SPD04P10P

SPD04P10P G SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Normal level • Avalanche rated • Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max ID -100 1 -4 V Ω A PG-TO252-3 Type SPD04P10P G Package PG-TO252-3 Marking 04P10P Lead free Yes Packing Non dry Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg JESD22-A114-HBM T C=25 °C V GS=-10 V, I D=-2.8 A I D=-4 A, R GS=25 Ω Value -4 -2.8 -16 57 ±20 38 -55 ... 175 1A (250 V to 500 V) 260 °C 55/175/56 mJ V W °C Unit A Rev 1.5 page 1 2009-02-16 SPD04P10P G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - soldering point Thermal resistance, junction - ambient R thJC minimal footprint, steady state 6 cm2 cooling area1), steady state Values typ. max. Unit - - 3.9 K/W R thJA - - 75 - - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-380 µA V DS=-100 V, V GS=0 V, T j=25 °C V DS=-100 V, V GS=0 V, T j=150 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=-20 V, V DS=0 V V GS=-10 V, I D=-2.8 A |V DS|>2|I D|R DS(on)max, I D=-2.8 A -100 -2.1 -3.0 -4 V Zero gate voltage drain current I DSS - -0.1 -1 µA - -10 -10 644 -100 -100 1000 nA mΩ Transconductance g fs 1.2 2.4 - S 1) 2 Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev 1.5 page 2 2009-02-16 SPD04P10P G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Q gs Q gd Qg V plateau V DD=-80 V, I D=-4 A, V GS=0 to -10 V 1.4 5 9 6 1.8 7 12 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-50 V, V GS=10 V, I D=-4 A, R G=6 Ω V GS=0 V, V DS=-25 V, f =1 MHz 240 62 28 5.7 8.6 14 4.5 319 82 42 8.6 13 21 6.8 ns pF Values typ. max. Unit Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr V R=50 V, I F=|I S|, di F/dt =100 A/µs T C=25 °C V GS=0 V, I F=-4 A, T j=25 °C -0.8 74 218 -4.0 16.0 -1.2 93 273 V ns nC A 2) See figure 16 for gate charge parameter definition Rev 1.5 page 3 2009-02-16 SPD04P10P G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); |V GS|≥10 V 40 35 4 30 3 25 P tot [W] 20 -I D [A] 0 40 80 120 160 2 15 10 1 5 0 0 0 40 80 120 160 T C [°C] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 1 µs 101 10 µs 0.5 Z thJS [K/W] 100 µs -I D [A] 100 0.2 1 ms 0.1 0.05 10 0 limited by on-state resistance 10 ms DC 0.02 0.01 single pulse 10 -1 10 100 101 102 103 -1 10-5 10-4 10-3 10-2 10-1 100 -V DS [V] t p [s] Rev 1.5 page 4 2009-02-16 SPD04P10P G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 8 -20 V -10 V -4.5 V -8 V -7 V 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 1600 7 1400 -5 V 6 1200 -6 V R DS(on) [mΩ ] 5 -I D [A] -6 V 4 1000 -7 V 3 -5 V 800 -8 V -10 V -20 V 2 -4.5 V -4 V 600 1 0 0 2 4 6 8 10 400 0 2 4 6 8 -V DS [V] -I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 8 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 7 4 6 3 5 -I D [A] 4 25 °C g fs [S] 7 2 3 2 125 °C 1 1 0 1 3 5 0 0 2 4 6 8 -V GS [V] -I D [A] Rev 1.5 page 5 2009-02-16 SPD04P10P G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=-4 A; V GS=-10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS; I D=-380 µA 2500 5 2000 4 max. R DS(on) [mΩ ] -V GS(th) [V] 1500 98 % 3 typ. 1000 typ. 2 min. 500 1 0 -60 -20 20 60 100 140 180 0 -60 -20 20 60 100 140 180 T j [°C] T j [°C] 11 Typ. capacitances C =f(V DS); V GS=0 V; f =1 MHz 12 Forward characteristics of reverse diode I F=f(V SD) parameter: T j 103 102 25 °C, typ 10 Ciss 1 175 °C, 98% 175 °C, typ C [pF] 102 Coss I F [A] 100 Crss 10-1 25 °C, 98% 101 0 5 10 15 20 25 10-2 0 0.5 1 1.5 -V DS [V] -V SD [V] Rev 1.5 page 6 2009-02-16 SPD04P10P G 13 Avalanche characteristics I AS=f(t AV); R GS=25 Ω parameter: T j(start) 10 14 Typ. gate charge V GS=f(Q gate); I D=-4 A pulsed parameter: V DD 10 50 V 20 V 80 V 8 25 °C 100 °C 125 °C 6 1 - VGS [V] 4 2 0 1 10 100 1000 -I AV [A] 0.1 0 2 4 6 8 10 t AV [µs] - Qgate [nC] 15 Drain-source breakdown voltage V BR(DSS)=f(T j); I D=-250 µA 16 Gate charge waveforms 120 V GS 115 Qg 110 -V BR(DSS) [V] 105 V g s(th) 100 95 Q g(th) Q sw Q g ate 90 -60 -20 20 60 100 140 180 Q gs Q gd T j [°C] Rev 1.5 page 7 2009-02-16 SPD04P10P G Package Outline: PG-TO-252-3 V GS=-10 V, I D=-2.8 A Rev 1.5 page 8 2009-02-16 SPD04P10P G Published by Infineon Technologies AG 81726 Munich, Germany © 2008 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon . Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev 1.5 page 9 2009-02-16