IRGR4610DPbF
IRGS4610DPbF
IRGB4610DPbF
Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode
C
VCES = 600V
C
C
C
IC = 10A, TC = 100°C
G
tsc > 5µs, Tjmax = 175°C
E
VCE(on) typ. = 1.7V @ 6A
n-channel
Applications
• Appliance Drives
• Inverters
• UPS
G
G
G
D-Pak
IRGR4610DPbF
D2-Pak
IRGS4610DPbF
C
E
TO-220AB
IRGB4610DPbF
G
C
E
G ate
C ollector
Em itter
→
Features
Low VCE(ON) and switching losses
Square RBSOA and maximum junction temperature 175°C
Positive VCE(ON) temperature coefficient and tighter distribution of
parameters
5μs short circuit SOA
Lead-free, RoHS compliant
Base part number
E
E
D-PAK
IRGS4610DPbF
D PAK
IRGB4610DPbF
TO-220AB
Excellent current sharing in parallel operation
Enables short circuit protection scheme
Environmentally friendly
Standard Pack
Form
Tube
Tape and Reel
Tape and Reel Right
Tape and Reel Left
Tube
Tape and Reel Right
Tape and Reel Left
Tube
Package Type
IRGR4610DPbF
Benefits
High efficiency in a wide range of applications and switching frequencies
Improved reliability due to rugged hard switching performance and higher
power capability
2
Orderable Part Number
Quantity
75
2000
3000
3000
50
800
800
50
IRGR4610DPbF
IRGR4610DTRPbF
IRGR4610DTRRPbF
IRGR4610DTRLPbF
IRGS4610DPbF
IRGS4610DTRRPbF
IRGS4610DTRLPbF
IRGB4610DPbF
Absolute Maximum Ratings
VCES
IC@ T C = 25°C
IC@ T C = 100°C
ICM
ILM
IF @ T C = 25°C
IF @ T C=100°C
IFM
VGE
PD @ T C =25°
PD @ T C =100°
TJ
T STG
1
Parameter
Collector-to-Emitter Breakdown Voltage
Continuous Collector Current
Continuous Collector Current
Max.
600
16
10
Pulsed Collector Current, VGE = 15V
Clamped Inductive Load Current, VGE = 20V
Diode Continuous Forward Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Continuous Gate-to-Emitter Voltage
Transient Gate-to-Emitter Voltage
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
TO-220
c
f
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Units
V
18
24
10
6
24
± 20
± 30
77
39
A
V
W
-40 to + 175
°C
300
10lbf. In (1.1 N.m)
November 14, 2014
IRGR/S/B4610DPbF
Thermal Resistance
Parameter
Min.
Typ.
Max.
–––
–––
1.9
–––
–––
6.3
RθJC
d
Thermal Resistance, Junction-to-Case -(Diode)d
RθCS
Thermal Resistance, Case-to-Sink (flat, greased surface) (TO-220)
–––
0.5
–––
Thermal Resistance, Junction-to-Ambient (PCB mount) (D-PAK)
–––
–––
50
–––
–––
110
–––
–––
40
–––
–––
62
RθJC
RθJA
Thermal Resistance, Junction-to-Case -(IGBT)
h
Thermal Resistance, Junction-to-Ambient (D-PAK)
Thermal Resistance, Junction-to-Ambient (PCB mount, Steady State)
2
h
(D PAK)
Thermal Resistance, Junction-to-Ambient ( Socket mount) (TO-220)
Units
°C/W
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
V(BR)CES
Collector-to-Emitter Breakdown Voltage
600
V
/
T
Temperature
Coeff.
of
Breakdown
Voltage
—
Δ (BR)CES Δ J
—
VCE(on)
Collector-to-Emitter Saturation Voltage
—
—
Gate Threshold Voltage
4.0
VGE(th)
V
/
TJ
Threshold
Voltage
temp.
coefficient
—
GE(th)
Δ
Δ
gfe
Forward Transconductance
—
—
ICES
Collector-to-Emitter Leakage Current
—
VFM
—
Diode Forward Voltage Drop
—
Gate-to-Emitter Leakage Current
—
IGES
Typ.
—
0.36
1.7
2.07
2.14
—
-13
5.8
—
—
1.60
1.30
—
Max. Units
Conditions
—
V
VGE = 0V, Ic =100 μA
—
V/°C VGE = 0V, Ic = 250μA ( 25 -175 oC )
2.0
IC = 6.0A, VGE = 15V, T J = 25°C
—
V
IC = 6.0A, VGE = 15V, T J = 150°C
—
IC = 6.0A, VGE = 15V, T J = 175°C
6.5
V
VCE = VGE, IC = 150μA
—
mV/°C VCE = VGE, IC = 250μA ( 25 -175 oC )
—
S
VCE = 25V, IC = 6.0A, PW =80μS
25
μA VGE = 0V,VCE = 600V
VGE = 0V, VCE = 600V, T J =175°C
250
2.30
V
IF = 6.0A
—
IF = 6.0A, T J = 175°C
±100
nA VGE = ± 20 V
e
Notes:
VCC = 80% (VCES ), VGE = 20V, L = 1.0mH, RG = 100Ω.
Rθ is measured at TJ approximately 90°C.
Refer to AN-1086 for guidelines for measuring V(BR)CES safely.
Pulse width limited by max. junction temperature.
Values influenced by parasitic L and C in measurement
When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application
note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf
2
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November 14, 2014
IRGR/S/B4610DPbF
Switching Characteristics @ T J = 25°C (unless otherwise specified)
Qg
Qge
Qgc
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Eon
Eoff
Etotal
td(on)
tr
td(off)
tf
Cies
Coes
Cres
Parameter
Total Gate Charge (turn-on)
Gate-to-Emitter Charge (turn-on)
Gate-to-Collector Charge (turn-on)
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On delay time
Rise time
Turn-Off delay time
Fall time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RBSOA
Reverse Bias Safe Operating Area
FULL SQUARE
SCSOA
Short Circuit Safe Operating Area
5
—
—
μs
Erec
trr
Irr
Reverse recovery energy of the diode
Diode Reverse recovery time
Peak Reverse Recovery Current
—
178
74
12
—
—
—
—
—
μJ
ns
A
3
Min.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
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Typ.
13
3.0
6.4
56
122
178
27
11
75
17
140
189
329
26
12
95
32
350
29
10
Max.
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Units
nC
μJ
ns
μJ
ns
pF
Conditions
IC = 6.0A
VCC = 400V
VGE = 15V
IC = 6.0A, VCC = 400V, VGE = 15V
RG = 47Ω, L=1mH, LS= 150nH, T J = 25°C
Energy losses include tail and diode reverse recovery
IC = 6.0A, VCC = 400V
RG = 47Ω, L=1mH, LS= 150nH
T J = 25°C
g
IC = 6.0A, VCC = 400V, VGE = 15V
RG = 47Ω, L=1mH, LS= 150nH, T J = 175°C
Energy losses include tail and diode reverse recovery
IC = 6.0A, VCC = 400V
RG = 47Ω, L=1mH, LS= 150nH
T J = 175°C
g
VGE = 0V
VCC = 30V
f = 1Mhz
T J = 175°C, IC = 24A
VCC = 500V, Vp =600V
RG = 100Ω, VGE = +20V to 0V
VCC = 400V, Vp =600V
RG = 100Ω, VGE = +15V to 0V
o
T J = 175 C
VCC = 400V, IF = 6.0A
VGE = 15V, Rg = 47Ω, L=1mH, LS=150nH
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November 14, 2014
IRGR/S/B4610DPbF
18
80
16
70
14
60
Ptot (W)
IC (A)
12
10
8
50
40
30
6
20
4
10
2
0
0
25
50
75
100
125
150
25
175
50
75
100
125
150
175
TC (°C)
TC (°C)
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
100
100
10
10
IC A)
10μsec
IC (A)
100μsec
DC
1
1
Tc = 25°C
Tj = 175°C
Single Pulse
0
0.1
1
10
100
10
1000
VCE (V)
VCE (V)
20
20
Top
15
V
= 18V
GE
V
= 15V
GE
VGE = 12V
15
V
= 10V
GE
Bottom VGE = 8.0V
10
ICE (A)
ICE (A)
1000
Fig. 4 - Reverse Bias SOA
TJ = 175°C, VGE = 20V
Fig. 3 - Forward SOA,
TC = 25°C, TJ ≤ 175°C, VGE = 15V
Top
Bottom
10
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
5
5
0
0
0
2
4
6
8
10
VCE (V)
Fig. 5 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80μs
4
100
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0
2
4
6
8
10
VCE (V)
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80μs
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November 14, 2014
IRGR/S/B4610DPbF
20
Top
15
Bottom
20
V
= 18V
GE
V
= 15V
GE
V
= 12V
GE
V
= 10V
GE
V
= 8.0V
GE
18
16
-40°C
25°C
175°C
14
IF (A)
ICE (A)
12
10
10
8
6
5
4
2
0
0
0
2
4
6
8
10
0.0
1.0
2.0
VF (V)
VCE (V)
Fig. 7 - Typ. IGBT Output Characteristics
TJ = 175°C; tp = 80μs
Fig. 8 - Typ. Diode Forward Characteristics
tp = 80μs
10
8
8
ICE = 3.0A
VCE (V)
VCE (V)
10
6
ICE = 6.0A
ICE = 12A
4
2
6
ICE = 3.0A
ICE = 6.0A
ICE = 12A
4
2
0
0
5
10
15
20
5
10
VGE (V)
20
Fig. 10 - Typical VCE vs. VGE
TJ = 25°C
10
IC, Collector-to-Emitter Current (A)
20
8
VCE (V)
15
VGE (V)
Fig. 9 - Typical VCE vs. VGE
TJ = -40°C
ICE = 3.0A
ICE = 6.0A
6
ICE = 12A
4
2
18
T J = 25°C
T J = 175°C
16
14
12
10
8
6
4
2
0
0
5
10
15
20
VGE (V)
Fig. 11 - Typical VCE vs. VGE
TJ = 175°C
5
3.0
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4
6
8
10
12
14
16
VGE, Gate-to-Emitter Voltage (V)
Fig. 12 - Typ. Transfer Characteristics
VCE = 50V; tp = 10μs
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November 14, 2014
IRGR/S/B4610DPbF
400
1000
350
Swiching Time (ns)
Energy (μJ)
300
250
200
EOFF
150
tdOFF
100
tF
tR
EON
100
50
1
0
2
4
6
8
10
12
14
2
Fig. 13 - Typ. Energy Loss vs. IC
TJ = 175°C; L = 1mH; VCE = 400V, RG = 47Ω; VGE = 15V.
1000
220
200
4
6
8
10
12
14
IC (A)
IC (A)
Fig. 14 - Typ. Switching Time vs. IC
TJ = 175°C; L=1mH; VCE= 400V
RG= 47Ω; VGE= 15V
EOFF
Swiching Time (ns)
180
Energy (μJ)
tdON
10
160
EON
140
120
tdOFF
100
tF
tdON
10
tR
100
80
1
60
0
25
50
75
100
0
125
50
100
125
Fig. 16- Typ. Switching Time vs. RG
TJ = 175°C; L=1mH; VCE= 400V
ICE= 6.0A; VGE= 15V
Fig. 15 - Typ. Energy Loss vs. RG
TJ = 175°C; L = 1mH; VCE = 400V, ICE = 6.0A; VGE = 15V
22
30
20
25
RG = 10Ω
18
20
15
IRR (A)
16
RG = 22Ω
10
RG = 47Ω
5
RG = 100Ω
14
12
10
8
6
0
2
4
6
8
10
12
14
0
25
50
Fig. 17 - Typical Diode IRR vs. IF
TJ = 175°C
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75
100
125
RG (Ω)
IF (A)
6
75
RG (Ω)
Rg (Ω)
IRR (A)
25
Fig. 18 - Typical Diode IRR vs. RG
TJ = 175°C; IF = 6.0A
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November 14, 2014
IRGR/S/B4610DPbF
1200
20
18
1000
12A
10Ω
QRR (nC)
IRR (A)
16
14
12
22Ω
800
47Ω
6.0A
600
10
100Ω
400
3.0A
8
200
6
0
200
400
600
800
1000
0
1200
500
1500
diF /dt (A/μs)
diF /dt (A/μs)
Fig. 20 - Typical Diode QRR
VCC= 400V; VGE= 15V; TJ = 175°C
Fig. 19- Typical Diode IRR vs. diF/dt
VCC= 400V; VGE= 15V;
ICE= 6.0A; TJ = 175°C
50
20
350
300
40
Time (μs)
RG = 47Ω
10
30
5
20
Current (A)
Isc
RG = 22Ω
200
Tsc
15
RG = 10Ω
250
Energy (μJ)
1000
150
RG = 100Ω
100
10
0
50
2
4
6
8
10
12
8
14
10
12
IF (A)
18
Fig. 22- Typ. VGE vs. Short Circuit Time
VCC=400V, TC =25°C
16
1000
VGE, Gate-to-Emitter Voltage (V)
Cies
Capacitance (pF)
16
VGE (V)
Fig. 21 - Typical Diode ERR vs. IF
TJ = 175°C
100
Coes
10
Cres
V CES = 400V
V CES = 300V
14
12
10
8
6
4
2
0
1
0
100
200
300
400
500
VCE (V)
Fig. 23- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
7
14
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0
2
4
6
8
10
12
14
Q G, Total Gate Charge (nC)
Fig. 24 - Typical Gate Charge vs. VGE
ICE = 6.0A, L=600μH
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November 14, 2014
IRGR/S/B4610DPbF
Thermal Response ( Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.1
τJ
0.02
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
Ri (°C/W)
R4
R4
τC
τ
τ2
τ1
τ3
τ2
τ4
τ3
τ4
Ci= τi/Ri
Ci i/Ri
0.01
SINGLE PULSE
( THERMAL RESPONSE )
0.001
1E-006
1E-005
τi (sec)
0.0415
0.000005
0.7262
0.000076
0.7721
0.000810
0.4016
0.004929
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 25. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
10
Thermal Response ( Z thJC )
D = 0.50
0.20
1
0.10
0.05
τJ
0.02
0.1
0.01
R1
R1
τJ
τ1
R2
R2
R3
R3
Ri (°C/W)
R4
R4
τC
τ
τ1
τ2
τ2
τ3
τ3
τ4
τ4
Ci= τi/Ri
Ci i/Ri
1E-005
0.0001
0.000023
1.7733
0.000165
2.9352
0.001493
1.3704
0.013255
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
0.01
1E-006
τi (sec)
0.2195
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig. 26. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
8
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November 14, 2014
IRGR/S/B4610DPbF
L
L
DUT
0
VCC
1K
Fig.C.T.1 - Gate Charge Circuit (turn-off)
Fig.C.T.3 - S.C.SOA Circuit
Fig.C.T.5 - Resistive Load Circuit
9
www.irf.com © 2014 International Rectifier
80 V
+
-
DUT
Rg
480V
Fig.C.T.2 - RBSOA Circuit
Fig.C.T.4 - Switching Loss Circuit
Fig.C.T.6 - Typical Filter Circuit for
V(BR)CES Measurement
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November 14, 2014
IRGR/S/B4610DPbF
600
12
600
500
10
500
400
8
400
6
300
90% ICE
200
4
5% ICE
100
VCE (V)
VCE (V)
tf
300
30
25
tr
TEST
CURRENT
90% test
current
2
100
0
0
-2
-100
10
10% test
current
0
0.2
0.4
0.6
0.8
0
Eon Loss
4.3
1
4.5
Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 175°C using Fig. CT.4
100
t RR
-5
-400
-10
-500
-15
-20
0.05
0.15
0.25
time (μS)
WF.3- Typ. Diode Recovery Waveform
@ TJ = 175°C using CT.4
10
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Vce (V)
VF (V)
10%
Peak
IRR
Peak
IRR
-600
-0.05
450
5
0
80
500
10
QRR
-200
-300
4.7
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 175°C using Fig. CT.4
15
-100
-5
time (μs)
time(μs)
0
5
5% VCE
Eoff Loss
-100
-0.2
15
200
5% VCE
0
20
VCE
70
400
60
350
50
300
40
250
200
30
ICE
20
150
10
100
0
50
-10
0
-20
-2 -1 0 1 2 3 4 5 6 7 8
Time (uS)
WF.4- Typ. Short Circuit Waveform
@ TJ = 25°C using CT.3
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November 14, 2014
IRGR/S/B4610DPbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: THIS IS AN IRFR120
WITH AS S EMBLY
LOT CODE 1234
AS S EMBLED ON WW 16, 1999
IN T HE AS SEMBLY LINE "A"
INT ERNAT IONAL
RECTIFIER
LOGO
PART NUMBER
IRFU120
12
916A
34
AS S EMBLY
LOT CODE
DATE CODE
YEAR 9 = 1999
WEEK 16
LINE A
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
11
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November 14, 2014
IRGR/S/B4610DPbF
D-Pak (TO-252AA) Tape & Reel Information (Dimensions are shown in millimeters (inches))
TR
TRR
TRL
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
12
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November 14, 2014
IRGR/S/B4610DPbF
D2Pak Package Outline
Dimensions are shown in millimeters (inches)
D2Pak Part Marking Information
T HIS IS AN IRF530S WIT H
LOT CODE 8024
AS S EMBLED ON WW 02, 2000
IN T HE AS S EMBLY LINE "L"
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
F530S
DAT E CODE
YEAR 0 = 2000
WEEK 02
LINE L
AS S EMBLY
LOT CODE
OR
INT ERNAT IONAL
RECT IFIER
LOGO
AS S EMBLY
LOT CODE
PART NUMBER
F530S
DAT E CODE
P = DES IGNATES LEAD - FREE
PRODUCT (OPT IONAL)
YEAR 0 = 2000
WEEK 02
A = AS S EMBLY S ITE CODE
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
13
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November 14, 2014
IRGR/S/B4610DPbF
D2Pak Tape & Reel Information (Dimensions are shown in millimeters (inches))
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
30.40 (1.197)
MAX.
26.40 (1.039)
24.40 (.961)
3
4
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRGR/S/B4610DPbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
E XAMPLE : T HIS IS AN IRF1010
LOT CODE 1789
AS S E MBLE D ON WW 19, 2000
IN T HE AS S E MBLY LINE "C"
Note: "P" in as s embly line pos ition
indicates "Lead - F ree"
INT E RNAT IONAL
RECT IF IER
L OGO
AS S E MBL Y
LOT CODE
PART NUMBE R
DAT E CODE
YEAR 0 = 2000
WE E K 19
L INE C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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November 14, 2014
IRGR/S/B4610DPbF
Qualification Information†
Industrial
Qualification Level
Moisture Sensitivity Level
(per JEDEC JESD47F)
D-Pak
2
D Pak
TO-220
RoHS Compliant
††
MSL1
N/A
Yes
† Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability
†† Applicable version of JEDEC standard at the time of product release
Revision History
Date
11/14/2014
Comments
• Added note
to IFM Diode Maximum Forward Current on page 1.
• Removed note
to switching losses test condition on page 3.
• Updated package outline on page 15.
f
f
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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November 14, 2014
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