IPB60R199CPAATMA1

IPB60R199CPA CoolMOS® Power Transistor Product Summary 600 V DS V 0.199 Ω R DS(on),max 33 Q g,typ nC Features • Lowest figure-of-merit Ron x Qg • Ultra low gate charge • Extreme dv/dt rated PG-TO263-3 • High peak current capability • Automotive AEC Q101 qualified • Green package (RoHS compliant) CoolMOS CPA is specially designed for: • DC/DC converters for Automotive Applications Type Package Marking IPB60R199CPA PG-TO263-3 6R199A Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current ID Value T C=25 °C 16 T C=100 °C 10 Pulsed drain current1) I D,pulse T C=25 °C 51 Avalanche energy, single pulse E AS I D=6.6 A, V DD=50 V 436 Avalanche energy, repetitive t AR1),2) E AR I D=6.6 A, V DD=50 V 0.66 Avalanche current, repetitive t AR1),2) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage Unit A mJ 6.6 A V DS=0...480 V 50 V/ns V GS static ±20 V Power dissipation P tot T C=25 °C 139 W Operating temperature Tj -40 ... 150 °C Storage temperature T stg -40 ... 150 Rev. 2.0 page 1 2009-09-01 IPB60R199CPA Maximum ratings, at T j=25 °C, unless otherwise specified Value Parameter Symbol Conditions Unit Continuous diode forward current IS Diode pulse current1) I S,pulse 51 Reverse diode dv /dt 3) dv /dt 15 V/ns Parameter Symbol Conditions Values Unit 9.9 T C=25 °C A min. typ. max. - - 0.9 SMD version, device on PCB, minimal footprint - - 62 SMD version, device on PCB, 6 cm2 cooling area4) - 35 - MSL 1 - - 245 °C V Thermal characteristics Thermal resistance, junction - case R thJC R thJA Thermal resistance, junction ambient Soldering temperature, reflow soldering T sold K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS=V GS, I D=1.1 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 1 µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=9.9 A, T j=25 °C - 0.18 0.199 Ω V GS=10 V, I D=9.9 A, T j=150 °C - 0.49 - f =1 MHz, open drain - 2 - Gate resistance Rev. 2.0 RG page 2 Ω 2009-09-01 IPB60R199CPA Parameter Values Symbol Conditions Unit min. typ. max. - 1520 - - 72 - - 69 - - 180 - - 10 - - 5 - - 50 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy C o(er) related5) V GS=0 V, V DS=100 V, f =1 MHz V GS=0 V, V DS=0 V to 480 V pF Effective output capacitance, time related6) C o(tr) Turn-on delay time t d(on) Rise time tr Turn-off delay time t d(off) Fall time tf - 5 - Gate to source charge Q gs - 8 - Gate to drain charge Q gd - 11 - Gate charge total Qg - 32 43 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 340 - ns - 5.5 - µC - 33 - A V DD=400 V, V GS=10 V, I D=9.9 A, R G=3.3 Ω ns Gate Charge Characteristics V DD=400 V, I D=9.9 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=9.9 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) Pulse width t p limited by T j,max 2) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 3) I SD≤I D, di /dt ≤200A/µs, V DClink=400V, V peak