IRFS7534-7PPBF

StrongIRFET™ IRFS7534-7PPbF HEXFET® Power MOSFET Application  Brushed motor drive applications  BLDC motor drive applications  Battery powered circuits  Half-bridge and full-bridge topologies  Synchronous rectifier applications  Resonant mode power supplies  OR-ing and redundant power switches  DC/DC and AC/DC converters  DC/AC inverters   VDSS 60V RDS(on) typ. 1.60m max 1.95m D G S ID (Silicon Limited) 255A ID (Package Limited) 240A Benefits  Improved gate, avalanche and dynamic dV/dt ruggedness  Fully characterized capacitance and avalanche SOA  Enhanced body diode dV/dt and dI/dt capability  Lead-free, RoHS compliant G Gate Package Type IRFS7534-7PPbF D2Pak-7PIN Standard Pack Form Quantity Tube 50 Tape and Reel Left 800 8 Complete Part Number IRFS7534-7PPbF IRFS7534TRL7PP Limited By Package 250 6 T J = 125°C 4 2 200 150 100 50 T J = 25°C 0 0 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 S Source 300 ID = 100A ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) Base Part Number D Drain www.irf.com © 2014 International Rectifier 25 50 75 100 125 150 175 T C , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 5, 2014 IRFS7534-7PPbF   Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Silicon Limited) Continuous Drain Current, VGS @ 10V (Package Limited) Pulsed Drain Current  Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Max. 255 180 240 790 290 2.0 ± 20 Units A W W/°C V -55 to + 175   °C   300 Avalanche Characteristics  Symbol Parameter EAS (Thermally limited) Single Pulse Avalanche Energy  EAS (Thermally limited) Single Pulse Avalanche Energy  IAR Avalanche Current  Repetitive Avalanche Energy  EAR Thermal Resistance   Symbol Parameter Junction-to-Case  RJC Junction-to-Ambient  RJA Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) IDSS Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance RG Max 370 773 Units mJ   See Fig 15, 16, 23a, 23b Typ. ––– ––– Min. 60 ––– ––– ––– 2.1 ––– ––– ––– ––– ––– Max. 0.51 40 A mJ Units °C/W   Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 46 ––– mV/°C Reference to 25°C, ID = 1mA 1.60 1.95 VGS = 10V, ID = 100A  m 2.00 ––– VGS = 6.0V, ID = 50A  ––– 3.7 V VDS = VGS, ID = 250µA ––– 1.0 VDS = 60V, VGS = 0V µA ––– 150 VDS = 60V,VGS = 0V,TJ =125°C ––– 100 VGS = 20V nA ––– -100 VGS = -20V 1.9 –––  Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 240A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature.  Limited by TJmax, starting TJ = 25°C, L = 74µH, RG = 50, IAS = 100A, VGS =10V. ISD  100A, di/dt  1240A/µs, VDD  V(BR)DSS, TJ 175°C. Pulse width  400µs; duty cycle  2%.  Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS.  Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS.  R is measured at TJ approximately 90°C.  Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 39A, VGS =10V. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.please refer to application note to AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 2 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFS7534-7PPbF   Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg - Qgd) Turn-On Delay Time Rise Time Min. 190 ––– ––– ––– ––– ––– ––– Typ. Max. Units Conditions ––– ––– S VDS = 10V, ID =100A 200 300 ID = 100A 50 ––– VDS = 30V nC   59 ––– VGS = 10V 141 ––– 140 ––– VDD = 30V ID = 100A 120 ––– ns 195 ––– RG= 2.7 VGS = 10V 86 ––– td(off) Turn-Off Delay Time ––– tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance ––– ––– ––– ––– Coss eff.(ER) Effective Output Capacitance (Energy Related) ––– 900 ––– VGS = 0V, VDS = 0V to 48V Coss eff.(TR) Output Capacitance (Time Related) ––– 1150 ––– VGS = 0V, VDS = 0V to 48V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 255 ––– ––– 790 VSD Diode Forward Voltage ––– ––– 1.2 dv/dt Peak Diode Recovery dv/dt  trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– ––– 9.4 45 48 64 78 2.4 ––– ––– ––– ––– ––– ––– 9990 915 590 ––– ––– ––– VGS = 0V VDS = 25V pF   ƒ = 1.0MHz Diode Characteristics   Symbol IS ISM 3 www.irf.com © 2013 International Rectifier A V Conditions MOSFET symbol showing the integral reverse p-n junction diode. D G S TJ = 25°C,IS = 100A,VGS = 0V  V/ns TJ = 175°C,IS =100A,VDS = 60V TJ = 25°C VDD = 51V ns TJ = 125°C IF = 100A, TJ = 25°C di/dt = 100A/µs  nC TJ = 125°C   A TJ = 25°C  Submit Datasheet Feedback November 5, 2014 IRFS7534-7PPbF   1000 1000 ID, Drain-to-Source Current (A) 100 BOTTOM 10 TOP ID, Drain-to-Source Current (A) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 100 1 4.5V 0.1 60µs PULSE WIDTH BOTTOM 4.5V 10 60µs PULSE WIDTH Tj = 175°C Tj = 25°C 1 0.01 0.1 1 10 100 0.1 1000 1000 100 1000 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 10 Fig 4. Typical Output Characteristics Fig 3. Typical Output Characteristics 100 T J = 175°C 10 T J = 25°C 1 VDS = 25V 60µs PULSE WIDTH 0.1 ID = 100A VGS = 10V 2.0 1.5 1.0 0.5 2.0 3.0 4.0 5.0 6.0 7.0 8.0 -60 -40 -20 0 20 40 60 80 100120140160180 VGS, Gate-to-Source Voltage (V) T J , Junction Temperature (°C) Fig 5. Typical Transfer Characteristics 100000 Fig 6. Normalized On-Resistance vs. Temperature 14.0 VGS = 0V, f = 1 MHZ C iss = C gs + C gd, C ds SHORTED VGS, Gate-to-Source Voltage (V) C rss = C gd C oss = C ds + C gd C, Capacitance (pF) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) Ciss 10000 Coss Crss 1000 ID= 100A 12.0 VDS= 48V VDS= 30V 10.0 VDS= 12V 8.0 6.0 4.0 2.0 0.0 100 1 10 100 VDS, Drain-to-Source Voltage (V) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage 4 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V www.irf.com © 2013 International Rectifier 0 50 100 150 200 250 QG, Total Gate Charge (nC) Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage Submit Datasheet Feedback November 5, 2014 IRFS7534-7PPbF   1000 100µsec ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1msec T J = 175°C 100 T J = 25°C 10 1 100 Limited by package OPERATION IN THIS AREA LIMITED BY RDS(on) 10 10msec 1 Tc = 25°C Tj = 175°C Single Pulse VGS = 0V 0.1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0.1 VSD, Source-to-Drain Voltage (V) 1 10 VDS, Drain-toSource Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage Fig 10. Maximum Safe Operating Area 1.6 78 Id = 1.0mA 76 1.2 74 Energy (µJ) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) DC 72 70 68 0.8 0.4 66 0.0 64 -10 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( °C ) 10 20 30 40 50 60 VDS, Drain-to-Source Voltage (V) Fig 11. Drain-to-Source Breakdown Voltage RDS(on), Drain-to -Source On Resistance ( m) 0 Fig 12. Typical Coss Stored Energy 4.0 Vgs = 5.5V Vgs = 6.0V Vgs = 7.0V Vgs = 8.0V Vgs = 10V 3.5 3.0 2.5 2.0 1.5 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFS7534-7PPbF   Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart =25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 15. Avalanche Current vs. Pulse width EAR , Avalanche Energy (mJ) 400 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 100A 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2013 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav   Submit Datasheet Feedback November 5, 2014 IRFS7534-7PPbF   20 IF = 60A V R = 51V TJ = 25°C 3.5 15 3.0 TJ = 125°C 2.5 IRRM (A) VGS(th) , Gate threshold Voltage (V) 4.0 ID = 250µA ID = 1.0mA ID = 1.0A 2.0 1.5 10 5 1.0 0.5 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 200 T J , Temperature ( °C ) 600 800 1000 diF /dt (A/µs) Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 20 400 IF = 100A V R = 51V TJ = 25°C TJ = 125°C IF = 60A V R = 51V TJ = 25°C 300 TJ = 125°C QRR (nC) 15 IRRM (A) 400 10 5 200 100 0 0 0 200 400 600 800 1000 0 200 diF /dt (A/µs) 400 600 800 1000 diF /dt (A/µs) Fig 20. Typical Stored Charge vs. dif/dt Fig 19. Typical Recovery Current vs. dif/dt 400 IF = 100A V R = 51V TJ = 25°C 300 QRR (nC) TJ = 125°C 200 100 0 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFS7534-7PPbF   Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V L VDS D.U.T RG IAS 20V tp DRIVER + V - DD A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD  Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2013 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback November 5, 2014 IRFS7534-7PPbF   D2Pak-7Pin Package Outline (Dimensions are shown in millimeters (inches)) Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFS7534-7PPbF   D2Pak-7Pin Part Marking Information D2Pak-7Pin Tape and Reel Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFS7534-7PPbF   Qualification Information†   Industrial (per JEDEC JESD47F) †† Qualification Level   Moisture Sensitivity Level D2Pak-7Pin MSL1 Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/5/2014 Comments   Updated EAS (L =1mH) = 773mJ on page 2 Updated note 9 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 39A, VGS =10V” on page 2 IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 11 www.irf.com © 2013 International Rectifier Submit Datasheet Feedback November 5, 2014 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. 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