SPD04P10PLG

SPD04P10PL G SIPMOS Power-Transistor ® Product Summary Features • P-Channel • Enhancement mode V DS -100 V R DS(on),max 850 mΩ ID -4.2 A • Logic level • Avalanche rated PG-TO-252-3 • Pb-free lead plating; RoHS compliant ° Qualified according to AEC Q101 Type Package Marking Lead free Packing Tape and reel information SPD04P10PL G PG-TO252-3 04P10PL Yes Non dry 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value Unit steady state Continuous drain current ID T C=25 °C -4.2 T C=100 °C 3.0 -16.8 Pulsed drain current I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=-4.2 A, R GS=25 Ω Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg ESD class T C=25 °C JESD22-A114-HBM 57 mJ ±20 V 38 W -55 ... 175 °C 1A (250 V to 500 V) 260 °C Soldering temperature 55/175/56 IEC climatic category; DIN IEC 68-1 Rev 1.6 A page 1 2012-09-10 SPD04P10PL G Parameter Values Symbol Conditions Unit min. typ. max. - - 3.9 minimal footprint, steady state - - 75 6 cm2 cooling area1), steady state - - 50 -100 - - Thermal characteristics Thermal resistance, junction - soldering point R thJC Thermal resistance, junction - ambient R thJA K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=-250 mA Gate threshold voltage V GS(th) V DS=V GS, I D=-380 µA -1 -1.5 -2 Zero gate voltage drain current I DSS V DS=-100 V, V GS=0 V, T j=25 °C - -0.1 -1 V DS=-100 V, V GS=0 V, T j=150 °C - -10 -100 V µA Gate-source leakage current I GSS V GS=-20 V, V DS=0 V - -10 -100 nA Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=2.75 A - 787 1050 mΩ V GS=-10 V, I D=-3.0 A - 550 850 |V DS|>2|I D|R DS(on)max, I D=-3.0 A 1.5 3.0 - Transconductance g fs S 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev 1.6 page 2 2012-09-10 SPD04P10PL G Parameter Values Symbol Conditions Unit min. typ. max. - 280 372 - 70 94 Dynamic characteristics Input capacitance C iss Output capacitance C oss Reverse transfer capacitance C rss - 34 51 Turn-on delay time t d(on) - 4.6 6.9 Rise time tr - 5.7 8.6 Turn-off delay time t d(off) - 18 27 Fall time tf - 5.0 7.5 Gate to source charge Q gs - 1.1 1.5 Gate to drain charge Q gd - 4.6 6.9 Gate charge total Qg - 12 16 Gate plateau voltage V plateau - 4.1 - V - - -4.2 A - - 16.8 - 0.94 1.2 V - 68 85 ns - 178 223 nC V GS=0 V, V DS=-25 V, f =1 MHz V DD=-50 V, V GS=10 V, I D=-4.2 A, R G=6 Ω pF ns Gate Charge Characteristics 2) V DD=-80 V, I D=-4.2 A, V GS=0 to -10 V nC Reverse Diode Diode continuous forward current IS Diode pulse current I S,pulse Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge 2) Rev 1.6 Q rr T C=25 °C V GS=0 V, I F=-4.2 A, T j=25 °C V R=50 V, I F=|I S|, di F/dt =100 A/µs See figure 16 for gate charge parameter definition page 3 2012-09-10 SPD04P10PL G 1 Power dissipation 2 Drain current P tot=f(T C) I D=f(T C); |V GS|≥10 V 4.5 40 4 35 3.5 30 3 -I D [A] P tot [W] 25 20 15 2.5 2 1.5 10 1 5 0.5 0 0 0 40 80 120 0 160 40 T C [°C] 80 120 160 T C [°C] 3 Safe operating area 4 Max. transient thermal impedance I D=f(V DS); T C=25 °C; D =0 Z thJC=f(t p) parameter: t p parameter: D =t p/T 102 101 1 µs 10 µs 101 Z thJS [K/W] 0.5 -I D [A] 100 µs 100 0.2 1 ms 100 limited by on-state resistance 0.1 10 ms 0.05 DC 0.02 0.01 10 -1 10 100 101 102 103 -V DS [V] Rev 1.6 single pulse -1 10-5 10-4 10-3 10-2 10-1 100 t p [s] page 4 2012-09-10 SPD04P10PL G 5 Typ. output characteristics 6 Typ. drain-source on resistance I D=f(V DS); T j=25 °C R DS(on)=f(I D); T j=25 °C parameter: V GS parameter: V GS 1600 8 -10 V 7 -5 V 1400 -4.5 V -2.8 V 6 1200 -3 V -3.2 V R DS(on) [mΩ] -I D [A] 5 -4 V 4 3 -3.5 V 1000 -4 V -4.5 V 800 -5 V -3.5 V 600 -3.2 V 2 -10 V -3 V 400 -2.8 V 1 200 0 0 2 4 6 8 0 10 2 -V DS [V] 4 6 8 6 8 -I D [A] 7 Typ. transfer characteristics 8 Typ. forward transconductance I D=f(V GS); |V DS|>2|I D|R DS(on)max g fs=f(I D); T j=25 °C parameter: T j 8 5 7 4 6 25 °C 3 g fs [S] -I D [A] 5 4 125 °C 3 2 2 1 1 0 0 0 2 4 6 8 -V GS [V] Rev 1.6 0 2 4 -I D [A] page 5 2012-09-10 SPD04P10PL G 9 Drain-source on-state resistance 10 Typ. gate threshold voltage R DS(on)=f(T j); I D=-3 A; V GS=-10 V V GS(th)=f(T j); V GS=V DS; I D=-380 µA 2500 3 2000 max. 1500 -V GS(th) [V] R DS(on) [mΩ] 2 98 % 1000 typ. 1 min. 500 typ. 0 0 -60 -20 20 60 100 140 180 -60 -20 20 60 T j [°C] 100 140 180 T j [°C] 11 Typ. capacitances 12 Forward characteristics of reverse diode C =f(V DS); V GS=0 V; f =1 MHz I F=f(V SD) parameter: T j 103 102 25 °C, typ 101 Ciss 175 °C, 98% 102 I F [A] C [pF] 175 °C, typ Coss 100 Crss 25 °C, 98% 10-1 101 10-2 0 5 10 15 20 25 -V DS [V] Rev 1.6 0 0.5 1 1.5 -V SD [V] page 6 2012-09-10 SPD04P10PL G 13 Avalanche characteristics 14 Typ. gate charge I AS=f(t AV); R GS=25 Ω V GS=f(Q gate); I D=-4.2 A pulsed parameter: T j(start) parameter: V DD 10 10 9 8 50 V 20 V 80 V 7 100 °C 25 °C 6 - VGS [V] -I AV [A] 125 °C 1 5 4 3 2 1 0.1 0 1 10 100 1000 0 5 10 15 - Qgate [nC] t AV [µs] 15 Drain-source breakdown voltage 16 Gate charge waveforms V BR(DSS)=f(T j); I D=-250 µA 130 V GS Qg 120 -V BR(DSS) [V] 110 100 V g s(th) 90 80 Q g(th) Q sw Q gs 70 -60 -20 20 60 100 140 Q g ate Q gd 180 T j [°C] Rev 1.6 page 7 2012-09-10 SPD04P10PL G Package Outline: PG-TO-252-3 • Logic level Rev 1.6 page 8 2012-09-10 SPD04P10PL G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.6 page 9 2012-09-10