IRGB4630DPBF

IR IGBT IRGB4630DPbF IRGIB4630DPbF IRGP4630D(-E)PbF IRGS4630DPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 600V C C C IC = 30A, TC =100°C tSC ≥ 5µs, TJ(max) = 175°C G C E VCE(ON) typ. = 1.65V @ IC = 18A IRGB4630DPbF TO-220AB E G IRGP4630DPbF TO-247AC Industrial Motor Drive Inverters UPS Welding E C C G G E E IRGIB4630DPbF TO-220AB Full-Pak n-channel G Gate C IRGP4630D-EPbF TO-247AD C Applications • • • • GC C Collector Features C G E IRGS4630DPbF D2Pak E Emitter Benefits Low VCE(ON) and switching losses Square RBSOA and maximum junction temperature 175°C High efficiency in a wide range of applications and switching frequencies Improved reliability due to rugged hard switching performance and high power capability Positive VCE (ON) temperature coefficient and tight distribution Excellent current sharing in parallel operation of parameters 5µs Short Circuit SOA Enables short circuit protection scheme Lead-Free, RoHS Compliant Environmentally friendly Base part number Package Type IRGB4630DPbF IRGIB4630DPbF IRGP4630DPbF IRGP4630D-EPbF TO-220AB TO-220AB Full-Pak TO-247AC TO-247AD IRGS4630DPbF D2Pak 1 Standard Pack Form Quantity Tube 50 Tube 50 Tube 25 Tube 25 Tube 50 Tape and Reel Right 800 Tape and Reel Left 800 Orderable Part Number IRGB4630DPbF IRGIB4630DPbF IRGP4630DPbF IRGP4630D-EPbF IRGS4630DPbF IRGS4630DTRRPbF IRGS4630DTRLPbF 2015-11-23 IRGB/IB/P/S4630D/EPbF Absolute Maximum Ratings Parameter VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ TC = 25°C IF @ TC = 100°C IFM VGE PD @ TC = 25°C PD @ TC = 100°C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulse Collector Current, VGE=15V  Clamped Inductive Load Current, VGE=20V  Diode Continuous Forward Current Diode Continuous Forward Current Diode Maximum Forward Current  Continuous Gate-to-Emitter Voltage Transient Gate to Emitter Voltage Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. (1.6mm from case) Mounting Torque, 6-32 or M3 Screw (TO-220, TO-247) Max. Units 600 47 30 54 72 30 18 72 ±20 ±30 206 103 -40 to +175 V A V W C 300 10 lbf·in (1.1 N·m) Thermal Resistance Parameter 2 RθJC (IGBT) Thermal Resistance Junction-to-Case (D Pak, TO-220) Thermal Resistance Junction-to-Case (TO-220 Full-Pak) Thermal Resistance Junction-to-Case (TO-247) 2 RθJC (Diode) Thermal Resistance Junction-to-Case (D Pak, TO-220) Thermal Resistance Junction-to-Case (TO-220 Full-Pak) Thermal Resistance Junction-to-Case (TO-247) Thermal Resistance, Case-to-Sink (flat, greased surface-TO-220, D2Pak, RθCS TO-220 Full-Pak ) Thermal Resistance Case-to-Sink (TO-247) Thermal Resistance, Junction-to-Ambient (PCB Mount - D2Pak)  RθJA Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220) Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-247) Thermal Resistance, Junction-to-Ambient (Socket Mount –TO-220 Full-Pak) Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — 0.40 ΔV(BR)CES/ΔTJ Temperature Coeff. of Breakdown Voltage — 1.65 — 2.05 Collector-to-Emitter Saturation Voltage VCE(on) — 2.15 Gate Threshold Voltage 4.0 — VGE(th) Threshold Voltage Temp. Coefficient — -18 ΔVGE(th)/ΔTJ gfe Forward Transconductance — 12 — 2.0 ICES Collector-to-Emitter Leakage Current — 550 Gate-to-Emitter Leakage Current IGES — — — 2.3 VFM Diode Forward Voltage Drop — 1.6 2 Min. ––– ––– ––– ––– ––– ––– Typ. ––– ––– ––– ––– ––– ––– Max. 0.73 3.4 0.78 2.0 4.6 2.1 ––– 0.5 ––– ––– ––– ––– ––– ––– 0.24 ––– ––– ––– ––– ––– 40 62 40 65 Units °C/W Max. Units Conditions — V VGE = 0V, IC = 100µA  — V/°C VGE = 0V, IC = 1mA (25°C-175°C) 1.95 IC = 18A, VGE = 15V, TJ = 25°C V — IC = 18A, VGE = 15V, TJ = 150°C — IC = 18A, VGE = 15V, TJ = 175°C 6.5 V VCE = VGE, IC = 500µA — mV/°C VCE = VGE, IC = 1.0mA (25°C-175°C) — S VCE = 50V, IC = 18A, PW = 80µs 25 µA VGE = 0V, VCE = 600V — VGE = 0V, VCE = 600V, TJ = 175°C ±100 nA VGE = ±20V 3.3 V IF = 18A — IF = 18A, TJ = 175°C 2015-11-23 IRGB/IB/P/S4630D/EPbF Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Qg Total Gate Charge — 35 Qge Gate-to-Emitter Charge — 10 Qgc Gate-to-Collector Charge — 15 Eon Turn-On Switching Loss — 95 Eoff Turn-Off Switching Loss — 350 Total Switching Loss — 445 Etotal td(on) Turn-On delay time — 40 tr Rise time — 25 Turn-Off delay time — 105 td(off) tf Fall time — 25 Turn-On Switching Loss — 285 Eon Eoff Turn-Off Switching Loss — 570 Total Switching Loss — 855 Etotal td(on) Turn-On delay time — 40 tr Rise time — 25 Turn-Off delay time — 120 td(off) Fall time — 40 tf Input Capacitance — 1040 Cies Output Capacitance — 87 Coes Cres Reverse Transfer Capacitance — 32 Max — — — — — — — — — — — — — — — — — — — — Units nC µJ ns µJ ns pF RBSOA Reverse Bias Safe Operating Area SCSOA Short Circuit Safe Operating Area 5.0 — — µs Erec trr Irr Reverse Recovery Energy of the Diode Diode Reverse Recovery Time Peak Reverse Recovery Current — — — 260 100 23 — — — µJ ns A FULL SQUARE Conditions IC = 18A VGE = 15V VCC = 400V IC = 18A, VCC = 400V, VGE=15V RG = 22Ω, L = 200µH, LS = 150nH, TJ = 25°C Energy losses include tail & diode reverse recovery  IC = 18A, VCC = 400V, VGE=15V RG = 22Ω, L = 200µH, LS = 150nH, TJ = 175°C Energy losses include tail & diode reverse recovery  VGE = 0V VCC = 30V f = 1.0MHz TJ = 175°C, IC = 72A VCC = 480V, Vp ≤ 600V RG = 22Ω, VGE = +20V to 0V VCC = 400V, Vp ≤ 600V RG = 22Ω, VGE = +15V to 0V TJ = 175°C VCC = 400V, IF = 18A, VGE = 15V, Rg = 22Ω, L = 200µH, LS = 150nH Notes: Limited by maximum junction temperature. Not applicable for Full-Pak package: current value limited by Rθ JC. Rθ is measured at TJ of approximately 90°C. Refer to AN-1086 for guidelines for measuring V(BR)CES safely. Pulse width limited by maximum junction temperature. Values influenced by parasitic L and C in measurement. When mounted on 1” square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994.http://www.irf.com/technical-info/appnotes/an-994.pdf  VCC = 80% (VCES), VGE = 20V, L = 100µH, RG = 22Ω.       3 2015-11-23 50 250 40 200 30 150 Ptot (W) IC (A) IRGB/IB/P/S4630D/EPbF 20 10 100 50 0 25 50 75 100 125 150 0 175 25 50 75 T C (°C) 100 125 150 175 T C (°C) Fig. 2 - Power Dissipation vs. Case Temperature Fig. 1 - Maximum DC Collector Current vs. Case Temperature 100 100 10µsec IC (A) IC (A) 10 100µsec 1 10 1msec Tc = 25°C Tj = 175°C Single Pulse DC 0.1 1 1 10 100 1000 10000 10 100 VCE (V) Fig. 4 - Reverse Bias SOA TJ = 175°C; VGE = 20V Fig. 3 - Forward SOA TC = 25°C; TJ ≤ 175°C; VGE = 15V 90 80 70 90 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 70 60 50 40 50 40 30 30 20 20 10 10 0 0 0 4 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 80 ICE (A) ICE (A) 60 1000 VCE (V) 1 2 3 4 5 6 7 8 0 1 2 3 4 5 6 7 8 VCE (V) VCE (V) Fig. 5 - Typ. IGBT Output Characteristics TJ = -40°C; tp = 80µs Fig. 6 - Typ. IGBT Output Characteristics TJ = 25°C; tp = 80µs 2015-11-23 IRGB/IB/P/S4630D/EPbF 100 90 VGE = 18V VGE = 15V VGE = 12V VGE = 10V VGE = 8.0V 80 70 60 50 IF (A) ICE (A) 60 -40°c 25°C 175°C 80 40 40 30 20 20 10 0 0 1 2 3 4 5 6 7 0 8 0.0 1.0 2.0 20 18 18 16 16 14 14 ICE = 9.0A ICE = 18A ICE = 36A 8 VCE (V) VCE (V) 20 10 12 8 6 4 4 2 2 0 5 10 15 20 5 10 VGE (V) 15 20 VGE (V) Fig. 9 - Typical VCE vs. VGE TJ = -40°C Fig. 10 - Typical VCE vs. VGE TJ = 25°C 20 180 18 160 16 140 14 T J = 25°C T J = 175°C 120 12 ICE = 9.0A ICE = 18A ICE = 36A 10 8 ICE (A) VCE (V) 5.0 ICE = 9.0A ICE = 18A ICE = 36A 10 6 0 100 80 60 6 4 40 2 20 0 0 5 5 4.0 Fig. 8 - Typ. Diode Forward Voltage Drop Characteristics Fig. 7 - Typ. IGBT Output Characteristics TJ = 175°C; tp = 80µs 12 3.0 V F (V) VCE (V) 10 15 20 0 5 10 15 20 VGE (V) VGE (V) Fig. 11 - Typical VCE vs. VGE TJ = 175°C Fig. 12 - Typ. Transfer Characteristics VCE = 50V; tp = 10µs 2015-11-23 IRGB/IB/P/S4630D/EPbF 1400 1000 1200 Swiching Time (ns) Energy (µJ) 1000 EOFF 800 600 EON 400 tdOFF 100 tF tdON 200 tR 0 5 10 15 20 25 30 35 10 40 5 10 15 20 25 IC (A) 30 35 40 45 IC (A) Fig. 14 - Typ. Energy Loss vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V Fig. 15 - Typ. Switching Time vs. IC TJ = 175°C; L = 200µH; VCE = 400V, RG = 22Ω; VGE = 15V 900 1000 800 700 Swiching Time (ns) EOFF Energy (µJ) 600 500 EON 400 300 tdOFF 100 tdON 200 tF 100 tR 0 0 25 50 75 100 10 125 0 25 50 75 100 125 Rg ( Ω) RG (Ω) Fig. 16 - Typ. Energy Loss vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 18A; VGE = 15V Fig. 17 - Typ. Switching Time vs. RG TJ = 175°C; L = 200µH; VCE = 400V, ICE = 18A; VGE = 15V 35 40 RG = 10Ω 30 30 RG = 22Ω 25 25 20 IRR (A) IRR (A) 35 RG = 47Ω 15 15 RG = 100Ω 10 10 5 5 0 0 0 10 20 30 IF (A) Fig. 18 - Typ. Diode IRR vs. IF TJ = 175°C 6 20 40 0 25 50 75 100 125 RG (Ω) Fig. 19 - Typ. Diode IRR vs. RG TJ = 175°C 2015-11-23 IRGB/IB/P/S4630D/EPbF 40 1600 35 1400 10Ω 30 36A QRR (µC) IRR (A) 25 20 15 47Ω 1000 18A 800 100Ω 10 9.0A 600 5 400 0 0 500 1000 0 1500 500 Fig. 20 - Typ. Diode IRR vs. diF/dt VCC = 400V; VGE = 15V; IF = 18A; TJ = 175°C Fig. 21 - Typ. Diode QRR vs. diF/dt VCC = 400V; VGE = 15V; TJ = 175°C RG = 10Ω 300 RG = 22Ω Time (µs) RG = 47Ω 200 150 RG = 100Ω 50 20 120 18 110 16 100 14 90 12 80 10 70 8 60 6 50 4 40 2 30 20 0 0 0 10 20 30 8 40 Current (A) 250 100 10 12 14 16 18 VGE (V) IF (A) Fig. 22 - Typ. Diode ERR vs. IF TJ = 175°C Fig. 23 - VGE vs. Short Circuit Time VCC = 400V; TC = 25°C 16 VGE, Gate-to-Emitter Voltage (V) 10000 Capacitance (pF) 1500 diF /dt (A/µs) 350 Cies 1000 100 Coes Cres V CES = 300V 14 V CES = 400V 12 10 8 6 4 2 0 10 0 20 40 60 80 100 VCE (V) Fig. 24 - Typ. Capacitance vs. VCE VGE= 0V; f = 1MHz 7 1000 diF /dt ( A/µs) 400 Energy (µJ) 22Ω 1200 0 5 10 15 20 25 30 35 Q G, Total Gate Charge (nC) Fig. 25 - Typical Gate Charge vs. VGE ICE = 18A; L = 600µH 2015-11-23 IRGB/IB/P/S4630D/EPbF 1 Thermal Response ( Z thJC ) D = 0.50 0.20 0.1 0.10 τJ 0.05 0.02 0.01 R1 R1 τJ τ1 R2 R2 τC τ2 τ1 τ2 Ci= τi /Ri Ci = τi/Ri 0.01 SINGLE PULSE ( THERMAL RESPONSE ) 0.001 1E-006 τC 1E-005 Ri (°C/W) τi (sec) 0.3193 0.000273 0.4104 0.004525 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.0001 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 26 - Maximum Transient Thermal Impedance, Junction-to-Case (IGBT-TO-220Pak) Thermal Response ( Z thJC ) 10 1 D = 0.50 0.20 0.10 0.1 0.05 τJ 0.02 0.01 0.01 0.001 1E-006 SINGLE PULSE ( THERMAL RESPONSE ) 1E-005 0.0001 R1 R1 τJ τ1 R2 R2 R3 R3 τC τ1 τ2 τ2 Ci= τi/Ri Ci= τi/Ri τ3 τ3 τC Ri (°C/W) τi (sec) 0.244 0.000084 1.102 0.001770 0.655 0.013544 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 t1 , Rectangular Pulse Duration (sec) Fig. 27 - Maximum Transient Thermal Impedance, Junction-to-Case (DIODE- TO-220Pak) 8 2015-11-23 IRGB/IB/P/S4630D/EPbF L L VCC DUT 0 80 V + - DUT 1K VCC Rg Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit diode clamp / DUT L 4X DC VCC -5V DUT / DRIVER DUT VCC Rg RSH Fig.C.T.3 - S.C. SOA Circuit Fig.C.T.4 - Switching Loss Circuit C force R= VCC ICM 100K D1 22K C sense DUT VCC G force DUT 0.0075µF Rg E sense E force Fig.C.T.5 - Resistive Load Circuit 9 Fig.C.T.6 - BVCES Filter Circuit 2015-11-23 IRGB/IB/P/S4630D/EPbF 600 30 600 60 500 25 500 50 tr 90% ICE 400 20 400 300 15 300 40 100 5% ICE 10 5% VCE 0 30 90% test 200 5 100 0 0 20 10% test current 5% VCE -5.20 EON -5 -4.20 -4.70 -100 -0.15 Time (µs) Fig. WF1 - Typ. Turn-off Loss Waveform @ TJ = 175°C using Fig. CT.4 Fig. WF2 - Typ. Turn-on Loss Waveform @ TJ = 175°C using Fig. CT.4 QRR 20 400 200 300 150 10% Peak IRR ICE (A) Peak IRR VCE (V) ICE -20 200 100 100 50 0 -30 -40 -0.05 250 VCE 0 -10 500 tRR 10 IRR (A) -10 0.25 0.05 Time(µs) 30 0.05 0.15 Time (µs) Fig. WF3 - Typ. Diode Recovery Waveform @ TJ = 175°C using Fig. CT.4 10 10 0 EOFF Loss -100 -5.70 ICE (A) 200 VCE (V) tf ICE (A) VCE (V) TEST 0 -100 -5.00 0.00 5.00 -50 10.00 Time (µs) Fig. WF4 - Typ. S.C. Waveform @ TJ = 150°C using Fig. CT.3 2015-11-23 IRGB/IB/P/S4630D/EPbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM B LED O N W W 19, 2000 I N T H E A S S E M B L Y L IN E "C " N o t e : "P " i n a s s e m b l y lin e p o s i t i o n i n d i c a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM B LY LO T C O D E PART NUM BER D ATE C O D E YEA R 0 = 2000 W EEK 19 L IN E C TO-220AB package is not recommended for Surface Mount Application. 11 2015-11-23 IRGB/IB/P/S4630D/EPbF TO-220AB Full– Pak Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Full– Pak Part Marking Information TO-220AB Full-Pak package is not recommended for Surface Mount Application. 12 2015-11-23 IRGB/IB/P/S4630D/EPbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information Notes: This part marking information applies to devices produced after 02/26/2001 EXAMPLE: THIS IS AN IRFPE30 WITH ASSEMBLY LOT CODE 5657 ASSEMBLED ON WW 35, 2001 IN THE ASSEMBLY LINE "H" Note: "P" in assembly line position indicates "Lead-Free" INTERNATIONAL RECTIFIER LOGO PART NUMBER IRFPE30 56 ASSEMBLY LOT CODE 135H 57 DATE CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC package is not recommended for Surface Mount Application. 13 2015-11-23 IRGB/IB/P/S4630D/EPbF TO-247AD Package Outline Dimensions are shown in millimeters (inches) TO-247AD Part Marking Information E X A M P L E : T H IS IS A N IR G P 3 0 B 1 2 0 K D - E W IT H A S S E M B L Y LO T C O D E 5657 ASSEM B LED O N W W 35, 2000 IN T H E A S S E M B L Y L IN E "H " N o te : "P " in a s s e m b ly lin e p o s itio n in d ic a te s "L e a d - F re e " PART N U M BER IN T E R N A T IO N A L R E C T IF IE R LO G O 56 ASSEM B LY LO T C O D E 035H 57 D A TE C O D E YE A R 0 = 2 0 0 0 W EEK 35 L IN E H TO-247AD package is not recommended for Surface Mount Application. 14 2015-11-23 IRGB/IB/P/S4630D/EPbF D2-PAK (TO-263AB) Package Outline Dimensions are shown in millimeters (inches) D2-Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE 15 PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE 2015-11-23 IRGB/IB/P/S4630D/EPbF D2Pak Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 1.65 (.065) 1.60 (.063) 1.50 (.059) 11.60 (.457) 11.40 (.449) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 10.90 (.429) 10.70 (.421) 1.75 (.069) 1.25 (.049) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 16 60.00 (2.362) MIN. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 2015-11-23 IRGB/IB/P/S4630D/EPbF Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level TO-220AB TO-220AB-Full-Pak Moisture Sensitivity Level N/A TO-247AC TO-247AD D2Pak RoHS Compliant MSL1 Yes † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2015 All Rights Reserved. IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office (www.infineon.com). WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies’ products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. 17 2015-11-23