2N7052

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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 2N7053 2N7052 NZT7053 C E C B C TO-92 C E B TO-226 B SOT-223 E NPN Darlington Transistor This device is designed for applications requiring extremely high gain at collector currents to 1.0 A and high breakdown voltage. Sourced from Process 06. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter Value Units VCEO Collector-Emitter Voltage 100 V VCBO Collector-Base Voltage 100 V VEBO Emitter-Base Voltage 12 V IC Collector Current - Continuous 1.5 A TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics Symbol PD TA = 25°C unless otherwise noted Characteristic RθJC Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case RθJA Thermal Resistance, Junction to Ambient Max 2N7052 625 5.0 83.3 2N7053 1,000 8.0 125 *NZT7053 1,000 8.0 200 50 125 *Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2. ã 1997 Fairchild Semiconductor Corporation Units mW mW/°C °C/W °C/W 2N7052 / 2N7053 / NZT7053 Discrete POWER & Signal Technologies (continued) Electrical Characteristics Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Max Units OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage* IC = 1.0 mA, IB = 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC = 100 µA, IE = 0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 1.0 mA, IC = 0 12 ICBO Collector-Cutoff Current VCB = 80 V, IE = 0 0.1 µA ICES Collector-Cutoff Current VCE = 80 V, IE = 0 0.2 µA IEBO Emitter-Cutoff Current VEB = 7.0 V, IC = 0 0.1 µA 20,000 1.5 V 2.0 V V ON CHARACTERISTICS* hFE DC Current Gain VCE(sat) Collector-Emitter Saturation Voltage IC = 100 mA, VCE = 5.0 V IC = 1.0 A, VCE = 5.0 V IC = 100 mA, IB = 0.1 mA VBE(on) Base-Emitter On Voltage IC = 100 mA, VBE = 5.0 V 10,000 1,000 SMALL SIGNAL CHARACTERISTICS FT Transition Frequency IC = 100 mA, VCE = 5.0 V, Ccb Collector-Base Capacitance VCB = 10 V,f = 1.0 MHz 2N7052 2N7053 200 MHz 10 8.0 pF *Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 1.0% Typical Pulsed Current Gain vs Collector Current 100 80 60 40 20 0 0.001 125 °C 25 °C - 40°C 0.01 0.1 I C - COLLECTOR CURRENT (A) 1 VCESAT- COLLECTOR EMITTER VOLTAGE (V) h FE - TYPICAL PULSED CURRENT GAIN (K) Typical Characteristics Collector-Emitter Saturation Voltage vs Collector Current 2 β = 1000 1.6 1.2 - 40°C 0.8 25 °C 125 °C 0.4 0 10 100 I C - COLLECTOR CURRENT (mA) P 06 1000 2N7052 / 2N7053 / NZT7053 NPN Darlington Transistor (continued) (continued) Base-Emitter Saturation Voltage vs Collector Current 2 β = 1000 1.6 - 40°C 25 °C 1.2 125 °C 0.8 0.4 0 10 100 I C - COLLECTOR CURRENT (mA) 1000 VBEON - BASE EMITTER ON VOLTAGE (V) VBESAT- BASE EMITTER VOLTAGE (V) Typical Characteristics Base Emitter ON Voltage vs Collector Current 2 - 40°C 1.6 25 °C 1.2 125 °C 0.8 VCE= 5V 0.4 0 10 100 I C - COLLECTOR CURRENT (mA) 1000 P 06 Junction Capacitance vs Reverse Bias Voltage 100 JUNCTION CAPACITANCE (pF) ICBO- COLLECTOR CURRENT (nA) Collector-Cutoff Current vs. Ambient Temperature VCB = 80V 10 1 0.1 0.01 25 50 75 100 TA - AMBIENT TEMPERATURE ( º C) 125 100 10 C ib C cb 1 0.1 1 10 REVERSE BIAS VOLTAGE (V) P 06 Power Dissipation vs Ambient Temperature 1 1000 VCE = 80V V BE = 0 100 10 1 0 40 80 120 160 TJ - JUNCTION TEMPERATURE ( º C) PD - POWER DISSIPATION (W) I CES - LEAKAGE CURRENT (nA) Typical Collector-Emitter Leakage Current vs Temperature 0.1 100 SOT-223 0.75 TO-92 TO-226 0 .5 0.25 0 0 25 50 75 100 TEMPERATURE ( o C) 125 150 2N7052 / 2N7053 / NZT7053 NPN Darlington Transistor TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample See Fig 2.0 for various Reeling Styles FAIRCHILD SEMICONDUCTOR CORPORATION LOT: CBVK741B019 PN2222N NSID: D/C1: HTB:B QTY: 10000 SPEC: D9842 SPEC REV: FSCINT Label B2 QA REV: 5 Reels per Intermediate Box (FSCINT) Customized Label F63TNR Label sample LOT: CBVK741B019 FSID: PN222N D/C1: D9842 D/C2: F63TNR Label QTY: 2000 SPEC: QTY1: QTY2: SPEC REV: CPN: N/F: F Customized Label (F63TNR)3 375mm x 267mm x 375mm Intermediate Box TO-92 TNR/AMMO PACKING INFROMATION Packing Style Quantity EOL code Reel A 2,000 D26Z E 2,000 D27Z Ammo M 2,000 D74Z P 2,000 D75Z AMMO PACK OPTION See Fig 3.0 for 2 Ammo Pack Options FSCINT Label Unit weight = 0.22 gm Reel weight with components = 1.04 kg Ammo weight with components = 1.02 kg Max quantity per intermediate box = 10,000 units 327mm x 158mm x 135mm Immediate Box Customized Label (TO-92) BULK PACKING INFORMATION EOL CODE DESCRIPTION QUANTITY TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX NO LEADCLIP 2.0 K / BOX NO LEADCLIP 2.0 K / BOX TO-92 STANDARD STRAIGHT FOR: PKG 92, 94 (NON PROELECTRON SERIES), 96 L34Z TO-92 STANDARD STRAIGHT FOR: PKG 94 (PROELECTRON SERIES BCXXX, BFXXX, BSRXXX), 97, 98 Customized Label F63TNR Label 333mm x 231mm x 183mm Intermediate Box BULK OPTION LEADCLIP DIMENSION J18Z NO EOL CODE 5 Ammo boxes per Intermediate Box See Bulk Packing Information table Anti-static Bubble Sheets FSCINT Label 2000 units per EO70 box for std option 114mm x 102mm x 51mm Immediate Box 5 EO70 boxes per intermediate Box 530mm x 130mm x 83mm Intermediate box Customized Label FSCINT Label 10,000 units maximum per intermediate box for std option ©2001 Fairchild Semiconductor Corporation March 2001, Rev. B1 TO-92 Tape and Reel Data, continued TO-92 Reeling Style Configuration: Figure 2.0 Machine Option “A” (H) Machine Option “E” (J) Style “A”, D26Z, D70Z (s/h) Style “E”, D27Z, D71Z (s/h) TO-92 Radial Ammo Packaging Configuration: Figure 3.0 FIRST WIRE OFF IS COLLECTOR ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON TOP ORDER STYLE D74Z (M) FIRST WIRE OFF IS EMITTER (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON BOTTOM FIRST WIRE OFF IS EMITTER ADHESIVE TAPE IS ON THE TOP SIDE FLAT OF TRANSISTOR IS ON BOTTOM ORDER STYLE D75Z (P) FIRST WIRE OFF IS COLLECTOR (ON PKG. 92) ADHESIVE TAPE IS ON BOTTOM SIDE FLAT OF TRANSISTOR IS ON TOP September 1999, Rev. B TO-92 Tape and Reel Data, continued TO-92 Tape and Reel Taping Dimension Configuration: Figure 4.0 Hd P Pd b Ha W1 d L H1 HO L1 S WO t W2 W t1 P1 F1 DO P2 PO User Direction of Feed TO-92 Reel Configuration: Figure 5.0 ITEM DESCRIPTION SYMBOL DIMENSION Base of Package to Lead Bend b 0.098 (max) Component Height Ha 0.928 (+/- 0.025) Lead Clinch Height HO 0.630 (+/- 0.020) Component Base Height H1 0.748 (+/- 0.020) Component Alignment ( side/side ) Pd 0.040 (max) Component Alignment ( front/back ) Hd 0.031 (max) Component Pitch P 0.500 (+/- 0.020) Feed Hole Pitch PO 0.500 (+/- 0.008) Hole Center to First Lead P1 0.150 (+0.009, -0.010) Hole Center to Component Center P2 0.247 (+/- 0.007) Lead Spread F1/F2 0.104 (+/- 0 .010) Lead Thickness d 0.018 (+0.002, -0.003) Cut Lead Length L 0.429 (max) Taped Lead Length L1 0.209 (+0.051, -0.052) Taped Lead Thickness t 0.032 (+/- 0.006) Carrier Tape Thickness t1 0.021 (+/- 0.006) Carrier Tape Width W 0.708 (+0.020, -0.019) Hold - down Tape Width WO 0.236 (+/- 0.012) Hold - down Tape position W1 0.035 (max) Feed Hole Position W2 0.360 (+/- 0.025) Sprocket Hole Diameter DO 0.157 (+0.008, -0.007) Lead Spring Out S 0.004 (max) Note : All dimensions are in inches. ELECT ROSTATIC SEN SITIVE D EVICES D4 D1 D2 F63TNR Label ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM Reel Diameter D1 13.975 14.025 Arbor Hole Diameter (Standard) D2 1.160 1.200 D2 0.650 0.700 Customized Label (Small Hole) W1 Core Diameter D3 3.100 3.300 Hub Recess Inner Diameter D4 2.700 3.100 Hub Recess Depth W1 0.370 0.570 Flange to Flange Inner Width W2 1.630 Hub to Hub Center Width W3 1.690 2.090 W3 W2 Note: All dimensions are inches D3 July 1999, Rev. A TO-92 Package Dimensions TO-92 (FS PKG Code 92, 94, 96) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: inches [millimeters] Part Weight per unit (gram): 0.1977 ©2000 Fairchild Semiconductor International January 2000, Rev. B TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx™ Bottomless™ CoolFET™ CROSSVOLT™ DOME™ E2CMOSTM EnSignaTM FACT™ FACT Quiet Series™ FAST  FASTr™ GlobalOptoisolator™ GTO™ HiSeC™ ISOPLANAR™ MICROWIRE™ OPTOLOGIC™ OPTOPLANAR™ PACMAN™ POP™ PowerTrench  QFET™ QS™ QT Optoelectronics™ Quiet Series™ SILENT SWITCHER  SMART START™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SyncFET™ TinyLogic™ UHC™ VCX™ DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. 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Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. G ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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