IRFR5305

IRFR5305 P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 RDS(on) () ID (A) 0.020 at VGS = - 10 V - 50 0.025 at VGS = - 4.5 V - 45 • TrenchFET® Power MOSFET • Material categorization: APPLICATIONS • Load Switch JS TO-252 S MI G CR S O D G D Top View P-Channel MOSFET mi Se ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted) Parameter Gate-Source Voltage Limit VDS - 60 VGS ± 20 ID - 50 - 40 IDM - 160 IAS - 50 TC = 25 °C TC = 125 °C Pulsed Drain Current Avalanche Current uc Energya nd Continuous Drain Current (TJ = 175 °C) Single Pulse Avalanche Symbol co Drain-Source Voltage EAS L = 0.1 mH TC = 25 °C Power Dissipation A 125 mJ W 2.5b, c TJ, Tstg to Operating Junction and Storage Temperature Range V 113c PD TA = 25 °C Unit Symbol Typical Maximum 15 18 - 55 to 150 °C r THERMAL RESISTANCE RATINGS Parameter t  10 s Junction-to-Ambientb Steady State RthJA RthJC Junction-to-Case 40 50 0.82 1.1 Unit °C/W Notes: a. Duty cycle  1 %. b. When mounted on 1" square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited. www.jsmsemi.com 第１／６页 IRFR5305 P-Channel 60 V (D-S) MOSFET SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) Parameter Symbol Test Conditions Min. VDS VGS = 0 V, ID = - 250 µA - 60 VGS(th) VDS = VGS, ID = - 250 µA - 1.5 IGSS VDS = 0 V, VGS = ± 20 V Typ. Max. Unit Static Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage IDSS Zero Gate Voltage Drain Current On-State Drain Currenta JS Forward Transconductance -1 VDS = - 60 V, VGS = 0 V, TJ = 125 °C - 50 VDS = - 60 V, VGS = 0 V, TJ = 150 °C - 100 VDS = -5 V, VGS = - 10 V RDS(on) Dynamic VGS = - 10 V, ID = - 40 A, TJ = 150 °C 0.035 VGS = - 4.5 V, ID = - 14 A 0.025 VDS = - 15 V, ID = - 17 A 61 Ciss Input Capacitance Total Gate Chargec Crss 305 Qg 110 Gate-Drain Chargec Qgd Turn-On Delay Timec td(on) c tr Turn-Off Delay Timec td(off) Rise Time 165 nC 19 15 23 70 105 175 260 Ω 175 260 tf IS pF VDD = - 30 V, RL = 0.6 Ω ID ≅ - 40 A, VGEN = - 10 V, RG = 6 Source-Drain Diode Ratings and Characteristics TC = 25 Continuous Current S 28 °Cb co Fall Timec VDS = - 30 V, VGS = - 10 V, ID = - 40 A mi Gate-Source Charge Qgs  0.040 380 Se c VGS = 0 V, VDS = - 25 V, f = 1 MHz O Reverse Transfer Capacitance µA 2950 Coss Output Capacitance nA 0.025 0.030 gfs V A 0.020 VGS = - 10 V, ID = - 40 A, TJ = 125 °C CR b - 50 VGS = - 10 V, ID = - 17 A MI a ± 100 VDS = - 60 V, VGS = 0 V ID(on) Drain-Source On-State Resistancea -3 - 40 ns nd A Pulsed Current ISM Forward Voltagea VSD IF = - 40 A, VGS = 0 V -1 - 1.6 V trr IF = - 40 A, dI/dt = 100 A/µs 45 70 ns r to Notes: a. Pulse test; pulse width  300 µs, duty cycle  2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. uc Reverse Recovery Time - 80 Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.jsmsemi.com 第２／６页 IRFR5305 P-Channel 60 V (D-S) MOSFET TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) 80 80 VGS = 10 thru 4 V 70 70 60 I D - Drain Current (A) I D - Drain Current (A) 60 50 40 30 3V 20 50 40 30 TC = 125 ° C 20 JS 10 0 1 - 55 °C MI 0 25 ° C 10 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 60 3.0 3.5 4.0 70 80 0.050 0.040 VGS = 4.5 V mi R DS(on) - On-Resistance (Ω) 125 °C Se 40 20 0.030 VGS = 10 V 0.020 co g fs - Transconductance (S) 2.5 25 °C 80 0.000 0 10 20 30 40 50 nd 0 0 60 VGS - Gate-to-Source Voltage (V) 10 Ciss 2000 1500 1000 Coss Crss 0 40 50 60 ID - Drain Current (A) VDS = 30 V ID = 40 A 8 r VGS - Gate-to-Source Voltage (V) 3000 0 30 to 3500 500 20 uc 4000 2500 10 On-Resistance vs. Drain Current Transconductance C - Capacitance (pF) 2.0 0.060 O TC = - 55 °C 1.5 Transfer Characteristics CR Output Characteristics 100 1.0 VGS - Gate-to-Source Voltage (V) 6 4 2 0 10 20 30 40 50 60 0 VDS - Drain-to-Source Voltage (V) 20 40 60 80 100 120 Qg - Total Gate Charge (nC) Capacitance Gate Charge www.jsmsemi.com 第３／６页 IRFR5305 P-Channel 60 V (D-S) MOSFET TYPICAL CHARACTERISTICS 100 1.8 I S - Source Current (A) VGS = 10 V ID = 17 A 1.6 1.4 1.2 1.0 0.8 0.6 - 50 - 25 0 MI JS R DS(on) - On-Resistance (Normalized) 2.0 25 50 75 TJ = 150 °C TJ = 25 °C 10 1 100 125 0.0 150 0.6 1.2 0.3 0.9 VSD - Source-to-Drain Voltage (V) TJ - Junction Temperature (°C) 1.5 CR Source-Drain Diode Forward Voltage On-Resistance vs. Junction Temperature THERMAL RATINGS (25 °C, unless otherwise noted) 100 O 50 Limited by R DS(on)* 30 P(t) = 0.0001 10 BVDSS Limited mi I D - Drain Current (A) Se 20 10 P(t) = 0.001 co I D - Drain Current (A) 40 5 0 25 50 75 100 125 1 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) * VGS > minimum VGS at which RDS(on) is specified uc TC - Case Temperature (°C) 150 P(t) = 0.1 P(t) = 1 nd 0 Drain Current vs. Case Temperature Safe Operating Area to 2 1 Duty Cycle = 0.5 r Normalized Effective Transient Thermal Impedance P(t) = 0.01 TC = 25 °C Single Pulse 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 10 -3 10 -2 Square Wave Pulse Duration (s) 10 -1 1 Normalized Thermal Transient Impedance, Junction-to-Case www.jsmsemi.com 第４／６页 IRFR5305 P-Channel 60 V (D-S) MOSFET TO-252AA CASE OUTLINE E MILLIMETERS A C2 H D L3 b3 b2 CR e1 L gage plane height (0.5 mm) L4 MI e L5 JS b C A1 D1 O MIN. MAX. MIN. MAX. A 2.18 2.38 0.086 0.094 A1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 C 0.46 0.61 0.018 0.024 C2 0.46 0.89 0.018 0.035 D 5.97 6.22 0.235 0.245 D1 5.21 - 0.205 0.265 E 6.35 6.73 0.250 E1 4.32 - 0.170 - H 9.40 10.41 0.370 0.410 e 2.28 BSC 0.090 BSC e1 4.56 BSC 0.180 BSC L 1.40 1.78 0.055 0.070 L3 0.89 1.27 0.035 0.050 L4 - 1.02 - 0.040 L5 1.14 1.52 0.045 0.060 ECN: X12-0247-Rev. M, 24-Dec-12 DWG: 5347 mi Se E1 INCHES DIM. Note • Dimension L3 is for reference only. co r to uc nd www.jsmsemi.com 第５／６页 IRFR5305 P-Channel 60 V (D-S) MOSFET RECOMMENDED MINIMUM PADS FOR DPAK (TO-252) 0.224 0.243 (10.668) 0.420 mi 0.087 (2.202) Se 0.090 O 0.180 0.055 co (4.572) (2.286) CR MI JS (6.180) (5.690) (1.397) r to uc nd Recommended Minimum Pads Dimensions in Inches/(mm) www.jsmsemi.com 第６／６页