2N7052

2N7052 / 2N7053 / NZT7053 Discrete POWER & Signal Technologies 2N7052 2N7053 NZT7053 C E C B TO-92 E C B E C TO-226 B SOT-223 NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous TA = 25°C unless otherwise noted Parameter Value 100 100 12 1.5 -55 to +150 Units V V V A °C Operating and Storage Junction Temperature Range *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD RθJC RθJA TA = 25°C unless otherwise noted Characteristic Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient 2N7052 625 5.0 83.3 200 Max 2N7053 1,000 8.0 125 50 *NZT7053 1,000 8.0 125 Units mW mW/°C °C/W °C/W *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. ã 1997 Fairchild Semiconductor Corporation 2N7052 / 2N7053 / NZT7053 NPN Darlington Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO V(BR)CBO V(BR)EBO ICBO ICES IEBO Collector-Emitter Breakdown Voltage* Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector-Cutoff Current Collector-Cutoff Current Emitter-Cutoff Current IC = 1.0 mA, IB = 0 IC = 100 µ A, IE = 0 IE = 1.0 mA, IC = 0 VCB = 80 V, IE = 0 VCE = 80 V, IE = 0 VEB = 7.0 V, IC = 0 100 100 12 0.1 0.2 0.1 V V V µA µA µA ON CHARACTERISTICS* hFE VCE(sat) VBE(on) DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter On Voltage IC = 100 mA, VCE = 5.0 V IC = 1.0 A, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA IC = 100 mA, VBE = 5.0 V 10,000 1,000 20,000 1.5 2.0 V V SMALL SIGNAL CHARACTERISTICS FT Ccb Transition Frequency Collector-Base Capacitance IC = 100 mA, VCE = 5.0 V, VCB = 10 V,f = 1.0 MHz 2N7052 2N7053 200 10 8.0 MHz pF *Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0% Typical Characteristics 100 80 60 40 20 0 0.001 125 °C V - COLLECTOR EMITTER VOLTAGE (V) CESAT h FE - TYPICAL PULSED CURRENT GAIN (K) Typical Pulsed Current Gain vs Collector Current Collector-Emitter Saturation Voltage vs Collector Current 2 β = 1000 1.6 1.2 - 40°C 25 °C - 40°C 0.8 0.4 0 10 25 °C 125 °C 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 100 I C - COLLECTOR CURRENT (mA) P 06 1000 2N7052 / 2N7053 / NZT7053 NPN Darlington Transistor (continued) Typical Characteristics (continued) VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Base-Emitter Saturation Voltage vs Collector Current 2 β = 1000 - 40°C 25 °C 125 °C Base Emitter ON Voltage vs Collector Current 2 1.6 1.2 0.8 0.4 0 10 - 40°C 25 °C 125 °C 1.6 1.2 0.8 0.4 0 10 VCE= 5V 100 I C - COLLECTOR CURRENT (mA) 1000 100 I C - COLLECTOR CURRENT (mA) P 06 1000 Collector-Cutoff Current vs. Ambient Temperature ICBO- COLLECTOR CURRENT (nA) VCB = 80V 10 Junction Capacitance vs Reverse Bias Voltage JUNCTION CAPACITANCE (pF) 100 100 1 10 C ib 0.1 C cb 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( º C) P 06 125 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) 100 Typical Collector-Emitter Leakage Current vs Temperature I CES - LEAKAGE CURRENT (nA) 1000 PD - POWER DISSIPATION (W) 1 Power Dissipation vs Ambient Temperature VCE = 80V V BE = 0 100 SOT-223 0.75 TO-92 TO-226 10 0 .5 1 0.25 0.1 0 40 80 120 160 TJ - JUNCTION TEMPERATURE ( º C) 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION LOT: CBVK741B019 HTB:B QTY: 10000 See Fig 2.0 for various Reeling Styles NSID: PN2222N SPEC: D/C1: D9842 SPEC REV: QA REV: B2 FSCINT Label (FSCINT) 5 Reels per Intermediate Box F63TNR Label Customized Label 375mm x 267mm x 375mm Intermediate Box F63TNR Label sample LOT: CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: QTY1: QTY2: QTY: 2000 SPEC: SPEC REV: CPN: N/F: F Customized Label (F63TNR)3 TO-92 TNR/AMMO PACKING INFROMATION Packing Reel Style A E Ammo M P Quantity 2,000 2,000 2,000 2,000 EOL code D26Z D27Z D74Z D75Z AMMO PACK OPTION See Fig 3.0 for 2 Ammo Pack Options Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units FSCINT Label 327mm x 158mm x 135mm Immediate Box Customized Label 5 Ammo boxes per Intermediate Box F63TNR Label 333mm x 231mm x 183mm Intermediate Box Customized Label (TO-92) BULK PACKING INFORMATION EOL CODE J18Z J05Z NO EOL CODE DESCRIPTION TO-18 OPTION STD TO-5 OPTION STD TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 LEADCLIP DIMENSION NO LEAD CLIP NO LEAD CLIP NO LEADCLIP QUANTITY 2.0 K / BOX 1.5 K / BOX 2.0 K / BOX BULK OPTION See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label L34Z NO LEADCLIP 2.0 K / BOX 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option ©2001 Fairchild Semiconductor Corporation March 2001, Rev. B1 TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Machine Option “E” (J) Style “A”, D26Z, D70Z (s/h) Style “E”, D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D74Z (M) ORDER STYLE D75Z (P) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0 Hd P Pd b Ha H1 HO d L L1 W1 S WO W2 W t t1 P1 F1 P2 DO ITEM DESCRIPTION PO Base of Package to Lead Bend Component Height Lead Clinch Height Component Base Height Component Alignment ( side/side ) Component Alignment ( front/back ) Component Pitch Feed Hole Pitch Hole Center to First Lead Hole Center to Component Center Lead Spread Lead Thickness Cut Lead Length Taped Lead Length Taped Lead Thickness Carrier Tape Thickness SYMBOL b Ha HO H1 Pd Hd P PO P1 P2 F1/F2 d L L1 t t1 W WO W1 W2 DO S DIMENSION 0.098 (max) 0.928 (+/- 0.025) 0.630 (+/- 0.020) 0.748 (+/- 0.020) 0.040 (max) 0.031 (max) 0.500 (+/- 0.020) 0.500 (+/- 0.008) 0.150 (+0.009, -0.010) 0.247 (+/- 0.007) 0.104 (+/- 0 .010) 0.018 (+0.002, -0.003) 0.429 (max) 0.209 (+0.051, -0.052) 0.032 (+/- 0.006) 0.021 (+/- 0.006) 0.708 (+0.020, -0.019) 0.236 (+/- 0.012) 0.035 (max) 0.360 (+/- 0.025) 0.157 (+0.008, -0.007) 0.004 (max) User Direction of Feed TO-92 Reel Configuration: Figure 5.0 Carrier Tape Width Hold - down Tape Width Hold - down Tape position Feed Hole Position Sprocket Hole Diameter Lead Spring Out Note : All dimensions are in inches. ELECT ROSTATIC SEN SITIVE D EVICES D4 D1 ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM F63TNR Label Customized Label D2 Reel Diameter Arbor Hole Diameter (Standard) (Small Hole) Core Diameter Hub Recess Inner Diameter Hub Recess Depth Flange to Flange Inner Width W1 Hub to Hub Center Width W3 Note: All dimensions are inches D1 D2 D2 D3 D4 W1 W2 W3 13.975 1.160 0.650 3.100 2.700 0.370 1.630 14.025 1.200 0.700 3.300 3.100 0.570 1.690 2.090 W2 D3 July 1999, Rev. A TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 ©2000 Fairchild Semiconductor International January 2000, Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  DISCLAIMER FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G