2N5087

2N5086/2N5087/MMBT5087 2N5086/2N5087/MMBT5087 PNP General Purpose Amplifier • This device is designed for low level, high gain, low noise general purpose amplifier applications at collector currents to 50mA. 1 1. Emitter 2. Base 3. Collector TO-92 3 2 SOT-23 1 Mark: 2Q 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25°C unless otherwise noted Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current Junction and Storage Temperature - Continuous Value -50 -50 -3.0 -100 -55 ~ +150 Units V V V mA °C * These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1. These ratings are based on a maximum junction temperature of 150 degrees C. 2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Electrical Characteristics Ta=25°C unless otherwise noted Symbol Parameter Test Condition IC = -1.0mA, IB = 0 IC = -100µA, IE = 0 VCB = -10V, IE = 0 VCB = -35V, IE = 0 VEB = -3.0V, IC = 0 IC = -100µA, VCE = -5.0V IC = -1.0mA, VCE = -5.0V IC = -10mA, VCE = -5.0V VCE(sat) VBE(on) fT Ccb hfe NF Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product Collector-Base Capacitance Small-Signal Current Gain Noise Figure IC = -10mA, IB = -1.0mA IC = -1.0mA, VCE = -5.0V IC = -500µA, VCE = -5.0V, f = 20MHz VCB = -5.0V, IE = 0, f = 100KHz IC = -1.0mA, VCE = -5.0V, f = 1.0KHz IC = -100µA, VCE = -5.0V RS = 3.0kΩ, f = 1.0KHz IC = -20µA, VCE = -5.0V RS = 10kΩ f = 10Hz to 15.7KHz * Pulse Test: Pulse Width ≤ 300µs, Duty Cycle ≤ 2.0% Min. -50 -50 Max. Units V V Off Characteristics Collector-Emitter Breakdown Voltage * V(BR)CEO V(BR)CBO ICEO ICBO hFE Collector-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain -10 -50 -50 5086 5087 5086 5087 5086 5087 150 250 150 250 150 250 500 800 nA nA nA On Characteristics -0.3 -0.85 40 4.0 5086 5087 5086 5087 5086 5087 150 250 600 900 3.0 2.0 3.0 2.0 V V MHz pF Small Signal Characteristics dB dB dB dB ©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003 2N5086/2N5087/MMBT5087 Thermal Characteristics Ta=25°C unless otherwise noted Max. Symbol PD RθJC RθJA Parameter Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N5086 2N5087 625 5.0 83.3 200 357 *MMBT5087 350 2.8 Units mW mW/°C °C/W °C/W * Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06." ©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003 2N5086/2N5087/MMBT5087 Typical Characteristics VCESAT - COLLECTOR EMITTER VOLTAGE (V) h F E- TYPICAL PULSED CURRENT GAIN β 0.3 0.25 0.2 0.15 350 V CB = 5V β β β 300 250 200 150 100 125 °C β β = 10 25 °C 25 °C 0.1 0.05 0 0.1 125 °C - 40 °C - 40 °C 50 0.01 0.03 0.1 0.3 1 3 10 30 I C - COLLECTOR CURRENT (mA) 100 1 10 I C - COLLECTOR CURRENT (mA) Figure 1. Typical Pulsed Current Gain vs Collector Current Figure 2. Collector-Emitter Saturation Voltage vs Collector Current 1 0.8 - 40 °C V BEON - BAS E EMITTER ON VOLTAGE (V) V BESAT - BASE EMITTE R VOLTAGE (V) 1 0.8 - 40 °C 25 °C 125 °C 0.6 0.4 0.2 0 0.1 25 °C 125 °C 0.6 0.4 0.2 0 0.1 β ββ β β = 10 β V CE = 5V 1 10 I C - COLLECTOR CURRENT (mA) 50 1 10 I C - COLLECTOR CURRE NT (mA) 25 Figure 3. Base-Emitter Saturation Voltage vs Collector Current Figure 4. Base-Emitter On Voltage vs Collector Current I CBO - COLLECTOR CURRENT (nA) 100 V CB = 40V 20 f = 1 MHz CAPACITANCE (pF) 16 12 8 C ibo 10 1 0.1 4 0 C obo 0.01 25 50 75 100 TA - AMBIENT TEMP ERATURE (° C) 125 0 4 8 12 16 REVERSE BIAS VOLTAGE (V) 20 Figure 5. Collector Cutoff Current vs Ambient Temperature Figure 6. Input and Output Capacitance vs Reverse Voltag ©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003 2N5086/2N5087/MMBT5087 Typical Characteristics(Continuce) - GAIN BANDWIDTH PRODUCT (MHz) 5 350 NF - NOISE FIGURE (dB) V CE = 5V 300 250 200 150 100 50 0 0.1 V CE = 5V 4 3 2 µ µµ µ µ I C = - 250 µA, R S = 5.0 kΩΩΩ µ µµ µ µ I C = - 500 µA, R S = 1.0 kΩΩΩ Ω ΩΩ Ω ΩΩ 1 µ µµ µ µ ΩΩ I C = - 20 µA, R S = 10 kΩ Ω Ω Ω 1000 10000 f - FREQUENCY (Hz) 1000000 1 10 I C - COLLECTOR CURRENT (mA) 100 0 100 f T Figure 7. Gain Bandwidth Product vs Collector Current Figure 8. Noise Figure vs Frequency 8 V CE = 5V P D - POWER DISSIPATION (mW) 625 BANDWIDTH = 15.7 kHz NF - NOISE FIGURE (dB) TO-92 500 375 250 125 0 6 I C = 10µµA µµ µ µ 4 µ I C = 100 µA µµ µ SOT-23 2 µ 0 1,000 2,000 5,000 10,000 R S - SOURCE RESISTANCE ( Ω ) ΩΩ Ω 20,000 Ω 50,000 100,000 0 25 50 75 100 TEMPERATURE ( o C) 125 150 Ω Figure 9. Wideband Noise Frequency vs Source Resistance √√ √ √√ √ n - EQUIVALENT INPUT NOISE CURRENT (pA/ Hz) µ√√ µ - EQUIVALENT INPUT NOISE VOLTAGE ( µV/ √Hz) µµ √√ µ√ Figure 10. Power Dissipation vs Ambient Temperature 10 5 2 1 0.5 0.2 0.1 0.001 0.01 0.1 I C - COLLECTOR CURRENT (mA) 1 V CE = - 5.0V ,f= 1 00 Hz 0.1 V CE = - 5.0V 0.05 0.02 0.01 in z kH 1.0 z in kH 10 ,f= in ,f= e n , f = 100 Hz 0.005 e n , f = 1.0 kHz e n , f = 10 kHz 0.002 0.001 0.001 2 n 2 0.01 0.1 I C - COLLECTOR CURRENT (mA) √i √e 1 Figure 11. Equivalent Input Noise Current vs Collector Current Figure 12. Equivalent Input Noise Voltage vs Collector Current ©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003 2N5086/2N5087/MMBT5087 Typical Characteristics 1,000,000 (Continuce) R S - SOURCE RESISTANCE ΩΩ ) ( Ω R S - SOURCE RESISTANCE ( Ω ) 1,000,000 100,000 1.0 dB 10,000 10 dB 6.0 dB 4.0 dB 2.0 dB 100,000 12 dB 8.0 dB 5.0 dB 3.0 dB 5.0 dB 8.0 dB 12 dB V CE = - 5V f = 100 Hz BANDWIDTH = 15 Hz Ω Ω 4.0 dB 6.0 dB 10 dB V CE = - 5V f = 10 kHz BANDWIDTH = 1.5 kHz Ω Ω 10,000 1,000 100 1,000 100 0.001 0.01 0.1 I C - COLLECTOR CURRENT (mA) 1 0.001 0.01 0.1 I C - COLLECTOR CURRENT (mA) 1 Figure 13. Contours of Constanct Narrow Band Noise Figure Figure 14. Contours of Constanct Narrow Band Noise Figure R S - SOURCE RESISTANCE ( Ω ) Ω Ω 10 6.0 dB 100,000 dB 4.0 dB V CE = - 5V f = 1.0 kHz BANDWIDTH = 150 Hz Ω R S - SOURCE RESISTANCE ( Ω ) 1,000,000 10,000 Ω 0 6. dB 0 4. 5,000 dB 0 2. dB 2,000 1,000 500 4. 0 6.0 dB 10,000 4.0 dB dB 6.0 dB dB 1,000 10 V CE = - 5V f = 10 MHz 200 BANDWIDTH = - 2 kHz 100 100 0.001 0.01 0.1 I C - COLLECTOR CURRENT (mA) 1 0.01 0.1 1 I C - COLLECTOR CURRENT (mA) 10 Figure 15. BContours of Constant Narrow Band Noise Figure Figure 16. Contours of Constant Narrow Band Noisd Figure ©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003 2N5086/2N5087/MMBT5087 Typical Common Emitter Characteristics HARACTERIS TICS REL. TO VALUE, VCE=-5.0V HARACTERISTICS REL. TO VALUE , I C =1.0mA (f = 1.0KHz) 1.6 1.4 1.2 1 h oe 0.8 f = 1 .0 kHz 0.6 I C = 1 .0 mA TA = -25°C 0.4 0 -5 -10 -15 -20 V CE- COLLECTOR-EMITTE R VOLTAGE (V) -25 h fe a nd h ie 100 h oe 10 h fe 1 0.1 f = 1 .0 kHz VCE = -5.0V TA = -25°C h ie 0.01 0.1 0.2 0.5 1 2 5 I C - COLLECTOR CURRE NT (mA) 10 Typical Common Emitter Characteristics Typical Common Emitter Characteristics CHARACTERIS TICS REL. TO VALUE, TA= 25°C 2 1.8 1.6 1.4 1.2 1 0.8 0.6 VCE = -5.0V I C = 1.0 mA f = 1 .0 kHz h ie h fe h fe a nd h oe h oe h ie -40 -20 0 20 40 60 80 T A - AMBIE NT TEMP ERATURE ( ° C) 100 0.4 -60 Typical Common Emitter Characteristics ©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003 2N5086/2N5087/MMBT5087 Package Dimensions TO-92 4.58 –0.15 +0.25 0.46 14.47 ±0.40 ±0.10 4.58 ±0.20 1.27TYP [1.27 ±0.20] 3.60 ±0.20 1.27TYP [1.27 ±0.20] 0.38 –0.05 +0.10 3.86MAX 1.02 ±0.10 0.38 –0.05 +0.10 (R2.29) (0.25) Dimensions in Millimeters ©2002 Fairchild Semiconductor Corporation Rev. B1, September 2003 2N5086/2N5087/MMBT5087 Package Dimensions (Continued) SOT-23 0.20 MIN 2.40 ±0.10 0.40 ±0.03 1.30 ±0.10 0.45~0.60 0.03~0.10 0.38 REF 0.40 ±0.03 0.96~1.14 2.90 ±0.10 0.12 –0.023 +0.05 0.95 ±0.03 0.95 ±0.03 1.90 ±0.03 0.508REF 0.97REF Dimensions in Millimeters ©2003 Fairchild Semiconductor Corporation Rev. B1, September 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST® FASTr™ Bottomless™ FRFET™ CoolFET™ CROSSVOLT™ GlobalOptoisolator™ GTO™ DOME™ HiSeC™ EcoSPARK™ I2C™ E2CMOS™ EnSigna™ ImpliedDisconnect™ FACT™ ISOPLANAR™ Across the board. Around the world.™ The Power Franchise™ Programmable Active Droop™ DISCLAIMER LittleFET™ MICROCOUPLER™ MicroFET™ MicroPak™ MICROWIRE™ MSX™ MSXPro™ OCX™ OCXPro™ OPTOLOGIC® OPTOPLANAR™ PACMAN™ POP™ Power247™ PowerTrench® QFET® QS™ QT Optoelectronics™ Quiet Series™ RapidConfigure™ RapidConnect™ SILENT SWITCHER® SMART START™ SPM™ Stealth™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic® TINYOPTO™ TruTranslation™ UHC™ UltraFET® VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems 2. A critical component is any component of a life support which, (a) are intended for surgical implant into the body, device or system whose failure to perform can be or (b) support or sustain life, or (c) whose failure to perform reasonably expected to cause the failure of the life support when properly used in accordance with instructions for use device or system, or to affect its safety or effectiveness. provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production ©2003 Fairchild Semiconductor Corporation Rev. I5