IRFR5305CPBF

PD - 91402A IRFR/U5305 HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR5305) Straight Lead (IRFU5305) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -55V RDS(on) = 0.065Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. D-Pak IRFR5305 I-Pak IRFU5305 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ -10V Continuous Drain Current, VGS @ -10V Pulsed Drain Current † Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy‚† Avalanche Current† Repetitive Avalanche Energy Peak Diode Recovery dv/dt ƒ† Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 srew Max. Units -31 -22 -110 110 0.71 ± 20 280 -16 11 -5.0 -55 to + 175 A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) 10 lbf•in (1.1N•m) Thermal Resistance Parameter RθJC RθJA RθJA Junction-to-Case Junction-to-Ambient (PCB mount)* Junction-to-Ambient** Typ. Max. Units ––– ––– ––– 1.4 50 110 °C/W 10/23/00 IRFR/U5305 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance V(BR)DSS IDSS Drain-to-Source Leakage Current Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time LD Internal Drain Inductance LS Internal Source Inductance Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance IGSS Min. Typ. Max. Units Conditions -55 ––– ––– V VGS = 0V, ID = -250µA ––– -0.034 ––– V/°C Reference to 25°C, ID = -1mA ––– ––– 0.065 Ω VGS = -10V, ID = -16A „ -2.0 ––– -4.0 V VDS = VGS, ID = -250µA 8.0 ––– ––– S VDS = -25V, ID = -16A† ––– ––– -25 VDS = -55V, VGS = 0V µA ––– ––– -250 VDS = -44V, VGS = 0V, TJ = 150°C ––– ––– 100 VGS = 20V nA ––– ––– -100 VGS = -20V ––– ––– 63 ID = -16A ––– ––– 13 nC VDS = -44V ––– ––– 29 VGS = -10V, See Fig. 6 and 13 „† ––– 14 ––– VDD = -28V ––– 66 ––– ID = -16A ns ––– 39 ––– RG = 6.8Ω ––– 63 ––– RD = 1.6Ω, See Fig. 10 „† D Between lead, 4.5 ––– ––– 6mm (0.25in.) nH G from package ––– 7.5 ––– and center of die contact … S ––– 1200 ––– VGS = 0V ––– 520 ––– pF VDS = -25V ––– 250 ––– ƒ = 1.0MHz, See Fig. 5 † Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode)  Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units ––– ––– -31 A ––– ––– -110 ––– ––– ––– ––– 71 170 -1.3 110 250 V ns nC Conditions D MOSFET symbol showing the G integral reverse p-n junction diode. S TJ = 25°C, IS = -16A, VGS = 0V „ TJ = 25°C, IF = -16A di/dt = -100A/µs „† Notes:  Repetitive rating; pulse width limited by max. junction temperature. (See Fig. 11) ‚ VDD = -25V, starting TJ = 25°C, L = 2.1mH RG = 25Ω, IAS = -16A. (See Figure 12) ƒ ISD ≤ -16A, di/dt ≤ -280A/µs, VDD ≤ V(BR)DSS, „ Pulse width ≤ 300µs; duty cycle ≤ 2%. … This is applied for I-PAK, LS of D-PAK is measured between lead and center of die contact. † Uses IRF5305 data and test conditions. TJ ≤ 175°C * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. ** Uses typical socket mount. 2 www.irf.com IRFR/U5305 1000 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOT TOM - 4.5V VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP -ID , D rain-to-S ourc e C urrent (A ) -ID , D rain-to-S ou rc e C urre nt (A ) TO P 100 10 -4.5 V 2 0µ s P U LS E W ID TH T cJ = 2 5°C A 1 0.1 1 10 100 10 -4 .5 V 20 µ s P U L S E W ID T H TCJ = 17 5°C 1 0.1 100 1 Fig 2. Typical Output Characteristics Fig 1. Typical Output Characteristics 2.0 R D S (on) , Drain-to-S ource O n Resistance (N orm alized) -I D , D rain-to -So urc e C urre nt (A ) 100 TJ = 2 5°C TJ = 17 5 °C 10 V DS = -2 5 V 2 0µ s P U L S E W ID TH 4 5 6 7 8 9 -V G S , G ate -to-Source Volta ge (V ) Fig 3. Typical Transfer Characteristics www.irf.com A 100 -VD S , D rain-to-S ource V oltage (V ) -VD S , D rain-to-S ourc e V oltage (V ) 1 10 10 A I D = -27 A 1.5 1.0 0.5 V G S = -10 V 0.0 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 180 T J , Junction T em perature (°C ) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFR/U5305 C, C apacitanc e (pF ) 2000 C iss V GS C iss C rs s C o ss = = = = 20 0V , f = 1MHz C g s + C g d , C d s S H O R TE D C gd C ds + C g d -V G S , G ate -to-S ou rc e V oltage (V ) 2500 V D S = -4 4V V D S = -2 8V 16 C oss 1500 I D = -1 6A 12 1000 C rss 500 0 10 4 FO R TE S T C IR C U IT S E E FIG U R E 1 3 0 A 1 8 100 0 -V D S , D rain-to-S ourc e V oltage (V ) 30 40 50 A 60 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 1000 1000 O P E R A TIO N IN TH IS A R E A L IM ITE D B Y R D S (o n) -ID , D rain C urrent (A ) -IS D , R everse Drain C urrent (A ) 20 Q G , Total G ate C harge (nC ) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 TJ = 17 5 °C TJ = 25 °C V G S = 0V 10 0.4 0.8 1.2 1.6 -VS D , S ourc e-to-D rain V oltage (V ) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10 A 2.0 100 100µ s 10 1m s 10m s T C = 25 °C T J = 17 5°C S ing le P u lse 1 1 10 100 -VD S , D rain-to-S ourc e V oltage (V ) Fig 8. Maximum Safe Operating Area www.irf.com A IRFR/U5305 RD VDS 35 VGS 30 D.U.T. RG - -ID , Drain Current (A) + VDD 25 -10V Pulse Width ≤ 1 µs Duty Factor ≤ 0.1 % 20 Fig 10a. Switching Time Test Circuit 15 10 td(on) tr t d(off) tf VGS 5 10% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 90% VDS Fig 10b. Switching Time Waveforms Fig 9. Maximum Drain Current Vs. Case Temperature Thermal Response (Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 P DM 0.05 0.02 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFR/U5305 L VDS + - D .U .T RG IA S -2 0 V tp VD D A D R IV E R 0 .0 1 Ω 15V Fig 12a. Unclamped Inductive Test Circuit IAS E A S , S ingle Pulse Avalanc he E nergy (m J) 700 TO P 600 BOTTOM ID -6.6 A -11 A -1 6A 500 400 300 200 100 0 V D D = -2 5V 25 50 A 75 100 125 150 175 S tarting T J , J unc tion T em perature (°C ) Fig 12c. Maximum Avalanche Energy Vs. Drain Current tp V (BR)DSS Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ QG 12V .2µF .3µF -10V QGS QGD D.U.T. +VDS VGS VG -3mA Charge Fig 13a. Basic Gate Charge Waveform 6 IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit www.irf.com IRFR/U5305 Peak Diode Recovery dv/dt Test Circuit + D.U.T ƒ Circuit Layout Considerations • Low Stray Inductance • Ground Plane • Low Leakage Inductance Current Transformer + ‚ - - „ + **  • dv/dt controlled by RG • ISD controlled by Duty Factor "D" • D.U.T. - Device Under Test RG VGS* + - * VDD * Reverse Polarity for P-Channel ** Use P-Channel Driver for P-Channel Measurements Driver Gate Drive P.W. D= Period P.W. Period [VGS=10V ] *** D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode [VDD] Forward Drop Inductor Curent Ripple ≤ 5% [ ISD ] *** VGS = 5.0V for Logic Level and 3V Drive Devices Fig 14. For P-Channel HEXFETS www.irf.com 7 IRFR/U5305 D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) 6 .7 3 (.2 6 5 ) 6 .3 5 (.2 5 0 ) -A 1 .2 7 (.0 5 0 ) 0 .8 8 (.0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 1 .1 4 (.0 4 5 ) 0 .8 9 (.0 3 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 (.2 4 5 ) 5 .9 7 (.2 3 5 ) 1.0 2 (.0 4 0 ) 1.6 4 (.0 2 5 ) 1 2 1 0 .4 2 (.4 1 0 ) 9 .4 0 (.3 7 0 ) 0 .5 1 (.0 2 0 ) M IN . -B 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 2X 1 .1 4 (.0 4 5 ) 0 .7 6 (.0 3 0 ) L E A D A S S IG N M E N T S 1 - GATE 3 2 - D R A IN 3 - S OU R CE 4 - D R A IN 0 .8 9 (.0 3 5 ) 3X 0 .6 4 (.0 2 5 ) 0 .2 5 ( .0 1 0 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) M A M B N O TE S : 2 .2 8 ( .0 9 0 ) 1 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 4 .5 7 ( .1 8 0 ) 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R M S T O J E D E C O U T L IN E T O -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0 .1 6 (.0 0 6 ) . D-Pak (TO-252AA) Part Marking Information 8 www.irf.com IRFR/U5305 I-Pak (TO-251AA) Package Outline Dimensions are shown in millimeters (inches) 6 .7 3 (.26 5 ) 6 .3 5 (.25 0 ) 2 .3 8 (.0 9 4 ) 2 .1 9 (.0 8 6 ) -A 1 .2 7 ( .0 5 0 ) 0 .8 8 ( .0 3 5 ) 5 .4 6 (.2 1 5 ) 5 .2 1 (.2 0 5 ) 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) L E A D A S S IG N M E N T S 4 6 .4 5 (.2 4 5 ) 5 .6 8 (.2 2 4 ) 6 .2 2 ( .2 4 5 ) 5 .9 7 ( .2 3 5 ) 1 .5 2 (.0 6 0 ) 1 .1 5 (.0 4 5 ) 1 2 2.2 8 (.0 9 0) 1.9 1 (.0 7 5) 1 .1 4 (.0 45 ) 0 .7 6 (.0 30 ) 2 .28 (.0 9 0 ) 2X 3 - SOURCE 4 - D R A IN 3 -B - 3X 1 - GATE 2 - D R A IN 3X 9 .6 5 ( .3 8 0 ) 8 .8 9 ( .3 5 0 ) N O TE S : 1 D IM E N S IO N IN G & TO L E R A N C IN G P E R A N S I Y 1 4 .5M , 19 8 2 . 2 C O N T R O L L IN G D IM E N S IO N : IN C H . 3 C O N F O R MS TO J E D E C O U T L IN E TO -2 5 2 A A . 4 D IM E N S IO N S S H O W N A R E B E F O R E S O L D E R D IP , S O L D E R D IP M A X. + 0.1 6 (.0 0 6 ). 0 .8 9 (.0 35 ) 0 .6 4 (.0 25 ) 1 .1 4 ( .0 4 5 ) 0 .8 9 ( .0 3 5 ) 0 .2 5 (.0 1 0 ) M A M B 0 .5 8 (.0 2 3 ) 0 .4 6 (.0 1 8 ) I-Pak (TO-251AA) Part Marking Information www.irf.com 9 IRFR/U5305 D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR 1 6 .3 ( .6 4 1 ) 1 5 .7 ( .6 1 9 ) 1 2 .1 ( .4 7 6 ) 1 1 .9 ( .4 6 9 ) FE E D D IR E C TIO N TR L 1 6 .3 ( .64 1 ) 1 5 .7 ( .61 9 ) 8 .1 ( .3 18 ) 7 .9 ( .3 12 ) FE E D D IR E C T IO N N O T ES : 1 . C O N T R O L L IN G D IM EN S IO N : M IL L IM ET E R . 2 . AL L D IM EN SIO N S AR E SH O W N IN M IL L IM ET E R S ( IN C H E S ). 3 . O U TL IN E C O N F O R M S T O E IA -4 81 & E IA -54 1 . 1 3 IN C H 16 m m N O T ES : 1 . O U TL IN E C O N F O R M S T O E IA-4 8 1 . IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: ++ 44 (0)20 8645 8000 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 (0) 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 011 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0)3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 (0)838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673 Tel: 886-(0)2 2377 9936 Data and specifications subject to change without notice. 10/00 10 www.irf.com Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/