   2.2 Datasheet 2020-12-11 Move the short circuit time from dynamic characteristics table 5 to maximum ratings table 2. Update the Figure 12, 13, 14 the body diode forward voltage. Correction of circuit symbol on page 1 16 of 17 2.2 2020-12-11 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2019. owners. All Rights Reserved. Important notice The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). Please note that this product is not qualified according to the AEC Q100 or AEC Q101 documents of the Automotive Electronics Council. 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