2N5087G

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Other names and brands may be claimed as the property of others. 2N5087 Amplifier Transistor PNP Silicon Features • These are Pb−Free Devices* http://onsemi.com 3 COLLECTOR MAXIMUM RATINGS Rating Symbol Value Unit Collector−Emitter Voltage VCEO 50 Vdc Collector−Base Voltage VCBO 50 Vdc Emitter−Base Voltage VEBO 3.0 Vdc Collector Current − Continuous IC 50 mAdc Total Device Dissipation @ TA = 25°C Derate above 25°C PD 625 5.0 mW mW/°C Total Device Dissipation @ TC = 25°C Derate above 25°C PD 1.5 12 W mW/°C TJ, Tstg −55 to +150 °C Symbol Max Unit Thermal Resistance, Junction−to−Ambient RqJA 200 °C/W Thermal Resistance, Junction−to−Case RqJC 83.3 °C/W Operating and Storage Junction Temperature Range 2 BASE 1 EMITTER TO−92 CASE 29 STYLE 1 1 12 3 STRAIGHT LEAD BULK PACK THERMAL CHARACTERISTICS Characteristic 2 3 BENT LEAD TAPE & REEL AMMO PACK MARKING DIAGRAM 2N 5087 AYWW G G Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. A = Assembly Location Y = Year WW = Work Week G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† 2N5087G TO−92 (Pb−Free) 5000 Units / Bulk 2N5087RLRAG TO−92 (Pb−Free) 2000/Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2013 April, 2013 − Rev. 5 1 Publication Order Number: 2N5087/D 2N5087 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Max 50 − 50 − − 50 − 50 250 250 250 800 − − − 0.3 − 0.85 40 − − 4.0 250 900 − − 2.0 2.0 Unit OFF CHARACTERISTICS Collector−Emitter Breakdown Voltage (Note 1) (IC = 1.0 mAdc, IB = 0) Collector−Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) V(BR)CEO V(BR)CBO ICBO IEBO Vdc Vdc nAdc nAdc ON CHARACTERISTICS DC Current Gain (IC = 100 mAdc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (Note 1) Collector−Emitter Saturation Voltage Base−Emitter On Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE VCE(sat) VBE(on) − Vdc Vdc SMALL−SIGNAL CHARACTERISTICS Current−Gain − Bandwidth Product Collector−Base Capacitance Small−Signal Current Gain Noise Figure (IC = 500 mAdc, VCE = 5.0 Vdc, f = 20 MHz) (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) (IC = 20 mAdc, VCE = 5.0 Vdc, RS = 10 kW, f = 10 Hz/15.7 kHz) (IC = 100 mAdc, VCE = 5.0 Vdc, RS = 3.0 kW, f = 1.0 kHz) 1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. http://onsemi.com 2 fT Ccb hfe NF MHz pF − dB 2N5087 TYPICAL NOISE CHARACTERISTICS (VCE = −  5.0 Vdc, TA = 25°C) 10 7.0 IC = 10 mA 5.0 In, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 1.0 7.0 5.0 BANDWIDTH = 1.0 Hz RS ≈ 0 30 mA 3.0 100 mA 300 mA 1.0 mA 2.0 BANDWIDTH = 1.0 Hz RS ≈ ∞ IC = 1.0 mA 3.0 2.0 300 mA 1.0 0.7 0.5 100 mA 30 mA 0.3 0.2 1.0 10 mA 0.1 10 20 50 100 200 500 1.0k f, FREQUENCY (Hz) 2.0k 5.0k 10k 10 20 50 1.0M 500k BANDWIDTH = 1.0 Hz 200k 100k 50k 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 2.0 dB 3.0 dB 200 100 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 1.0M 500k BANDWIDTH = 1.0 Hz 20k 10k 0.5 dB 5.0k 1.0 dB 2.0k 1.0k 500 2.0 dB 3.0 dB 500 700 1.0k 5.0 dB 10 20 RS , SOURCE RESISTANCE (OHMS) Figure 3. Narrow Band, 100 Hz 1.0M 500k 10k 200k 100k 50k 200 100 5.0 dB 10 5.0k Figure 2. Noise Current RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) Figure 1. Noise Voltage 100 200 500 1.0k 2.0k f, FREQUENCY (Hz) 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 700 1.0k Figure 4. Narrow Band, 1.0 kHz 10 Hz to 15.7 kHz 200k 100k 50k Noise Figure is Defined as: NF + 20 log10 20k 10k 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 100 10 20 30 50 70 100 200 300 ƫ en2 ) 4KTRS ) In 2RS2 1ń2 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman’s Constant (1.38 x 10−23 j/°K) T = Temperature of the Source Resistance (°K) RS = Source Resistance (Ohms) 5.0k 2.0k 1.0k 500 ƪ 500 700 1.0k IC, COLLECTOR CURRENT (mA) Figure 5. Wideband http://onsemi.com 3 2N5087 TYPICAL STATIC CHARACTERISTICS h FE , DC CURRENT GAIN 400 TJ = 125°C 25°C 200 -55°C 100 80 60 VCE = 1.0 V VCE = 10 V 40 0.003 0.005 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 1.0 100 TA = 25°C IC, COLLECTOR CURRENT (mA) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 6. DC Current Gain 0.8 IC = 1.0 mA 0.6 10 mA 50 mA 100 mA 0.4 0.2 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) TA = 25°C PULSE WIDTH = 300 ms 80 DUTY CYCLE ≤ 2.0% 300 mA 200 mA 150 mA 40 100 mA 20 50 mA 0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) θV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.2 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 40 Figure 8. Collector Characteristics 1.4 0.2 250 mA 60 Figure 7. Collector Saturation Region 0.1 IB = 400 mA 350 mA 50 1.6 *APPLIES for IC/IB ≤ hFE/2 0.8 *qVC for VCE(sat) - 55°C to 25°C 0.8 25°C to 125°C 1.6 2.4 0.1 100 25°C to 125°C 0 Figure 9. “On” Voltages qVB for VBE 0.2 - 55°C to 25°C 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 10. Temperature Coefficients http://onsemi.com 4 50 100 2N5087 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 200 100 70 50 30 tr 20 10 7.0 5.0 1.0 100 70 50 tf 30 td @ VBE(off) = 0.5 V 20 2.0 3.0 5.0 7.0 10 20 30 IC, COLLECTOR CURRENT (mA) 50 70 10 -1.0 100 -  2.0 -  3.0 -  5.0 -  7.0 -10 -  20 -  30 IC, COLLECTOR CURRENT (mA) -  50 -  70 -100 Figure 12. Turn−Off Time 500 10 TJ = 25°C TJ = 25°C 7.0 VCE = 20 V 300 Cib C, CAPACITANCE (pF) f, T CURRENT-GAIN — BANDWIDTH PRODUCT (MHz) Figure 11. Turn−On Time 5.0 V 200 100 5.0 3.0 2.0 Cob 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 1.0 0.05 50 0.1 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current−Gain — Bandwidth Product Figure 14. Capacitance 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 hoe , OUTPUT ADMITTANCE (m mhos) VCE = -10 Vdc f = 1.0 kHz TA = 25°C 10 0.2 0.1 10 20 50 200 20 hie , INPUT IMPEDANCE (kΩ ) VCC = -  3.0 V IC/IB = 10 IB1 = IB2 TJ = 25°C ts 300 t, TIME (ns) t, TIME (ns) 1000 700 500 VCC = 3.0 V IC/IB = 10 TJ = 25°C 100 70 50 VCE = 10 Vdc f = 1.0 kHz TA = 25°C 30 20 10 7.0 5.0 3.0 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 2.0 0.1 100 Figure 15. Input Impedance 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) Figure 16. Output Admittance http://onsemi.com 5 50 100 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 2N5087 1.0 0.7 0.5 D = 0.5 0.3 0.2 0.2 0.1 0.1 0.07 0.05 FIGURE 19 0.05 P(pk) 0.02 0.03 0.02 t1 0.01 0.01 0.01 0.02 SINGLE PULSE 0.05 0.1 0.2 0.5 1.0 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN569) ZqJA(t) = r(t) w RqJA TJ(pk) - TA = P(pk) ZqJA(t) 500 1.0k 2.0k 5.0k 10k 20k 50k 100k Figure 17. Thermal Response IC, COLLECTOR CURRENT (mA) 400 200 100 ms 100 TC = 25°C dc 60 1.0 s TA = 25°C 40 dc 20 TJ = 150°C 10 CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 6.0 4.0 The safe operating area curves indicate IC−VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150°C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 10 ms 1.0 ms 2.0 DESIGN NOTE: USE OF THERMAL RESPONSE DATA 40 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZqJA(t), multiply the value obtained from Figure 17 by the steady state value RqJA. Example: The 2N5087 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore DT = r(t) x P(pk) x RqJA = 0.22 x 2.0 x 200 = 88°C. For more information, see ON Semiconductor Application Note AN569/D, available from the Literature Distribution Center or on our website at www.onsemi.com. Figure 18. Active−Region Safe Operating Area 104 IC, COLLECTOR CURRENT (nA) VCC = 30 V 103 ICEO 102 101 ICBO AND ICEX @ VBE(off) = 3.0 V 100 10-1 10-2 - 40 - 20 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (°C) Figure 19. Typical Collector Leakage Current http://onsemi.com 6 2N5087 PACKAGE DIMENSIONS TO−92 (TO−226) CASE 29−11 ISSUE AM A B STRAIGHT LEAD BULK PACK R P L SEATING PLANE K D X X G J H V C SECTION X−X N 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.021 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --0.250 --0.080 0.105 --0.100 0.115 --0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.407 0.533 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --6.35 --2.04 2.66 --2.54 2.93 --3.43 --- N A R BENT LEAD TAPE & REEL AMMO PACK B P T SEATING PLANE G K D X X J V 1 C N SECTION X−X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. DIM A B C D G J K N P R V MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.40 0.54 2.40 2.80 0.39 0.50 12.70 --2.04 2.66 1.50 4.00 2.93 --3.43 --STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf . SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. 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